SAMSUNG SEMICONDUCTOR INC 34E 0 ff 2964342 go0L933 4 | TF 3m FM RADIO RF AMP, MIX, CONV, OSC, IF AMP . * High Current Gain Bandwidth Product fr =250MHz (Typ) To-sas ABSOLUTE MAXIMUM RATINGS (Ta=25C) Characteristic Symboi Rating Unit Coliector-Base Voltage Vcso 35 Vv Coltector-Emitter Voltage Voeo 30 Vv Emitter-Base Voltage Veso 4 V Collector Current tc 30 mA . Collector Dissipation Pe 200 mw Junction Temperature Tj 150 C Storage Temperature Tstg -55~ 150 C 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristic Symbo! Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage BVceo lc=100,A, I; =0 35 Vv Collector-Emitter Breakdown Voltage | BYVceo Ic=5mA, fa =0 30 Vv Emitter-Base Breakdown Voltage BVepo le= 10pA, Io =0 4 Vv Collector Cut-off Current Ico Veo =30V, le =O 0.1 BA Emitter Cut-off Current leso Vea =4V, Ic =O 01 pA DC Current Gain Nee Vee = 12V, le= 2MA 40 240 Base-Emitter On Voltage Vee (on) Vee =6V, lo = IMA 0.65 0.70 0.75 Vv Collector-Emitter Saturation Voltage Vce (sat) Ig=10mA, Is=1mA 0.1 0.4 Vv Current Gain-Bandwidth Product fr Vee =10V, lo=imA 100 250 MHz Output Capacitance Cob Vea =10V, Ie =0 2.0 3.2 pF f=1MHz t hre CLASSIFICATION Classification | R Oo Y re 40-80 70-140 120-240 cee SAMSUNG SEMICONDUCTOR 203 SAMSUNG SEMICONDUCTCR INC 14E D BP eacuaue 0006934 & i KSC2669 NPN EPITAXIAL SILICON TRANSISTOR T-31-15 STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE ke (mA), COLLECTOR CURRENT 8 8 8 0 a2 a4 08 os 10 12 Vce (), COLLECTOR-EMITTER VOLTAGE Vea (V), BASE-EMITTER VOLTAGE OC CURRENT GAIN CURRENT GAIN-BANOWIDTH PRODUCT 4000 1000 500 i 500 300 300 z 3. 5 3 te0 3 3 x f c 3 < s vn ai oa 05 1 35 w* 8 100 05 1 3 10 30 ic (mA), COLLECTOR CURRENT tc (mA}, COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE COLLECTOR-EMITTER SATURATION VOLTAGE 3 g | : i q & Hos 3 Fors : Noss ar 03 05 1 3.8 bi] x 1 3 5 10 30 60 WO ke (mA), COLLECTOR CURRENT Vea (V), COLLECTOR-GASE VOLTAGE che SAMSUNG SEMICONDUCTOR 204