MMBT4403 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 5
www.unisonic.com.tw QW-R206-034.F
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current-Continuous IC -600 mA
350 mW Total Device Dissipation
Derate above 25°C PC 2.8 mW/°C
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (Ta=25°C, unless otherwise specified)
CHARACTERISTIC SYMBOL RATINGS UNIT
Junction to Ambient θJA 357 °C /W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage (Note) BVCEO I
C=-1mA, IB=0 -40 V
Collector-Base Breakdown Voltage BVCBO I
C=-0.1mA, IE=0 -40 V
Emitter-Base Breakdown Voltage BVEBO I
E=-0.1mA, IC=0 -5 V
Collector Cut-off Current ICEX V
CE=-35V, VEB=-0.4V -0.1 µA
Base Cut-off Current IBEX V
CE=-35V, VBE=-0.4V -0.1 µA
ON CHARACTERISTICS*
hFE1 V
CE=-1V,IC=-0.1mA 30
hFE2 V
CE=-1V,IC=-1mA 60
hFE3 V
CE=-1V,IC=-10mA 100
hFE4 V
CE=-2V, IC=-150mA (Note) 100 300
DC Current Gain
hFE5 V
CE=-2V, IC=-500mA (Note) 20
VCE(SAT1) IC=-150mA, IB=-15mA -0.4
Collector-Emitter Saturation
Voltage VCE(SAT2)I
C=-500mA, IB=-50mA -0.75
V
VBE(SAT1) IC=-150mA, IB=-15mA(Note) -0.75 -0.95
Base-Emitter Saturation Voltage VBE(SAT2)I
C=-500mA, IB=-50mA -1.3
V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency fT V
CE=-10V, IC=-20mA, f=100MHz 200 MHz
Collector-Base Capacitance CCB V
CB=-10V, IE=0, f=140kHz 8.5 pF
Emitter-Base Capacitance CEB V
BE=-0.5V, IC=0, f=140kHz 30 pF
Input Impedance hIE V
CE=-10V, IC=-1mA, f=1kHz 1.5 15 kΩ
Voltage Feedback Ratio hRE V
CE=-10V, IC=-1mA, f=1kHz 0.1 8 ×10-4
Small-Signal Current Gain hFE V
CE=-10V, IC=-1mA, f=1kHz 60 500
Output Admittance hOE V
CE=-10V, IC=-1mA, f=1kHz 1.0 100 µmbos
SWITCHING CHARACTERISTICS
Delay Time tD 15
Rise Time tR VCC=-30V, IC=-150mA IB1=-15mA 20
ns
Storage Time tS 225
Fall Time tF
VCC=-30V, IC=-150mA
IB1= IB2=-15mA 30
ns
Note: Pulse test: Pulse Width≤300μs, Duty Cycle≤2%