PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
* 20 Volt VCEO
* 1 Amp continuous current
*P
tot= 800 mW
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -25 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC-1 A
Power Dissipation at Tamb
=25°C Ptot 800 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -25 V IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -20 V IC=-10mA, IB
=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IE=-100µA, IC=0
Collector Cut-Off Current ICBO -10 µAVCB
=-25V
Emitter Cut-Off Current IEBO -10 µAVEB
=-5V, IC
=0
Collector-Emitter
Saturation Voltage
VCE(sat) -0.5 V IC=-1A, IB=-100mA*
Base-Emitter
Turn-on Voltage
VBE(on) -1.0 V IC=-1A,VCE=-1V*
Static Forward Current
Transfer Ratio
hFE 50
85
60
375
IC=-5mA, VCE
=-10V*
IC=-500mA, VCE
=-1V*
IC=-1A, VCE
=-1V*
Transition
Frequency
fT65 MHz IC=-10mA, VCE
=-5V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
BC369
3-15
E
C
B
TO92
