PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC369 ISSUE 1 SEPT 93 FEATURES * 20 Volt VCEO * 1 Amp continuous current * Ptot= 800 mW E C B TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -1 A Power Dissipation at Tamb=25C Ptot 800 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -25 V IC=-100A, IE=0 V(BR)CEO -20 V IC=-10mA, IB=0* V(BR)EBO -5 V IE=-100A, IC=0 Collector Cut-Off Current ICBO -10 A VCB=-25V Emitter Cut-Off Current IEBO -10 A VEB=-5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-1A, IB=-100mA* Base-Emitter Turn-on Voltage VBE(on) -1.0 V IC=-1A,VCE=-1V* Static Forward Current Transfer Ratio hFE 50 85 60 Transition Frequency fT 65 IC=-5mA, VCE=-10V* IC=-500mA, VCE=-1V* IC=-1A, VCE=-1V* 375 MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-15 IC=-10mA, VCE=-5V f=100MHz