TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 1 of 16 -
www.qorvo.com
Product Description
Qorvo 2-CP is a packaged high-power X-Band
amplifier fabricated on Qorvo 0.25 um GaN on
SiC process. Operating from 9 to 10 GHz, the TGA2622-
CP achieves 35 W saturated output power, a power-added
efficiency of greater than 43 %, and power gain of 27.5 dB.
The TGA2622-CP is packaged in a 10-lead 15x15 mm bolt-
down package with a Cu base for superior thermal
management. It can support a range of bias voltages and
performs well under CW and pulsed conditions. Both RF
ports are internally DC blocked and matched to 50 ohms
allowing for simple system integration.
The TGA2622-CP is ideally suited for both commercial and
defense applications.
Lead free and RoHS compliant.
Ordering Information
Part No.
TGA2622-CP
9035 W GaN Power Amplifier
1113526
TGA2622-CP Evaluation Board (EVB)
Functional Block Diagram
Applications
• Weather and Marine Radar.
Product Features
• Frequency Range: 9 10 GHz
• PSAT: 45.5 dBm @ PIN = 18 dBm
• PAE: > 43 % @ PIN = 18 dBm
• Power Gain: 27.5 dB @ PIN = 18 dBm
• Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical,
pulsed (PW = 100 µs, DC = 10 %)
• Package Dimensions: 15.2 x 15.2 x 3.5 mm
• Package base is pure Cu offering superior thermal
management
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details
6
7
8
9
10
5
4
3
2
1
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 2 of 16 -
www.qorvo.com
Absolute Maximum Ratings
Parameter
Value / Range
Drain Voltage (VD)
40 V
Gate Voltage Range (VG)
-8 to 0 V
Drain Current (ID)
4.3 A
Gate Current (IG)
See plot page 11
Power Dissipation (PDISS), 85 °C
107 W
IN)
24 dBm
Input Power, CW, VSWR 3:1,
VD = 28 V, 85 °C, (PIN)
24 dBm
Mounting Temperature
(30 Seconds)
260 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions is
not implied.
Recommended Operating Conditions
Parameter
Value / Range
Drain Voltage (VD) pulsed:
PW = 100 µs, DC = 10 %
28 V
Drain Current (IDQ)
290 mA
Gate Voltage (VG)
7 V (Typ.)
Temperature (TBASE)
-40 to 85 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Parameter
Min
Typ
Max
Units
Operational Frequency Range
9
10
GHz
Small Signal Gain
30
dB
Input Return Loss
> 11
dB
Output Return Loss
> 8
dB
Output Power @ PIN = 18 dBm
45.5
dBm
Power Added Efficiency @ PIN = 18 dBm
> 43
%
Power Gain @ PIN = 18 dBm
27.5
dB
Output Power Temperature Coefficient
(25 °C to 85 °C only)
Pulsed
-0.019
dBm/°C
CW
-0.023
Recommended Operating Voltage
20
28
32
V
Test conditions unless otherwise noted: 25 °C, VD = 28 V (PW = 100 µs, DC = 10 %), IDQ = 290 mA, VG = -2.7 V typical.
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 3 of 16 -
www.qorvo.com
Typical Performance – Large Signal (Pulsed)
Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical.
40
41
42
43
44
45
46
47
8.5 9 9.5 10 10.5
POUT (dBm)
Frequency (GHz)
Output Power vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm
Temp. = +25C
IDQ = 290mA
Pulsed: PW=100us, DC=10%
40
41
42
43
44
45
46
47
8.5 9 9.5 10 10.5
POUT (dBm)
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
-40C
+25C
+85C
PIN = 18dBm
VD= 28V, IDQ = 290mA Pulsed: PW=100us, DC=10%
40
41
42
43
44
45
46
47
8.5 9 9.5 10 10.5
POUT (dBm)
Frequency (GHz)
Output Power vs. Freq vs. Input Power
16dBm
17dBm
18dBm
19dBm
20dBm
Temp. = +25CVD= 28 V, IDQ = 290 mA
Pulsed: PW=100 us, DC=10%
26
29
32
35
38
41
44
47
2 4 6 8 10 12 14 16 18 20
POUT (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
-40C
+25C
+85C
VD= 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
Freq. = 9.5GHz
40
41
42
43
44
45
46
47
8.5 9 9.5 10 10.5
POUT (dBm)
Frequency (GHz)
Output Power vs. Frequency vs. IDQ
290mA
725mA
PIN = 18dBm
Temp. = +25C
VD= 28V
Pulsed: PW=100us, DC=10%
31
33
35
37
39
41
43
45
47
2 4 6 8 10 12 14 16 18 20
POUT (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. IDQ
290 mA
725 mA
Temp. = +25C
Freq. = 9.5 GHz
Pulsed: PW=100us, DC=10%
VD= 28V
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 4 of 16 -
www.qorvo.com
Typical Performance – Large Signal (Pulsed)
Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical.
25
30
35
40
45
50
55
8.5 9 9.5 10 10.5
PAE (%)
Frequency (GHz)
PAE vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm
Temp. = +25C
IDQ = 290mA
Pulsed: PW=100us, DC=10%
23
24
25
26
27
28
29
30
8.5 9 9.5 10 10.5
Power Gain (dB)
Frequency (GHz)
Power Gain vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm
Temp. = +25C
IDQ = 290mA
Pulsed: PW=100us, DC=10%
25
30
35
40
45
50
55
8.5 9 9.5 10 10.5
PAE (%)
Frequency (GHz)
PAE vs. Frequency vs. Temperature
-40C
+25C
+85C
PIN = 18dBm
VD= 28V, IDQ = 290mA Pulsed: PW=100us, DC=10%
23
24
25
26
27
28
29
30
8.5 9 9.5 10 10.5
Power Gain (dB)
Frequency (GHz)
Power Gain vs. Frequency vs. Temp.
-40C
+25C
+85C
PIN = 18dBm
VD= 28V, IDQ = 290mA Pulsed: PW=100us, DC=10%
0
10
20
30
40
50
60
2 4 6 8 10 12 14 16 18 20
PAE (%)
Input Power (dBm)
PAE vs. Input Power vs. Temp.
-40C
+25C
+85C
Freq. = 9.5 GHz
VD= 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
19
22
25
28
31
34
37
40
2 4 6 8 10 12 14 16 18 20
Gain (dB)
Input Power (dBm)
Power Gain vs. Input Power vs. Temp.
-40C
+25C
+85C
Freq. = 9.5 GHz
VD= 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 5 of 16 -
www.qorvo.com
Typical Performance – Large Signal (Pulsed)
Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical.
500
1000
1500
2000
2500
3000
3500
4000
8.5 9 9.5 10 10.5
Drain Current (mA)
Frequency (GHz)
Drain Current vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm
Temp. = +25C
IDQ = 290mA
Pulsed: PW=100us, DC=10%
-2
0
2
4
6
8
10
8.5 9 9.5 10 10.5
Gate Current (mA)
Frequency (GHz)
Gate Current vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm
Temp. = +25C
IDQ = 290mA
Pulsed: PW=100us, DC=10%
500
1000
1500
2000
2500
3000
3500
8.5 9 9.5 10 10.5
Drain Current (mA)
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
-40C
+25C
+85C
PIN = 18dBm
VD= 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
-5
0
5
10
15
20
25
30
8.5 9 9.5 10 10.5
Gate Current (mA)
Frequency (GHz)
Gate Current vs. Frequency vs. Temp.
-40C +25C +85C
PIN = 18dBm
VD= 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
500
1000
1500
2000
2500
3000
3500
2 4 6 8 10 12 14 16 18 20
Drain Current (mA)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
-40C
+25C
+85C
Freq. = 9.5 GHz
VD= 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
-5
0
5
10
15
20
25
30
35
40
2 4 6 8 10 12 14 16 18 20
Gate Current (mA)
Input Power (dBm)
Gate Current vs. Input Power vs. Temp.
-40C +25C +85C
Freq. = 9.5 GHz
VD= 28V, IDQ = 290mA
Pulsed: PW=100us, DC=10%
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 6 of 16 -
www.qorvo.com
Performance Plots – Large Signal (CW)
Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical.
40
41
42
43
44
45
46
47
8.5 9 9.5 10 10.5
POUT (dBm)
Frequency (GHz)
Output Power vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm
Temp. = +25C
IDQ = 290mA
CW
40
41
42
43
44
45
46
47
8.5 9 9.5 10 10.5
POUT (dBm)
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
-40C
+25C
+85C
PIN = 18dBm
VD= 28V, IDQ = 290mA
CW
40
41
42
43
44
45
46
47
8.5 9 9.5 10 10.5
POUT (dBm)
Frequency (GHz)
Output Power vs. Freq vs. Input Power
16dBm
17dBm
18dBm
19dBm
20dBm
Temp. = +25C
VD= 28 V, IDQ = 290 mA
CW
26
29
32
35
38
41
44
47
2 4 6 8 10 12 14 16 18 20
POUT (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
-40C
+25C
+85C
Freq. = 9.5 GHz
VD= 28V, IDQ = 290mA
CW
40
41
42
43
44
45
46
47
8.5 9 9.5 10 10.5
POUT (dBm)
Frequency (GHz)
Output Power vs. Frequency vs. IDQ
290mA
725mA
PIN = 18dBm
Temp. = +25CVD= 28V
CW
31
33
35
37
39
41
43
45
47
2 4 6 8 10 12 14 16 18 20
POUT (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. IDQ
290 mA
725 mA
Temp. = +25C
VD= 28V
CW
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 7 of 16 -
www.qorvo.com
Performance Plots – Large Signal (CW)
Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical.
25
30
35
40
45
50
55
8.5 9 9.5 10 10.5
PAE (%)
Frequency (GHz)
PAE vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm Temp. = +25C
IDQ = 290mA
CW
23
24
25
26
27
28
29
30
8.5 9 9.5 10 10.5
Power Gain (dB)
Frequency (GHz)
Power Gain vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm
Temp. = +25C
IDQ = 290mA
CW
25
30
35
40
45
50
55
8.5 9 9.5 10 10.5
PAE (%)
Frequency (GHz)
PAE vs. Frequency vs. Temperature
-40C
+25C
+85C
PIN = 18dBm
VD= 28V, IDQ = 290mA
CW
23
24
25
26
27
28
29
30
8.5 9 9.5 10 10.5
Power Gain (dB)
Frequency (GHz)
Power Gain vs. Frequency vs. Temp.
-40C
+25C
+85C
PIN = 18dBm VD= 28V, IDQ = 290mA
CW
0
10
20
30
40
50
60
2 4 6 8 10 12 14 16 18 20
PAE (%)
Frequency (GHz)
PAE vs. Input Power vs. Temperature
-40C
+25C
+85C
Freq. = 9.5 GHz
VD= 28V, IDQ = 290mA
CW
22
24
26
28
30
32
34
36
38
2 4 6 8 10 12 14 16 18 20
Power Gain (dB)
Frequency (GHz)
Power Gain vs. Input Power vs. Temp.
-40C
+25C
+85C
Freq. = 9.5 GHz
VD= 28V, IDQ = 290mA
CW
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 8 of 16 -
www.qorvo.com
Performance Plots – Large Signal (CW)
Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical.
500
1000
1500
2000
2500
3000
3500
8.5 9 9.5 10 10.5
Drain Current (mA)
Frequency (GHz)
Drain Current vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm
Temp. = +25C
IDQ = 290mA
CW
-5
0
5
10
15
20
25
30
8.5 9 9.5 10 10.5
Gate Current (mA)
Frequency (GHz)
Gate Current vs. Frequency vs. VD
Vd=25V
Vd=28V
Vd=30V
PIN = 18dBm
Temp. = +25C
IDQ = 290mA
CW
500
1000
1500
2000
2500
3000
3500
8.5 9 9.5 10 10.5
Drain Current (mA)
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
-40C
+25C
+85C
PIN = 18dBm
VD= 28V, IDQ = 290mA
CW
-5
0
5
10
15
20
25
30
8.5 9 9.5 10 10.5
Gate Current (mA)
Frequency (GHz)
Gate Current vs. Frequency vs. Temp.
+25C +85C
PIN = 18dBm
VD= 28V, IDQ = 290mA
CW
0
500
1000
1500
2000
2500
3000
3500
2 4 6 8 10 12 14 16 18 20
Drain Current (mA)
Frequency (GHz)
Drain Current vs. Input Power vs. Temp.
-40C
+25C
+85C
Freq. = 9.5 GHz
VD= 28V, IDQ = 290mA
CW
-1
0
1
2
3
4
5
2 4 6 8 10 12 14 16 18
Gate Current (mA)
Frequency (GHz)
Gate Current vs. Input Power vs. Temp.
+25C +85C
Freq. = 9.5 GHz
VD= 28V, IDQ = 290mA
CW
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 9 of 16 -
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Typical Performance – Linearity (CW)
Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical.
-50
-45
-40
-35
-30
-25
-20
9 9.2 9.4 9.6 9.8 10
2f0Output Power (dBc)
Frequency (GHz)
2nd Harmonic vs. Frequency vs. PIN
10dBm
18dBm
VD= 28V, IDQ = 290mA
Temp. = +25C
-90
-80
-70
-60
-50
-40
-30
9 9.2 9.4 9.6 9.8 10
3f0Output Power (dBc)
Frequency (GHz)
3rd Harmonic vs. Frequency vs. PIN
10dBm
18dBm
VD= 28V, IDQ = 290mA
Temp. = +25C
-50
-40
-30
-20
-10
0
10 15 20 25 30 35 40
IM3 (dBc)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Frequency
9.0GHz 9.5GHz 10.0GHz
VD= 28V, IDQ = 290mA, 1MHz Tone Spacing
Temp. = +25C
-80
-70
-60
-50
-40
-30
-20
-10
10 15 20 25 30 35 40
IM5 (dBc)
Output Power per Tone (dBm)
IM5 vs. Output Power vs. Frequency
9.0GHz 9.5GHz 10.0GHz
VD= 28V, IDQ = 290mA, 1MHz Tone Spacing
Temp. = +25C
-50
-40
-30
-20
-10
0
10 15 20 25 30 35 40
IM3 (dBc)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. IDQ
Freq. = 9.5GHz, 1MHz Tone Spacing
Temp. = +25C
V=28V, IDQ=290mA
V=28V, IDQ=725mA
-80
-70
-60
-50
-40
-30
-20
-10
10 15 20 25 30 35 40
IM5 (dBc)
Output Power per Tone (dBm)
IM5 vs. Output Power vs. IDQ
Freq. = 9.5GHz, 1MHz Tone Spacing
Temp. = +25C
V=28V, IDQ=290mA
V=28V, IDQ=725mA
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 10 of 16 -
www.qorvo.com
Typical Performance – Small Signal (CW)
Conditions unless otherwise specified: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical.
15
18
21
24
27
30
33
36
39
8.5 9 9.5 10 10.5
S21 (dB)
Frequency (GHz)
Gain vs. Frequency vs. Temperature
-40C
+25C
+85C
VD= 28 V, IDQ = 290mA
15
18
21
24
27
30
33
36
39
8.5 9 9.5 10 10.5
S21 (dB)
Frequency (GHz)
Gain vs. Frequency vs. IDQ
290mA
725mA
Temp. = +25C
VD= 28V
-30
-25
-20
-15
-10
-5
0
8.5 9 9.5 10 10.5
S11 (dB)
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
-40C
+25C
+85C
VD= 28 V, IDQ = 290mA
-30
-25
-20
-15
-10
-5
0
8.5 9 9.5 10 10.5
S11 (dB)
Frequency (GHz)
Input Return Loss vs. Freq. vs. IDQ
290 mA
725 mA
VD= 28 V
-30
-25
-20
-15
-10
-5
0
8.5 9 9.5 10 10.5
S22 (dB)
Frequency (GHz)
Output Return Loss vs. Freq. vs. Temp.
-40C
+25C
+85C
VD= 28 V, IDQ = 290mA
-30
-25
-20
-15
-10
-5
0
8.5 9 9.5 10 10.5
S22 (dB)
Frequency (GHz)
Output Return Loss vs. Freq. vs. IDQ
290 mA
725 mA
VD= 28 V
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 11 of 16 -
www.qorvo.com
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (JC) (1)
CW, VD = 28 V, IDQ = 290 mA,
TBASE = 85°C, VD = 28 V, ID_Drive = 2.7 A
PIN = 20 dBm, POUT = 44.8 dBm PDISS = 45 W
1.222
°C/W
Channel Temperature (TCH) (under RF drive)
140
°C
Thermal Resistance (JC) (1)
VD = 28 V, IDQ = 290 mA,
(Pulsed: PW = 100 µs, DC = 10 %),
TBASE = 85°C, VD = 28 V, ID_Drive = 3.2 A
PIN = 20 dBm, POUT = 45.6 dBm, PDISS = 52 W
0.788
°C/W
Channel Temperature (TCH) (under RF drive)
126
°C
Notes:
1. Thermal resistance measured to back of package.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Power Dissipation and Maximum Gate Current
0
20
40
60
80
100
120
140
160
180
200
110 120 130 140 150 160 170 180
Maximum Gate Current (mA)
Channel Temperature (°C)
IG_MAX vs. TCH
0
10
20
30
40
50
60
8.5 9 9.5 10 10.5
PDISS (W)
Frequency (GHz)
PDISS vs. Frequency vs. TBASE
-40C
+25C
+85C
PIN = 18dBm
VD= 28V; IDQ = 290mA
CW
0
10
20
30
40
50
60
8.5 9 9.5 10 10.5
PDISS (W)
Frequency (GHz)
PDISS vs. Frequency vs. TBASE
-40C
+25C
+85C
PIN = 18dBm
VD= 28V; IDQ = 290mA
Pulsed: PW=100us, DC=10%
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 12 of 16 -
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Applications Information and Pin Layout
Bias Up Procedure
1. Set ID limit to 3.5 A, IG limit to 25 mA
G
3. Apply +28 V to VD; ensure IDQ is approx. 0 mA
4. Adjust VG until IDQ = 290 mA (VG 7 V Typ.).
5. Turn on RF supply
Bias Down Procedure
1. Turn off RF supply
2. Reduce VG  ensure IDQ is approx. 0 mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
Pin Description
Pad No.
Symbol
Description
1, 5
VG
Gate Voltage; Bias network is required; must be biased from both sides; see
recommended Application Information above.
3
RFIN
DC blocked
2, 4, 7, 9
GND
Must be grounded on the PCB.
6, 10
VD
Drain voltage; Bias network is required; must be biased from both sides; see
recommended Application Information above.
8
RFOUT

TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 13 of 16 -
www.qorvo.com
Evaluation Board (EVB)
NOTES:
(1) Both Top and Bottom Vd and Vg must be biased.
(2) PCB is made from Rogers 4003C dielectric, 0.008 inch thick. 0.5 oz. copper both sides.
Bill of Materials
Reference Des.
Value
Description
Manuf.
Part Number
C1, C2
0.1 uF
Cap, 0402, 50 V, 10%, X7R
Various
C5, C6
10-47 uF
Cap, 1206, 50 V, 20%, X5R (10 V is OK)
Various
C7, C8
0.01 uF
Cap, 0402, 50V, 10%, X7R
Various
R1, R2, R5, R6
10
Res, 0402, 50V, 5%
Various
R3, R4
0
Res, 0402, jumper required for the above EVB design
Various
CP-06 EVB RF OUTRF IN
1119607
REV A
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
R7
R8
R1
R2
R3
R4
R5
R6
P1
P2
Vg
GND VDGND
Vg
GND VDGND
C5
R3
C1
R1
R2
C2
R4
C6
C7
R5
R6
C8
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 14 of 16 -
www.qorvo.com
Assembly Notes
1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully.
2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and
apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the
package.
3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not
control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat
sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz.,
then torque to final value. Use the following tightening pattern:
4. Apply no-flux solder to each pin of the TGA2622-CP. The component leads should be manually soldered, and the
package cannot be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after
soldering is recommended.
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 15 of 16 -
www.qorvo.com
Mechanical Information
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Copper
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2622: Part number
YY: Part Assembly year
WW: Part Assembly week
ZZZ: Serial Number
MXXX: Batch ID
TGA2622-CP
9 – 10 GHz 35 W GaN Power Amplifier
Data Sheet Rev. B, March 29 2019
- 16 of 16 -
www.qorvo.com
Solderability
The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes.
Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260 °C. The use of no-clean
solder to avoid washing after soldering is recommended.
Handling Precautions
Parameter
Rating
Standard
Caution!
ESD-Sensitive Device

1B
-001-2014
Charged Device Model (CDM)
C1
-002-2014
MSLvel
N/A
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical
and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.