JS28F256P33BFA - MICRON TECHNOLOGY

Datasheet Mar 2010

1Order Number: 320003-09

Numonyx® AxcellTM Flash Memory (P33-

65nm)

256-Mbit, 512-Mbit (256M/256M)

Datasheet

Product Features

High performance:

— 95ns initial access time for Easy BGA

— 105ns initial access time for TSOP

— 25ns 16-word asynchronous-page read

mode

— 52MHz (Easy BGA) with zero wait states,

17ns clock-to-data output synchronous-

burst read mode

— 4-, 8-, 16-, and continuous-word options

for burst mode

— Buffered Enhanced Factory Programming at

2.0MByte/s (typ) using 512-word buffer

— 3.0V buffered programming at 1.14 MByte/

s (Typ) using 512-word buffer

Architecture:

— Multi-Level Cell Technology: Highest

Density at Lowest Cost

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

—128-KByte main blocks

— Blank Check to verify an erase block

Voltage and Power:

—V

CC (core) voltage: 2.3 V – 3.6 V

—V

CCQ (I/O) voltage: 2.3 V – 3.6 V

— Standby current: 65uA (Typ) for 256-Mbit

— Continuous synchronous read current: 21

mA (Typ)/24 mA (Max) at 52 MHz

Security:

— One-Time Programmable Registers:

— 64 unique factory device identifier bits

— 2112 user-programmable OTP bits

— Absolute write protection: VPP = VSS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

— Password Access feature

Software:

— 25µs (Typ) program suspend

— 25µs (Typ) erase suspend

— Numonyx™ Flash Data Integrator optimized

— Basic Command Set and Extended Function

Interface Command Set compatible

— Common Flash Interface capable

Density and Packaging

— 56-Lead TSOP package (256-Mbit only)

— 64-Ball Easy BGA package (256, 512-Mbit)

— 16-bit wide data bus

Quality and Reliability

— JESD47E Compliant

— Operating temperature: –40 °C to +85 °C

— Minimum 100,000 erase cycles per block

— 65nm ETOX™ X process technology

Datasheet Mar 2010

2Order Number: 320003-09

Legal Lines and Discla imers

INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR

OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND

CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED

WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A

PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx

products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications.

Numonyx may make changes to specifications and product descriptions at any time, without notice.

Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the

presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel

or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.

Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for

future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.

Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.

Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting

Numonyx's website at http://www.numonyx.com.

Numonyx, the Numonyx logo, and Axcell are trademarks or registered trademarks of Numonyx, B.V. or its subsidiaries in other countries.

*Other names and brands may be claimed as the property of others.

Datasheet Mar 2010

3Order Number: 320003-09

P33-65nm

Contents

1.0 Functional Description...............................................................................................5

1.1 Introduction .......................................................................................................5

1.2 Overview ...........................................................................................................5

1.3 Virtual Chip Enable Description..............................................................................6

1.4 Memory Maps .....................................................................................................7

2.0 Package Information .................................................................................................8

2.1 56-Lead TSOP.....................................................................................................8

2.2 64-Ball Easy BGA Package ....................................................................................9

3.0 Ballouts ................................................................................................................... 11

4.0 Signals .................................................................................................................... 13

4.1 Dual-Die Configurations ..................................................................................... 14

5.0 Bus Operations ........................................................................................................ 15

5.1 Read ............................................................................................................... 15

5.2 Write ............................................................................................................... 15

5.3 Output Disable.................................................................................................. 15

5.4 Standby ........................................................................................................... 16

5.5 Reset............................................................................................................... 16

6.0 Command Set .......................................................................................................... 17

6.1 Device Command Codes..................................................................................... 17

6.2 Device Command Bus Cycles .............................................................................. 18

7.0 Read Operation........................................................................................................ 21

7.1 Asynchronous Page-Mode Read ........................................................................... 21

7.2 Synchronous Burst-Mode Read............................................................................ 21

7.3 Read Device Identifier........................................................................................ 22

7.4 Read CFI.......................................................................................................... 22

8.0 Program Operation .................................................................................................. 23

8.1 Word Programming ........................................................................................... 23

8.2 Buffered Programming ....................................................................................... 23

8.3 Buffered Enhanced Factory Programming.............................................................. 24

8.4 Program Suspend.............................................................................................. 26

8.5 Program Resume............................................................................................... 27

8.6 Program Protection............................................................................................ 27

9.0 Erase Operation....................................................................................................... 28

9.1 Block Erase ...................................................................................................... 28

9.2 Blank Check ..................................................................................................... 28

9.3 Erase Suspend .................................................................................................. 29

9.4 Erase Resume................................................................................................... 29

9.5 Erase Protection ................................................................................................ 29

10.0 Security................................................................................................................... 30

10.1 Block Locking.................................................................................................... 30

10.2 Selectable OTP Blocks ........................................................................................ 32

10.3 Password Access ............................................................................................... 32

11.0 Status Register........................................................................................................ 33

11.1 Read Configuration Register................................................................................ 34

11.2 One-Time Programmable (OTP) Registers ............................................................. 40

12.0 Power and Reset Specifications ............................................................................... 43

P33-65nm

Datasheet Mar 2010

4Order Number: 320003-09

12.1 Power-Up and Power-Down .................................................................................43

12.2 Reset Specifications ...........................................................................................43

12.3 Power Supply Decoupling....................................................................................44

13.0 Maximum Ratings and Operating Conditions ............................................................45

13.1 Absolute Maximum Ratings .................................................................................45

13.2 Operating Conditions..........................................................................................45

14.0 Electrical Specifications ...........................................................................................46

14.1 DC Current Characteristics ..................................................................................46

14.2 DC Voltage Characteristics ..................................................................................47

15.0 AC Characteristics ....................................................................................................48

15.1 AC Test Conditions.............................................................................................48

15.2 Capacitance ......................................................................................................49

15.3 AC Read Specifications .......................................................................................49

15.4 AC Write Specifications.......................................................................................54

15.5 Program and Erase Characteristics .......................................................................58

16.0 Ordering Information...............................................................................................59

16.1 Discrete Products...............................................................................................59

16.2 SCSP Products...................................................................................................60

A Supplemental Reference Information.......................................................................61

A.1 Common Flash Interface.....................................................................................61

A.2 Flowcharts ........................................................................................................72

A.3 Write State Machine ...........................................................................................81

B Conventions - Additional Documentation .................................................................87

B.1 Acronyms .........................................................................................................87

B.2 Definitions and Terms ........................................................................................87

C Revision History.......................................................................................................89

Datasheet Mar 2010

5Order Number:320003-09

P33-65nm

1.0 Functional Description

1.1 Introduction

This document provides information about the Numonyx® Axcell™ Flash Memory (P33-

65nm) device and describes its features, operations, and specifications.

P33-65nm is the latest generation of Numonyx® Axcell™ Flash Memory (P33-65nm)

devices. P33-65nm device will be offered in 64-Mbit up through 2-Gbit densities. This

document covers specifically 256-Mbit and 512-Mbit (256M/256M) product information.

Benefits include more density in less space, high-speed interface NOR device, and

support for code and data storage. Features include high-performance synchronous-

burst read mode, fast asynchronous access times, low power, flexible security options,

and two industry-standard package choices.

P33-65nm is manufactured using Numonyx™ 65nm process technology.

1.2 Overview

This family of devices provides high performance at low voltage on a 16-bit data bus.

Individually erasable memory blocks are sized for optimum code and data storage.

Upon initial power-up or return from reset, the device defaults to asynchronous page-

mode read. Configuring the RCR enables synchronous burst-mode reads. In

synchronous burst mode, output data is synchronized with a user-supplied clock signal.

A WAIT signal provides an easy CPU-to-flash memory synchronization.

In addition to the enhanced architecture and interface, the device incorporates

technology that enables fast factory program and erase operations. Designed for low-

voltage systems, the P33 Family Flash memory supports read operations with VCC at

3.0V, and erase and program operations with VPP at 3.0V or 9.0V. Buffered Enhanced

Factory Programming provides the fastest flash array programming performance with

VPP at 9.0V, which increases factory throughput. With VPP at 3.0V, VCC and VPP can be

tied together for a simple, ultra low power design. In addition to voltage flexibility, a

dedicated VPP connection provides complete data protection when VPP ≤ VPPLK.

The Command User Interface is the interface between the system processor and all

internal operations of the device. An internal Write State Machine automatically

executes the algorithms and timings necessary for block erase and program. A Status

An industry-standard command sequence invokes program and erase automation. Each

erase operation erases one block. The Erase Suspend feature allows system software to

pause an erase cycle to read or program data in another block. Program Suspend

allows system software to pause programming to read other locations. Data is

programmed in word increments (16 bits).

The P33 Family Flash memory one-time-programmable (OTP) register allows unique

flash device identification that can be used to increase system security. The individual

Block Lock feature provides zero-latency block locking and unlocking. The P33-65nm

device adds enhanced protection via Password Access Mode which allows user to

protect write and/or read access to the defined blocks. In addition, the P33 Family

Flash memory may also provide the OTP permanent lock feature backward compatible

to the P33-130nm device.

P33-65nm

Datasheet Mar 2010

6Order Number: 320003-09

1.3 Virtual Chip Enable Description

The 512-Mbit P33 Family Flash memory employs a Virtual Chip Enable which combines

two 256-Mbit die with a common chip enable, CE# for Easy BGA packages. Address

A25 is then used to select between the die pair with CE# asserted, depending upon the

package option used. When chip enable is asserted and A25 is low (VIL), The lower

parameter die is selected; when chip enable is asserted and A25 is high (VIH), the

upper parameter die is selected.

Table 1: Flash Die Virtual Chip Enable Truth Table for 512 Mbit Easy BGA Package

Die Selected CE# A25

Lower Param Die L L

Upper Param Die L H

Datasheet Mar 2010

7Order Number:320003-09

P33-65nm

1.4 Memory Maps

Figure 1: P33-65nm Memory Map

16- Kword Block

64- Kword Block

16- Kword Block

Bottom Boot

Word Wide (x16) Mode

7F 0000 - 7 FFFFF

000000 – 003FFF

64- Kword Block

3 F0000 - 3FFFFF

130

64- Kword Block

FF 0000 - FFFFFF 258

256-Mbit

A<24:1 > 256 Mbit

16- Kword Block

64- Kword Block

004000 – 007FFF

008000 – 00 B FF F

00C000 – 00 FFFF

010000 – 01 FFFF

020000 – 02 FFFF

16- Kword Block

512 Mbit (256/256)

Word Wide (x16 ) Mode

64- Kword Block

515

514

512 Mbit (256/256)

A<25:1 > 512 Mbit

16- Kword Block

64- Kword Block

516

517

513

16- Kword Block

Top Boot 256 Mbit

Word Wide (x16) Mode

64- Kword Block

256

255

256-Mbit

A<24:1 > 256 Mbit

16- Kword Block

64- Kword Block

257

258

254

000000 – 00 FFFF

010000 – 01 FFFF

FF 0000 – F F3 FF F

FF 4000 – F F7 FF F

FF 8000 – FFB F FF

FFC 000 – FFFFFF

FE 0000 – F E FF FF

(256/256)

1FFC000 - 1FFFFFF

1FF8000 - 1FFBFFF

1FF4000 - 1FF7FFF

1FF0000 - 1FF3FFF

1FE0000 - 1FEFFFF

1FD0000 - 1FDFFFF 512

16- Kword Block

64- Kword Block

16- Kword Block

64- Kword Block

000C000 - 000FFFF

0008000 - 000BFFF

0004000 - 0007 FFF

0000000 - 0003 FFF

0020000 - 002 FFFF

0010000 - 001 FFFF 4

256 Mbit

P33-65nm

Datasheet Mar 2010

8Order Number: 320003-09

2.0 Package Information

2.1 56-Lead TSOP

Figure 2: TSOP Mechanical Specifications (256-Mbit)

Table 2: TSOP Package Dimensions (Sheet 1 of 2)

Product Information Symbol

Millimeters Inches

Note

Min Nom Max Min Nom Max

Package Height A - - 1.200 - - 0.047

Standoff A10.050 - - 0.002 - -

Package Body Thickness A20.965 0.995 1.025 0.038 0.039 0.040

Lead Width b 0.100 0.150 0.200 0.004 0.006 0.008

Lead Thickness c 0.100 0.150 0.200 0.004 0.006 0.008

Package Body Length D118.200 18.400 18.600 0.717 0.724 0.732 Note

Package Body Width E 13.800 14.000 14.200 0.543 0.551 0.559 Note

Lead Pitch e - 0.500 - - 0.0197 -

Terminal Dimension D 19.800 20.00 20.200 0.780 0.787 0.795

Lead Tip Length L 0.500 0.600 0.700 0.020 0.024 0.028

Detail A

Pin 1

Detail B

See Detail A

See Detail B

Seating

Plane

See Note 2

See Notes 1 and 3

Datasheet Mar 2010

9Order Number:320003-09

P33-65nm

2.2 64-Ball Easy BGA Package

Lead Count N -56- -56-

Lead Tip Angle θ0° 3° 5° 0° 3° 5°

Seating Plane Coplanarity Y - - 0.100 - - 0.004

Lead to Package Offset Z 0.150 0.250 0.350 0.006 0.010 0.014

Notes:

1. One dimple on package denotes Pin 1.

2. If two dimples, then the larger dimple denotes Pin 1.

3. Pin 1 will always be in the upper left corner of the package, in reference to the product mark.

Table 2: TSOP Package Dimensions (Sheet 2 of 2)

Product Information Symbol

Millimeters Inches

Note

Min Nom Max Min Nom Max

Figure 3: Easy BGA Mechanical Specifications (256-Mbit, 512-Mbit)

Seating

Plane

Top View - Ball side down Bottom View - Ball Side Up

Ball A1

Corner

Note: Drawing not to scale

87654321

Ball A1

Corner

P33-65nm

Datasheet Mar 2010

10 Order Number: 320003-09

Table 3: Easy BGA Package Dimensions

Product Information Symbol

Millimeters Inches

Notes

Min Nom Max Min Nom Max

Package Height A - - 1.200 - - 0.0472

Ball Height A1 0.250 - - 0.0098 - -

Package Body Thickness A2 - 0.780 - - 0.0307 -

Ball (Lead) Width b 0.330 0.430 0.530 0.0130 0.0169 0.0209

Package Body Width D 9.900 10.000 10.100 0.3898 0.3937 0.3976 Note

Package Body Length E 12.900 13.000 13.100 0.5079 0.5118 0.5157 Note

Pitch [e] - 1.000 - - 0.0394 -

Ball (Lead) Count N-64- -64-

Seating Plane Coplanarity Y - - 0.100 - - 0.0039

Corner to Ball A1 Distance Along D S1 1.400 1.500 1.600 0.0551 0.0591 0.0630 Note

Corner to Ball A1 Distance Along E S2 2.900 3.000 3.100 0.1142 0.1181 0.1220 Note

Note: Daisy Chain Evaluation Unit information is at Numonyx™ Flash Memory Packaging Technology http://

developer.numonyx.com/design/flash/packtech.

Datasheet Mar 2010

11 Order Number:320003-09

P33-65nm

3.0 Ballouts

Notes:

1. A1 is the least significant address bit.

2. A24 is valid for 256-Mbit densities; otherwise, it is a no connect (NC).

3. No Internal Connection on VCC Pin 13; it may be driven or floated. For legacy designs, pin can be tied to Vcc.

4. One dimple on package denotes Pin 1, which will always be in the upper left corner of the package, in reference to the

product mark.

Figure 4: 56-Lead TSOP Pinout (256-Mbit)

Numonyx®

Axcell™ Flash Memory (P33)

56-Lead TSOP Pinout

14 mm x 20 mm

Top View

A14

A13

A12

A10

A11

A23

A21

VSS

A22

VCC

WP#

A20

WE#

A19

A18

RFU

VSS

A24

WAIT

DQ15

DQ7

A17

DQ14

DQ13

DQ5

DQ6

DQ12

ADV#

CLK

DQ4

RST#

A16

DQ3

VPP

DQ10

VCCQ

DQ9

DQ2

DQ1

DQ0

VCC

DQ8

OE#

CE#

VSS

A15

DQ11

P33-65nm

Datasheet Mar 2010

12 Order Number: 320003-09

Notes:

1. A1 is the least significant address bit.

2. A24 is valid for 256-Mbit densities and above; otherwise, it is a no connect.

3. A25 is valid for 512-Mbit densities; otherwise, it is a no connect.

4. One dimple on package denotes A1 Pin, which will always be in the upper left corner of the package, in reference to the

product mark.

Figure 5: 64-Ball Easy BGA Ballout (256-Mbit, 512-Mbit)

234567

Easy BGA

Top View- Ball side down

Easy BGA

Bottom View- Ball side up

8234

A2 VSS A9 A14CE# A19 RFUA25

RFU VSS VCC DQ13VSS DQ7 A24VSS

A3 A7 A10 A15A12 A20 A21WP#

A4 A5 A11 VCCQRST# A16 A17VCCQ

RFUDQ8 DQ1 DQ9 DQ4DQ3 DQ15CLK

RFU OE#DQ0 DQ10 DQ12DQ11 WAITADV#

WE#A23 RFU DQ2 DQ5VCCQ DQ14DQ6

A1 A6 A8 A13VPP A18 A22VCC

A23

A4A5A11VCCQ RST#A16A17 VCCQ

A1A6A8A13 VPPA18A22 VCC

A3A7A10A15 A12A20A21 WP#

RFU DQ8DQ1DQ9DQ4 DQ3DQ15 CLK

RFUOE# DQ0DQ10DQ12 DQ11WAIT ADV#

WE# RFUDQ2DQ5 VCCQDQ14 DQ6

A2VSSA9A14 CE#A19RFU A25

RFUVSSVCCDQ13 VSSDQ7A24 VSS

Datasheet Mar 2010

13 Order Number:320003-09

P33-65nm

4.0 Signals

Table 4: TSOP and Easy BGA Signal Descriptions (Sheet 1 of 2)

Symbol Type Name and Function

A[MAX:1] Input

ADDRESS INPUTS: Device address inputs. 256-Mbit: A[24:1]; 512-Mbit: A[25:1]. Note: The

virtual selection of the 256-Mbit “Top parameter” die in the dual-die 512-Mbit configuration is

accomplished by setting A25 high (VIH).

DQ[15:0] Input/

Output

DATA INPUT/OUTPUTS: Inputs data and commands during write cycles; outputs data during

reads of memory, status register, OTP register, and read configuration register. Data balls float when

the CE# or OE# are deasserted. Data is internally latched during writes.

ADV# Input

ADDRESS VALID: Active low input. During synchronous read operations, addresses are latched on

the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first.

In asynchronous mode, the address is latched when ADV# going high or continuously flows through

if ADV# is held low.

WARNING: Designs not using ADV# must tie it to VSS to allow addresses to flow through.

CE# Input

CHIP ENABLE: Active low input. CE# low selects the associated flash memory die. When asserted,

flash internal control logic, input buffers, decoders, and sense amplifiers are active. When

deasserted, the associated flash die is deselected, power is reduced to standby levels, data and

WAIT outputs are placed in high-Z state.

WARNING: All chip enables must be high when device is not in use.

CLK Input

CLOCK: Synchronizes the device with the system’s bus frequency in synchronous-read mode.

During synchronous read operations, addresses are latched on the rising edge of ADV#, or on the

next valid CLK edge with ADV# low, whichever occurs first.

WARNING: Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.

OE# Input OUTPUT ENABLE: Active low input. OE# low enables the device’s output data buffers during read

cycles. OE# high places the data outputs and WAIT in High-Z.

RST# Input

RESET: Active low input. RST# resets internal automation and inhibits write operations. This

provides data protection during power transitions. RST# high enables normal operation. Exit from

reset places the device in asynchronous read array mode.

WAIT Output

WAIT: Indicates data valid in synchronous array or non-array burst reads. RCR[10], (WT)

determines its polarity when asserted. WAIT’s active output is VOL or VOH when CE# and OE# are

VIL. WAIT is high-Z if CE# or OE# is VIH.

• In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and

valid data when deasserted.

• In asynchronous page mode, and all write modes, WAIT is deasserted.

WE# Input WRITE ENABLE: Active low input. WE# controls writes to the device. Address and data are latched

on the rising edge of WE#.

WP# Input

WRITE PROTECT: Active low input. WP# low enables the lock-down mechanism. Blocks in lock-

down cannot be unlocked with the Unlock command. WP# high overrides the lock-down function

enabling blocks to be erased or programmed using software commands.

VPP Power/

Input

ERASE AND PROGRAM POWER: A valid voltage on this pin allows erasing or programming.

Memory contents cannot be altered when VPP ≤ VPPLK. Block erase and program at invalid VPP

voltages should not be attempted.

Set VPP = VPPL for in-system program and erase operations. To accommodate resistor or diode drops

from the system supply, the VIH level of VPP can be as low as VPPL min. VPP must remain above VPPL

min to perform in-system flash modification. VPP may be 0 V during read operations.

VPPH can be applied to main blocks for 1000 cycles maximum and to parameter blocks for 2500

cycles. VPP can be connected to 9 V for a cumulative total not to exceed 80 hours. Extended use of

this pin at 9 V may reduce block cycling capability.

VCC Power DEVICE CORE POWER SUPPLY: Core (logic) source voltage. Writes to the flash array are inhibited

when VCC ≤ VLKO. Operations at invalid VCC voltages should not be attempted.

VCCQ Power OUTPUT POWER SUPPLY: Output-driver source voltage.

VSS Power GROUND: Connect to system ground. Do not float any VSS connection.

P33-65nm

Datasheet Mar 2010

14 Order Number: 320003-09

4.1 Dual-Die Configurations

Note: Amax = VIH selects the Top parameter Die; Amax = VIL selects the Bottom Parameter

Die.

RFU — RESERVED FOR FUTURE USE: Reserved by Numonyx for future device functionality and

enhancement. These should be treated in the same way as a Don’t Use (DU) signal.

DU — DON’T USE: Do not connect to any other signal, or power supply; must be left floating.

NC — NO CONNECT: No internal connection; can be driven or floated.

Table 4: TSOP and Easy BGA Signal Descriptions (Sheet 2 of 2)

Symbol Type Name and Function

Figure 6: 512-Mbit Easy BGA Block Diagram

Top Param Die

(256-Mbit)

Bottom Param Die

(256-Mbit)

WP#

CLK

CE#

ADV#

OE#

WAIT

WE#

RST#

VCC

VPP

DQ[15:0]

A[MAX:1]

VCCQ

VSS

Easy BGA 512-Mbit (Dual-Die) Configuration

Datasheet Mar 2010

15 Order Number:320003-09

P33-65nm

5.0 Bus Operations

CE# low and RST# high enable device read operations. The device internally decodes

upper address inputs to determine the accessed block. ADV# low opens the internal

address latches. OE# low activates the outputs and gates selected data onto the I/O

bus.

In asynchronous mode, the address is latched when ADV# goes high or continuously

flows through if ADV# is held low. In synchronous mode, the address is latched by the

first of either the rising ADV# edge or the next valid CLK edge with ADV# low (WE#

and RST# must be VIH; CE# must be VIL).

Bus cycles to/from the P33-65nm device conform to standard microprocessor bus

operations. Table 5, “Bus Operations Summary”summarizes the bus operations and the

logic levels that must be applied to the device control signal inputs.

5.1 Read

To perform a read operation, RST# and WE# must be deasserted while CE# and OE#

are asserted. CE# is the device-select control. When asserted, it enables the flash

memory device. OE# is the data-output control. When asserted, the addressed flash

memory data is driven onto the I/O bus.

5.2 Write

To perform a write operation, both CE# and WE# are asserted while RST# and OE# are

deasserted. During a write operation, address and data are latched on the rising edge

of WE# or CE#, whichever occurs first. Table 7, “Command Bus Cycles” on page 19

shows the bus cycle sequence for each of the supported device commands, while

Table 6, “Command Codes and Definitions” on page 17 describes each command. See

Section 15.0, “AC Characteristics” on page 48 for signal-timing details.

Note: Write operations with invalid VCC and/or VPP voltages can produce spurious results and

should not be attempted.

5.3 Output Disable

When OE# is deasserted, device outputs DQ[15:0] are disabled and placed in a high-

impedance (High-Z) state, WAIT is also placed in High-Z.

Table 5: Bus Operations Summary

Bus Operation RST# CLK ADV# CE# OE# WE# WAIT DQ[15:0] Notes

Read

Asynchronous VIH XL L L H

Deasserted Output

Synchronous VIH Running L L L H Driven Output

Write VIH X L L H L High-Z Input 1

Output Disable VIH X X L H H High-Z High-Z 2

Standby VIH X X H X X High-Z High-Z 2

Reset VIL X X X X X High-Z High-Z 2,3

Notes:

1. Refer to the Table 7, “Command Bus Cycles” on page 19 for valid DQ[15:0] during a write

operation.

2. X = Don’t Care (H or L).

3. RST# must be at VSS ± 0.2 V to meet the maximum specified power-down current.

P33-65nm

Datasheet Mar 2010

16 Order Number: 320003-09

5.4 Standby

When CE# is deasserted the device is deselected and placed in standby, substantially

reducing power consumption. In standby, the data outputs are placed in High-Z,

independent of the level placed on OE#. Standby current, ICCS, is the average current

measured over any 5 ms time interval, 5 μs after CE# is deasserted. During standby,

average current is measured over the same time interval 5 μs after CE# is deasserted.

When the device is deselected (while CE# is deasserted) during a program or erase

operation, it continues to consume active power until the program or erase operation is

completed.

5.5 Reset

As with any automated device, it is important to assert RST# when the system is reset.

When the system comes out of reset, the system processor attempts to read from the

flash memory if it is the system boot device. If a CPU reset occurs with no flash

memory reset, improper CPU initialization may occur because the flash memory may

be providing status information rather than array data. Flash memory devices from

Numonyx allow proper CPU initialization following a system reset through the use of the

RST# input. RST# should be controlled by the same low-true reset signal that resets

the system CPU.

After initial power-up or reset, the device defaults to asynchronous Read Array mode,

and the Status Register is set to 0x80. Asserting RST# de-energizes all internal

circuits, and places the output drivers in High-Z. When RST# is asserted, the device

shuts down the operation in progress, a process which takes a minimum amount of

time to complete. When RST# has been deasserted, the device is reset to

asynchronous Read Array state.

Note: If RST# is asserted during a program or erase operation, the operation is terminated

and the memory contents at the aborted location (for a program) or block (for an

erase) are no longer valid, because the data may have been only partially written or

erased.

When returning from a reset (RST# deasserted), a minimum wait is required before the

initial read access outputs valid data. Also, a minimum delay is required after a reset

before a write cycle can be initiated. After this wake-up interval passes, normal

operation is restored. See Section 15.0, “AC Characteristics” on page 48 for details

about signal-timing.

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P33-65nm

6.0 Command Set

6.1 Device Command Codes

The system Central Processing Unit provides control of all in-system read, write, and

erase operations of the device via the system bus. The on-chip WSM manages all block-

erase and word-program algorithms.

Device commands are written to the CUI to control all flash memory device operations.

The CUI does not occupy an addressable memory location; it is the mechanism through

which the flash device is controlled. Ta b l e 6 shows valid device command codes and

descriptions.

Table 6: Command Codes and Definitions (Sheet 1 of 2)

Mode Code Device Mode Description

Read

0xFF Read Array Places the device in Read Array mode. Array data is output on DQ[15:0].

0x70 Read Status

Places the device in Read Status Register mode. The device enters this mode

after a program or erase command is issued. SR data is output on DQ[7:0].

0x90

Read Device ID

or Configuration

Places device in Read Device Identifier mode. Subsequent reads output

manufacturer/device codes, Configuration Register data, Block Lock status,

or OTP register data on DQ[15:0].

0x98 Read Query Places the device in Read Query mode. Subsequent reads output Common

Flash Interface information on DQ[7:0].

0x50 Clear Status

The WSM can only set SR error bits. The Clear Status Register command is

used to clear the SR error bits.

Write

0x40 Word Program

Setup

First cycle of a 2-cycle programming command; prepares the CUI for a write

operation. On the next write cycle, the address and data are latched and the

WSM executes the programming algorithm at the addressed location. During

program operations, the device responds only to Read Status Register and

Program Suspend commands. CE# or OE# must be toggled to update the

Status Register in asynchronous read. CE# or ADV# must be toggled to

update the SR Data for synchronous Non-array reads. The Read Array

command must be issued to read array data after programming has finished.

0xE8 Buffered Program This command loads a variable number of words up to the buffer size of 512

words onto the program buffer.

0xD0 Buffered Program

Confirm

The confirm command is Issued after the data streaming for writing into the

buffer is done. This instructs the WSM to perform the Buffered Program

algorithm, writing the data from the buffer to the flash memory array.

0x80 BEFP Setup

First cycle of a 2-cycle command; initiates the BEFP mode. The CUI then

waits for the BEFP Confirm command, 0xD0, that initiates the BEFP

algorithm. All other commands are ignored when BEFP mode begins.

0xD0 BEFP Confirm If the previous command was BEFP Setup (0x80), the CUI latches the

address and data, and prepares the device for BEFP mode.

Erase

0x20 Block Erase Setup

First cycle of a 2-cycle command; prepares the CUI for a block-erase

operation. The WSM performs the erase algorithm on the block addressed by

the Erase Confirm command. If the next command is not the Erase Confirm

(0xD0) command, the CUI sets Status Register bits SR [5,4], and places the

device in Read Status Register mode.

0xD0 Block Erase Confirm

If the first command was Block Erase Setup (0x20), the CUI latches the

address and data, and the WSM erases the addressed block. During block-

erase operations, the device responds only to Read Status Register and Erase

Suspend commands. CE# or OE# must be toggled to update the Status

SR Data for synchronous Non-array reads.

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6.2 Device Command Bus Cycles

Device operations are initiated by writing specific device commands to the CUI. See

Table 7, “Command Bus Cycles” on page 19. Several commands are used to modify

array data including Word Program and Block Erase commands. Writing either

command to the CUI initiates a sequence of internally-timed functions that culminate in

the completion of the requested task. However, the operation can be aborted by either

asserting RST# or by issuing an appropriate suspend command.

Suspend

0xB0 Program or Erase

Suspend

This command issued to any device address initiates a suspend of the

currently-executing program or block erase operation. The Status Register

indicates successful suspend operation by setting either SR.2 (program

suspended) or SR 6 (erase suspended), along with SR.7 (ready). The WSM

remains in the suspend mode regardless of control signal states (except for

RST# asserted).

0xD0 Suspend Resume This command issued to any device address resumes the suspended program

or block-erase operation.

Protection

0x60 Block lock Setup

First cycle of a 2-cycle command; prepares the CUI for block lock

configuration changes. If the next command is not Block Lock (0x01), Block

Unlock (0xD0), or Block Lock-Down (0x2F), the CUI sets SR.5 and SR.4,

indicating a command sequence error.

0x01 Block lock If the previous command was Block Lock Setup (0x60), the addressed block

is locked.

0xD0 Unlock Block

If the previous command was Block Lock Setup (0x60), the addressed block

is unlocked. If the addressed block is in a lock-down state, the operation has

no effect.

0x2F Lock-Down Block If the previous command was Block Lock Setup (0x60), the addressed block

is locked down.

0xC0 Protection program

setup

First cycle of a 2-cycle command; prepares the device for a OTP register or

Lock Register program operation. The second cycle latches the register

address and data, and starts the programming algorithm to program data the

the OTP array.

Configuration

0x60 Read Configuration

First cycle of a 2-cycle command; prepares the CUI for device read

configuration. If the Set Read Configuration Register command (0x03) is not

the next command, the CUI sets Status Register bits SR.5 and SR.4,

indicating a command sequence error.

0x03 Read Configuration

If the previous command was Read Configuration Register Setup (0x60), the

CUI latches the address and writes A[15:0]to the Read Configuration

access array data.

blank check

0xBC Blank Check First cycle of a 2-cycle command; initiates the Blank Check operation on a

main block.

0xD0 Blank Check

Confirm

Second cycle of blank check command sequence; it latches the block address

and executes blank check on the main array block.

other 0xEB Extended Function

Interface command

This command is used in extended function interface. first cycle of a multiple-

cycle command second cycle is a Sub-Op-Code, the data written on third

cycle is one less than the word count; the allowable value on this cycle are 0

through 511. The subsequent cycles load data words into the program buffer

at a specified address until word count is achieved.

Table 6: Command Codes and Definitions (Sheet 2 of 2)

Mode Code Device Mode Description

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P33-65nm

Table 7: Command Bus Cycles (Sheet 1 of 2)

Mode Command Bus

Cycles

First Bus Cycle Second Bus Cycle

Oper Addr(1) Data(2) Oper Addr(1) Data(2)

Read

Read Array 1 Write DnA 0xFF - - -

Read Device

Identifier ≥ 2 Write DnA 0x90 Read DBA + IA ID

Read CFI ≥ 2WriteDnA0x98ReadDBA + CFI-ACFI-D

Read Status Register 2 Write DnA 0x70 Read DnA SRD

Clear Status Register 1 Write DnA 0x50 - - -

Program

Word Program 2 Write WA 0x40 Write WA WD

Buffered Program(3) > 2WriteWA0xE8Write WA N - 1

Buffered Enhanced

Factory Program

(BEFP)(4) > 2 Write WA 0x80 Write WA 0xD0

Erase Block Erase 2 Write BA 0x20 Write BA 0xD0

Suspend

Program/Erase

Suspend 1WriteDnA0xB0- - -

Program/Erase

Resume 1WriteDnA0xD0- - -

Protection

Lock Block 2 Write BA 0x60 Write BA 0x01

Unlock Block 2 Write BA 0x60 Write BA 0xD0

Lock-down Block 2 Write BA 0x60 Write BA 0x2F

Program OTP register 2 Write PRA 0xC0 Write OTP-RA OTP-D

Program Lock

Configuration

Program Read

Configuration

2 Write RCD 0x60 Write RCD 0x03

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Others

Blank Check 2 Write BA 0xBC Write BA D0

Extended Function

Interface

command(5) >2 Write WA 0xEB Write WA Sub-Op

code

Notes:

1. First command cycle address should be the same as the operation’s target address.

DBA = Device Base Address (NOTE: needed for dual-die 512Mbit device)

DnA = Address within the device.

IA = Identification code address offset.

CFI-A = Read CFI address offset.

WA = Word address of memory location to be written.

BA = Address within the block.

OTP-RA = OTP register address.

LRA = Lock Register address.

RCD = Read Configuration Register data on A[16:1].

2. ID = Identifier data.

CFI-D = CFI data on DQ[15:0].

SRD = Status Register data.

WD = Word data.

N = Word count of data to be loaded into the write buffer.

OTP-D = OTP register data.

LRD = Lock Register data.

3. The second cycle of the Buffered Program Command is the word count of the data to be loaded into the write buffer. This

is followed by up to 512 words of data.Then the confirm command (0xD0) is issued, triggering the array programming

operation.

4. The confirm command (0xD0) is followed by the buffer data.

5. The second cycle is a Sub-Op-Code, the data written on third cycle is N-1; 1=< N <=512. The subsequent cycles load

data words into the program buffer at a specified address until word count is achieved, after the data words are loaded,

the final cycle is the confirm cycle 0xD0)

Table 7: Command Bus Cycles (Sheet 2 of 2)

Mode Command Bus

Cycles

First Bus Cycle Second Bus Cycle

Oper Addr(1) Data(2) Oper Addr(1) Data(2)

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P33-65nm

7.0 Read Operation

The device can be in any of four read states: Read Array, Read Identifier, Read Status

or Read Query. Upon power-up, or after a reset, the device defaults to Read Array

mode. To change the read state, the appropriate read command must be written to the

device (see Section 6.2, “Device Command Bus Cycles” on page 18). The following

sections describe read-mode operations in detail.

The device supports two read modes: asynchronous page mode and synchronous burst

mode. Asynchronous page mode is the default read mode after device power-up or a

reset. The RCR must be configured to enable synchronous burst reads of the flash

memory array (see Section 11.1, “Read Configuration Register” on page 34).

7.1 Asynchronous Page-Mode Read

Following a device power-up or reset, asynchronous page mode is the default read

mode and the device is set to Read Array mode. However, to perform array reads after

any other device operation (e.g. write operation), the Read Array command must be

issued in order to read from the flash memory array.

Note: Asynchronous page-mode reads can only be performed when RCR.15 is set

The Clear Status Register command clears the status register. It functions independent

of VPP. The WSM sets and clears SR[7,6,2], but it sets bits SR[5,3,1] without clearing

them. The Status Register should be cleared before starting a command sequence to

avoid any ambiguity. A device reset also clears the Status Register.

To perform an asynchronous page-mode read, an address is driven onto the address

bus, and CE# and ADV# are asserted. WE# and RST# must already have been

deasserted. WAIT is deasserted during asynchronous page mode. ADV# can be driven

high to latch the address, or it must be held low throughout the read cycle. CLK is not

used for asynchronous page-mode reads, and is ignored. If only asynchronous reads

are to be performed, CLK should be tied to a valid VIH level, WAIT signal can be floated

and ADV# must be tied to ground. Array data is driven onto DQ[15:0] after an initial

access time tAVQV delay. (see Section 15.0, “AC Characteristics” on page 48).

In asynchronous page mode, sixteen data words are “sensed” simultaneously from the

flash memory array and loaded into an internal page buffer. The buffer word

corresponding to the initial address on the Address bus is driven onto DQ[15:0] after

the initial access delay. The lowest four address bits determine which word of the

16-word page is output from the data buffer at any given time.

7.2 Synchronous Burst-Mode Read

To perform a synchronous burst-read, an initial address is driven onto the address bus,

and CE# and ADV# are asserted. WE# and RST# must already have been deasserted.

ADV# is asserted, and then deasserted to latch the address. Alternately, ADV# can

remain asserted throughout the burst access, in which case the address is latched on

the next valid CLK edge while ADV# is asserted.

During synchronous array and non-array read modes, the first word is output from the

data buffer on the next valid CLK edge after the initial access latency delay (see Section

11.1.2, “Latency Count” on page 35). Subsequent data is output on valid CLK edges

following a minimum delay. However, for a synchronous non-array read, the same word

of data will be output on successive clock edges until the burst length requirements are

satisfied. Refer to the following waveforms for more detailed information:

•Figure 20, “Synchronous Single-Word Array or Non-array Read Timing” on page 53

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•Figure 21, “Continuous Burst Read, showing an Output Delay Timing” on page 53

•Figure 22, “Synchronous Burst-Mode Four-Word Read Timing” on page 54

7.3 Read Device Identifier

The Read Device Identifier command instructs the device to output manufacturer code,

device identifier code, block-lock status, OTP register data, or configuration register

data (see Section 6.2, “Device Command Bus Cycles” on page 18 for details on issuing

the Read Device Identifier command). Table 8, “Device Identifier Information” on

page 22 and Table 9, “Device ID codes” on page 22 show the address offsets and data

values for this device.

7.4 Read CFI

The Read CFI command instructs the device to output Common Flash Interface data

when read.

Table 8: Device Identifier Information

Item Address(1,2) Data

Manufacturer Code 0x00 0x89h

Device ID Code 0x01 ID (see Ta b l e 9 )

Block Lock Configuration:

BBA + 0x02

Lock Bit:

• Block Is Unlocked DQ0 = 0b0

• Block Is Locked DQ0 = 0b1

• Block Is not Locked-Down DQ1 = 0b0

• Block Is Locked-Down DQ1 = 0b1

Read Configuration Register 0x05 RCR Contents

General Purpose Register(3) DBA + 0x07 general data

Lock Register 0 0x80 PR-LK0

64-bit Factory-Programmed OTP register 0x81–0x84 Factory OTP register data

64-bit User-Programmable OTP Register 0x85–0x88 User OTP register data

Lock Register 1 0x89 OTP register lock data

128-bit User-Programmable OTP registers 0x8A–0x109 User OTP register data

Notes:

1. BBA = Block Base Address.

2. DBA = Device base Address, Numonyx reserves other configuration address locations

3. In P33-65nm, the GPR is used as read out register for Extended Functional interface command.

Table 9: Device ID codes

ID Code Type Device Density

Device Identifier Codes

–T

(Top Parameter)

–B

(Bottom Parameter)

Device Code 256-Mbit 891F 8922

Note: The 512-Mbit devices do not have a Device ID associated with them. Each die within the stack can be identified by either

of the 256-Mbit Device ID codes depending on its parameter option.

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P33-65nm

8.0 Program Operation

The device supports three programming methods: Word Programming (40h or 10h),

Buffered Programming (E8h, D0h), and Buffered Enhanced Factory Programming (80h,

D0h). The following sections describe device programming in detail.

Successful programming requires the addressed block to be unlocked. If the block is

locked down, WP# must be deasserted and the block must be unlocked before

attempting to program the block. Attempting to program a locked block causes a

program error (SR.4 and SR.1 set) and termination of the operation. See Section 10.0,

“Security” on page 30 for details on locking and unlocking blocks.

8.1 Word Programming

Word programming operations are initiated by writing the Word Program Setup

command to the device. This is followed by a second write to the device with the

address and data to be programmed. The device outputs Status Register data when

read. See Figure 31, “Word Program Flowchart” on page 72. VPP must be above VPPLK,

and within the specified VPPL min/max values.

During programming, the WSM executes a sequence of internally-timed events that

program the desired data bits at the addressed location, and verifies that the bits are

sufficiently programmed. Programming the flash memory array changes “ones” to

“zeros”. Memory array bits that are zeros can be changed to ones only by erasing the

block.

The Status Register can be examined for programming progress and errors by reading

at any address. The device remains in the Read Status Register state until another

command is written to the device.

Status Register bit SR.7 indicates the programming status while the sequence

executes. Commands that can be issued to the device during programming are

Program Suspend, Read Status Register, Read Device Identifier, Read CFI, and Read

Array (this returns unknown data).

When programming has finished, Status Register bit SR.4 (when set) indicates a

programming failure. If SR.3 is set, the WSM could not perform the word programming

operation because VPP was outside of its acceptable limits. If SR.1 is set, the word

programming operation attempted to program a locked block, causing the operation to

abort.

Before issuing a new command, the Status Register contents should be examined and

then cleared using the Clear Status Register command. Any valid command can follow,

when word programming has completed.

8.2 Buffered Programming

The device features a 512-word buffer to enable optimum programming performance.

For Buffered Programming, data is first written to an on-chip write buffer. Then the

buffer data is programmed into the flash memory array in buffer-size increments. This

can improve system programming performance significantly over non-buffered

programming. (see Figure 33, “Buffer Program Flowchart” on page 74).

When the Buffered Programming Setup command is issued, Status Register information

is updated and reflects the availability of the buffer. SR.7 indicates buffer availability: if

set, the buffer is available; if cleared, the buffer is not available.

Note: The device default state is to output SR data after the Buffer Programming Setup

Command. CE# and OE# toggle drive device to update Status Register. It is not

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allowed to issue 70h to read SR data after E8h command otherwise 70h would be

counted as Word Count.

On the next write, a word count is written to the device at the buffer address. This tells

the device how many data words will be written to the buffer, up to the maximum size

of the buffer.

On the next write, a device start address is given along with the first data to be written

to the flash memory array. Subsequent writes provide additional device addresses and

data. All data addresses must lie within the start address plus the word count.

Optimum programming performance and lower power usage are obtained by aligning

the starting address at the beginning of a 512-word boundary (A[9:1] = 0x00). The

maximum buffer size would be 256-word if the misaligned address range is crossing a

512-word boundary during programming.

After the last data is written to the buffer, the Buffered Programming Confirm command

must be issued to the original block address. The WSM begins to program buffer

contents to the flash memory array. If a command other than the Buffered

Programming Confirm command is written to the device, a command sequence error

occurs and SR[7,5,4] are set. If an error occurs while writing to the array, the device

stops programming, and SR[7,4] are set, indicating a programming failure.

When Buffered Programming has completed, additional buffer writes can be initiated by

issuing another Buffered Programming Setup command and repeating the buffered

program sequence. Buffered programming may be performed with VPP = VPPL or VPPH

(see Section 13.2, “Operating Conditions” on page 45 for limitations when operating

the device with VPP = VPPH).

If an attempt is made to program past an erase-block boundary using the Buffered

Program command, the device aborts the operation. This generates a command

sequence error, and SR[5,4] are set.

If Buffered programming is attempted while VPP is below VPPLK, SR[4,3] are set. If any

errors are detected that have set Status Register bits, the Status Register should be

cleared using the Clear Status Register command.

8.3 Buffered Enhanced Factory Programming

Buffered Enhanced Factory Programing (BEFP) speeds up Multi-Level Cell (MLC) flash

programming. The enhanced programming algorithm used in BEFP eliminates

traditional programming elements that drive up overhead in device programmer

systems. (see Figure 34, “BEFP Flowchart” on page 75).

BEFP consists of three phases: Setup, Program/Verify, and Exit It uses a write buffer to

spread MLC program performance across 512 data words. Verification occurs in the

same phase as programming to accurately program the flash memory cell to the

correct bit state.

A single two-cycle command sequence programs the entire block of data. This

enhancement eliminates three write cycles per buffer: two commands and the word

count for each set of 512 data words. Host programmer bus cycles fill the device’s write

buffer followed by a status check. SR.0 indicates when data from the buffer has been

programmed into sequential flash memory array locations.

Following the buffer-to-flash array programming sequence, the Write State Machine

(WSM) increments internal addressing to automatically select the next 512-word array

boundary. This aspect of BEFP saves host programming equipment the address-bus

setup overhead.

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P33-65nm

With adequate continuity testing, programming equipment can rely on the WSM’s

internal verification to ensure that the device has programmed properly. This eliminates

the external post-program verification and its associated overhead.

8.3.1 BEFP Requirements and Considerations

BEFP requirements:

• Case temperature: TC = 30 °C ± 10 °C

•Nominal VCC

•VPP driven to V

PPH

• Target block must be unlocked before issuing the BEFP Setup and Confirm

commands

• The first-word address for the block to be programmed must be held constant from

the setup phase through all data streaming into the target block, until transition to

the exit phase is desired.

• The first-word address must align with the start of an array buffer boundary. Word

buffer boundaries in the array are determined by A[8:0] (0x000 through 01FF); the

alignment start point is A[8:0] = 0x000.

BEFP considerations:

• For optimum performance, cycling must be limited below 50 erase cycles per block.

Some degradation in performance may occur is this limit is exceeded, but the

internal algorithm continues to work properly.

• BEFP programs one block at a time; all buffer data must fall within a single block. If

the internal address counter increments beyond the block’s maximum address,

addressing wraps around to the beginning of the block.

• BEFP cannot be suspended

• Programming to the flash memory array can occur only when the buffer is full. If

the number of words is less than 512, remaining locations must be filled with

0xFFFF.

8.3.2 BEFP Setup Phase

After receiving the BEFP Setup and Confirm command sequence, Status Register bit

SR.7 (Ready) is cleared, indicating that the WSM is busy with BEFP algorithm startup. A

delay before checking SR.7 is required to allow the WSM enough time to perform all of

its setups and checks (Block-Lock status, VPP level, etc.). If an error is detected, SR.4

is set and BEFP operation terminates. If the block was found to be locked, SR.1 is also

set. SR.3 is set if the error occurred due to an incorrect VPP level.

Note: Reading from the device after the BEFP Setup and Confirm command sequence outputs

Status Register data. Do not issue the Read Status Register command; it will be

interpreted as data to be loaded into the buffer.

8.3.3 BEFP Program/Verify Phase

After the BEFP Setup Phase has completed, the host programming system must check

SR[7,0] to determine the availability of the write buffer for data streaming. SR.7

cleared indicates the device is busy and the BEFP program/verify phase is activated.

SR.0 indicates the write buffer is available.

Two basic sequences repeat in this phase: loading of the write buffer, followed by buffer

data programming to the array. For BEFP, the count value for buffer loading is always

the maximum buffer size of 512 words. During the buffer-loading sequence, data is

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stored to sequential buffer locations starting at address 0x00. Programming of the

buffer contents to the flash memory array starts as soon as the buffer is full. If the

number of words is less than 512, the remaining buffer locations must be filled with

0xFFFF.

Caution: The buffer must be completely filled for programming to occur. Supplying an

address outside of the current block's range during a buffer-fill sequence

causes the algorithm to exit immediately. Any data previously loaded into the

buffer during the fill cycle is not programmed into the array.

The starting address for data entry must be buffer size aligned, if not the BEFP

algorithm will be aborted and the program fails and (SR.4) flag will be set.

Data words from the write buffer are directed to sequential memory locations in the

flash memory array; programming continues from where the previous buffer sequence

ended. The host programming system must poll SR.0 to determine when the buffer

program sequence completes. SR.0 cleared indicates that all buffer data has been

transferred to the flash array; SR.0 set indicates that the buffer is not available yet for

the next fill cycle. The host system may check full status for errors at any time, but it is

only necessary on a block basis after BEFP exit. After the buffer fill cycle, no write

cycles should be issued to the device until SR.0 = 0 and the device is ready for the next

buffer fill.

Note: Any spurious writes are ignored after a buffer fill operation and when internal program

is proceeding.

The host programming system continues the BEFP algorithm by providing the next

group of data words to be written to the buffer. Alternatively, it can terminate this

phase by changing the block address to one outside of the current block’s range.

The Program/Verify phase concludes when the programmer writes to a different block

address; data supplied must be 0xFFFF. Upon Program/Verify phase completion, the

device enters the BEFP Exit phase.

8.3.4 BEFP Exit Phase

When SR.7 is set, the device has returned to normal operating conditions. A full status

check should be performed at this time to ensure the entire block programmed

successfully. When exiting the BEFP algorithm with a block address change, the read

mode will not change. After BEFP exit, any valid command can be issued to the device.

8.4 Program Suspend

Issuing the Program Suspend command while programming suspends the

programming operation. This allows data to be accessed from the device other than the

one being programmed. The Program Suspend command can be issued to any device

address. A program operation can be suspended to perform reads only. Additionally, a

program operation that is running during an erase suspend can be suspended to

perform a read operation (see Figure 32, “Program Suspend/Resume Flowchart” on

page 73).

When a programming operation is executing, issuing the Program Suspend command

requests the WSM to suspend the programming algorithm at predetermined points. The

device continues to output Status Register data after the Program Suspend command is

issued. Programming is suspended when Status Register bits SR[7,2] are set. Suspend

latency is specified in Section 15.5, “Program and Erase Characteristics” on page 58.

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To read data from the device, the Read Array command must be issued. Read Array,

Read Status Register, Read Device Identifier, Read CFI, and Program Resume are valid

commands during a program suspend.

During a program suspend, deasserting CE# places the device in standby, reducing

active current. VPP must remain at its programming level, and WP# must remain

unchanged while in program suspend. If RST# is asserted, the device is reset.

8.5 Program Resume

The Resume command instructs the device to continue programming, and

automatically clears Status Register bits SR[7,2]. This command can be written to any

address. If error bits are set, the Status Register should be cleared before issuing the

next instruction. RST# must remain deasserted (see Figure 32, “Program Suspend/

Resume Flowchart” on page 73).

8.6 Program Protection

When VPP = VIL, absolute hardware write protection is provided for all device blocks. If

VPP is at or below VPPLK, programming operations halt and SR.3 is set indicating a VPP-

level error. Block lock registers are not affected by the voltage level on VPP; they may

still be programmed and read, even if VPP is less than VPPLK.

Figure 7: Example VPP Supply Connections

• Factory Programming with VPP = VPPH

• Complete write/Erase Protection when VPP ≤ VPPLK

VCC

VPP

VCC

VPP

• Low Voltage and Factory Programming

• Low-voltage Programming only

• Logic Control of Device Protection

VCC

VPP

• Low Voltage Programming Only

• Full Device Protection Unavailable

VCC

VPP

≤ 10K Ω

VPP

VCC VCC

PROT #

VCC

VPP=VPPH

VCC

P33-65nm

Datasheet Mar 2010

28 Order Number: 320003-09

9.0 Erase Operation

Flash erasing is performed on a block basis. An entire block is erased each time an

erase command sequence is issued, and only one block is erased at a time. When a

block is erased, all bits within that block read as logical ones. The following sections

describe block erase operations in detail.

9.1 Block Erase

Block erase operations are initiated by writing the Block Erase Setup command to the

address of the block to be erased (see Section 6.2, “Device Command Bus Cycles” on

page 18). Next, the Block Erase Confirm command is written to the address of the

block to be erased. If the device is placed in standby (CE# deasserted) during an erase

operation, the device completes the erase operation before entering standby. VPP must

be above VPPLK and the block must be unlocked (see Figure 35, “Block Erase Flowchart”

on page 76).

During a block erase, the WSM executes a sequence of internally-timed events that

conditions, erases, and verifies all bits within the block. Erasing the flash memory array

changes “zeros” to “ones”. Memory array bits that are ones can be changed to zeros

only by programming the block.

The Status Register can be examined for block erase progress and errors by reading

any address. The device remains in the Read Status Register state until another

command is written. SR.0 indicates whether the addressed block is erasing. Status

Status Register bit SR.7 indicates block erase status while the sequence executes.

When the erase operation has finished, Status Register bit SR.5 indicates an erase

failure if set. SR.3 set would indicate that the WSM could not perform the erase

operation because VPP was outside of its acceptable limits. SR.1 set indicates that the

erase operation attempted to erase a locked block, causing the operation to abort.

Before issuing a new command, the Status Register contents should be examined and

then cleared using the Clear Status Register command. Any valid command can follow

once the block erase operation has completed.

9.2 Blank Check

The Blank Check operation determines whether a specified main block is blank (i.e.

completely erased). Without Blank Check, Block Erase would be the only other way to

ensure a block is completely erased. so Blank Check can be used to determine whether

or not a prior erase operation was successful; this includes erase operations that may

have been interrupted by power loss.

Blank check can apply to only one block at a time, and no operations other than Status

erase etc). Suspend and resume operations are not supported during Blank Check, nor

is Blank Check supported during any suspended operations.

Blank Check operations are initiated by writing the Blank Check Setup command to the

block address. Next, the Check Confirm command is issued along with the same block

address. When a successful command sequence is entered, the device automatically

enters the Read Status State. The WSM then reads the entire specified block, and

determines whether any bit in the block is programmed or over-erased.

Datasheet Mar 2010

29 Order Number:320003-09

P33-65nm

The status register can be examined for Blank Check progress and errors by reading

any address within the block being accessed. During a blank check operation, the

Status Register indicates a busy status (SR.7 = 0). Upon completion, the Status

any errors, and then cleared. If the Blank Check operation fails, which means the block

is not completely erased, the Status

9.3 Erase Suspend

Issuing the Erase Suspend command while erasing suspends the block erase operation.

This allows data to be accessed from memory locations other than the one being

erased. The Erase Suspend command can be issued to any device address. A block

erase operation can be suspended to perform a word or buffer program operation, or a

read operation within any block except the block that is erase suspended (see

Figure 37, “Erase Suspend/Resume Flowchart” on page 78).

When a block erase operation is executing, issuing the Erase Suspend command

requests the WSM to suspend the erase algorithm at predetermined points. The device

continues to output Status Register data after the Erase Suspend command is issued.

Block erase is suspended when Status Register bits SR[7,6] are set. Suspend latency is

specified in Section 15.5, “Program and Erase Characteristics” on page 58.

To read data from the device (other than an erase-suspended block), the Read Array

command must be issued. During Erase Suspend, a Program command can be issued

to any block other than the erase-suspended block. Block erase cannot resume until

program operations initiated during erase suspend complete. Read Array, Read Status

during Erase Suspend. Additionally, Clear Status Register, Program, Program Suspend,

Block Lock, Block Unlock, and Block Lock-Down are valid commands during Erase

Suspend.

During an erase suspend, deasserting CE# places the device in standby, reducing

active current. VPP must remain at a valid level, and WP# must remain unchanged

while in erase suspend. If RST# is asserted, the device is reset.

9.4 Erase Resume

The Erase Resume command instructs the device to continue erasing, and

automatically clears SR[7,6]. This command can be written to any address. If status

instruction. RST# must remain deasserted.

9.5 Erase Protection

When VPP = VIL, absolute hardware erase protection is provided for all device blocks. If

VPP is at or below VPPLK, erase operations halt and SR.3 is set indicating a VPP-level

error.

P33-65nm

Datasheet Mar 2010

30 Order Number: 320003-09

10.0 Security

The device features security modes used to protect the information stored in the flash

memory array. The following sections describe each security mode in detail.

10.1 Block Locking

Individual instant block locking is used to protect user code and/or data within the flash

memory array. All blocks power up in a locked state to protect array data from being

altered during power transitions. Any block can be locked or unlocked with no latency.

Locked blocks cannot be programmed or erased; they can only be read.

Software-controlled security is implemented using the Block Lock and Block Unlock

commands. Hardware-controlled security can be implemented using the Block Lock-

Down command along with asserting WP#. Also, VPP data security can be used to

inhibit program and erase operations (see Section 8.6, “Program Protection” on

page 27 and Section 9.5, “Erase Protection” on page 29).

The P33-65nm device also offers four pre-defined areas in the main array that can be

configured as One-Time Programmable (OTP) for the highest level of security. These

include the four 32 KB parameter blocks together as one and the three adjacent 128 KB

main blocks. This is available for top or bottom parameter devices.

10.1.1 Lock Block

To lock a block, issue the Lock Block Setup command. The next command must be the

Lock Block command issued to the desired block’s address (see Section 6.2, “Device

Command Bus Cycles” on page 18 and Figure 36, “Block Lock Operations Flowchart” on

page 77). If the Set Read Configuration Register command is issued after the Block

Lock Setup command, the device configures the RCR instead.

Block lock and unlock operations are not affected by the voltage level on VPP. The block

lock bits may be modified and/or read even if VPP is at or below VPPLK.

10.1.2 Unlock Block

The Unlock Block command is used to unlock blocks (see Section 6.2, “Device

Command Bus Cycles” on page 18). Unlocked blocks can be read, programmed, and

erased. Unlocked blocks return to a locked state when the device is reset or powered

down. If a block is in a lock-down state, WP# must be deasserted before it can be

unlocked (see Figure 8, “Block Locking State Diagram” on page 31).

10.1.3 Lock-Down Block

A locked or unlocked block can be locked-down by writing the Lock-Down Block

command sequence (see Section 6.2, “Device Command Bus Cycles” on page 18).

Blocks in a lock-down state cannot be programmed or erased; they can only be read.

However, unlike locked blocks, their locked state cannot be changed by software

commands alone. A locked-down block can only be unlocked by issuing the Unlock

Block command with WP# deasserted. To return an unlocked block to locked-down

state, a Lock-Down command must be issued prior to changing WP# to VIL. Locked-

down blocks revert to the locked state upon reset or power up the device (see Figure 8,

“Block Locking State Diagram” on page 31).

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P33-65nm

10.1.4 Block Lock Status

The Read Device Identifier command is used to determine a block’s lock status (see

Section 7.3, “Read Device Identifier” on page 22). Data bits DQ[1:0] display the

addressed block’s lock status; DQ0 is the addressed block’s lock bit, while DQ1 is the

addressed block’s lock-down bit.

Note: LK: Lock Setup Command, 60h; LK/D0h: Unlock Command; LK/01h: Lock Command; LK/2Fh: Lock-Down Command.

10.1.5 Block Locking During Suspend

Block lock and unlock changes can be performed during an erase suspend. To change

block locking during an erase operation, first issue the Erase Suspend command.

Monitor the Status Register until SR.7 and SR.6 are set, indicating the device is

suspended and ready to accept another command.

Next, write the desired lock command sequence to a block, which changes the lock

state of that block. After completing block lock or unlock operations, resume the erase

operation using the Erase Resume command.

Note: A Lock Block Setup command followed by any command other than Lock Block, Unlock

Block, or Lock-Down Block produces a command sequence error and set Status

suspend, SR.4 and SR.5 remains set, even after the erase operation is resumed. Unless

the Status Register is cleared using the Clear Status Register command before

resuming the erase operation, possible erase errors may be masked by the command

sequence error.

Figure 8: Block Locking State Diagram

[000 ] [001 ]

[01 1 ]

[11 1 ]

[10 1 ]

[110 ]

[100 ]

LK/

D0h

LK/

01h

LK/

2Fh

LK/2Fh

LK/

D0h

LK/

01h or 2Fh

LK/

D0h

LK/

01h

LK/

2Fh LK/

2Fh

PGM/ERASE

ALLOW ED

PGM/ERASE

PREVENTED

WP# = VIL = 0

WP# = V

= 1

Power-Up/

R eset D efault

Power-Up/

Reset Default

Locked-down

is d is abled b y

WP# = V

V irtu al lock-

down

Any Lock

com m ands WP# toggle

WP# toggle

[010 ]

P33-65nm

Datasheet Mar 2010

32 Order Number: 320003-09

If a block is locked or locked-down during an erase suspend of the same block, the lock

status bits change immediately. However, the erase operation completes when it is

resumed. Block lock operations cannot occur during a program suspend. See Appendix

A, “Write State Machine” on page 81, which shows valid commands during an erase

suspend.

10.2 Selectable OTP Blocks

Blocks from the main array may be optionally configured as OTP. Ask your local

Numonyx representative for details about any of these selectable OTP implementations.

10.3 Password Access

Password Access is a security enhancement offered on the P33-65nm device. This

feature protects information stored in main-array memory blocks by preventing content

alteration or reads until a valid 64-bit password is received. Password Access may be

combined with Non-Volatile Protection and/or Volatile Protection to create a multi-

tiered solution. Please contact your Numonyx Sales for further details concerning

Password Access.

Datasheet Mar 2010

33 Order Number:320003-09

P33-65nm

11.0 Status Register

To read the Status Register, issue the Read Status Register command at any address.

Status Register information is available to which the Read Status Register, Word

Program, or Block Erase command was issued. SRD is automatically made available

following a Word Program, Block Erase, or Block Lock command sequence. Reads from

the device after any of these command sequences outputs the device’s status until

another valid command is written (e.g. the Read Array command).

The Status Register is read using single asynchronous-mode or synchronous burst

mode reads. SRD is output on DQ[7:0], while 0x00 is output on DQ[15:8]. In

asynchronous mode the falling edge of OE#, or CE# (whichever occurs first) updates

and latches the Status Register contents. However, when reading the Status Register in

synchronous burst mode, CE# or ADV# must be toggled to update SRD.

The Device Write Status bit (SR.7) provides overall status of the device. SR[6:1]

present status and error information about the program, erase, suspend, VPP, and

block-locked operations.

Notes:

1. Always clear the Status Register prior to resuming erase operations. It avoids Status Register ambiguity when issuing

commands during Erase Suspend. If a command sequence error occurs during an erase-suspend state, the Status Register

contains the command sequence error status (SR[7,5,4] set). When the erase operation resumes and finishes, possible

errors during the erase operation cannot be detected via the Status Register because it contains the previous error status

2. BEFP mode is only valid in main array.

Table 10: Status Register Description

Status Register (SR) Default Value = 0x80

Device Write

Status

Erase

Suspend

Status

Erase Status Program

Status VPP Status

Program

Suspend

Status

Block-Locked

Status

BEFP

Write

Status

DWS ESS ES PS VPPS PSS BLS BWS

76543210

Bit Name Description

7 Device Write Status (DWS) 0 = Device is busy; program or erase cycle in progress; SR.0 valid.

1 = Device is ready; SR[6:1] are valid.

6 Erase Suspend Status (ESS) 0 = Erase suspend not in effect.

1 = Erase suspend in effect.

5Erase Status

(ES)

Command

Sequence

Error

SR.5 SR.4 Description

4Program

Status (PS)

Program or Erase operation successful.

Program error - operation aborted.

Erase error - operation aborted.

Command sequence error - command aborted.

3 VPP Status (VPPS) 0 = VPP within acceptable limits during program or erase operation.

1 = VPP < VPPLK during program or erase operation.

2Program Suspend Status

(PSS)

0 = Program suspend not in effect.

1 = Program suspend in effect.

1 Block-Locked Status (BLS) 0 = Block not locked during program or erase.

1 = Block locked during program or erase; operation aborted.

0BEFP Write Status (BWS)

After Buffered Enhanced Factory Programming (BEFP) data is loaded into the

buffer:

0 = BEFP complete.

1 = BEFP in-progress.

P33-65nm

Datasheet Mar 2010

34 Order Number: 320003-09

11.0.1 Clear Status Register

The Clear Status Register command clears the status register. It functions independent

of VPP. The WSM sets and clears SR[7,6,2], but it sets bits SR[5:3,1] without clearing

them. The Status Register should be cleared before starting a command sequence to

avoid any ambiguity. A device reset also clears the Status Register.

11.1 Read Configuration Register

The RCR is used to select the read mode (synchronous or asynchronous), and it defines

the synchronous burst characteristics of the device. To modify RCR settings, use the

Configure Read Configuration Register command (see Section 6.2, “Device Command

Bus Cycles” on page 18).

RCR contents can be examined using the Read Device Identifier command, and then

reading from offset 0x05 (see Section 7.3, “Read Device Identifier” on page 22).

The RCR is shown in Tab l e 1 1 . The following sections describe each RCR bit.

Table 11: Read Configuration Register Description (Sheet 1 of 2)

Read Configuration Register (RCR)

Read

Mode Latency Count WAIT

Polarity RES WAIT

Delay

Burst

Seq

CLK

Edge RES RES Burst

Wrap Burst Length

RM LC[3:0] WP RWD BS CE R R BW BL[2:0]

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

Bit Name Description

15 Read Mode (RM) 0 = Synchronous burst-mode read

1 = Asynchronous page-mode read (default)

14:11 Latency Count (LC[3:0])

0010 =Code 2

0011 =Code 3

0100 =Code 4

0101 =Code 5

0110 =Code 6

0111 =Code 7

1000 =Code 8

1001 =Code 9

1010 =Code 10

1011 =Code 11

1100 =Code 12

1101 =Code 13

1110 =Code 14

1111 =Code 15 (default)

(Other bit settings are reserved)

10 WAIT Polarity (WP) 0 =WAIT signal is active low (default)

1 =WAIT signal is active high

9 Reserved (R) Default “0”, Non-changeable

8WAIT Delay (WD) 0 =WAIT deasserted with valid data

1 =WAIT deasserted one data cycle before valid data (default)

7Burst Sequence (BS) Default “0”, Non-changeable

6Clock Edge (CE) 0 = Falling edge

1 = Rising edge (default)

5:4 Reserved (R) Default “0”, Non-changeable

Datasheet Mar 2010

35 Order Number:320003-09

P33-65nm

11.1.1 Read Mode

The Read Mode (RM) bit selects synchronous burst-mode or asynchronous page-mode

operation for the device. When the RM bit is set, asynchronous page mode is selected

(default). When RM is cleared, synchronous burst mode is selected.

11.1.2 Latency Count

The Latency Count (LC) bits tell the device how many clock cycles must elapse from the

rising edge of ADV# (or from the first valid clock edge after ADV# is asserted) until the

first valid data word is driven onto DQ[15:0]. The input clock frequency is used to

determine this value and Figure 9 shows the data output latency for the different

settings of LC. The maximum Latency Count for P33 would be Code 4 based on the Max

clock frequency specification of 52 MHz, and there will be zero WAIT States when

bursting within the word line. Please also refer to Section 11.1.3, “End of Word Line

(EOWL) Considerations” on page 37 for more information on EOWL.

Refer to Table 12, “LC and Frequency Support” on page 36 for Latency Code Settings.

3Burst Wrap (BW) 0 =Wrap; Burst accesses wrap within burst length set by BL[2:0]

1 =No Wrap; Burst accesses do not wrap within burst length (default)

2:0 Burst Length (BL[2:0])

001 =4-word burst

010 =8-word burst

011 =16-word burst

111 =Continuous-word burst (default)

(Other bit settings are reserved)

Table 11: Read Configuration Register Description (Sheet 2 of 2)

P33-65nm

Datasheet Mar 2010

36 Order Number: 320003-09

Figure 9: First-Access Latency Count

Table 12: LC and Frequency Support

Latency Count Settings Frequency Support (MHz)

5 (TSOP); 4 (Easy BGA) ≤ 40

5 (Easy BGA) ≤ 52

Code 1

(Reserved

Code 6

Code 5

Code 4

Code 3

Code 2

Code 0 (Reserved)

Code 7

Valid

Address

Valid

Output

Valid

Out put

Valid

Out put

Valid

Output

Valid

Out put

Valid

Out put

Val id

Out put

Valid

Out put

Valid

Out put

Valid

Out put

Valid

Output

Valid

Out put

Valid

Out put

Val id

Out put

Valid

Out put

Valid

Out put

Valid

Output

Valid

Out put

Valid

Out put

Val id

Out put

Valid

Out put

Valid

Output

Valid

Out put

Valid

Out put

Val id

Out put

Valid

Out put

Valid

Out put

Valid

Out put

Val id

Out put

Valid

Out put

Valid

Out put

Val id

Out put

Valid

Out put

Val id

Out put

Valid

Out put

Valid

Out put

Address [A]

ADV# [V]

DQ15-0 [D/Q]

CLK [C]

DQ15-0 [D/Q]

Datasheet Mar 2010

37 Order Number:320003-09

P33-65nm

11.1.3 End of Word Line (EOWL) Considerations

End of Wordline (EOWL) WAIT states can result when the starting address of the burst

operation is not aligned to a 16-word boundary; that is, A[3:0] of start address does

not equal 0x0. Figure 11, “End of Wordline Timing Diagram” on page 37 illustrates the

end of wordline WAIT state(s), which occur after the first 16-word boundary is reached.

The number of data words and the number of WAIT states is summarized in Table 1 3 ,

“End of Wordline Data and WAIT state Comparison” on page 38for both P33-130nm

and P33-65nm devices.

Figure 10: Example Latency Count Setting Using Code 3

CLK

CE#

ADV#

A[MAX:0]

D[15:0]

Data

Code 3

Address

Data

012

R103

High-Z

A[MAX:1]

Figure 11: End of Wordline Timing Diagram

A[Max:1]

ADV#

OE#

WAIT

DQ[15:0] Data Data Data

EOWL

CLK

Latency Count

Address

P33-65nm

Datasheet Mar 2010

38 Order Number: 320003-09

Table 13: End of Wordline Data and WAIT state Comparison

11.1.4 WAIT Polarity

The WAIT Polarity bit (WP), RCR.10 determines the asserted level (VOH or VOL) of WAIT.

When WP is set, WAIT is asserted high. When WP is cleared, WAIT is asserted low

(default). WAIT changes state on valid clock edges during active bus cycles (CE#

asserted, OE# asserted, RST# deasserted).

11.1.5 WAIT Signal Function

The WAIT signal indicates data valid when the device is operating in synchronous mode

(RCR.15=0). The WAIT signal is only “deasserted” when data is valid on the bus.

When the device is operating in synchronous non-array read mode, such as read

status, read ID, or read query. The WAIT signal is also “deasserted” when data is valid

on the bus.

WAIT behavior during synchronous non-array reads at the end of word line works

correctly only on the first data access.

When the device is operating in asynchronous page mode, asynchronous single word

read mode, and all write operations, WAIT is set to a deasserted state as determined

by RCR.10. See Figure 18, “Asynchronous Single-Word Read (ADV# Latch)” on

page 52, and Figure 19, “Asynchronous Page-Mode Read Timing” on page 52.

Latency Count P33-130nm P33-65nm

Data States WAIT States Data States WAIT States

1 Not Supported Not Supported Not Supported Not Supported

2 4 0 to 1 Not Supported Not Supported

3 4 0 to 2 16 0 to 2

4 4 0 to 3 16 0 to 3

5 4 0 to 4 16 0 to 4

6 4 0 to 5 16 0 to 5

7 4 0 to 6 16 0 to 6

Not Supported Not Supported

16 0 to 7

916 0 to 8

10 16 0 to 9

11 16 0 to 10

12 16 0 to 11

13 16 0 to 12

14 16 0 to 13

15 16 0 to 14

Datasheet Mar 2010

39 Order Number:320003-09

P33-65nm

11.1.6 WAIT Delay

The WAIT Delay (WD) bit controls the WAIT assertion-delay behavior during

synchronous burst reads. WAIT can be asserted either during or one data cycle before

valid data is output on DQ[15:0]. When WD is set, WAIT is deasserted one data cycle

before valid data (default). When WD is cleared, WAIT is deasserted during valid data.

11.1.7 Burst Sequence

The Burst Sequence (BS) bit selects linear-burst sequence (default). Only linear-burst

sequence is supported. Table 1 5 shows the synchronous burst sequence for all burst

lengths, as well as the effect of the Burst Wrap (BW) setting.

Table 14: WAIT Functionality Table

Condition WAIT Notes

CE# = ‘1’, OE# = ‘X’ or CE# = ‘0’, OE# = ‘1’ High-Z 1

CE# =’0’, OE# = ‘0’ Active 1

Synchronous Array Reads Active 1

Synchronous Non-Array Reads Active 1

All Asynchronous Reads Deasserted 1

All Writes High-Z 1,2

Notes:

1. Active: WAIT is asserted until data becomes valid, then deasserts.

2. When OE# = VIH during writes, WAIT = High-Z.

Table 15: Burst Sequence Word Ordering (Sheet 1 of 2)

Start

Addr.

(DEC)

Burst

Wrap

(RCR.3)

Burst Addressing Sequence (DEC)

4-Word Burst

(BL[2:0] = 0b001)

8-Word Burst

(BL[2:0] = 0b010)

16-Word Burst

(BL[2:0] = 0b011)

Continuous Burst

(BL[2:0] = 0b111)

0 0 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4…14-15 0-1-2-3-4-5-6-…

1 0 1-2-3-0 1-2-3-4-5-6-7-0 1-2-3-4-5…15-0 1-2-3-4-5-6-7-…

2 0 2-3-0-1 2-3-4-5-6-7-0-1 2-3-4-5-6…15-0-1 2-3-4-5-6-7-8-…

3 0 3-0-1-2 3-4-5-6-7-0-1-2 3-4-5-6-7…15-0-1-2 3-4-5-6-7-8-9-…

40 4-5-6-7-0-1-2-3 4-5-6-7-8…15-0-1-2-3 4-5-6-7-8-9-10…

50 5-6-7-0-1-2-3-4 5-6-7-8-9…15-0-1-2-3-

45-6-7-8-9-10-11…

60 6-7-0-1-2-3-4-5 6-7-8-9-10…15-0-1-2-

3-4-5 6-7-8-9-10-11-12-…

70 7-0-1-2-3-4-5-6 7-8-9-10…15-0-1-2-3-

4-5-6 7-8-9-10-11-12-13…

…

14 0 14-15-0-1-2…12-13 14-15-16-17-18-19-20-

…

15 0 15-0-1-2-3…13-14 15-16-17-18-19-20-21-

…

P33-65nm

Datasheet Mar 2010

40 Order Number: 320003-09

11.1.8 Clock Edge

The Clock Edge (CE) bit selects either a rising (default) or falling clock edge for CLK.

This clock edge is used at the start of a burst cycle, to output synchronous data, and to

assert/deassert WAIT.

11.1.9 Burst Wrap

The Burst Wrap (BW) bit determines whether 4, 8, or 16-word burst length accesses

wrap within the selected word-length boundaries or cross word-length boundaries.

When BW is set, burst wrapping does not occur (default). When BW is cleared, burst

wrapping occurs.

11.1.10 Burst Length

The Burst Length bits (BL[2:0]) selects the linear burst length for all synchronous burst

reads of the flash memory array. The burst lengths are 4-word, 8-word, 16-word, and

continuous word.

Continuous burst accesses are linear only, and do not wrap within any word length

boundaries (see Table 15, “Burst Sequence Word Ordering” on page 39). When a burst

cycle begins, the device outputs synchronous burst data until it reaches the end of the

“burstable” address space.

11.2 One-Time Programmable (OTP) Registers

The device contains 17 one-time programmable (OTP) registers that can be used to

implement system security measures and/or device identification. Each OTP register

can be individually locked.

The first 128-bit OTP Register is comprised of two 64-bit (8-word) segments. The lower

64-bit segment is pre-programmed at the Numonyx factory with a unique 64-bit

number. The other 64-bit segment, as well as the other sixteen 128-bit OTP Registers,

are blank. Users can program these registers as needed. Once programmed, users can

then lock the OTP Register(s) to prevent additional bit programming (see Figure 12,

“OTP Register Map” on page 41).

0 1 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4…14-15 0-1-2-3-4-5-6-…

1 1 1-2-3-4 1-2-3-4-5-6-7-8 1-2-3-4-5…15-16 1-2-3-4-5-6-7-…

2 1 2-3-4-5 2-3-4-5-6-7-8-9 2-3-4-5-6…16-17 2-3-4-5-6-7-8-…

3 1 3-4-5-6 3-4-5-6-7-8-9-10 3-4-5-6-7…17-18 3-4-5-6-7-8-9-…

41 4-5-6-7-8-9-10-11 4-5-6-7-8…18-19 4-5-6-7-8-9-10…

51 5-6-7-8-9-10-11-12 5-6-7-8-9…19-20 5-6-7-8-9-10-11…

61 6-7-8-9-10-11-12-13 6-7-8-9-10…20-21 6-7-8-9-10-11-12-…

71 7-8-9-10-11-12-13-14 7-8-9-10-11…21-22 7-8-9-10-11-12-13…

…

14 1 14-15-16-17-18…28-29 14-15-16-17-18-19-20-

…

15 1 15-16-17-18-19…29-30 15-16-17-18-19-20-21-

…

Table 15: Burst Sequence Word Ordering (Sheet 2 of 2)

Datasheet Mar 2010

41 Order Number:320003-09

P33-65nm

The OTP Registers contain OTP bits; when programmed, PR bits cannot be erased. Each

OTP Register can be accessed multiple times to program individual bits, as long as the

Each OTP Register has an associated Lock Register bit. When a Lock Register bit is

programmed, the associated OTP Register can only be read; it can no longer be

programmed. Additionally, because the Lock Register bits themselves are OTP, when

programmed, Lock Register bits cannot be erased. Therefore, when a OTP Register is

locked, it cannot be unlocked.

11.2.1 Reading the OTP Registers

The OTP Registers can be read from any address. To read the OTP Register, first issue

the Read Device Identifier command at any address to place the device in the Read

Device Identifier state (see Section 6.2, “Device Command Bus Cycles” on page 18).

Next, perform a read operation using the address offset corresponding to the register

to be read. Table 8, “Device Identifier Information” on page 22 shows the address

offsets of the OTP Registers and Lock Registers. PR data is read 16 bits at a time.

Figure 12: OTP Register Map

0x89

Lock Register 1

15 14 13 12 11 10 9876543210

0x102

0x109

0x8A

0x91

128-bit Protection Register 16

(User-Programmable)

128-bit Protection Register 1

(User-Programmable)

0x88

0x85

64-bit Segment

(User-Programmable)

0x84

0x81

0x80

Lock Register 0

64-bit Segment

(Factory-Programmed)

15 14 13 12 11 10 9876543210

128-Bit Protection Register 0

P33-65nm

Datasheet Mar 2010

42 Order Number: 320003-09

11.2.2 Programming the OTP Registers

To program any of the OTP Registers, first issue the Program OTP Register command at

the parameter’s base address plus the offset to the desired OTP Register (see Section

6.2, “Device Command Bus Cycles” on page 18). Next, write the desired OTP Register

data to the same OTP Register address (see Figure 12, “OTP Register Map” on

page 41).

The device programs the 64-bit and 128-bit user-programmable OTP Register data 16

bits at a time (see Figure 38, “OTP Register Programming Flowchart” on page 79).

Issuing the Program OTP Register command outside of the OTP Register’s address

space causes a program error (SR.4 set). Attempting to program a locked OTP Register

causes a program error (SR.4 set) and a lock error (SR.1 set).

Note: When programming the OTP bits in the OTP registers for a Top Parameter Device,

the following upper address bits must also be driven properly: A[Max:17] driven high

(VIH).

11.2.3 Locking the OTP Registers

Each OTP Register can be locked by programming its respective lock bit in the Lock

issuing the Program Lock Register command, followed by the desired Lock Register

data (see Section 6.2, “Device Command Bus Cycles” on page 18). The physical

addresses of the Lock Registers are 0x80 for register 0 and 0x89 for register 1. These

addresses are used when programming the lock registers (see Table 8, “Device

Identifier Information” on page 22).

Bit 0 of Lock Register 0 is already programmed during the manufacturing process at the

“factory”, locking the lower, pre-programmed 64-bit region of the first 128-bit OTP

region of the first 128-bit OTP Register. When programming Bit 1 of Lock Register 0, all

other bits need to be left as ‘1’ such that the data programmed is 0xFFFD.

Lock Register 1 controls the locking of the upper sixteen 128-bit OTP Registers. Each of

the 16 bits of Lock Register 1 correspond to each of the upper sixteen 128-bit OTP

Registers. Programming a bit in Lock Register 1 locks the corresponding 128-bit OTP

Caution: After being locked, the OTP Registers cannot be unlocked.

Datasheet Mar 2010

43 Order Number:320003-09

P33-65nm

12.0 Power and Reset Specifications

12.1 Power-Up and Power-Down

Power supply sequencing is not required if VPP is connected to VCC or VCCQ. Otherwise

VCC and VCCQ should attain their minimum operating voltage before applying VPP.

Power supply transitions should only occur when RST# is low. This protects the device

from accidental programming or erasure during power transitions.

12.2 Reset Specifications

Asserting RST# during a system reset is important with automated program/erase

devices because systems typically expect to read from flash memory when coming out

of reset. If a CPU reset occurs without a flash memory reset, proper CPU initialization

may not occur. This is because the flash memory may be providing status information,

instead of array data as expected. Connect RST# to the same active low reset signal

used for CPU initialization.

Also, because the device is disabled when RST# is asserted, it ignores its control inputs

during power-up/down. Invalid bus conditions are masked, providing a level of memory

protection.

Table 16: Power and Reset

Num Symbol Parameter Min Max Unit Notes

P1 tPLPH RST# pulse width low 100 - ns 1,2,3,4

P2 tPLRH

RST# low to device reset during erase - 25

µs

1,3,4,7

RST# low to device reset during program - 25 1,3,4,7

P3 tVCCPH VCC Power valid to RST# de-assertion (high) 300 - 1,4,5,6

Notes:

1. These specifications are valid for all device versions (packages and speeds).

2. The device may reset if tPLPH is < tPLPH Min, but this is not guaranteed.

3. Not applicable if RST# is tied to VCC.

4. Sampled, but not 100% tested.

5. When RST# is tied to the VCC supply, device will not be ready until tVCCPH after VCC ≥ VCCMIN.

6. When RST# is tied to the VCCQ supply, device will not be ready until tVCCPH after VCC ≥ VCCMIN.

7. Reset completes within tPLPH if RST# is asserted while no erase or program operation is executing.

P33-65nm

Datasheet Mar 2010

44 Order Number: 320003-09

12.3 Power Supply Decoupling

Flash memory devices require careful power supply de-coupling. Three basic power

supply current considerations are: 1) standby current levels; 2) active current levels;

and 3) transient peaks produced when CE# and OE# are asserted and deasserted.

When the device is accessed, many internal conditions change. Circuits within the

device enable charge-pumps, and internal logic states change at high speed. All of

these internal activities produce transient signals. Transient current magnitudes depend

on the device outputs’ capacitive and inductive loading. Two-line control and correct

de-coupling capacitor selection suppress transient voltage peaks.

Because Numonyx MLC flash memory devices draw their power from VCC, VPP, and

VCCQ, each power connection should have a 0.1 µF ceramic capacitor to ground. High-

frequency, inherently low-inductance capacitors should be placed as close as possible

to package leads.

Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor

should be placed between power and ground close to the devices. The bulk capacitor is

meant to overcome voltage droop caused by PCB trace inductance.

Figure 13: Reset Operation Waveforms

(

A) Reset during

read mode

(B) Reset during

program or block erase

≤

program or block erase

≥

RST# [P]

Abort

Complete

Abort

Complete

(D) VCC Power-up to

RST# high

P1 R5

P2 R5

Datasheet Mar 2010

45 Order Number:320003-09

P33-65nm

13.0 Maximum Ratings and Operating Conditions

13.1 Absolute Maximum Ratings

Warning: Stressing the device beyond the Absolute Maximum Ratings may cause permanent

damage. These are stress ratings only.

13.2 Operating Conditions

Note: Operation beyond the Operating Conditions is not recommended and extended

exposure beyond the Operating Conditions may affect device reliability.

Table 17: Absolute Maximum Ratings

Parameter Maximum Rating Notes

Temperature under bias –40 °C to +85 °C -

Storage temperature –65 °C to +125 °C -

Voltage on any signal (except VCC, VPP and VCCQ) –0.5 V to +4.1 V 1

VPP voltage –0.2 V to +10 V 1,2,3

VCC voltage –0.2 V to +4.1 V 1

VCCQ voltage –0.2 V to +4.1 V 1

Output short circuit current 100 mA 4

Notes:

1. Voltages shown are specified with respect to VSS. Minimum DC voltage is –0.5 V on input/output signals and –0.2 V on

VCC, VCCQ, and VPP. During transitions, this level may undershoot to –2.0 V for periods less than 20 ns. Maximum DC

voltage on VCC is VCC + 0.5 V, which, during transitions, may overshoot to VCC + 2.0 V for periods less than 20 ns.

Maximum DC voltage on input/output signals and VCCQ is VCCQ + 0.5 V, which, during transitions, may overshoot to

VCCQ + 2.0 V for periods less than 20 ns.

2. Maximum DC voltage on VPP may overshoot to +11.5 V for periods less than 20 ns.

3. Program/erase voltage is typically 2.3 V – 3.6 V. 9.0 V can be applied for 80 hours maximum total, to any blocks for

1000 cycles maximum. 9.0 V program/erase voltage may reduce block cycling capability.

4. Output shorted for no more than one second. No more than one output shorted at a time.

Table 18: Operating Conditions

Symbol Parameter Min Max Units Notes

TCOperating Temperature –40 +85 °C 1

VCC VCC Supply Voltage 2.3 3.6

VCCQ I/O Supply Voltage

CMOS inputs 2.3 3.6

TTL inputs 2.4 3.6

VPPL VPP Voltage Supply (Logic Level) 1.5 3.6

VPPH Buffered Enhanced Factory Programming VPP 8.5 9.5

tPPH Maximum VPP Hours VPP = VPPH - 80 Hours

Block

Erase

Cycles

Main and Parameter Blocks VPP = VPPL 100,000 -

CyclesMain Blocks VPP = VPPH 100,000 -

Parameter Blocks VPP = VPPH 100,000 -

Notes:

1. TC = Case Temperature.

2. In typical operation VPP program voltage is VPPL.

P33-65nm

Datasheet Mar 2010

46 Order Number: 320003-09

14.0 Electrical Specifications

14.1 DC Current Characteristics

Table 19: DC Current Characteristics (Sheet 1 of 2)

Sym Parameter

CMOS

Inputs

(VCCQ =

2.3 V - 3.6

TTL Inputs

(VCCQ =

2.4 V - 3.6

V) Unit Test Conditions Notes

Typ Max Typ Max

ILI Input Load Current - ±1 - ±2 µA

VCC = VCC Max

VCCQ = VCCQ Max

VIN = VCCQ or VSS 1,6

ILO

Output

Leakage

Current

DQ[15:0], WAIT - ±1 - ±10 µA

VCC = VCC Max

VCCQ = VCCQ Max

VIN = VCCQ or VSS

ICCS,

ICCD

VCC Standby,

Power-Down

256-Mbit 65 210 65 210

µA

VCC = VCC Max

VCCQ = VCC Max

CE# =VCCQ

RST# = VCCQ (for ICCS)

RST# = VSS (for ICCD)

WP# = VIH

1,2

512-Mbit 130 420 130 420

ICCR

Average

VCC

Read

Current

Asynchronous Single-

Word f = 5 MHz (1 CLK) 26 31 26 31 mA 16-Word

Read

VCC = VCCMax

CE# = VIL

OE# = VIH

Inputs: VIL or

VIH

Page-Mode Read

f = 13 MHz (17 CLK) 12 16 12 16 mA 16-Word

Read

Synchronous Burst

f = 52 MHz, LC=4

19 22 19 22 mA 8-Word Read

16 18 16 18 mA 16-Word

Read

21 24 21 24 mA Continuous

Read

ICCW,

ICCE

VCC Program Current,

VCC Erase Current

35 50 35 50

VPP = VPPL, Pgm/Ers in progress 1,3,5

35 50 35 50 VPP = VPPH, Pgm/Ers in progress 1,3,5

ICCWS,

ICCES

VCC Program

Suspend Current,

VCC Erase

Suspend Current

256-Mbit 65 210 65 210

µA

CE# = VCCQ; suspend in

progress 1,3,4

512-Mbit 70 225 70 225

IPPS,

IPPWS,

IPPES

VPP Standby Current,

VPP Program Suspend Current,

VPP Erase Suspend Current

0.2 5 0.2 5 µA VPP = VPPL, suspend in progress 1,3,7

IPPR VPP Read 2 15 2 15 µA VPP = VPPL 1,3

IPPW VPP Program Current

0.05 0.10 0.05 0.10

VPP = VPPL, program in progress

0.05 0.10 0.05 0.10 VPP = VPPH, program in progress

IPPE VPP Erase Current

0.05 0.10 0.05 0.10

VPP = VPPL, erase in progress

0.05 0.10 0.05 0.10 VPP = VPPH, erase in progress

Datasheet Mar 2010

47 Order Number:320003-09

P33-65nm

14.2 DC Voltage Characteristics

IPPBC VPP Blank Check

0.05 0.10 0.05 0.10

VPP = VPPL, erase in progress

0.05 0.10 0.05 0.10 VPP = VPPH, erase in progress

Notes:

1. All currents are RMS unless noted. Typical values at typical VCC, TC = +25 °C.

2. ICCS is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.

3. Sampled, not 100% tested.

4. ICCES is specified with the device deselected. If device is read while in erase suspend, current is ICCES plus ICCR.

5. ICCW

, ICCE measured over typical or max times specified in Section 15.5, “Program and Erase

Characteristics” on page 58.

6. if VIN > VCC the input load current increases to 10uA max.

7. the IPPS,IPPWS,IPPES Will increase to 200uA when VPP/WP# is at VPPH.

Table 20: DC Voltage Characteristics

Sym Parameter

CMOS Inputs

(VCCQ = 2.3 V – 3.6 V)

TTL Inputs (1)

(VCCQ = 2.4 V – 3.6 V) Unit Test Conditions Notes

Min Max Min Max

VIL Input Low Voltage -0.5 0.4 -0.5 0.6 V

VIH Input High Voltage VCCQ – 0.4 VCCQ + 0.5 2.0 VCCQ + 0.5 V

VOL Output Low Voltage - 0.2 - 0.2 V

VCC = VCC Min

VCCQ = VCCQ Min

IOL = 100 µA

VOH Output High Voltage VCCQ – 0.2 - VCCQ – 0.2 - V

VCC = VCC Min

VCCQ = VCCQ Min

IOH = –100 µA

VPPLK VPP Lock-Out Voltage - 0.4 - 0.4 V 3

VLKO VCC Lock Voltage 1.5 - 1.5 - V -

VLKOQ VCCQ Lock Voltage 0.9 - 0.9 - V -

VPPL

VPP Voltage Supply

(Logic Level) 1.5 3.6 1.5 3.6 V

VPPH

Buffered Enhanced

Factory Programming

VPP

8.5 9.5 8.5 9.5 V

Notes:

1. Synchronous read mode is not supported with TTL inputs.

2. VIL can undershoot to –1.0 V for duration of 2ns or less and VIH can overshoot to VCCQ + 1.0 V for durations of 2ns or

less.

3. VPP ≤ VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges.

Table 19: DC Current Characteristics (Sheet 2 of 2)

Sym Parameter

CMOS

Inputs

(VCCQ =

2.3 V - 3.6

TTL Inputs

(VCCQ =

2.4 V - 3.6

V) Unit Test Conditions Notes

Typ Max Typ Max

P33-65nm

Datasheet Mar 2010

48 Order Number: 320003-09

15.0 AC Characteristics

15.1 AC Test Conditions

Note: AC test inputs are driven at VCCQ for Logic "1" and 0 V for Logic "0." Input/output timing begins/ends at VCCQ/2. Input

rise and fall times (10% to 90%) < 5 ns. Worst-case speed occurs at VCC = VCCMin.

Notes:

1. See the following table for component values.

2. Test configuration component value for worst case speed conditions.

3. CL includes jig capacitance

Figure 14: AC Input/Output Reference Waveform

Figure 15: Transient Equivalent Testing Load Circuit

Table 21: Test Configuration Component Value for Worst Case Speed Conditions

Test Configuration CL (pF)

VCCQ Min Standard Test 30

Figure 16: Clock Input AC Waveform

IO_REF.WMF

Input V

CCQ

/2 V

CCQ

/2 Output

CCQ

Test Points

Device

Under Test Out

CLK [C]

R203R202

R201

Datasheet Mar 2010

49 Order Number:320003-09

P33-65nm

15.2 Capacitance

15.3 AC Read Specifications

Table 22: Capacitance

Symbol Signal Min Typ Max Unit Condition Note

Input

Capacita

nce

Address, Data, CE#,

WE#, OE#, RST#,

CLK, ADV#, WP#

256-Mbit 37 8

Typ temp = 25 °C,

Max temp = 85 °C,

VCC = (0 V - 2.0 V),

VCCQ = (0 V - 3.6 V),

Discrete silicon die

256-Mbit/256Mbit 61416

Output

Capacita

nce

Data, WAIT

256-Mbit 35 7

256-Mbit/256Mbit 61014

Notes:

1. Sampled, not 100% tested.

Table 23: AC Read Specifications - (Sheet 1 of 3)

Num Symbol Parameter Min Max Unit Notes

Asynchronous Specifications

R1 tAVAV Read cycle time

Easy BGA 95 - ns -

TSOP 105 ns -

R2 tAVQV Address to output valid

Easy BGA - 95 ns -

TSOP 105 ns -

R3 tELQV CE# low to output valid

Easy BGA - 95 ns -

TSOP 105 ns -

R4 tGLQV OE# low to output valid - 25 ns 1,2

R5 tPHQV RST# high to output valid - 150 ns 1

R6 tELQX CE# low to output in low-Z 0 - ns 1,3

R7 tGLQX OE# low to output in low-Z 0 - ns 1,2,3

R8 tEHQZ CE# high to output in high-Z - 20 ns

1,3

R9 tGHQZ OE# high to output in high-Z - 15 ns

R10 tOH Output hold from first occurring address, CE#, or OE#

change 0-ns

R11 tEHEL CE# pulse width high 17 - ns

R12 tELTV CE# low to WAIT valid - 17 ns

R13 tEHTZ CE# high to WAIT high-Z - 20 ns 1,3

R15 tGLTV OE# low to WAIT valid - 17 ns 1

R16 tGLTX OE# low to WAIT in low-Z 0 - ns

1,3

R17 tGHTZ OE# high to WAIT in high-Z - 20 ns

Latching Specifications

P33-65nm

Datasheet Mar 2010

50 Order Number: 320003-09

R101 tAVVH Address setup to ADV# high 10 - ns

R102 tELVH CE# low to ADV# high 10 - ns

R103 tVLQV ADV# low to output valid

Easy BGA - 95 ns

TSOP 105 ns

R104 tVLVH ADV# pulse width low 10 - ns

R105 tVHVL ADV# pulse width high 10 - ns

R106 tVHAX Address hold from ADV# high 9 - ns 1,4

R108 tAPA Page address access - 25 ns

R111 tphvh RST# high to ADV# high 30 -ns

Clock Specifications

R200 fCLK CLK frequency

--52MHz

1,3,5,6

TSOP - 40 MHz

R201 tCLK CLK period

- 19.2

-ns

TSOP 25

R202 tCH/CL CLK high/low time

-5

-ns

TSOP 9

R203 tFCLK/RCLK CLK fall/rise time 0.3 3 ns

Table 23: AC Read Specifications - (Sheet 2 of 3)

Num Symbol Parameter Min Max Unit Notes

Datasheet Mar 2010

51 Order Number:320003-09

P33-65nm

Note: WAIT shown deasserted during asynchronous read mode (RCR.10=0, WAIT asserted low).

Synchronous Specifications(5)

R301 tAVCH/L Address setup to CLK 9 - ns

1,6

R302 tVLCH/L ADV# low setup to CLK 9 - ns

R303 tELCH/L CE# low setup to CLK 9 - ns

R304 tCHQV / tCLQV CLK to output valid

--17ns

TSOP - 20 ns

R305 tCHQX Output hold from CLK 3 - ns 1,6

R306 tCHAX Address hold from CLK 10 - ns 1,4,6

R307 tCHTV CLK to WAIT valid

-17ns1,6

TSOP - 20 ns 1,6

R311 tCHVL CLK Valid to ADV# Setup 3 - ns 1

R312 tCHTX WAIT Hold from CLK 3 - ns 1,6

Notes:

1. See Figure 14, “AC Input/Output Reference Waveform” on page 48 for timing measurements and max

allowable input slew rate.

2. OE# may be delayed by up to tELQV – tGLQV after CE#’s falling edge without impact to tELQV.

3. Sampled, not 100% tested.

4. Address hold in synchronous burst read mode is tCHAX or tVHAX, whichever timing specification is satisfied first.

5. Synchronous burst read mode is not supported with TTL level inputs.

6. Applies only to subsequent synchronous reads.

Table 23: AC Read Specifications - (Sheet 3 of 3)

Num Symbol Parameter Min Max Unit Notes

Figure 17: Asynchronous Single-Word Read (ADV# Low)

R17R15

R9R4

R8R3

ddress [A]

ADV#

CE# [E}

OE# [G]

WAIT [T]

Data [D/Q]

RST# [P]

P33-65nm

Datasheet Mar 2010

52 Order Number: 320003-09

Note: WAIT shown deasserted during asynchronous read mode (RCR.10=0, WAIT asserted low)

Note: WAIT shown deasserted during asynchronous read mode (RCR.10=0, WAIT asserted low).

Figure 18: Asynchronous Single-Word Read (ADV# Latch)

R10

R17R15

R9R4

R8R3

R106

R101

R105R105

ddress [A]

A[1:0][A]

ADV#

CE# [E}

OE# [G]

WAIT [T]

Data [D/Q]

Figure 19: Asynchronous Page-Mode Read Timing

Val i d Ad d re s s

0 1 2 F

Q1 Q2 Q3 Q1 6

R108R108R108 R13R6

R9R4

R8R3

R106

R101

R105R105

R10R10R10R10

[Max:4] [A]

A[3 :0 ]

ADV#

CE# [E]

OE# [G]

WAIT [T]

DATA [D/Q]

Datasheet Mar 2010

53 Order Number:320003-09

P33-65nm

Notes:

1. WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either

during or one data cycle before valid data.

2. This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is terminated by

CE# deassertion after the first word in the burst.

Notes:

1. WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either

during or one data cycle before valid data.

2. At the end of Word Line; the delay incurred when a burst access crosses a 16-word boundary and the starting address is

not 4-word boundary aligned. See Section 11.1.3, “End of Word Line (EOWL) Considerations” on

page 37 for more information

Figure 20: Synchronous Single-Word Array or Non-array Read Timing

Figure 21: Continuous Burst Read, showing an Output Delay Timing

R312

R305R304

R17R307R15

R9R7

R303

R102

R104

R106R101

R104

R105R105

R306R301

CLK [C]

d d re ss [ A ]

ADV# [V]

CE# [E]

OE# [G]

WAIT [T]

Data [D/Q]

R305R305R305R305

R304

R312R307R15

R303

R102

R106

R105R105

R101

R304R304R304R306

R302

R301

CLK [C]

ddress [A]

ADV# [V]

CE# [E]

OE# [G]

WAIT [T]

Data [D/Q]

P33-65nm

Datasheet Mar 2010

54 Order Number: 320003-09

Note: WAIT is driven per OE# assertion during synchronous array or non-array read. WAIT asserted during initial latency and

deasserted during valid data (RCR.10=0, WAIT asserted low).

15.4 AC Write Specifications

Figure 22: Synchronous Burst-Mode Four-Word Read Timing

Table 24: AC Write Specifications (Sheet 1 of 2)

Num Symbol Parameter Min Max Unit Notes

W1 tPHWL RST# high recovery to WE# low 150 - ns 1,2,3

W2 tELWL CE# setup to WE# low 0 - ns 1,2,3

W3 tWLWH WE# write pulse width low 50 - ns 1,2,4

W4 tDVWH Data setup to WE# high 50 - ns 1, 2, 12

W5 tAVWH Address setup to WE# high 50 - ns

1,2

W6 tWHEH CE# hold from WE# high 0 - ns

W7 tWHDX Data hold from WE# high 0 - ns

W8 tWHAX Address hold from WE# high 0 - ns

W9 tWHWL WE# pulse width high 20 - ns 1,2,5

W10 tVPWH VPP setup to WE# high 200 - ns

1,2,3,7

W11 tQVVL VPP hold from Status read 0 - ns

W12 tQVBL WP# hold from Status read 0 - ns

1,2,3,7

W13 tBHWH WP# setup to WE# high 200 - ns

W14 tWHGL WE# high to OE# low 0 - ns 1,2,9

W16 tWHQV WE# high to read valid tAVQV + 35 - ns 1,2,3,6,10

Write to Asynchronous Read Specifications

W18 tWHAV WE# high to Address valid 0 - ns 1,2,3,6,8

Q0 Q1 Q2 Q3

R307

R10

R304

R305R304

R17R15

R303

R106

R102

R105R105

R101

R306

R302

R301

CLK [C]

d d re ss [ A ]

ADV# [V]

CE# [E]

OE# [G]

WAIT [T]

Data [D/Q]

Datasheet Mar 2010

55 Order Number:320003-09

P33-65nm

Write to Synchronous Read Specifications

W19 tWHCH/L WE# high to Clock valid 19 - ns

1,2,3,6,10W20 tWHVH WE# high to ADV# high 19 - ns

W28 tWHVL WE# high to ADV# low 7 - ns

Write Specifications with Clock Active

W21 tVHWL ADV# high to WE# low - 20 ns

1,2,3,11

W22 tCHWL Clock high to WE# low - 20 ns

Notes:

1. Write timing characteristics during erase suspend are the same as write-only operations.

2. A write operation can be terminated with either CE# or WE#.

3. Sampled, not 100% tested.

4. Write pulse width low (tWLWH or tELEH) is defined from CE# or WE# low (whichever occurs last) to CE# or WE# high

(whichever occurs first). Hence, tWLWH = tELEH = tWLEH = tELWH.

5. Write pulse width high (tWHWL or tEHEL) is defined from CE# or WE# high (whichever occurs first) to CE# or WE# low

(whichever occurs last). Hence, tWHWL = tEHEL = tWHEL = tEHWL).

6. tWHVH or tWHCH/L must be met when transiting from a write cycle to a synchronous burst read.

7. VPP and WP# should be at a valid level until erase or program success is determined.

8. This specification is only applicable when transiting from a write cycle to an asynchronous read. See spec W19 and W20

for synchronous read.

9. When doing a Read Status operation following any command that alters the Status Register, W14 is 20 ns.

10. Add 10 ns if the write operations results in a RCR or block lock status change, for the subsequent read operation to

reflect this change.

11. These specs are required only when the device is in a synchronous mode and clock is active during address setup phase.

12. This specification must be complied with by customer’s writing timing. The result would be unpredictable if any violation

to this timing specification.

Figure 23: Write-to-Write Timing

Table 24: AC Write Specifications (Sheet 2 of 2)

Num Symbol Parameter Min Max Unit Notes

W7W4W7W4

W3W9 W3W9W3W3

W6W2W6W2

W8W8 W5W5

ddress [A]

CE# [E}

WE# [ W]

OE# [G]

Data [D/Q]

RST# [P]

P33-65nm

Datasheet Mar 2010

56 Order Number: 320003-09

Note: WAIT deasserted during asynchronous read and during write. WAIT High-Z during write per OE# deasserted.

Figure 24: Asynchronous Read-to-Write Timing

Figure 25: Write-to-Asynchronous Read Timing

Q D

W4R10

R17R15

W6W3W3W2

R9R4

R8R3

W8W5

d d ress [A ]

CE# [E}

OE# [G]

WE# [W]

WAIT [T]

Data [D/Q]

RST# [P]

D Q

W7W4

R17R15

W14

W18W3W3

R10W6W2

R1R1W8W5

ddress [A]

ADV# [V]

CE# [E}

WE# [W]

OE# [G]

WAIT [T]

Data [D/Q]

RST# [P]

Datasheet Mar 2010

57 Order Number:320003-09

P33-65nm

Note: WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR 10=0, WAIT asserted low). Clock is

ignored during write operation.

Note: WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR.10=0, WAIT asserted low).

Figure 26: Synchronous Read-to-Write Timing

Figure 27: Write-to-Synchronous Read Timing

Latency Count

Q D D

W7R305

R304

R312R307R16

W15

W22

W21

W9W3

W22

W21

W3W2

R11

R13

R11

R303

R104R104

R106

R102

R105R105

W18

R101

R306

R302

R301

CLK [C]

ddress [A]

ADV# [V]

CE# [E]

OE# [G]

WE#

WAIT [T]

Data [D/Q]

D Q Q

R304

R305R304

R307R15

W20

W19

W18

W3W3

R11

R303

R11

R104

R106

R104

R306W8W5

R302

R301

CLK

ddress [A]

ADV#

CE# [E}

WE# [W]

OE# [G]

WAIT [T]

Data [D/Q]

RST# [P]

P33-65nm

Datasheet Mar 2010

58 Order Number: 320003-09

15.5 Program and Erase Characteristics

Table 25: Program and Erase Specifications

Num Symbol Parameter

VPPL VPPH

Unit Note

Min Typ Max Min Typ Max

Conventional Word Programming

W200 tPROG/W

Program

Time Single word - 270 456 - 270 456 µs 1

Buffered Programming

W250 tPROG

Program

Time

Aligned 32-Wd, BP time

(32 Words) - 310 716 - 310 716

µs 1

Aligned 64-Wd, BP time

(64 Word) - 310 900 - 310 900

Aligned 128-Wd, BP time

(128 Words) - 375 1140 - 375 1140

Aligned 256-Wd, BP time

(256 Words) - 505 1690 - 505 1690

one full buffer (512

Words) - 900 3016 - 900 3016

Buffered Enhanced Factory Programming

W451 tBEFP/B Program

Single byte n/a n/a n/a - 0.5 -

µs

1,2

W452 tBEFP/Setup BEFP Setup n/a n/a n/a 5 - - 1

Erase and Suspend

W500 tERS/PB Erase Time

32-KByte Parameter - 0.8 4.0 - 0.8 4.0

W501 tERS/MB 128-KByte Main - 0.8 4.0 - 0.8 4.0

W600 tSUSP/P

Suspend

Latency

Program suspend - 25 30 - 25 30

µsW601 tSUSP/E Erase suspend - 25 30 - 25 30

W602 tERS/SUSP Erase to Suspend - 500 - - 500 - 1,3

blank check

W702 tBC/MB blank check Main Array Block - 3.2 - - 3.2 - ms

Notes:

1. Typical values measured at TC = +25 °C and nominal voltages. Performance numbers are valid for all speed versions.

Excludes system overhead. Sampled, but not 100% tested.

2. Averaged over entire device.

3. W602 is the typical time between an initial block erase or erase resume command and the a subsequent erase suspend

command. Violating the specification repeatedly during any particular block erase may cause erase failures.

Datasheet Mar 2010

59 Order Number:320003-09

P33-65nm

16.0 Ordering Information

16.1 Discrete Products

Note: The last digit is randomly assigned to cover packing media and/or features or other specific configuration.

Figure 28: Decoder for Discrete Products

Table 26: Valid Combinations for Discrete Products

256-Mbit

RC28F256P33TF*

RC28F256P33BF*

PC28F256P33TF*

PC28F256P33BF*

JS28F256P33TF*

JS28F256P33BF*

F 2 5 P 3 3 B8S 2J 6

Product Line Designator

28F = Numonyx™ Flash Memory

Package Designator

TE = 56 -Lead TSOP, leaded

JS = 56-Lead TSOP, lead-free

RC = 64-Ball Easy BGA, leaded

PC = 64-Ball Easy BGA, lead-free

Device Density

256 = 256-Mbit

Product Family

P33 = Numonyx

Axcell™ Flash Memory (P33)

= 2. 3 – 3. 6 V

CCQ

= 2. 3 – 3. 6 V

Device Details

65 nm lithography

Parameter Location

B = Bottom Parameter

T = Top Parameter

Device Features*

P33-65nm

Datasheet Mar 2010

60 Order Number: 320003-09

16.2 SCSP Products

Notes:

1. The “B” parameter is used for Top(Die1)/Bot(Die2) stack option in the 512-Mbit density.

2. The last digit is randomly assigned to cover packing media and/or features or other specific configuration.

Figure 29: Decoder for SCSP Devices

Product Designator

48F = Numonyx™ Flash Memory Only

Package Designator

RC = 64- Ball Easy BGA, leaded

PC = 64- Ball Easy BGA, lead- free

Device Density

0 = No die

4 = 256-Mbit

Product Family

P =

0 = No die

Device Details

E = 65 nm lithography

Parameter Location

B = Bottom Parameter

T = Top Parameter

F 4 4 P 0 B 08C 4P 0 E0 T

Ballout Descriptor

0 = Discrete ballout

I/ O Voltage, CE# Configuration

X = Individual Chip Enable(s)

T = Virtual Chip Enable(s)

= 2. 3 to 3.6 V

CCQ

= 2. 3 to 3. 6 V

Numonyx

Axcell™ Flash Memory (P33)

Device Features*

Table 27: Valid Combinations for Dual- Die Products

512-Mbit*

RC48F4400P0TB0E*

PC48F4400P0TB0E*

Datasheet Mar 2010

61 Order Number:320003-09

P33-65nm

Appendix A Supplemental Reference Information

A.1 Common Flash Interface

The Common Flash Interface (CFI) is part of an overall specification for multiple

command-set and control-interface descriptions. This appendix describes the database

structure containing the data returned by a read operation after issuing the Read CFI

command (see Section 6.2, “Device Command Bus Cycles” on page 18). System

software can parse this database structure to obtain information about the flash device,

such as block size, density, bus width, and electrical specifications. The system

software will then know which command set(s) to use to properly perform flash writes,

block erases, reads and otherwise control the flash device.

A.1.1 Query Structure Output

The Query database allows system software to obtain information for controlling the

flash device. This section describes the device’s CFI-compliant interface that allows

access to Query data.

Query data are presented on the lowest-order data outputs (DQ7-0) only. The numerical

offset value is the address relative to the maximum bus width supported by the device.

On this family of devices, the Query table device starting address is a 10h, which is a

word address for x16 devices.

For a word-wide (x16) device, the first two Query-structure bytes, ASCII “Q” and “R,”

appear on the low byte at word addresses 10h and 11h. This CFI-compliant device

outputs 00h data on upper bytes. The device outputs ASCII “Q” in the low byte (DQ7-0)

and 00h in the high byte (DQ15-8).

At Query addresses containing two or more bytes of information, the least significant

data byte is presented at the lower address, and the most significant data byte is

presented at the higher address.

In all of the following tables, addresses and data are represented in hexadecimal

notation, so the “h” suffix has been dropped. In addition, since the upper byte of word-

wide devices is always “00h,” the leading “00” has been dropped from the table

notation and only the lower byte value is shown. Any x16 device outputs have 00h on

the upper byte in this mode.

Table 28: Summary of Query Structure Output as a Function of Device and Mode

Device Hex

Offset

Hex

Code

SCII

alue

00010: 51 "Q"

Device Addresses 00011: 52 "R"

00012: 59 "Y"

P33-65nm

Datasheet Mar 2010

62 Order Number: 320003-09

Table 29: Example of Query Structure Output of x16 Devices

A.1.2 Query Structure Overview

The Query command causes the flash component to display the Common Flash Interface (CFI)

Query structure or database. Table 30 summarizes the structure sub-sections and address

locations.

Table 30: Query Structure

Note:

1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a function of

device bus width and mode.

2. BA = Block Address beginning location (i.e., 08000h is block 1’s beginning location when the block size is 32-KWord).

3. Offset 15 defines “P” which points to the Primary Numonyx-specific Extended Query Table.

A.1.3 Read CFI Identification String

The Identification String provides verification that the component supports the

Common Flash Interface specification. It also indicates the specification version and

supported vendor-specified command set(s).

Offset Hex Code Value

AX-A1D15-D0

00010h 0051 “Q”

00011h 0052 “R”

00012h 0059 “Y”

00013h P_IDLO PrVendor ID#

00014h P_IDHI

00015h PLO PrVendor TblAdr

00016h PHI

00017h A_IDLO AltVendor ID#

00018h A_IDHI

... ... ...

00001-Fh Reserved Reserved for vendor-specific information

00010h CFI query identification string Command set ID and vendor data offset

0001Bh System interface information Device timing & voltage information

00027h Device geometry definition Flash device layout

P(3) Primary Numonyx-specific Extended Query Vendor-defined additional information specific

to the Primary Vendor Algorithm

Datasheet Mar 2010

63 Order Number:320003-09

P33-65nm

Table 31: CFI Identification

Offset Length Description Add. Hex

Code Value

10h 3Query-unique ASCII string “QRY”.

10:

11:

12:

--51

--52

--59

“Q”

“R”

“Y”

13h 2Primary Vendor command set and control interface ID code.

16-bit ID code for Vendor-specified algorithms.

13:

14:

--01

--00

15h 2Extended Query Table primay algorithm address. 15:

16:

--0A

--01

17h 2Alernate vendor command set and control interface ID code.

0000h means no second vendor-specified alorithm exists.

17:

18:

--00

19h 2Secondary algorithm Extended Query Table address.

0000h means none exists.

19:

1A:

--00

Table 32: System Interface Information

Offset Length Description Add Hex

Code Value

1Bh 1

VCC logic supply minimum program/erase voltage

bits 0-3 BCD 100 mV

bits 4-7 BCD volts

1B: --23 2.3V

1Ch 1

VCC logic supply maximum program/erase voltage

bits 0-3 BCD 100 mV

bits 4-7 BCD volts

1C: --36 3.6V

1Dh 1

VPP [programming] supply minimum program/erase voltage

bits 0-3 BCD 100 mV

bits 4-7 HEX volts

1D: --85 8.5V

1Eh 1

VPP [programming] supply maximum program/erase voltage

bits 0-3 BCD 100 mV

bits 4-7 HEX volts

1E: --95 9.5V

1Fh 1 “n” such that typical single word program time-out = 2n µ-sec 1F: --09 512µs

20h 1 “n” such that typical full buffer write time-out = 2n µ-sec 20: --0A 1024µs

21h 1 “n” such that typical block erase time-out = 2n m-sec 21: --0A 1s

22h 1 “n” such that typical full chip erase time-out = 2n m-sec 22: --00 NA

23h 1 “n” such that maximum word program time-out = 2n times typical 23: --01 1024µs

24h 1 “n” such that maximum buffer write time-out = 2n times typical 24: --02 4096µs

25h 1 “n” such that maximum block erase time-out = 2n times typical 25: --02 4s

26h 1 “n” such that maximum chip erase time-out = 2n times typical 26: --00 NA

P33-65nm

Datasheet Mar 2010

64 Order Number: 320003-09

A.1.4 Device Geometry Definition

Table 33: Device Geometry Definition

Offset Length Description Add Hex

Code Value

27h 1 “n” such that device size = 2n in number of bytes 27: See Table Below

28h 2

Flash device interface code assignment:

"n" such that n+1 specifies the bit field that represents the flash device width

capabilities as described in the table:

76543210

_ _ _ _ x64 x32 x16 x8 28: --01 x16

15 14 13 12 11 10 9 8

________29:--00

2Ah 2 “n” such that maximum number of bytes in write buffer = 2n2A: --0A 1024

2B: --00

2Ch 1

Number of erase block regions (x) within device:

1. x = 0 means no erase blocking; the device erases in bulk

2. x specifies the number of device regions with one or more contiguous

same-size erase blocks.

3. Symmetrically blocked partitions have one blocking region

2C: See Table Below

2D 4

Erase Block Region 1 Information

bits 0-15 = y, y+1 = number of identical-size erase blocks

bits 16-31 = z, region erase block(s) size are z x 256 bytes

2D:

See Table Below

2E:

2F:

30:

31h 4

Erase Block Region 2 Information

bits 0-15 = y, y+1 = number of identical-size erase blocks

bits 16-31 = z, region erase block(s) size are z x 256 bytes

31:

See Table Below

32:

33:

34:

35h 4 Reserved for future erase block region information

35:

See Table Below

36:

37:

38:

Address

256-Mbit

Address

256-Mbit

Address

256-Mbit

-B -T -B -T -B -T

27: --19 --19 2D: --03 --FE 33: --00 --80

28: --01 --01 2E: --00 --00 34: --02 --00

29: --00 --00 2F: --80 --00 35: --00 --00

2A: --0A --0A 30: --00 --02 36: --00 --00

2B: --00 --00 31: --FE --03 37: --00 --00

2C: --02 --02 32: --00 --00 38: --00 --00

Datasheet Mar 2010

65 Order Number:320003-09

P33-65nm

A.1.5 Numonyx-Specific Extended Query Table

Table 34: Primary Vendor-Specific Extended Query

Discrete

–B –T

–- –- die 1 (B) die 2 (T) die 1 (T) die 2 (B)

112: --00 --00 --40 --00 --40 --00

512-MbitAddress

–B –T

Offs e t(1) Length Description Hex

P = 10Ah (Optional flash features and com m ands) Add. Code Value

(P+0)h 3 Primary extended query table 10A --50 "P"

(P+1)h Unique ASCII string “PRI“ 10B: --52 "R"

(P+2)h 10C: --49 "I"

(P+3)h 1 Major version number, ASCII 10D: --31 "1"

(P+4)h 1 Minor version number, ASCII 10E: --35 "5"

(P+5)h 4 Optional feature and command support (1=yes, 0=no) 10F: --E6

(P+6)h bits 10–31 are reserved; undefined b its are “0.” If bit 31 is 110: --09

(P+7)h “1” then another 31 bit field of Optional features follows at 111: --00

(P+8)h the end of the bit–30 field. 112: --40

bit 0 Chip erase supported bit 0 = 0 No

bit 1 Suspend erase supported bit 1 = 1 Yes

bit 2 Suspend program supported bit 2 = 1 Yes

bit 3 Legacy lock/unlock supported bit 3 = 0 No

bit 4 Queued erase supported bit 4 = 0 No

bit 5 Instant individual block locking supported bit 5 = 1 Yes

bit 6 Protection bits supported bit 6 = 1 Yes

bit 7 Pagemode read supported bit 7 = 1 Yes

bit 8 Synchronous read supported bit 8 = 1 Yes

bit 9 Simultaneous operations supported bit 9 = 0 No

bit 10 Extended Flash Array Blocks supported bit 10 = 0 No

bit 11 Permanent Block Locking of up to Full Main Array supported bit 11 = 1 Yes

bit 12 Permanent Block Locking of up to Partial Main Array supported bit 12 = 0 No

bit 30 CFI Link(s) to follow bit 30 = 1 Yes

bit 31 Another "Optional Features" field to follow bit 31 = 0 No

(P+9)h 1 113: --01

bit 0 Program supported after erase suspend bit 0 = 1 Yes

(P+A)h 2 Block status register mask 114: --03

(P+B)h bits 2–15 are Reserved; undefined b its are “0” 115: --00

bit 0 Block Lock-Bit Status register active bit 0 = 1 Yes

bit 1 Block Lock-Dow n Bit Status active bit 1 = 1 Yes

bit 4 EFA Block Lock-Bit Status register active bit 4 = 0 No

bit 5 EFA Block Lock-Dow n Bit Status active bit 5 = 0 No

(P+C)h 1 116: --18 1.8V

(P+D)h 1 117: --90 9.0V

VCC logic supply highest performance program/erase voltage

bits 0–3 BCD value in 100 mV

bits 4–7 BCD value in volts

Supported functions after suspend: read Array, Status, Query

Other supported operations are:

bits 1–7 reserved; undefined bits are “0”

VPP optimum program/erase supply voltage

bits 0–3 BCD value in 100 mV

bits 4–7 HEX value in volts

P33-65nm

Datasheet Mar 2010

66 Order Number: 320003-09

Table 35: OTP Register Information

Offset(1) Length Description Hex

P = 10Ah (Optional flash features and commands) Add. Code Value

(P+E)h 1 118: --02 2

(P+F)h 4 Protection Field 1: Protection Description 119: --80 80h

(P+10)h This f ield describes user-available One Time Programmable 11A: --00 00h

(P+11)h (OTP) Protection register bytes. Some are pre-programmed 11B: --03 8 byte

(P+12)h 11C: --03 8 byte

(P+13)h 10 Protection Field 2: Protection Description 11D: --89 89h

(P+14)h 11E: --00 00h

(P+15)h 11F: --00 00h

(P+16)h 120: --00 00h

(P+17)h 121: --00 0

(P+18)h bits 40–47 = “n” such that n = factory pgm'd groups (high byte) 122: --00 0

(P+19)h 123: --00 0

(P+1A)h 124: --10 16

(P+1B)h 125: --00 0

(P+1C)h 126: --04 16

bits 48–55 = “n” \ 2n = factory programmable bytes/group

bits 56–63 = “n” such that n = user pgm'd groups (low byte)

bits 64–71 = “n” such that n = user pgm'd groups (high byte)

bits 72–79 = “n” such that 2n = user programmable bytes/group

w ith device-unique serial numbers. Others are user

programmable. Bits 0–15 point to the Protection register Lock

byte, the section’s f irst byte. The f ollow ing bytes are factory

pre-programmed and user-programmable.

bits 0–7 = Lock/bytes Jedec-plane physical low address

bits 8–15 = Lock/bytes Jedec-plane physical high address

bits 16–23 = “n” such that 2n = factory pre-programmed bytes

bits 24–31 = “n” such that 2n = user programmable bytes

Bits 0–31 point to the Protection register physical Lock-w ord

address in the Jedec-plane.

Follow ing bytes are factory or user-programmable.

bits 32–39 = “n” such that n = factory pgm'd groups (low byte)

Number of Protection register f ields in JEDEC ID space.

“00h,” indicates that 256 protection fields are available

Datasheet Mar 2010

67 Order Number:320003-09

P33-65nm

Table 36: Partition and Erase Block Region Information

Figure 30: Burst Read Information

Offs e t(1) Length Description Hex

P = 10Ah (Optional flash features and com m ands) Add. Code Value

(P+1D)h 1 127: --05 32 byte

(P+1E)h 1 128: --04 4

(P+1F)h 1 129: --01 4

(P+20)h 1 Synchronous mode read capability configuration 2 12A: --02 8

(P+21)h 1 Synchronous mode read capability configuration 3 12B: --03 16

(P+22)h 1 Synchronous mode read capability configuration 4 12C: --07 Cont

Page Mode Read capability

bits 0–7 = “n” such that 2n HEX value represents the number of

read-page bytes. See offset 28h for device w ord w idth to

determine page-mode data output w idth. 00h indicates no

read page buf fer.

Synchronous mode read capability configuration 1

Bits 3–7 = Reserved

Bits 0–2 “n” such that 2n+1 HEX value represents the maximum number of

continuous synchronous reads w hen the device is conf igured f or its maximum

w ord w idth. A value of 07h indicates that the device is capable of continuous

linear bursts that w ill output data until the internal burst counter reaches the end

of the device’s burstable address space. This f ield’s 3-bit value can be w ritten

directly to the Read Conf iguration Register bits 0–2 if the device is configured

for its maximum w ord w idth. See off set 28h for w ord w idth to determine the

burst data output w idth.

Number of synchronous mode read configuration fields that f ollow . 00h

indicates no burst capability.

Offset(1) Se e table below

P = 10Ah Description Address

Bottom Top (Optional flash features and commands) Len Bot Top

(P+23)h (P+23)h

1 12D: 12D:Number of device hardw are-partition regions w ithin the device.

x = 0: a single hardw are partition device (no f ields follow ).

x specifies the number of device partition regions containing

one or more contiguous erase block regions.

P33-65nm

Datasheet Mar 2010

68 Order Number: 320003-09

Table 37: Partition Region 1 Information (Sheet 1 of 2)

Offset(1) See table below

P = 10Ah Description Address

Bottom Top (Optional flash features and commands) Len Bot Top

(P+24)h (P+24)h Data size of this Parition Region Information field 2 12E: 12E

(P+25)h (P+25)h (# addressable locations, including this field) 12F 12F

(P+26)h (P+26)h Number of identical partitions w ithin the partition region 2 130: 130:

(P+27)h (P+27)h 131: 131:

(P+28)h (P+28)h 1 132: 132:

(P+29)h (P+29)h 1 133: 133:

(P+2A)h (P+2A)h 1 134: 134:

(P+2B)h (P+2B)h 1 135: 135:Types of erase block regions in this Partition Region.

x = 0 = no erase blocking; the Partition Region erases in bulk

x = number of erase block regions w / contiguous same-size

erase blocks. Symmetrically blocked partitions have one

blocking region. Partition size = (Type 1 blocks)x(Type 1

block sizes) + (Type 2 blocks)x(Type 2 block sizes) +…+

(Type n blocks)x(Type n block sizes)

Number of program or erase operations allow ed in a partition

bits 0–3 = number of simultaneous Program operations

bits 4–7 = number of simultaneous Erase operations

Simultaneous program or erase operations allow ed in other partitions w hile a

partition in this region is in Program mode

bits 0–3 = number of simultaneous Program operations

bits 4–7 = number of simultaneous Erase operations

Simultaneous program or erase operations allow ed in other partitions w hile a

partition in this region is in Erase mode

bits 0–3 = number of simultaneous Program operations

bits 4–7 = number of simultaneous Erase operations

Datasheet Mar 2010

69 Order Number:320003-09

P33-65nm

Table 38: Partition Region 1 Information (Sheet 2 of 2)

Offset(1) See table below

P = 10Ah Description Address

Bottom Top (Optional flash features and commands) Len Bot Top

(P+2C)h (P+2C)h Partition Region 1 Erase Block Type 1 Information 4 136: 136:

(P+2D)h (P+2D)h bits 0–15 = y, y+1 = # identical-size erase blks in a partition 137: 137:

(P+2E)h (P+2E)h bits 16–31 = z, region erase block(s) size are z x 256 bytes 138: 138:

(P+2F)h (P+2F)h 139: 139:

(P+30)h (P+30)h Partition 1 (Erase Block Type 1) 2 13A: 13A:

(P+31)h (P+31)h Block erase cycles x 1000 13B: 13B:

(P+32)h (P+32)h 1 13C: 13C:

(P+33)h (P+33)h 1 13D: 13D:

Partition Region 1 (Erase Block Type 1) Programming Region Information 6

(P+34)h (P+34)h bits 0–7 = x, 2^x = Programming Region aligned size (bytes)13E:

13E:

(P+35)h (P+35)h bits 8–14 = Reserved; bit 15 = Legacy flash operation (ignore 0:7) 13F: 13F:

(P+36)h (P+36)h bits 16–23 = y = Control Mode valid size in bytes 140: 140:

(P+37)h (P+37)h bits 24-31 = Reserved 141: 141:

(P+38)h (P+38)h bits 32-39 = z = Control Mode invalid size in bytes 142: 142:

(P+39)h (P+39)h bits 40-46 = Reserved; bit 47 = Legacy flash operation (ignore 23:16 & 39:32) 143: 143:

(P+3A)h (P+3A)h Partition Region 1 Erase Block Type 2 Information 4 144: 144:

(P+3B)h (P+3B)h bits 0–15 = y, y+1 = # identical-size erase blks in a partition 145: 145:

(P+3C)h (P+3C)h bits 16–31 = z, region erase block(s) size are z x 256 bytes 146: 146:

(P+3D)h (P+3D)h 147: 147:

(P+3E)h (P+3E)h Partition 1 (Erase Block Type 2) 2 148: 148:

(P+3F)h (P+3F)h Block erase cycles x 1000 149: 149:

(P+40)h (P+40)h 1 14A: 14A:

(P+41)h (P+41)h 1 14B: 14B:

Partition Region 1 (Erase Block Type 2) Programming Region Information 6

(P+42)h (P+42)h bits 0–7 = x, 2^x = Programming Region aligned size (bytes)14C:

14C:

(P+43)h (P+43)h bits 8–14 = Reserved; bit 15 = Legacy flash operation (ignore 0:7) 14D: 14D:

(P+44)h (P+44)h bits 16–23 = y = Control Mode valid size in bytes 14E: 14E:

(P+45)h (P+45)h bits 24-31 = Reserved 14F: 14F:

(P+46)h (P+46)h bits 32-39 = z = Control Mode invalid size in bytes 150: 150:

(P+47)h (P+47)h bits 40-46 = Reserved; bit 47 = Legacy flash operation (ignore 23:16 & 39:32) 151: 151:

Partition 1 (erase block Type 2) bits per cell; internal EDAC

bits 0–3 = bits per cell in erase region

bit 4 = internal EDAC used (1=yes, 0=no)

bits 5–7 = reserve for f uture use

Partition 1 (erase block Type 2) page mode and synchronous mode capabilities

defined in Table 10.

bit 0 = page-mode host reads permitted (1=yes, 0=no)

bit 1 = synchronous host reads permitted (1=yes, 0=no)

bit 2 = synchronous host w rites permitte

Partition 1 (erase block Type 1) page mode and synchronous mode capabilities

defined in Table 10.

bit 0 = page-mode host reads permitted (1=yes, 0=no)

bit 1 = synchronous host reads permitted (1=yes, 0=no)

bit 2 = synchronous host w rites permitted (1=yes, 0=no)

bits 3–7 = reserved for future use

Partition 1 (erase block Type 1) bits per cell; internal EDAC

bits 0–3 = bits per cell in erase region

bit 4 = internal EDAC used (1=yes, 0=no)

bits 5–7 = reserve for f uture use

P33-65nm

Datasheet Mar 2010

70 Order Number: 320003-09

Table 39: Partition and Erase Block Region Information

Address

–B –T

12D

--01 --01

12E: --24 --24

12F: --00 --00

130: --01 --01

131: --00 --00

132: --11 --11

133: --00 --00

134: --00 --00

135: --02 --02

136: --03 --FE

137: --00 --00

138: --80 --00

139: --00 --02

13A --64 --64

13B

--00 --00

13C

--02 --02

13D

--03 --03

13E: --00 --00

13F: --80 --80

140: --00 --00

141: --00 --00

142: --00 --00

143: --80 --80

144: --FE --03

145: --00 --00

146: --00 --80

147: --02 --00

148: --64 --64

149: --00 --00

14A --02 --02

14B

--03 --03

14C

--00 --00

14D

--80 --80

14E: --00 --00

14F: --00 --00

150: --00 --00

151: --80 --80

256-Mbit

Datasheet Mar 2010

71 Order Number:320003-09

P33-65nm

Table 40: CFI Link Information

Length Description Hex

(Optional flash features and commands) Add. Code Value

4 CFI Link Field bit definitions 152:

Bits 0–9 = Address offset (w ithin 32Mbit segment) of ref erenced CFI table 153:

Bits 10–27 = nth 32Mbit segment of referenced CFI table 154:

Bits 28–30 = Memory Type 155:

Bit 31 = Another CFI Link f ield immediately f ollow s

1 CFI Link Field Quantity Subfield definitions 156:

Bits 0–3 = Quantity field (n such that n+1 equals quantity)

Bit 4 = Table & Die relative location

Bit 5 = Link Field & Table relative location

Bits 6–7 = Reserved

See table below

Dis c r ete

–B –T

–- –- die 1 (B) die 2 (T) die 1 (T) die 2 (B)

152: --FF --FF --10 --FF --10 --FF

153: --FF --FF --20 --FF --20 --FF

154: --FF --FF --00 --FF --00 --FF

155: --FF --FF --00 --FF --00 --FF

156: --FF --FF --10 --FF --10 --FF

Address 512-Mbit

–B –T

P33-65nm

Datasheet Mar 2010

72 Order Number: 320003-09

A.2 Flowcharts

Figure 31: Word Program Flowchart

Start

Data Cycle

- Address = location to program

- Data = Data to program

Yes

D7 = '1'

End

No Suspend

Yes Errors

Yes

Error-Handler

User Defined Routine

Read Status Register

- Toggle CE# or OE# to update Status Register

- See Status Register Flowchart

Program Suspend

See Suspend/

Resume Flowchart

Command Cycle

-Issue Program Command

- Address = location to program

- Data = 0x40

Check Ready Status

- Read Status Register Command not required

- Perform read operation

- Read Ready Status on signal D7

Datasheet Mar 2010

73 Order Number:320003-09

P33-65nm

Figure 32: Program Suspend/Resume Flowchart

Read Status

SR.7 =

SR.2 =

Read Array

Data

Program

Completed

Done

Reading

Program

Resumed

Read Array

Data

Yes

PROGRAM SUSPEND / RESUME PROCEDURE

Write Program

Resume

Dat a = D0 h

A ddr = S uspended bl ock ( BA)

Bus

Operation Command Comments

Write Program

Suspend

Dat a = B0h

A ddr = X

Standby

Check SR.7

1 = WSM ready

0 = WSM busy

Standby

Check SR.2

1 = P rogram suspended

0 = Prog ram compl eted

Write Read

Array

Dat a = FF h

Addr = Block address to read (BA)

Read Read array data from block other than

the one being programmed

Read

Status register data

Initiate a read cycle to update Status

Addr = Suspended block (BA)

PGM_SUS.WMF

Start

Write B0h

Any Address

Program Suspend

Read Status

Writ e 70 h

Write FFh

Any Address

Read Array

Write D0h

Any Address

Program Resume

Write FFh

Read Array

Write Read

Status

Dat a = 70h

Addr = Block to suspend (BA)

Write 70h

Any Address

Read Status

Any Address

P33-65nm

Datasheet Mar 2010

74 Order Number: 320003-09

Figure 33: Buffer Program Flowchart

Start

Get Next

Target Address

Issue Write to Buffer

Command E8h and

Block Address

Read Status Register

Block Address

(note 7)

Is WSM Ready?

SR. 7 =

1 = Yes

Device

Supports Buffer

Writes?

Set Timeout or

Loop Counter

Timeout

or Count

Expired?

Write Confirm D0h

and Block Address

Another Buffered

Programming?

Yes

Write Buffer Data

Start Address

X = 0

Yes

0=No

Yes

Use Single Word

Programming

Abort Bufferred

Program?

X = N?

Write Buffer Data

Block Address

X = X + 1

Write to another

Block Address

Buffered Program

Aborted

YesYes

Write Word Count

Block Address

Notes:

1. Word count values on DQ

-DQ

are loaded into the Count

2. The device outputs the status register when read .

3. Write Buffer contents will be programmed at the device start

address or destination flash address .

4. Align the start address on a Write Buffer boundary for maximum

programming performance (i.e., A

-A

of the start address =0).

5. The device aborts the Buffered Program command if the

current address is outside the original block address .

6. The Status register indicates an “improper command

Sequence” if the Buffered Program command is aborted. Follow

this with a Clear Status Register command .

7. The device default state is to output SR data after the Buffered

Programming Setup Command (E8h).CE# and OE low drive the

device to update Status Register . It is not allowed to issue 70h to

read SR data after E8h command otherwise 70h would be

counted as Word count.

8. Full status check can be done after all erase and write

sequences complete . Write FFh after the last operation to reset

the device to read array mode.

Bus

Operation

Standby

Read

Command

Write Write to

Buffer

Read

(Note 7)

Standby

Comments

Check SR.7

1 = WSM Ready

0 = WSM Busy

Status register Data

CE # and OE# low updates SR

Addr = Block Address

Data = E8H

Addr = Block Address

SR. 7 = Valid

Addr = Block Address

Check SR.7

1 = Device WSM is Busy

0 = Device WSM is Ready

Write Program

Confirm

Data = D0H

Addr = Block Address

Write

( Notes 1, 2)

Data = N- 1 = Word Count

N = 0 cor responds to count = 1

Addr = Block Address

Write

( Notes 3, 4)

Data = Write Buffer Data

Addr = Start Address

Write

( Notes 5, 6)

Data = Write Buffer Data

Addr = Block Address

Suspend

Program

Loop

Read Status Register

SR. 7 =?

Full Status

Check if Desired

Program Complete

Suspend

Program

Yes

Datasheet Mar 2010

75 Order Number:320003-09

P33-65nm

Figure 34: BEFP Flowchart

SR Error Handler

(User-Defined)

BEFP

Setup

Delay

Yes (SR.7=0)

Issue BEFP Setup Cmd

(Data = 0x80)

Issue BEFP Confirm Cmd

(Data = 00D0h)

Read Status

No (SR.7=1)

Exit

Start

Yes (SR.0=0)

No (SR.0=1)

Write 0xFFFFh outside Block

No (SR.0=1)

Yes (SR.0=0)

Yes

Yes (SR.7=1)

No (SR.7=0)

Finish

Yes

BEFP Setup

Done ?

Full Status

errors

Read Status

Buffer Ready ?

Write Data Word to Buffer

Buffer Full ?

Read Status

Program

Done ?

Program

More Data ?

Program/Verify PhaseSetup Phase Exit Phase

A B

BEFP Exited ?

Read Status

P33-65nm

Datasheet Mar 2010

76 Order Number: 320003-09

Figure 35: Block Erase Flowchart

Start

Confirm Cycle

- Issue Confirm command

- Address = Block to be erased

- Data = Erase confirm (0xD0)

Errors

Yes

Error-Handler

User Defined Routine

Check Ready Status

- Read Status Register Command not required

- Perform read operation

- Read Ready Status on signal SR.7

Command Cycle

- Issue Erase command

- Address = Block to be erased

- Data = 0x20

Yes

SR.7 = '1'

End

No Suspend

Yes

Read Status Register

- Toggle CE# or OE# to update Status Register

- See Status Register Flowchart

Erase Suspend

See Suspend/

Resume Flowchart

Datasheet Mar 2010

77 Order Number:320003-09

P33-65nm

Figure 36: Block Lock Operations Flowchart

Optional

Start

Write 60 h

Block Address

Write 90 h

Read Block Lock

Status

Locking

Change ?

Lock Change

Complete

Write 01 ,D0,2Fh

Block Address

Write FFh

Any Address

Yes

Write

( Optional)

Read

( Optional)

Standby

( Optional)

Write

Lock

Setup

Lock,

Unlock, or

Lockdown

Confirm

Read ID

Plane

Block Lock

Status

Read

Array

Data = 60h

Addr = Block to lock/unlock/lock-down (BA)

Data = 01h (Lock block)

D0h (Unlock block)

2Fh (Lockdown block)

Addr = Block to lock/unlock/lock-down (BA)

Data = 90h

Addr = Block address offset +2 ( BA+2)

Block Lock status data

Addr = Block address offset +2 ( BA+2)

Confirm locking change on DQ

, DQ

(See Block Locking State Transitions Table

for valid combinations.)

Data = FFh

Addr = Block address (BA)

Bus

Operation Command Comments

LOCKING OPERATIONS PROCEDURE

LOCK_OP.WMF

Lock Confirm

Lock Setup

Read ID Plane

Read Ar ray

P33-65nm

Datasheet Mar 2010

78 Order Number: 320003-09

Figure 37: Erase Suspend/Resume Flowchart

Erase

Completed

Read Array

Data

Read

Program

Loop

Read Array

Data

Yes

Start

Read Status

SR.7 =

SR.6 =

Erase

Resumed

Read or

Program ?

Done?

Write

Standby

Write

Erase

Suspend

Read Array

or Program

Program

Resume

Data = B0h

Addr = Same partition address as

above

Data = FFh or 40 h

Addr = Block to program or read

Check SR.7

1 = WSM ready

0 = WSM busy

Check SR.6

1 = Erase suspended

0 = Erase completed

Data = D0h

Addr = Any address

Bus

Operation Command Comments

Read

Status register data. Toggle CE# or

OE # to update Status register

Addr =X

Read or

Write

Read array or program data from/to

block other than the one being erased

ERASE SUSPEND / RESUME PROCEDURE

ER AS _SU S .WM F

Write B0h

Any Address

Erase Suspend

Write 70h

Any Address

Read Status

Write D0h

Any Address

Erase Resume

Write 70h

Any Address

Read Status

Write FFh

Any Addres

Read Arr ay

Write Read

Status

Data = 70h

Addr = Any device address

Datasheet Mar 2010

79 Order Number:320003-09

P33-65nm

Figure 38: OTP Register Programming Flowchart

Start

Confirm Data

- Write OTP Address and Data

Yes

SR.7 = '1'

End

Read Status Register

- Toggle CE# or OE# to update Status Register

- See Status Register Flowchart

OTP Program Setup

- Write 0xC0

- OTP Address

Check Ready Status

- Read Status Register Command not required

- Perform read operation

- Read Ready Status on signal SR.7

P33-65nm

Datasheet Mar 2010

80 Order Number: 320003-09

Figure 39: Status Register Flowchart

Start

SR7 = '1'

SR2 = '1'

SR4 = '1'

SR3 = '1'

SR1 = '1'

Yes

SR6 = '1' Yes

SR5 = '1'

Program Suspend

See Suspend/Resume Flowchart

Erase Suspend

See Suspend/Resume Flowchart

Error

Command Sequence

Yes

Error

Erase Failure

Error

Program Failure

Error

PEN/PP

< V

PENLK/PPLK

Error

Block Locked

-Set by WSM

- Reset by user

- See Clear Status

- Set/Reset

by WSM

SR4 = '1' Yes

End

Command Cycle

-Issue Status Register Command

- Address = any device address

- Data = 0x70

Data Cycle

-Read Status Register SR[7:0]

Datasheet Mar 2010

81 Order Number:320003-09

P33-65nm

A.3 Write State Machine

Show here are the command state transitions (Next State Table) based on incoming

commands. Only one partition can be actively programming or erasing at a time. Each

partition stays in its last read state (Read Array, Read Device ID, Read CFI or Read

Status Register) until a new command changes it. The next WSM state does not depend

on the partition’s output state.

Note: IS refers to Illegal State in the Next State Tables.

Table 41: Next State Table for P3x-65nm (Sheet 1 of 3)

Command Input and Resulting Chip Next State(1)

Current Chip State

Array Read (3)

Word Pgm Setup (4,9)

BP Setup (8)

EFI Command Setup

Erase Setup (4,9)

BEFP Setup (6)

Confirm (7)

Pgm/Ers Suspend

Read Status

Clear SR (5)

Read ID/Query

Lock/RCR/ECR Setup

Blank Check

OTP Setup

Lock Blk Confirm (7)

Lock-down Blk Confirm (7)

Write ECR/RCR Confirm (7)

Block Address Change

Other Commands (2)

WSM Operation Completes

(FFh) (40h) (E8h) (EBh) (20h) (80h) (D0h) (B0) (70h) (50h) (90h,

98h) (60h) (BCh) (C0h) (01h) (2Fh) (03h,

04h) other

Ready

Program

Setup

BP Setup

EFI

Setup

Erase

Setup

BEFP

Setup

Ready

Lock/RCR

/ECR Setup

Setup

OTP

Setup

Ready N/A

Ready

N/A

Lock/RCR/ECR Setup Ready (Lock

Error [Botch])

Ready (Unlock

Block)

Ready (Lock Error [Botch])

Ready

(Lock

Error

[Botc

h])

Ready

(Lock

Block

)

Ready

(Lock

down

Block

)

Ready

(Set

CR)

N/A Ready (Lock Error

[Botch]) N/A

OTP

Setup OTP Busy OTP Busy N/A OTP Busy N/A

Busy OTP

Busy

IS in

OTP

Busy

OTP Busy IS in OTP

Busy OTP Busy Illegal State in OTP

Busy OTP Busy N/A OTP Busy Ready

IS in OTP Busy OTP Busy OTP Busy

Word

Program

Setup Word Program Busy N/A Pgm Busy N/A

Busy Pgm

Busy

IS in

Pgm

Busy

Pgm Busy IS in Pgm

Busy

Pgm

Busy

Pgm

Susp Word Pgm Busy IS in Word Pgm

Busy Word Pgm Busy N/A Pgm Busy Ready

IS in Pgm Busy Word Pgm Busy

Suspend Pgm

Susp

IS in

Pgm

Susp

Pgm

Suspend

IS in Pgm

Susp

Pgm

Busy Pgm Susp

Pgm

Susp

(Er

bits

clear)

Word

Pgm

Susp

Illegal State in Pgm

Suspend

Word Program

Suspend N/A Word Pgm Susp

N/A

IS in Pgm

Suspend Word Program Suspend

EFI

EFI Setup Sub-function Setup

N/A

Sub-function

Setup Sub-op-code Load 1

Sub-op-code

Load 1 Sub-function Load 2 if word count >0, else Sub-function confirm

Sub-function

Load 2 Sub-function Confirm if data load in program buffer is complete, ELSE Sub-function Load 2

Sub-function

Confirm Ready (Error [Botch]) S-fn

Busy Ready (Error [Botch])

Sub-function

Busy

S-fn

Busy

IS in

S-fn

Busy

S-fn Busy Illegal State

in S-fn Busy

S-fn

Busy

S-fn

Susp S-fn Busy IS in S-fn Busy S-fn Busy S-fn Busy

Ready

IS in Sub-

function Busy Sub-function Busy

Sub-function

Susp

S-fn

Susp

IS in

S-fn

Susp

Sub-function Illegal State

in S-fn Busy

S-fn

Busy

S-fn

Suspend

S-fn

Susp

(Er

bits

clear)

S-fn

Susp IS in S-fn Susp S-fn Suspend N/A S-fn Susp N/A

IS in S-fn Susp Sub-function Suspend

P33-65nm

Datasheet Mar 2010

82 Order Number: 320003-09

Buffer

Pgm

(BP)

Setup BP Load 1

N/A

BP Load 1 (8) BP Load 2 if word count >0, else BP confirm

BP Load 2 (8) BP Confirm if data load in program buffer is complete, ELSE BP load 2

Ready

(Error

[Botc

h])

BP Confirm if data

load in program

buffer is

complete, else BP

load 2

BP Confirm Ready (Error [Botch]) BP

Busy Ready (Error [Botch])

BP Busy BP

Busy

IS in

Busy

BP Busy Illegal State

in BP Busy

Busy

Susp BP Busy IS in BP Busy BP Busy BP Busy Ready

IS in BP Busy BP Busy

BP Susp BP

Susp

IS in

Susp

BP Suspend Illegal State

in BP Busy

Busy BP Suspend

Susp

(Er

bits

clear)

Susp IS in BP Susp BP Suspend N/A BP Susp N/A

IS in BP Susp BP Suspend

Erase

Setup Ready (Error [Botch]) Erase

Busy Ready (Error [Botch]) N/A Ready (Err

Botch0])

N/A

Busy Erase

Busy

IS in

Erase

Busy

Erase Busy IS in Erase

Busy

Erase

Busy

Erase

Susp Erase Busy IS in Erase Busy Erase Busy N/A Ers Busy

IS in Erase Busy Erase Busy Ready

Suspend Erase

Susp

Word

Pgm

Setup

Erase

Susp

Setup

Erase

Susp

EFI

Setup

Erase

Susp

IS in Erase

Suspend

Erase

Busy

Erase

Suspend

Erase

Susp

(Er

bits

clear)

Erase

Susp

Lock/

RCR/

ECR

Setup

Erase

Susp

Erase

Susp

IS in

Erase

Susp

Erase Suspend N/A Erase Susp N/A

IS in Erase Susp Erase Suspend

Word

Pgm in

Erase

Suspend

Setup Word Pgm busy in Erase Suspend

N/A

Word Pgm Busy in

Ers Suspend

N/A

Busy

Word

Pgm

busy

Erase

Susp

IS in

Pgm

busy

in Ers

Susp

Word Pgm

busy in

Erase Susp

IS in Word

Pgm busy in

Ers Susp

Word

Pgm

busy

Erase

Susp

Word

Pgm

Susp

in Ers

Susp

Word Pgm busy in

Erase Susp

IS in Word Pgm

busy in Ers Susp

Word Pgm busy in

Erase Susp

Erase

Susp

Illegal state(IS)

in Pgm busy in

Erase Suspend

Word Pgm busy in Erase Suspend

IS in

Ers

Susp

Suspend

Word

Pgm

susp

in Ers

susp

iS in

pgm

susp

in Ers

Susp

Word Pgm

susp in Ers

susp

iS in pgm

susp in Ers

Susp

Word

Pgm

busy

Erase

Susp

Word

Pgm

susp

in Ers

susp

Word

Pgm

susp

in Ers

susp

Word

Pgm

Susp

in Ers

Susp

(Er

bits

clear)

Word

Pgm

susp

in Ers

susp

iS in Word Pgm

susp in Ers Susp

Word Pgm susp in

Ers susp N/A

N/A

Illegal State in

Word Program

Suspend in Erase

Suspend

Word Pgm busy in Erase Suspend

BP in

Erase

Suspend

Setup BP Load 1 in Erase Suspend

N/A

BP Load 1 (8) BP Load 2 in Erase Suspend if word count >0, else BP confirm

BP Load 2 (8) BP Confirming Erase Suspend if data load in program buffer is complete, ELSE BP load 2 in Erase Suspend

Ers

Susp

(Error

[Botc

h])

BP Confirm in

Erase Suspend

when count=0,

ELSE BP load 2

BP Confirm Erase Suspend (Error [BotchBP])

Busy

in Ers

Susp

Erase Susp (Error [Botch BP])

BP Busy

Busy

in Ers

Susp

IS in

Busy

in Ers

Susp

BP Busy in

Erase Susp

Illegal State

in BP Busy in

Ers Susp

Susp

in Ers

Susp

BP Busy in Ers Susp IS in BP Busy in

Erase Suspend BP Busy in Ers Susp N/A BP Busy in Ers

Susp

Erase

Susp

IS in BP Busy BP Busy in Erase Suspend

IS in

Ers

Susp

BP Susp

Susp

in Ers

Susp

IS in

Susp

in Ers

Susp

BP Suspend

in Erase

Suspend

Illegal State

in BP Busy in

Ers Susp

Busy

in Ers

Susp

BP Susp in

Ers Susp

Susp

in Ers

Susp

(Er

bits

clear)

Susp

in Ers

Susp

IS in BP Busy in

Erase Suspend BP Susp in Ers Susp N/A BP Susp in Ers

Susp N/A

IS in BP Suspend BP Suspend in Erase Suspend

Table 41: Next State Table for P3x-65nm (Sheet 2 of 3)

Command Input and Resulting Chip Next State(1)

Current Chip State

Array Read (3)

Word Pgm Setup (4,9)

BP Setup (8)

EFI Command Setup

Erase Setup (4,9)

BEFP Setup (6)

Confirm (7)

Pgm/Ers Suspend

Read Status

Clear SR (5)

Read ID/Query

Lock/RCR/ECR Setup

Blank Check

OTP Setup

Lock Blk Confirm (7)

Lock-down Blk Confirm (7)

Write ECR/RCR Confirm (7)

Block Address Change

Other Commands (2)

WSM Operation Completes

(FFh) (40h) (E8h) (EBh) (20h) (80h) (D0h) (B0) (70h) (50h) (90h,

98h) (60h) (BCh) (C0h) (01h) (2Fh) (03h,

04h) other

Datasheet Mar 2010

83 Order Number:320003-09

P33-65nm

EFI in

Erase

Suspend

EFI Setup Sub-function Setup in Erase Suspend

N/A

Sub-function

Setup Sub-op-code Load 1 in Erase Suspend

Sub-op-code

Load 1 Sub-function Load 2 in Erase Suspend if word count >0, else Sub-function confirm in Erase Suspend

Sub-function

Load 2 Sub-function Confirm in Erase Suspend if data load in program buffer is complete, ELSE Sub-function Load 2

Ers

Susp

(Error

[Botc

h])

Sub-function

Confirm if data

load in program

buffer is

complete, ELSE

Sub-function

Load 2

Sub-function

Confirm Erase Suspend (Error [Botch])

S-fn

Busy

in Ers

Susp

Erase Suspend (Error [Botch])

Sub-function

Busy

S-fn

Busy

in Ers

Susp

IS in

S-fn

Busy

in Ers

Susp

S-fn Busy in

Ers Suspend

Illegal State

in S-fn Busy

in Ers Susp

S-fn

Susp

in Ers

Susp

S-fn Busy in Ers

Susp

IS in S-fn Busy in

Ers Susp

S-fn Busy in Ers

Susp N/A S-fn Busy in Ers

Susp

Erase

Susp

IS in Sub-

function Busy Sub-function Busy in Ers Susp

IS in

Ers

Susp

Sub-function

Susp

S-fn

Susp

in Ers

Susp

IS in

S-fn

Susp

in Ers

Susp

S-fn

Suspend in

Ers Susp

Illegal State

in S-fn Busy

in Ers Susp

S-fn

Busy

in Ers

Susp

S-fn

Suspend in

Ers Susp

S-fn

Susp

in Ers

Susp

(Er

bits

clear)

S-fn

Susp

in Ers

Susp

IS in S-fn Susp in

Ers Susp

S-fn Suspend in Ers

Susp N/A S-fn Susp in Ers

Susp N/A

IS in Phase-1

Susp Sub-Function Suspend in Erase Suspend

Lock/RCR/ECR/Lock

EFA Block Setup in

Erase Suspend

Erase Suspend (Lock Error

[Botch])

Ers

Susp

(Un-

lock

Block

)

Ers Susp (Lock Error [Botch])

Ers

Susp

(Error

[Botc

h])

Ers

Susp

Blk

Lock

Ers

Susp

Blk

Lk-

Down

Ers

Susp

Set

N/A Ers Susp (Error

[Botch]) N/A

Blank

Check

Setup Ready (Error [Botch]) BC

Busy Ready (Error [Botch])

N/A

Ready (Error

[Botch]) N/A

Blank Check Busy BC

Busy

IS in

Busy

BC Busy IS in BC

Busy Blank Check Busy IS in BC Busy BC Busy

BC Busy Ready

IS in Blank Check

Busy BP Busy

BEFP

Setup Ready (Error [Botch])

BEFP

Load

Data

Ready (Error [Botch]) N/A

BEFP Busy BEFP Program and Verify Busy (if Block Address given matches address given on BEFP Setup command). Commands

treated as data. (7) Ready BEFP Busy Ready

Table 41: Next State Table for P3x-65nm (Sheet 3 of 3)

Command Input and Resulting Chip Next State(1)

Current Chip State

Array Read (3)

Word Pgm Setup (4,9)

BP Setup (8)

EFI Command Setup

Erase Setup (4,9)

BEFP Setup (6)

Confirm (7)

Pgm/Ers Suspend

Read Status

Clear SR (5)

Read ID/Query

Lock/RCR/ECR Setup

Blank Check

OTP Setup

Lock Blk Confirm (7)

Lock-down Blk Confirm (7)

Write ECR/RCR Confirm (7)

Block Address Change

Other Commands (2)

WSM Operation Completes

(FFh) (40h) (E8h) (EBh) (20h) (80h) (D0h) (B0) (70h) (50h) (90h,

98h) (60h) (BCh) (C0h) (01h) (2Fh) (03h,

04h) other

P33-65nm

Datasheet Mar 2010

84 Order Number: 320003-09

Notes:

1. IS refers to Illegal State in the Next State Table.

2. “Illegal commands” include commands outside of the allowed command set.

3. The device defaults to "Read Array" on powerup.

4. If a “Read Array” is attempted when the device is busy, the result will be “garbage” data (we should not tell the user that

it will actually be Status Register data). The key point is that the output mux will be pointing to the “array”, but garbage

data will be output. “Read ID” and "Read Query" commands do the exact same thing in the device. The ID and Query data

are located at different locations in the address map.

5. The Clear Status command only clears the error bits in the status register if the device is not in the following modes:1.

WSM running (Pgm Busy, Erase Busy, Pgm Busy In Erase Suspend, OTP Busy, BEFP modes) 2. Suspend states (Erase

Suspend, Pgm Suspend, Pgm Suspend In Erase Suspend).

6. BEFP writes are only allowed when the status register bit #0 = 0 or else the data is ignored.

7. Confirm commands (Lock Block, Unlock Block, Lock-Down Block, Configuration Register and Blank Check) perform the

operation and then move to the Ready State.

8. Buffered programming will botch when a different block address (as compared to the address given on the first data write

cycle) is written during the BP Load1 and BP Load2 states.

9. All two cycle commands will be considered as a contiguous whole during device suspend states. Individual commands will

not be parsed separately. (I.e. If an erase set-up command is issued followed by a D0h command, the D0h command will

not resume the program operation. Issuing the erase set-up places the CUI in an “illegal state”. A subsequent command

will clear the “illegal state”, but the command will be otherwise ignored.

Table 42: Output Next State Table for P3x-65nm

Command Input to Chip and Resulting Output MUX Next State(1)

Current Chip State

Array Read (3)

Word Pgm Setup (4,9)

BP Setup (8)

EFI Command Setup

Erase Setup (4,9)

BEFP Setup (6)

Confirm (7)

Pgm/Ers Suspend

Read Status

Clear SR (5)

Read ID/Query

Lock/RCR/ECR Setup

Blank Check

OTP Setup

Lock Blk Confirm (7)

Lock-down Blk Confirm (7)

Write ECR/RCR Confirm (7)

Block Address Change

Other Commands (2)

WSM Operation Completes

(FFh) (40h) (E8h) (EBh) (20h) (80h) (D0h) (B0) (70h) (50h) (90h,

98h) (60h) (BCh) (C0h) (01h) (2Fh) (03h,

04h) other

BEFP Setup,

BEFP Pgm & Verify Busy,

Erase Setup,

OTP Setup,

BP Setup, Load 1, Load 2

BP Setup, Load1, Load 2 - in

Erase Susp.

BP Confirm

EFI Sub-function Confirm

Word Pgm Setup,

Word Pgm Setup in Erase

Susp,

BP Confirm in Erase Suspend,

EFI S-fn Confirm in Ers Susp,

Blank Check Setup,

Blank Check Busy

Status Read

Output MUX does not Change

Lock/RCR/ECR Setup,

Lock/RCR/ECR Setup in Erase

Susp Status Read

Array

Read

EFI S-fn Setup, Ld 1, Ld 2

EFI S-fn Setup, Ld1, Ld 2 - in

Erase Susp. Output MUX will not change

BP Busy

BP Busy in Erase Suspend

EFI Sub-function Busy

EFI Sub-fn Busy in Ers Susp

Word Program Busy,

Word Pgm Busy in Erase

Suspend,

OTP Busy

Erase Busy

Status Read

Status

Read

Status Read

Status

Read

Output MUX

Does not Change

Status Read

Array Read

Status Read

Status Read Output MUX does

not Change

Ready,

Word Pgm Suspend,

BP Suspend,

Phase-1 BP Suspend,

Erase Suspend,

BP Suspend in Erase Suspend

Phase-1 BP Susp in Ers Susp

Array Read

Output MUX

doesn’t Change

ID/Query Read

Datasheet Mar 2010

85 Order Number:320003-09

P33-65nm

Appendix B Conventions - Additional Documentation

B.1 Acronyms

B.2 Definitions and Terms

BEFP: Buffered Enhanced Factory Programming

CUI : Command User Interface

MLC : Multi-Level Cell

OTP : One-Time Programmable

PLR : one-time programmable Lock Register

PR : one-time programmable Register

RCR : Read Configuration Register

RFU : Reserved for Future Use

SR : Status Register

SRD Status Register Data

WSM Write State Machine

VCC : Signal or voltage connection

VCC : Signal or voltage level

h : Hexadecimal number suffix

0b : Binary number prefix

0x : hexadecimal number prefix

SR.4 : Denotes an individual register bit.

A[15:0] : Denotes a group of similarly named signals, such as address or data bus.

A5 : Denotes one element of a signal group membership, such as an individual address

bit.

Bit : Single Binary unit

Byte : Eight bits

Word : Two bytes, or sixteen bits

Kbit : 1024 bits

KByte : 1024 bytes

KWord : 1024 words

Mbit : 1,048,576 bits

MByte : 1,048,576 bytes

MWord : 1,048,576 words

K 1,000

M 1,000,000

3.0 V : VCC (core) and VCCQ (I/O) voltage range of 2.3 V – 3.6 V

9.0 V : VPP voltage range of 8.5 V – 9.5 V

Block : A group of bits, bytes, or words within the flash memory array that erase

simultaneously. The P33-65nm has two block sizes: 32 KByte and 128 KByte.

P33-65nm

Datasheet Mar 2010

86 Order Number: 320003-09

Main block : An array block that is usually used to store code and/or data. Main blocks are larger

than parameter blocks.

Parameter block : An array block that may be used to store frequently changing data or small system

parameters that traditionally would be stored in EEPROM.

Top parameter device : A device with its parameter blocks located at the highest physical address of its

memory map.

Bottom parameter device : A device with its parameter blocks located at the lowest physical address of its

memory map.

Datasheet Mar 2010

87 Order Number:320003-09

P33-65nm

Appendix C Revision History

Date Revision Description

Mar 2010 09

Program performance update in front page, Section 25, “Program and Erase

Specifications” and CFI.

tDVWH specification comments, Table 24, “AC Write Specifications” on page 54.

Erase/program suspend latency specification update, Table 25, “Program and Erase

Specifications” on page 58.

Leaded TSOP part EOL.

Burst latency update and 40MHz spec update, Table 12, “LC and Frequency Support”

on page 36.

Clarify the capacitance, Table 22, “Capacitance” on page 49.

Ordering Information update.

Aug 2009 08

Update the Block lock Operations, Program Suspend/Resume, Erase Suspend/Resume flowcharts in

Figure 36, Figure 37, Figure 37, backward compatible with 130nm.

Align the sequence error description in Tab l e 1 1 .

Add TSOP 40Mhz Burst Spec, fCLK, tCLK, tCHQV

, tCHTV

, Table 23, “AC Read Specifications -”

on page 49.

Add note 7 in buffer program flowchart Figure 33.

Update VIL undershoot and overshoot of Note 2 in Ta b l e 2 0 .

Update CFI 0x2A data in Section A.1, “Common Flash Interface” .

Apr 2009 07

Add 512 Mbit (256/256) memory map in Figure 1, “P33-65nm Memory Map” on

page 7

Correct RCR.4, RCR.5, RCR.7 and RCR.9 definitions in Table 11, “Read Configuration

Correct A0 to A1 signal naming and remove invalid x8 information in Table 29, “Example of

Query Structure Output of x16 Devices” on page 62

Dec 2008 06

Correct Page buffer address bits to Four on Section 7.1, “Asynchronous Page-Mode

Read” on page 21.

Correct VHH to VPPH on Table 19, “DC Current Characteristics” on page 46 note.

Nov 2008 05

Update the Buffer program flowchart to reflect the read status register;

minor wording modification;

Return to StrataFlash;

Update the buffer program comments for cross 512-Word boundary;

Remove 128M related contents from this document;

Correct A24 to A25 for virtual CE description in section 1.3;

Remove Numonyx Confidential;

Sep 2008 04 Updated AxcellTM trademark;

Remove 64M related content;

July 2008 03

Added W28 AC specification;

Fixed Buffered Program Command error in figure 38;

Updated block locking state diagram;

Updated Address range in Memory Map figure;

Changed LSB Address from A0 to A1 in figure7 under dual die configurations section;

Changed LSB Address in ballout and pinout description from A0 back to A1 to match P33 130nm.

June 2008 02 Corrected SCSP order information

May 2008 01 Initial release

P33-65nm

Datasheet Mar 2010

88 Order Number: 320003-09