Rev. A, September 2000
FQA140N10
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
©2000 Fairchild Semiconductor International
(Note 6)
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.115mH, IAS = 140A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 140A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA100 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.08 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 µA
VDS = 64 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 70 A -- 0.008 0.01 Ω
gFS Forward Transconduct ance VDS = 30 V, ID = 70 A -- 80 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 6100 7900 pF
Coss Output Capacitance -- 2000 2600 pF
Crss Reverse Transfer Capacitance -- 420 550 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 40 V, ID = 140 A,
RG = 25 Ω
-- 75 160 ns
trTurn-On Rise Time -- 940 1890 ns
td(off) Turn-Off D e l a y Time -- 35 0 710 ns
tfTurn-Off F a ll Time -- 3 6 0 730 ns
QgTotal Gate Ch arge VDS = 64 V, ID = 140 A,
VGS = 10 V
-- 220 285 nC
Qgs Gate-Source Charge -- 39 -- nC
Qgd Gate-Drain Charge -- 114 -- nC
Drain-Sourc e Diode Characteristics and Maximum R atings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 140 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 560 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 140 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 140 A,
dIF / dt = 100 A/µs
-- 140 -- ns
Qrr Reverse Recovery Charge -- 730 -- nC