2006-12-05
Rev. 1.2 Page 1
BSS 83 P
SIPMOS Small-Signal-Transistor
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
Logic Level
·
d
v
/d
t
rated
Product Summary
Drain source voltage V
V
DS -60
Drain-source on-state resistance
R
DS(on) 2
W
Continuous drain current A
I
D-0.33
1
2
3
VPS05161
Type
Package
Tape and Reel
BSS 83 P
PG-SOT-23
L6327: 3000pcs/r.
Marking
YAs
Pin 1
PIN 2
PIN 3
G
S
D
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Unit
Value
-0.33
-0.27
A
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D
Pulsed drain current
T
A
= 25 °C
I
D puls
-1.32
Avalanche energy, single pulse
I
D
= -0.33 A ,
V
DD
= -25 V,
R
GS
= 25
W
9.5 mJ
E
AS
Avalanche energy, periodic limited by
T
jmax
E
AR
0.036
d
v
/d
t
6Reverse diode d
v
/d
t
I
S
= -0.33 A,
V
DS
= -48 V, d
i
/d
t
= 200 A/µs,
T
jmax
= 150 °C
kV/µs
Gate source voltage
V
GS
±
20 V
Power dissipation
T
A
= 25 °C
P
tot
0.36 W
Operating and storage temperature
T
j ,
T
stg
-55...+150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
2006-12-05
Rev. 1.2 Page 2
BSS 83 P
Thermal Characteristics
Parameter Symbol UnitValues
min. max.typ.
Characteristics
Thermal resistance, junction - soldering point
( Pin 3 ) 150 K/W-
R
thJS -
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
-
-
350
300
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = -250 µA
V
(BR)DSS -60 - V-
Gate threshold voltage,
V
GS =
V
DS
I
D = -80 µA -1 -1.5 -2
V
GS(th)
Zero gate voltage drain current
V
DS = -60 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = -60 V,
V
GS = 0 V,
T
j = 125 °C
µA
-1
-100
I
DSS
-0.1
-10
-
-
I
GSS - -10 -100Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V nA
Drain-source on-state resistance
V
GS = -4.5 V,
I
D = -0.27 A
R
DS(on) - 2 3
W
Drain-source on-state resistance
V
GS = -10 V,
I
D = -0.33 A
R
DS(on) - 1.4 2
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2006-12-05
Rev. 1.2 Page 3
BSS 83 P
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
³
2*
I
D*
R
DS(on)max ,
I
D = -0.27 A 0.24
g
fs S-0.47
Input capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
iss 62 78 pF-
C
oss - 2419Output capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz 97
C
rss -
Turn-on delay time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.27 A,
R
G = 43
W
- 35 ns23
t
d(on)
Rise time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.27 A,
R
G = 43
W
t
r- 10671
56 70
t
d(off)
Turn-off delay time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.27 A,
R
G = 43
W
-
Fall time
V
DD = -30 V,
V
GS = -4.5 V,
I
D = -0.27 A,
R
G = 43
W
t
f- 61 76
2006-12-05
Rev. 1.2 Page 4
BSS 83 P
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified Unit
ValuesSymbolParameter
min. typ. max.
Dynamic Characteristics
Gate to source charge
V
DD = -48 V,
I
D = -0.33 A -
Q
gs nC0.180.12
Gate to drain charge
V
DD = -48 ,
I
D = -0.33 A
Q
gd 1.1 1.65-
3.57-
Q
g
Gate charge total
V
DD = -48 V,
I
D = -0.33 A,
V
GS = 0 to -10 V 2.38
Gate plateau voltage
V
DD = -48 V ,
I
D = -0.33 A
V
(plateau) - -2.94 - V
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - -0.33 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - -1.32
Inverse diode forward voltage
V
GS = 0 V,
I
F = -0.33
V
SD - -0.84 -1.1 V
Reverse recovery time
V
R = -30 V,
I
F=
I
S , d
i
F/d
t
= 80 A/µs
t
rr - 59.4 89 ns
Reverse recovery charge
V
R = -30 V,
I
F=
l
S , d
i
F/d
t
= 80 A/µs
Q
rr - 37.5 56 nC
2006-12-05
Rev. 1.2 Page 5
BSS 83 P
Drain current
I
D =
f
(
T
A)
parameter:
V
GS
³
10 V
0 20 40 60 80 100 120 °C 160
T
A
0.00
-0.04
-0.08
-0.12
-0.16
-0.20
-0.24
-0.28
A
-0.36
BSS
83
P
I
D
Power Dissipation
P
tot =
f
(
T
A)
0 20 40 60 80 100 120 °C 160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
W
0.38
BSS
83
P
P
tot
Transient thermal impedance
Z
thJC =
f
(
t
p)
parameter :
D
=
t
p/
T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
BSS
83
P
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
A = 25 °C
-10 -1 -10 0 -10 1 -10 2
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS
83
P
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 88.0µs
2006-12-05
Rev. 1.2 Page 6
BSS 83 P
Typ. drain-source-on-resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A-0.65
I
D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
W
6.5
BSS
83
P
R
DS(on)
a
V
GS [V] =
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
k
k
-8.0
l
l
-10.0
Typ. output characteristic
I
D =
f
(
V
DS);
T
j=25°C
parameter:
t
p = 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0
V
DS
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
-0.60
A
-0.80
BSS
83
P
I
D
V
GS [V]
a
a -2.5
b
b -3.0
c
c -3.5
d
d -4.0
e
e -4.5
f
f -5.0
g
g -5.5
h
h -6.0
i
i -6.5
j
j -7.0
k
k -8.0
l
P
tot = 0W
l -10.0
Typ. transfer characteristics
I
D=
f
(
V
GS )
V
DS
³
2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0.0 -1.0 -2.0 -3.0 -4.0 V-6.0
V
GS
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
A
-1.2
I
D
Typ. forward transconductance
g
fs = f(
I
D);
T
j=25°C
parameter:
g
fs
0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A-0.70
ID
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
S
0.70
gfs
2006-12-05
Rev. 1.2 Page 7
BSS 83 P
Drain-source on-state resistance
R
DS(on) =
f
(
T
j)
parameter :
I
D = -0.33 A,
V
GS = -10 V
-60 -20 20 60 100 °C 180
T
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
W
5.5
BSS
83
P
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = -80 µA
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
2%
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
typ
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
98%
-60 -20 20 60 100 °C 160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
=1 MHz
0 -5 -10 -15 -20 -25 V-35
V
DS
0
10
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSS
83
P
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
2006-12-05
Rev. 1.2 Page 8
BSS 83 P
Avalanche energy
E
AS =
f
(
T
j)
para.:
I
D = -0.33 A ,
V
DD = -25 V,
R
GS = 25
25 45 65 85 105 125 °C 165
T
j
0
1
2
3
4
5
6
7
8
mJ
10
E
AS
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = -0.33 A pulsed
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 nC 3.4
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
BSS
83
P
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS =
f
(
T
j)
-60 -20 20 60 100 °C 180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSS
83
P
V
(BR)DSS
2006-12-05
Rev. 1.2 Page 9
BSS 83 P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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