TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Product Description Qorvo's TGA2622-CP is a packaged high-power X-Band amplifier fabricated on Qorvo's QGaN25 0.25 um GaN on SiC process. Operating from 9 to 10 GHz, the TGA2622CP achieves 35 W saturated output power, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB. The TGA2622-CP is packaged in a 10-lead 15x15 mm boltdown package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under CW and pulsed conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGA2622-CP is ideally suited for both commercial and defense applications. Product Features Lead free and RoHS compliant. * * * * * Frequency Range: 9 - 10 GHz PSAT: 45.5 dBm @ PIN = 18 dBm PAE: > 43 % @ PIN = 18 dBm Power Gain: 27.5 dB @ PIN = 18 dBm Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical, pulsed (PW = 100 s, DC = 10 %) * Package Dimensions: 15.2 x 15.2 x 3.5 mm * Package base is pure Cu offering superior thermal management Functional Block Diagram 1 10 2 3 4 5 9 8 7 6 Performance is typical across frequency. Please reference electrical specification table and data plots for more details Applications * Weather and Marine Radar. Ordering Information Data Sheet Rev. B, March 29 2019 Part No. Description TGA2622-CP 1113526 9 - 10 GHz 35 W GaN Power Amplifier TGA2622-CP Evaluation Board (EVB) - 1 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 C Input Power, CW, 50 , (PIN) Input Power, CW, VSWR 3:1, VD = 28 V, 85 C, (PIN) Mounting Temperature (30 Seconds) Storage Temperature Recommended Operating Conditions Value / Range Value / Range Parameter 40 V -8 to 0 V 4.3 A See plot page 11 Drain Voltage (VD) pulsed: PW = 100 s, DC = 10 % 28 V Drain Current (IDQ) Gate Voltage (VG) Temperature (TBASE) 107 W 24 dBm 290 mA -2.7 V (Typ.) -40 to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 24 dBm 260 C -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Operational Frequency Range Small Signal Gain Input Return Loss Output Return Loss Output Power @ PIN = 18 dBm Power Added Efficiency @ PIN = 18 dBm Power Gain @ PIN = 18 dBm Output Power Temperature Coefficient Pulsed (25 C to 85 C only) CW Recommended Operating Voltage Min Typ 9 Max Units 10 GHz dB dB dB 30 > 11 >8 45.5 > 43 27.5 -0.019 -0.023 28 20 dBm % dB dBm/C 32 V Test conditions unless otherwise noted: 25 C, VD = 28 V (PW = 100 s, DC = 10 %), IDQ = 290 mA, VG = -2.7 V typical. Data Sheet Rev. B, March 29 2019 - 2 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Typical Performance - Large Signal (Pulsed) Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical. Output Power vs. Frequency vs. VD 47 PIN = 18dBm Temp. = +25 C 46 46 45 45 POUT (dBm) POUT (dBm) Output Power vs. Frequency vs. Temp. 47 44 Vd=25V 43 Vd=28V 42 IDQ = 290mA Vd=30V 41 8.5 9 9.5 44 43 -40C +25C 42 +85C 41 Pulsed: PW=100us, DC=10% 40 PIN = 18dBm 40 10 10.5 8.5 9 9.5 Frequency (GHz) Output Power vs. Freq vs. Input Power 45 41 16dBm 17dBm 18dBm 19dBm 20dBm 43 42 41 Output Power vs. Input Power vs. Temp. 38 -40C 35 +25C 32 +85C 29 Pulsed: PW=100 us, DC=10% 40 9 9.5 10 10.5 2 4 6 8 Output Power vs. Frequency vs. IDQ PIN = 18dBm Temp. = +25 C 45 43 POUT (dBm) 45 44 290mA 725mA 42 VD = 28V 41 8.5 9 9.5 16 18 20 Freq. = 9.5 GHz 41 39 290 mA 37 725 mA 35 VD = 28V Pulsed: PW=100us, DC=10% 10 31 10.5 2 4 6 8 10 12 14 16 18 20 Input Power (dBm) Frequency (GHz) Data Sheet Rev. B, March 29 2019 14 Temp. = +25 C 33 Pulsed: PW=100us, DC=10% 40 12 Output Power vs. Input Power vs. IDQ 47 46 43 10 Input Power (dBm) Frequency (GHz) 47 VD = 28V, IDQ = 290mA Pulsed: PW=100us, DC=10% 26 8.5 POUT (dBm) 10.5 Freq. = 9.5GHz 44 POUT (dBm) POUT (dBm) 47 VD = 28 V, IDQ = 290 mA 46 44 10 Frequency (GHz) 47 Temp. = +25 C Pulsed: PW=100us, DC=10% VD = 28V, IDQ = 290mA - 3 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Typical Performance - Large Signal (Pulsed) Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical. PAE vs. Frequency vs. VD 55 PIN = 18dBm Temp. = +25 C Power Gain (dB) PAE (%) 45 40 Vd=25V Vd=28V 30 IDQ = 290mA Vd=30V 28 27 26 Vd=25V 25 Vd=28V Pulsed: PW=100us, DC=10% Pulsed: PW=100us, DC=10% 23 9 9.5 10 10.5 8.5 9 Pulsed: PW=100us, DC=10% Power Gain (dB) PAE (%) 45 40 -40C +25C +85C Pulsed: PW=100us, DC=10% VD = 28V, IDQ = 290mA 29 30 28 27 26 -40C +25C 25 +85C 24 PIN = 18dBm 25 8.5 9 PIN = 18dBm 23 9.5 10 10.5 8.5 9 Frequency (GHz) 9.5 10 10.5 Frequency (GHz) PAE vs. Input Power vs. Temp. Power Gain vs. Input Power vs. Temp. 60 40 Pulsed: PW=100us, DC=10% VD = 28V, IDQ = 290mA Pulsed: PW=100us, DC=10% VD = 28V, IDQ = 290mA 37 50 40 Gain (dB) PAE (%) 10.5 30 50 35 10 Power Gain vs. Frequency vs. Temp. PAE vs. Frequency vs. Temperature VD = 28V, IDQ = 290mA 9.5 Frequency (GHz) Frequency (GHz) 55 IDQ = 290mA Vd=30V 24 25 8.5 PIN = 18dBm Temp. = +25 C 29 50 35 Power Gain vs. Frequency vs. VD 30 30 -40C 20 +25C +85C 10 34 31 28 25 -40C 22 +25C Freq. = 9.5 GHz +85C Freq. = 9.5 GHz 0 19 2 4 6 8 10 12 14 16 18 20 2 Input Power (dBm) Data Sheet Rev. B, March 29 2019 4 6 8 10 12 14 16 18 20 Input Power (dBm) - 4 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Typical Performance - Large Signal (Pulsed) Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical. Drain Current vs. Frequency vs. VD 4000 PIN = 18dBm Temp. = +25 C Gate Current (mA) Drain Current (mA) 3000 2500 Vd=25V 1500 Vd=28V IDQ = 290mA Vd=30V 1000 8 Vd=25V 6 Vd=28V Vd=30V 4 2 0 IDQ = 290mA Pulsed: PW=100us, DC=10% Pulsed: PW=100us, DC=10% 500 -2 8.5 9 9.5 10 10.5 8.5 9 Frequency (GHz) Drain Current vs. Frequency vs. Temp. 30 PIN = 18dBm 10.5 Gate Current vs. Frequency vs. Temp. PIN = 18dBm VD = 28V, IDQ = 290mA 2500 -40C 2000 +25C +85C 1500 1000 VD = 28V, IDQ = 290mA Pulsed: PW=100us, DC=10% 500 8.5 9 9.5 20 15 -40C 10 +85C 0 Pulsed: PW=100us, DC=10% -5 10 10.5 8.5 9 9.5 10 10.5 Frequency (GHz) Drain Current vs. Input Power vs. Temp. 40 Pulsed: PW=100us, DC=10% Gate Current vs. Input Power vs. Temp. Pulsed: PW=100us, DC=10% 35 Gate Current (mA) 3000 +25C 5 Frequency (GHz) Drain Current (mA) 10 25 3000 3500 9.5 Frequency (GHz) Gate Current (mA) Drain Current (mA) 3500 PIN = 18dBm Temp. = +25 C 3500 2000 Gate Current vs. Frequency vs. VD 10 VD = 28V, IDQ = 290mA 2500 2000 -40C 1500 +25C 1000 Freq. = 9.5 GHz VD = 28V, IDQ = 290mA 30 25 20 15 10 -40C 5 +85C +25C +85C 0 Freq. = 9.5 GHz -5 500 2 4 6 8 10 12 14 16 18 2 20 Data Sheet Rev. B, March 29 2019 4 6 8 10 12 14 16 18 20 Input Power (dBm) Input Power (dBm) - 5 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Performance Plots - Large Signal (CW) Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical. Output Power vs. Frequency vs. VD 47 CW PIN = 18dBm 46 45 45 44 Vd=25V 43 Vd=28V 42 Vd=30V 44 43 -40C +25C 42 +85C 41 41 IDQ = 290mA 40 8.5 9 9.5 VD = 28V, IDQ = 290mA 40 10 10.5 8.5 9 9.5 Frequency (GHz) Output Power vs. Freq vs. Input Power 47 Temp. = +25 C 45 POUT (dBm) POUT (dBm) Freq. = 9.5 GHz 44 44 16dBm 17dBm 18dBm 19dBm 20dBm 43 42 41 41 38 -40C +25C +85C 35 32 29 VD = 28 V, IDQ = 290 mA 40 CW VD = 28V, IDQ = 290mA 26 8.5 9 9.5 10 10.5 2 4 6 Output Power vs. Frequency vs. IDQ 10 12 14 16 18 20 Output Power vs. Input Power vs. IDQ 47 PIN = 18dBm VD = 28V Temp. = +25 C 46 8 Input Power (dBm) Frequency (GHz) 47 10.5 Output Power vs. Input Power vs. Temp. CW 46 10 Frequency (GHz) 47 CW Temp. = +25 C 45 43 45 44 POUT (dBm) POUT (dBm) PIN = 18dBm CW 46 POUT (dBm) POUT (dBm) Temp. = +25 C Output Power vs. Frequency vs. Temp. 47 290mA 43 725mA 42 41 41 39 37 290 mA 35 725 mA 33 CW 8.5 9 9.5 10 2 10.5 4 6 8 10 12 14 16 18 20 Input Power (dBm) Frequency (GHz) Data Sheet Rev. B, March 29 2019 VD = 28V 31 40 - 6 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Performance Plots - Large Signal (CW) Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical. PAE vs. Frequency vs. VD 55 PIN = 18dBm Temp. = +25 C CW Power Gain (dB) PAE (%) 45 40 Vd=25V Vd=28V Vd=30V 30 CW Temp. = +25 C 28 27 26 Vd=25V 25 Vd=28V 24 Vd=30V IDQ = 290mA 25 IDQ = 290mA 23 8.5 9 9.5 10 10.5 8.5 9 PAE vs. Frequency vs. Temperature PIN = 18dBm CW Power Gain (dB) PAE (%) 40 -40C +25C +85C 28 27 26 25 -40C +25C 24 +85C VD = 28V, IDQ = 290mA 25 CW 23 8.5 9 9.5 10 10.5 8.5 9 Frequency (GHz) Power Gain (dB) 40 30 20 -40C +25C 10 +85C 8 10 12 14 32 30 28 16 18 +25C +85C 2 20 Freq. = 9.5 GHz CW 4 6 8 10 12 14 16 18 20 Frequency (GHz) Frequency (GHz) Data Sheet Rev. B, March 29 2019 -40C 26 22 0 6 34 24 VD = 28V, IDQ = 290mA 4 10.5 VD = 28V, IDQ = 290mA 36 50 2 10 Power Gain vs. Input Power vs. Temp. 38 CW Freq. = 9.5 GHz 9.5 Frequency (GHz) PAE vs. Input Power vs. Temperature 60 PAE (%) 10.5 VD = 28V, IDQ = 290mA PIN = 18dBm 29 45 30 10 Power Gain vs. Frequency vs. Temp. 30 50 35 9.5 Frequency (GHz) Frequency (GHz) 55 PIN = 18dBm 29 50 35 Power Gain vs. Frequency vs. VD 30 - 7 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Performance Plots - Large Signal (CW) Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical. Drain Current vs. Frequency vs. VD 3500 CW PIN = 18dBm CW Temp. = +25 C 2500 2000 Vd=25V 1500 Vd=28V 1000 Vd=30V 8.5 Vd=25V 20 Vd=28V 15 Vd=30V 10 5 0 IDQ = 290mA 500 9 IDQ = 290mA -5 9.5 10 10.5 8.5 9 9.5 Frequency (GHz) Gate Current (mA) Drain Current (mA) 2500 2000 -40C +25C +85C 1000 20 +25C 15 +85C 10 5 0 VD = 28V, IDQ = 290mA VD = 28V, IDQ = 290mA -5 500 8.5 9 9.5 10 8.5 10.5 9 Drain Current vs. Input Power vs. Temp. Freq. = 9.5 GHz 5 10 10.5 Gate Current vs. Input Power vs. Temp. Freq. = 9.5 GHz CW 3000 9.5 Frequency (GHz) Frequency (GHz) CW 4 Gate Current (mA) Drain Current (mA) PIN = 18dBm CW 25 3000 1500 10.5 Gate Current vs. Frequency vs. Temp. 30 PIN = 18dBm CW 10 Frequency (GHz) Drain Current vs. Frequency vs. Temp. 3500 3500 PIN = 18dBm 25 3000 Gate Current (mA) Drain Current (mA) Temp. = +25 C Gate Current vs. Frequency vs. VD 30 2500 2000 1500 -40C 1000 +25C 500 +85C VD = 28V, IDQ = 290mA 0 2 4 6 8 10 12 14 3 2 1 VD = 28V, IDQ = 290mA -1 16 18 +85C 0 2 20 4 6 8 10 12 14 16 18 Frequency (GHz) Frequency (GHz) Data Sheet Rev. B, March 29 2019 +25C - 8 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Typical Performance - Linearity (CW) Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical. 2nd Harmonic vs. Frequency vs. PIN 2f0 Output Power (dBc) Temp. = +25 C Temp. = +25 C VD = 28V, IDQ = 290mA -25 10dBm 18dBm -30 3rd Harmonic vs. Frequency vs. PIN -30 3f0 Output Power (dBc) -20 -35 -40 -45 -50 VD = 28V, IDQ = 290mA -40 -50 -60 -70 10dBm 18dBm -80 -90 9 9.2 9.4 9.6 9.8 10 9 9.2 Frequency (GHz) IM3 vs. Output Power vs. Frequency 0 9.4 9.6 9.8 10 Frequency (GHz) IM5 vs. Output Power vs. Frequency -10 VD = 28V, IDQ = 290mA, 1MHz Tone Spacing VD = 28V, IDQ = 290mA, 1MHz Tone Spacing -20 -10 IM5 (dBc) IM3 (dBc) -30 -20 -30 9.0GHz 9.5GHz -40 -50 9.0GHz -60 10.0GHz -40 9.5GHz 10.0GHz -70 Temp. = +25 C Temp. = +25 C -50 -80 10 15 20 25 30 35 40 10 15 Output Power per Tone (dBm) IM3 vs. Output Power vs. IDQ 0 20 25 30 35 40 Output Power per Tone (dBm) IM5 vs. Output Power vs. IDQ -10 Freq. = 9.5GHz, 1MHz Tone Spacing Freq. = 9.5GHz, 1MHz Tone Spacing -20 -10 IM5 (dBc) IM3 (dBc) -30 -20 -30 -50 -60 V=28V, IDQ=290mA -40 -40 V=28V, IDQ=725mA -70 Temp. = +25 C -50 V=28V, IDQ=290mA V=28V, IDQ=725mA Temp. = +25 C -80 10 15 20 25 30 35 40 10 Data Sheet Rev. B, March 29 2019 15 20 25 30 35 40 Output Power per Tone (dBm) Output Power per Tone (dBm) - 9 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Typical Performance - Small Signal (CW) Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical. Gain vs. Frequency vs. Temperature 36 36 33 33 30 27 24 -40C 21 30 27 24 290mA 21 +25C 18 Gain vs. Frequency vs. IDQ 39 S21 (dB) S21 (dB) 39 VD = 28 V, IDQ = 290mA +85C 725mA 18 15 VD = 28V 15 8.5 9 9.5 10 10.5 8.5 9 Frequency (GHz) Input Return Loss vs. Freq. vs. Temp. VD = 28 V -5 -5 -10 -10 S11 (dB) S11 (dB) VD = 28 V, IDQ = 290mA -15 -40C +25C -15 -20 290 mA -25 725 mA +85C -30 -30 8.5 9 9.5 10 10.5 8.5 9 Frequency (GHz) Output Return Loss vs. Freq. vs. Temp. VD = 28 V, IDQ = 290mA 10.5 VD = 28 V -5 -10 -10 S22 (dB) -5 -15 -40C -15 -20 290 mA +25C -25 10 Output Return Loss vs. Freq. vs. IDQ 0 -20 9.5 Frequency (GHz) 0 S22 (dB) 10.5 Input Return Loss vs. Freq. vs. IDQ 0 -25 10 Frequency (GHz) 0 -20 9.5 Temp. = +25 C 725 mA -25 +85C -30 -30 8.5 9 9.5 10 10.5 8.5 Frequency (GHz) Data Sheet Rev. B, March 29 2019 9 9.5 10 10.5 Frequency (GHz) - 10 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Thermal and Reliability Information Parameter Test Conditions Thermal Resistance (JC) (1) Channel Temperature (TCH) (under RF drive) Thermal Resistance (JC) (1) Channel Temperature (TCH) (under RF drive) Notes: 1. 2. Value Units 1.222 C/W 140 C 0.788 C/W 126 C CW, VD = 28 V, IDQ = 290 mA, TBASE = 85C, VD = 28 V, ID_Drive = 2.7 A PIN = 20 dBm, POUT = 44.8 dBm PDISS = 45 W VD = 28 V, IDQ = 290 mA, (Pulsed: PW = 100 s, DC = 10 %), TBASE = 85C, VD = 28 V, ID_Drive = 3.2 A PIN = 20 dBm, POUT = 45.6 dBm, PDISS = 52 W Thermal resistance measured to back of package. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Power Dissipation and Maximum Gate Current IG_MAX vs. TCH 200 Maximum Gate Current (mA) 180 160 140 120 100 80 60 40 20 0 110 120 130 140 150 160 170 180 Channel Temperature (C) PDISS vs. Frequency vs. TBASE 60 PIN = 18dBm PIN = 18dBm 50 40 40 PDISS (W) PDISS (W) CW 50 30 -40C +25C +85C 20 PDISS vs. Frequency vs. TBASE 60 10 30 -40C +25C +85C 20 10 VD = 28V; IDQ = 290mA VD = 28V; IDQ = 290mA 0 Pulsed: PW=100us, DC=10% 0 8.5 9 9.5 10 10.5 8.5 Frequency (GHz) Data Sheet Rev. B, March 29 2019 9 9.5 10 10.5 Frequency (GHz) - 11 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Applications Information and Pin Layout Bias Up Procedure Bias Down Procedure 1. Set ID limit to 3.5 A, IG limit to 25 mA 2. Apply -5 V to VG 3. Apply +28 V to VD; ensure IDQ is approx. 0 mA 1. Turn off RF supply 2. Reduce VG to -5 V; ensure IDQ is approx. 0 mA 3. Set VD to 0 V 4. Adjust VG until IDQ = 290 mA (VG ~ -2.7 V Typ.). 5. Turn on RF supply 4. Turn off VD supply 5. Turn off VG supply Pin Description Pad No. Symbol 1, 5 VG 3 2, 4, 7, 9 RFIN GND 6, 10 VD 8 RFOUT Data Sheet Rev. B, March 29 2019 Description Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. Output; matched to 50 ; DC blocked Must be grounded on the PCB. Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. Input; matched to 50 ; DC blocked - 12 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Evaluation Board (EVB) GND Vg VD GND P1 C5 R3 C1 R1 R2 C2 C11 C5 RF IN R7 CP-06 EVB R3 C9 C3 C7 C1 R1 R5 R6 R2 C8 C2 C10 C4 R4 C6 R4 1119607 REV A RF OUT C7 R5 R6 C8 R8 C12 C6 P2 GND Vg VD GND NOTES: (1) Both Top and Bottom Vd and Vg must be biased. (2) PCB is made from Rogers 4003C dielectric, 0.008 inch thick. 0.5 oz. copper both sides. Bill of Materials Reference Des. C1, C2 C5, C6 C7, C8 R1, R2, R5, R6 R3, R4 Value Description Manuf. 0.1 uF 10-47 uF 0.01 uF 10 0 Cap, 0402, 50 V, 10%, X7R Cap, 1206, 50 V, 20%, X5R (10 V is OK) Cap, 0402, 50V, 10%, X7R Res, 0402, 50V, 5% Res, 0402, jumper required for the above EVB design Various Various Various Various Various Data Sheet Rev. B, March 29 2019 - 13 of 16 - Part Number www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Assembly Notes 1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully. 2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the package. 3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz., then torque to final value. Use the following tightening pattern: 4. Apply no-flux solder to each pin of the TGA2622-CP. The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after soldering is recommended. Data Sheet Rev. B, March 29 2019 - 14 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Mechanical Information Units: inches Tolerances: unless specified x.xx = 0.01 x.xxx = 0.005 Materials: Base: Copper Lid: Plastic All metalized features are gold plated Part is epoxy sealed Marking: 2622: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID Data Sheet Rev. B, March 29 2019 - 15 of 16 - www.qorvo.com TGA2622-CP 9 - 10 GHz 35 W GaN Power Amplifier Handling Precautions Parameter Rating Standard ESD - Human Body Model (HBM) 1B ESDA / JEDEC JS-001-2014 ESD - Charged Device Model (CDM) C1 ESDA / JEDEC JS-002-2014 MSL - Moisture Sensitivity Level N/A Caution! ESD-Sensitive Device Solderability The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260 C. The use of no-clean solder to avoid washing after soldering is recommended. RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes: * * * * * Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free * SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2019 (c) Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. B, March 29 2019 - 16 of 16 - www.qorvo.com