2N5086
2N5087 MMBT5086
MMBT5087
PNP General Purpose Amplifier
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
This device is designed for low level, high gain, low noise general
purpose amplifier applications at collector currents to 50 mA.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 50 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 100 mA
TJ, Tst
g
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics T A= 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5086
2N5087 *MMBT5086
*MMBT5087
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Res istance, Junction to Cas e 83.3 °C/W
RθJA Thermal Res istance, Junction to Ambient 200 357 °C/W
CBETO-92
C
B
E
SOT-23
Mark: 2P / 2Q
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N5086 / MMBT5086 / 2N5087 / MMBT5087
2N5086/2N5087/MMBT5086/MMBT5087, Rev A
3
2N5086 / MMBT5086 / 2N5087 / MMBT5087
Electrical Characteristics T A= 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(
BR
)
CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 50 V
V
(
BR
)
CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 50 V
ICBO Coll ector Cutoff Current VCB = 10 V, IE = 0
VCB = 35 V, IE = 0 10
50 nA
nA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 5086
5087
IC = 1.0 mA , V CE = 5.0 V 5086
5087
IC = 10 mA , V CE = 5.0 V 5086
5087
150
250
150
250
150
250
500
800
VCE(sat)Collector-E mitter Saturation V olt age IC = 10 mA, IB = 1.0 m A 0.3 V
VBE(on)Base-Emitter On Volt age IC = 1.0 m A , VCE = 5.0 V 0.85 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 500 µA,VCE= 5.0 V, f= 20 MHz 40 MHz
Ccb Collector-Base Capacitanc e VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF
hfe Small-S ignal Current Gain IC = 1.0 mA, VCE = 5.0, 5086
f = 1.0 kHz 5087 150
250 600
900
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5086
RS = 3.0 k, f = 1.0 kHz 5087
IC = 20 µA, VCE = 5.0 V, 5086
RS = 10 k,5087
f = 10 Hz to 15.7 kHz
3.0
2.0
3.0
2.0
dB
dB
dB
dB
PNP General Purpose Amplifier
(continued)
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=6.734f Xti=3 Eg=1.1 1 Vaf=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2 Isc=0
Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p Itf=.17 Vtf=5
Xtf=8 Rb=10)
Typical Characteristics
Inp ut and Output C apa cit a nce
vs Reverse Bias V oltage
048121620
0
4
8
12
16
20
REV E RS E BIAS VOLT AGE (V )
CAPAC ITANCE (p F)
f = 1 M Hz
Cobo
C ibo
Typ ica l Pulsed C u r ren t Gain
vs Co ll ec tor Cur rent
0.01 0.03 0.1 0.3 1 3 10 30 100
50
100
150
200
250
300
350
I - COLLECTOR CURRENT (mA)
h - TYPIC AL P ULSED CU R RENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CB
C o llecto r - Emitter Satur atio n
Vo ltag e vs C o ll ec tor Cu rrent
0.1 1 10
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CU RRENT (mA)
V - COLLECTO R EMI TTER VOL TAG E ( V)
C
CESAT
β= 10
25 °C
- 4 0 °C
125 °C
B ase-Em itter Saturatio n
Vo ltag e vs C o ll ector Cu r rent
0.1 1 10 50
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BASE EMITT ER VOLTAG E ( V )
C
BESAT
25 °C
- 4 0 °C
125 °C
β= 10
Base Emitter ON Vol tage vs
C o llector Cur rent
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BASE EMITTER ON VOLTA GE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
C o ll ector- C u toff Cur rent
vs A mb ient Temper at u re
25 50 75 100 125
0.01
0.1
1
10
100
T - AM BIE NT TEM P ERATURE ( C)
I - COLLECTOR CURR ENT (nA)
A
CBO
°
V = 40V
CB
2N5086 / MMBT5086 / 2N5087 / MMBT5087
PNP General Purpose Amplifier
(continued)
3
2N5086 / MMBT5086 / 2N5087 / MMBT5087
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Gain Bandwidth Product
vs Collec tor Current
0.1 1 10 100
0
50
100
150
200
250
300
350
I - COLLECTOR C URRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
V = 5V
CE
C
T
Noise F igure vs Frequency
100 1000 10000 1000000
0
1
2
3
4
5
f - F REQUENCY (Hz)
N F - NO IS E FI G U RE (d B)
V = 5V
CE
I = - 250 µA , R = 5.0 k
C S
I = - 500 µA, R = 1.0 k
CS
I = - 20 µA, R = 10 k
CS
Wideb and N o is e Frequency
vs Source Resistanc e
1,000 2,000 5,000 10,000 20,000 50,000 100,000
0
2
4
6
8
R - SOURCE RE SI STANCE ( )
N F - NOI SE F IGU RE (dB)
V = 5V
BANDWIDTH = 15 .7 k Hz
CE
I = 10 µA
C
I = 1 0 0 µA
C
S
E quivalent Input N oise Current
vs C ol lecto r Curren t
0.001 0.01 0.1 1
0.1
0.2
0.5
1
2
5
10
I - COLLECTOR CU RRENT ( mA )
i - E QUIVALENT INP UT NOISE CURRENT (pA/ Hz)
V = - 5.0V
CE
i , f = 100 Hz
n
C
n2
i , f = 1.0 kHz
n
i , f = 10 kHz
n
Equivalent Input Noise Voltage
vs Collecto r Cu rrent
0.001 0.01 0.1 1
0.001
0.002
0.005
0.01
0.02
0.05
0.1
I - C OLLE CTOR CUR R ENT (m A)
e - EQUIV AL ENT INPUT NO ISE VOL TAGE ( V/ Hz)
V = - 5 .0V
CE
C
e , f = 100 Hz
n
e , f = 1.0 kHz
ne , f = 1 0 kHz
n
n2
µ
Po we r Dis sip at ion vs
Ambient Temperature
0 25 50 75 100 125 150
0
125
250
375
500
625
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
Typical Characteristics (continued)
Contour s of Const a nt
Narro w Band Noise Figur e
0.001 0.01 0.1 1
100
1,000
10,000
100,000
1,000,000
I - COLLECTOR CURR ENT (mA)
R - S OU RCE RESI STANCE ( )
BANDW ID TH = 1. 5 kHz
10 dB
C
S
6.0 dB
4.0 dB
10 dB
6.0 dB
4.0 dB
2.0 dB
V = - 5V
f = 10 kHz
CE
1.0 dB
Con t our s of Consta nt
Narrow Band Noise Figure
0.001 0.01 0.1 1
100
1,000
10,000
100,000
1,000,000
I - CO L LECTOR CURRENT (mA)
R - SO U RCE R ESISTANC E ( )
12 dB
C
S
8.0 dB
5.0 dB
3.0 dB
V = - 5V
f = 1 00 Hz
BANDWIDT H = 15 H z
CE
12 dB
8.0 dB
5.0 dB
Cont ours of C ons t a nt
Na rr ow B and No i s e Fi gure
0.001 0.01 0.1 1
100
1,000
10,000
100,000
1,000,000
I - COLLE CT OR CU RR E NT (mA)
R - SOURC E R ESISTANCE ( )
10 dB
C
S
6.0 dB
4.0 dB
V = - 5 V
f = 1.0 kHz
BANDWIDTH = 150 Hz
CE
10 dB
6.0 dB
4.0 dB
Contours o f Consta nt
Na rrow B and Noise Figure
0.01 0.1 1 10
100
200
500
1,000
2,000
5,000
10,000
I - COLLECT OR CURR ENT ( mA )
R - SOURC E RESISTANCE ( )
C
S
6.0 dB
4.0 dB
V = - 5 V
f = 10 MHz
BANDWIDTH
= - 2 kHz
CE
6.0 dB
4.0 dB
2.0 dB
2N5086 / MMBT5086 / 2N5087 / MMBT5087
PNP General Purpose Amplifier
(continued)
3
2N5086 / MMBT5086 / 2N5087 / MMBT5087
Typical Common Emitter Characteristics (f = 1.0 kHz)
PNP General Purpose Amplifier
(continued)
Typi cal Co mmo n Emitter
Characteristics
-25-20-15-10-50
0.4
0.6
0.8
1
1.2
1.4
1.6
V - COLLECTOR-EMITTER VOLTAGE (V)
HARACT ERI STI CS REL . T O VALUE, V =-5.0V
CE
T = -2 5 C
A
I = 1.0 mA
C
CE
hoe
h and h
fe ie
f = 1.0 kHz
°
Typic a l Comm on E mitte r
Characteristics
0.1 0.2 0.5 1 2 5 10
0.01
0.1
1
10
100
I - COLLEC TOR CU R RENT (mA)
HARACTERISTICS REL. TO VALUE , I =1.0mA
C
T = -2 5 C
A
V = -5 .0V
CE
C
hie
f = 1 .0 kHz
°
hfe
hoe
Typical Comm on Emi tter
Characteristics
-60 -40 -20 0 20 40 60 80 100
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
T - A MB IENT TEMPERATUR E ( C)
CHA RACTERISTICS REL. TO VALU E, T = 2 5 C
A
V = -5 .0V
CE
A
hoe
f = 1.0 kHz
hfe
hie
°
°
I = 1.0 mA
C
h and h
fe oe
hie
TO-92 Tape and Reel Data
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130m m x
83mm
Inter med iate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102m m x 51mm
Immed iate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE DESCRIPTION LEADCLIP
DIMENSION QUANTITY
J18Z TO-18 OPTIO N STD NO LEAD CLIP 2.0 K / BOX
J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX
NO EOL
CODE TO-92 STANDARD
STRAIGHT FOR: PKG 92, NO LEADCLIP 2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267m m x 375mm
Inter med iate Box
FSCINT
Label
Customized
Label
333mm x 231m m x 183mm
Inter med iate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Quantity EOL code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
U nit weight = 0 .2 2 gm
Reel weight with components = 1.04 kg
Ammo wei g ht with compon ents = 1 .0 2 kg
Max quan tity per intermediate bo x = 10,000 units
F63TNR
Label
5 Ammo boxes per
Inter med iate Box
Customized
Label
327mm x 158m m x 135mm
Immed iate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATI ON
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Inter med iate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK74 1B019
FS ID: PN 2 22N
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2000
D/C2: QTY2: CPN: N/F: F (F6 3TNR)3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
94 (NON PROELECTRON
SERIES), 96
L34Z TO-92 STANDARD
STRAIGHT FOR: PKG 94 NO LEA DCLIP 2.0 K / BOX
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
TO-92 Tape and Reel Data, continued
September 1999, Rev. B
TO-92 Reeling Style
Configuration: Figure 2.0
Style “A”, D26Z, D70 Z (s/h)
Machine Op tion “A” (H)
Style “E ”, D2 7Z, D 71Z (s/ h)
Machine O ption “E” (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
ITEM DESCRIPTION
Base of Package to Lead Bend
Com p on en t Heig ht
Lead Clinch Height
Com p on en t Ba s e He ig ht
Com p on en t Al ig nm e nt ( sid e/s id e )
Com p on en t Al ig nm e nt ( front/bac k )
Com p on en t Pitc h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0. 09 8 (m ax )
0. 92 8 (+ /- 0.025)
0. 63 0 (+ /- 0.020)
0. 74 8 (+ /- 0.020)
0. 04 0 (m ax )
0. 03 1 (m ax )
0. 50 0 (+ /- 0.020)
0. 50 0 (+ /- 0.008)
0. 15 0 (+ 0 .00 9, -0 . 0 10 )
0. 24 7 (+ /- 0.007)
0. 10 4 (+ /- 0 . 01 0)
0. 01 8 (+ 0 .00 2, -0 . 0 03 )
0. 42 9 (m ax )
0. 20 9 (+ 0 .05 1, -0 . 0 52 )
0. 03 2 (+ /- 0.006)
0. 02 1 (+ /- 0.006)
0. 70 8 (+ 0 .02 0, -0 . 0 19 )
0. 23 6 (+ /- 0.012)
0. 03 5 (m ax )
0. 36 0 (+ /- 0.025)
0. 15 7 (+ 0 .00 8, -0 . 0 07 )
0. 00 4 (m ax )
Note : All dim ensions are in inches.
ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
Ree l Di am e ter D1 13. 9 75 14.025
Arb or Hol e Di am et er (S ta nd ard) D2 1.160 1.2 00
(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Rec ess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flange Inner Width W2 1.630 1.690
Hub to Hub Center Width W3 2.090
Note: All dimensions are inches
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Ha
H1 HO
PO
P2
P1 F1
DO
P Pd
b
d
L1
LS
WO W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User D ire c tion of Feed
SENSITIVE DEVICES
ELECTROSTATIC
D1
D3
Customiz ed Label
W2
W1 W3
F63 TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
TO-92 (FS PKG Code 92, 94, 96)
TO-92 Package Dimensions
January 2000, Rev. B
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
SOT-23 Packagin g
Configuration: Figure 1.0
Components Leader Tape
500mm minimum or
125 emp ty pocket s
Tr ailer Tape
300mm minimum or
75 empty pocke t s
SOT-23 Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOT-23 Packaging Information
Standard
(no flow code) D87Z
Packaging type
Reel Si ze
TNR
7" Dia
TNR
13"
Qty per Reel/Tube/Bag 3,000 10,000
Bo x Dim ension (m m ) 187x107x183 343x343x64
Max qt y per B o x 24,000 30,000
Weight per unit (gm) 0.0082 0.0082
Weight per Reel (kg) 0.1175 0.4006
Human readable
Label
Human Readable Label
Human Readable Label sample
343mm x 342mm x 64mm
Intermediate box for L87Z Opti on
187mm x 107mm x 183mm
Intermediate Box for Standard Option
SOT-23 Unit Orientation
3P 3P 3P 3P
Human Readable
Label
Customized Label
Embossed
Carrier Tape
Antistatic Cover Tape
Packaging Description:
SOT-23
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat A cti vated
Adhesive in nature) primaril y composed of polyester film ,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm di ameter reel. Thi s and some other opt i ons are
described in the Pack aging Information table.
These full reel s are individually labeled and pl aced insi de
a standard intermediate made of recyclable corrugated
brown paper wi th a Fai rchil d l ogo pri nt i ng. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comes i n different sizes depending on the number of parts
shipped.
parts are shipped in tape. The carrier tape is
SOT-23 Tape and Reel Data
September 1999, Rev . C
©2000 Fairchild Semiconductor International
Dimensions are in millimeter
Pkg type
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOT-23
(8mm)
3.15
+/-0.10 2.77
+/-0.10 8.0
+/-0.3 1.55
+/-0.05 1.125
+/-0.125 1.75
+/-0.10 6.25
min 3.50
+/-0.05 4.0
+/-0.1 4.0
+/-0.1 1.30
+/-0.10 0.228
+/-0.013 5.2
+/-0.3 0.06
+/-0.02
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
8mm 7" Dia 7.00
177.8 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 2.165
55 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10.9
8m m 13" Dia 13.00
330 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 4.00
100 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 10.9
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SOT-23 Embossed Carrier Tape
Confi guration: Figure 3.0
SOT-23 Reel Configuration: Figure 4.0
P1 A0
D1
FW
E1
E2
Tc
Wc
K0
T
B0
D0P0 P2
SOT-23 Tape and Reel Data, continued
September 1999, Rev . C
SOT-23 (FS PKG Code 49)
SOT-23 Package Dimensions
September 1998, Rev . A1
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Pa rt Weight per unit (gram): 0.0082
©2000 Fairchild Semiconductor International
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
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PowerTrench
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