VS-150U120D - Vishay Semiconductors

VS-150U(R).. Series

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Revision: 11-Jan-18 1Document Number: 93490

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Standard Recovery Diodes,

(Stud Version), 150 A

FEATURES

• Diffused diode

• High voltage ratings up to 1200 V

• High surge current capabilities

• Stud cathode and stud anode version

• Hermetic metal case

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Welders

• Power supplies

• Machine tool controls

• High power drives

• Medium traction applications

• Battery charges

• Freewheeling diodes

ELECTRICAL SPECIFICATIONS

PRIMARY CHARACTERISTICS

IF(AV) 150 A

Package DO-8 (DO-205AA)

Circuit configuration Single

DO-8 (DO-205AA)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IF(AV)

150 A

TC125 °C

IF(RMS) 235

IFSM

50 Hz 3000

60 Hz 3140

I2t50 Hz 45 kA2s

60 Hz 41

VRRM Range 600 to 1200 V

TJ-40 to +180 °C

VOLTAGE RATINGS

TYPE NUMBER VOLTAGE

CODE

VRRM, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

VRSM, MAXIMUM NON-REPETITIVE

PEAK REVERSE VOLTAGE

IRRM MAXIMUM

AT TJ = TJ MAXIMUM

VS-150U(R)..

60 600 700

80 800 900

100 1000 1100

120 1200 1300

VS-150U(R).. Series

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Revision: 11-Jan-18 2Document Number: 93490

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Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current 

at case temperature IF(AV) 180° conduction, half sine wave 150 A

125 °C

Maximum RMS forward current IF(RMS) DC at 110 °C 235

Maximum peak, one cycle forward, non-repetitive

surge current IFSM

t = 10 ms

No voltage 

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

3000

t = 8.3 ms 3140

Maximum I2t for fusing I2tt = 10 ms 45 kA2s

t = 8.3 ms 41

Slope resistance rfTJ = TJ maximum 0.97 m

Threshold voltage VF(T0) 0.80 V

Maximum forward voltage drop VFM Ipk = 600 A, TJ = 25 °C, tp = 10 ms sinusoidal wave 1.47

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating and storage

temperature range TJ, TStg -40 to +180 °C

Maximum thermal resistance, junction to case RthJC DC operation 0.3 K/W

Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1

Maximum allowable mounting torque + 0 - 20 %

Not lubricated threads tighting on hexagon 17

N · m

Lubricated threads tighting on hexagon 14.5

Not lubricated threads tighting on nut 14

Lubricated threads tighting on nut 12

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet DO-8 (DO-205AA)

RthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.031 0.023

TJ = TJ maximum K/W

120° 0.038 0.040

90° 0.048 0.053

60° 0.071 0.075

30° 0.120 0.121

100

120

140

160

180

0 50 100 150 200

30° 60 °

90 °

120 °

180 °

Conduction Angle

150U(R).. Series

RthJC (DC) = 0.3 K/W

Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

Average Forward Current (A)

Maximum Allowable Case Temperature (°C)

100

120

140

160

180

0 40 80 120 160 200

30 ° 60 °

90 °

180 °

120 °

150U(R).. Series

RthJC (DC) = 0.3 K/W

Conduction Period

VS-150U(R).. Series

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Revision: 11-Jan-18 3Document Number: 93490

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Fig. 3 - Forward Power Loss Characteristics

Fig. 4 - Forward Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Maximum Average Forward Power Loss (W)

100 120 140 160 180

RthSA =0.05 K/W - Delta R

0.2 K/W

0.4 K/W

0.6 K/W

1.2 K/W

100

150

200

250

300

0 50 100 150 200

RMS Limit

Conduction Angle

180 °

120 °

90 °

60 °

30 °

150U(R)

Tj = 180 °C

.. Series

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Maximum Average Forward Power Loss (W)

100 120 140 160 180

RthSA =0.05 K/W - Delta R

0.2 K/W

0.4 K/W

0.6 K/W

0.8 K/W

1.2 K/W

100

150

200

250

300

0 50 100 150 200 250 300

RMS Limit

Conduction Period

180 °

120 °

90 °

60 °

30 °

150U(R)

Tj = 180 °C

.. Series

500

1000

1500

2000

2500

3000

3500

Per Junction

At Any Rated Load Condition And With

Rated Vrrm Applied Following Surge.

Initial Tj = 180 °C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

Number Of Equal Amplitude

Half Cycle Current Pulses (N)

Peak Half Sine Wave Forward Current (A)

1 10 100

Peak Half Sine Wave Forward Current (A)

Pulse Train Duration (s)

500

1000

1500

2000

2500

3000

3500

4000

0.01 0.1 1

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Per Junction

Of Conduction May Not Be Maintained.

Initial T j = 180 °C

No Voltage Reapplied

Rated Vrrm Reapplied

VS-150U(R).. Series

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Revision: 11-Jan-18 4Document Number: 93490

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Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Thermal Impedance ZthJC Characteristic

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

100

1000

10 000

0.5 1 1.5 2 2.5 3

Tj = 25 °C

Tj = 180 °C

0.01

0.1

0.001 0.01 0.1 1 10

150U(R).. Series

Steady State Value

RthJC = 0.3 K/W

(DC Operation)

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance (K/W)

VS-150U(R).. Series

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Revision: 11-Jan-18 5Document Number: 93490

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ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95315

Device code

- 15 = essential part number

- 0 = standard device

- U = stud normal polarity (cathode to stud)

- None = stud normal polarity (cathode to stud)

R = stud reverse polarity (anode to stud)

- Voltage code x 10 = V

RRM

(see Voltage Ratings table)

- Diffused diode

- L = stud base 1/2"-24UNF-2A threads

None = stud base 3/8"-24UNF-2A threads

15 0 U R 120 D L

51 32 4 6 7 8

1- Vishay Semiconductors product

VS-

Note

• For metric device M12 x 1.75 contact factory

Document Number: 95315 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 02-Jul-08 1

DO-205AA (DO-8) for 150U(R) Series

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

Note

(1) For stud base 1/2"-20UNF-2A threads; refer to “Ordering Information Table”

16.5 (0.65)

MAX.

6.5 (0.26) MIN.

Ø 8.5 (0.33) NOM.

Glass-metal seal

3/8"-24UNF-2A

(For metric device M12 x 1.75) (1)

C.S. 16 mm2

(0.015 s.i.)

Ø 23.5 (0.93) MAX.

2.6 (0.10) MAX.

35 (1.38)

MAX.

17 (0.69)

MAX.

24 (0.94)

MAX.

55 (2.16) MIN.

165 (6.49) MIN

170 (6.69) MAX.

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

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