©2000 Fairchild Semiconductor International
September 2000
Rev. A, September 2000
FQA140N10
QFET
QFETQFET
QFETTM
FQA140N10
100V N-Ch annel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
140A, 100V, RDS(on) = 0.01 @VGS = 10 V
Low gate charge ( typical 220 nC)
Low Crss ( typical 470 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
Absolute Maximu m Ratings TC = 25°C unless otherwise noted
Thermal Characteri stics
Symbol Parameter FQA140N10 Units
VDSS Drain-Source Voltage 100 V
IDDrain Current - Continuous (TC = 25°C) 140 A
- Continuous (TC = 100°C) 99 A
IDM Drain Current - Pulsed (Note 1) 560 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 1500 mJ
IAR Avalanche Current (Note 1) 140 A
EAR Repetitive Avalanche Energy (Note 1) 37.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns
PDPower Dissipation (TC = 25°C) 375 W
- Derate above 25°C 2.5 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 0.4 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W
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TO-3P
FQA Series
GSD
Rev. A, September 2000
FQA140N10
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
©2000 Fairchild Semiconductor International
(Note 6)
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.115mH, IAS = 140A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 140A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA100 -- -- V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.08 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 µA
VDS = 64 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 70 A -- 0.008 0.01
gFS Forward Transconduct ance VDS = 30 V, ID = 70 A -- 80 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 6100 7900 pF
Coss Output Capacitance -- 2000 2600 pF
Crss Reverse Transfer Capacitance -- 420 550 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 40 V, ID = 140 A,
RG = 25
-- 75 160 ns
trTurn-On Rise Time -- 940 1890 ns
td(off) Turn-Off D e l a y Time -- 35 0 710 ns
tfTurn-Off F a ll Time -- 3 6 0 730 ns
QgTotal Gate Ch arge VDS = 64 V, ID = 140 A,
VGS = 10 V
-- 220 285 nC
Qgs Gate-Source Charge -- 39 -- nC
Qgd Gate-Drain Charge -- 114 -- nC
Drain-Sourc e Diode Characteristics and Maximum R atings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 140 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 560 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 140 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 140 A,
dIF / dt = 100 A/µs
-- 140 -- ns
Qrr Reverse Recovery Charge -- 730 -- nC
FQA140N10
Rev. A, September 2000©2000 Fairchild Semiconductor International
246810
10-1
100
101
102
No tes :
1 . VDS = 40V
2. 250μ
s Pu lse T est
-55
175
25
ID , Drain Current [A ]
VGS , Gate-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10-1
100
101
102
25
175 Notes :
1. VGS = 0V
2. 250μ
s Pu lse Tes t
IDR , Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
0 100 200 300 400 500 600 700 800 900
0
5
10
15
20
25
30
N o te : TJ = 25
VGS = 20V
VGS = 10V
RDS(ON) [mΩ],
Drain-S ource O n-Resistance
ID , Dra i n Curre n t [A]
10-1 100101
101
102
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bo ttom : 4 .5 V
Notes :
1. 250μ
s Pulse Test
2. TC = 25
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
10-1 100101
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MH z
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 40 80 120 160 200 240
0
2
4
6
8
10
12
VDS = 50V
VDS = 80V
Note : ID = 140 A
VGS, Gate -S o u rce V o ltag e [V ]
QG, T ota l Ga te Ch a r g e [nC]
Typical Characteristics
Figure 5. C apacitanc e Ch a racteristi cs Figure 6. Ga te Ch arge Chara ct e ristics
Figu re 3. On-Resi stan ce Variation vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ics
©2000 Fairchild Semiconductor International
FQA140N10
Rev. A, September 2000
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
1 . VGS = 0 V
2 . ID = 250 μ
A
BV DSS , (No rma liz e d )
Drain-Source Breakdow n Voltage
TJ, Junction Tem perature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. VGS = 10 V
2. ID = 70 A
RDS(ON) , (N o r malized )
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1 Note s :
1 . Z θJC(t) = 0.4 /W Ma x .
2 . D u ty F a c to r, D = t1/t2
3 . T JM - TC = P DM * Z θJC(t)
single p ulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Therm al R esponse
t1, S quare W ave Pulse D uration [sec]
25 50 75 100 125 150 175
0
30
60
90
120
150
Limited by Package
ID, Drain Current [A]
TC, Case Temperature [
]
100101102
10-1
100
101
102
103
10 µs
DC 10 m s 1 ms 100 µs
Op era tion in Th is A r e a
is Limited by R DS(on)
Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
ID, D rain C urrent [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Breakdown Voltage Variat i on
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Res pons e Cur ve
t1
PDM
t2
FQA140N10
Rev. A, September 2000©2000 Fairchild Semiconductor International
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor International
FQA140N10
Rev. A, September 2000
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD con troll e d by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS dv/dt controlled by RG
•I
SD con troll e d by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
FQA140N10
Rev. A, September 2000©2000 Fairchild Semiconductor International
Package Dimensions
15.60 ±0.20 4.80 ±0.20
13.60 ±0.20
9.60 ±0.20
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20 1.40 ±0.20
ø3.20 ±0.10
3.80 ±0.20
13.90 ±0.20
3.50 ±0.20
16.50 ±0.30
12.76 ±0.20
19.90 ±0.20
23.40 ±0.20
18.70 ±0.20
1.50 +0.15
–0.05
0.60 +0.15
–0.05
5.45TYP
[5.45 ±0.30]5.45TYP
[5.45 ±0.30]
TO-3P
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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INTERNATIONAL.
As used herein:
1. Life support devices or systems are devic es or syst em s
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
VCX™