2N3553 SILICON NPN VHF POWER TRANSISTOR 671 HIGH GAIN DRIVER FOR 28 V FM APPLICATIONS 2.5 Wat 175 MHz e Minimum Gain 10 dB mechanical data Collector / All dimensions are in 1m TO-39 absolute maximum ratings (Tease = 25 C) Collector-Base Voltage . . 65 V Collector-Base Voltage (Ig =0) - 40 Vv Emitter-Base Voltage . 4V Continuous-Collector Current 0.35 A Continuous-Base Current . 1A RF Power Dissipation Ce ee eee OUT Operating Temperature Range 2. we ee ee ee ee) BK OC to +200 OC Storage Temperature Range . . 2 we ee ee ee ee we) BE OC to +200 OC Safe Operating Region (See Note 1) Figs 1 & 2 Pin Temperature for 10 secs max (See Note 2) 230 C NOTES: 1. See Texas Instruments Application Note 167 on Second Breakdown and Power Transistor Area of Operation. 2. At distances 1/32 inch from hermetic seal. PRELIMINARY DATA SHEET: Suppl d bi published ata. later date. TEXAS INSTRUMENTS 2-305 2N3553 SILICON NPN VHF POWER TRANSISTOR electrical characteristics at 25 C case temperature (untSs otherwise noted) PARAMETER TEST CONDITIONS MIN MAX UNIT LVcEO Collector-Emitter Latching Voltage Ic =200mA, Igpz0 See Note 3 40 Vv LVCER Collector-Emitter Latching Voltage Ic = 200mA, RgEeE= 10092 See Note3 40 Vv lEBO Emitter-Base Cutoff Current Vep=4V. Ic =0 0.1 mA \cEO Collector-Emitter Cutoff Current VcE =30V, ip = 0 . 0.1 mA . VcE=30V, VaE=-1.5V - 0 5 'IcEx Collector-Emitter Cutoff Current VcE=65V. Vge=-1.5V Te = 200 C 1 mA . . I=260mA, VcE=5V 5 50 hee Static Forward Current Transfer Ratio IG=125mA, VoE=5V See Note 4 200 VcE(sat) Collector-Emitter Saturation Voltage Io =250mA, Ig =50mA 1.0 v Common-Base Open-Circuit = = f= Cobo Output Capacitance Vcp = 30 V, le=0, 1 MHz 12 pF Small Signal Common-Emitter = = f= H 4 Ife! Forward Current Transfer Ratio Ic =125mA, Vee = 28V, 100 MHz PouT RF Power Output Vec =28V, Pin = 250 mW of = 175 MHz 2.5 Ww Ne Collector Efficiency Veco = 28V, Pin = 250 mw, f= 175 MHz 50 % NOTES: 3. Measured using pulse technique, duty cycle <2 %, pulse width <5 ps. 4. Measured using pulse technique, duty cycle <2 %, pulse width 300 bs. 2-306 TEXAS INSTRUMENTS 2N3553 SILICON NPN VHF POWER TRANSISTOR Power output - Watts Power output - Watts TYPICAL CHARACTERISTICS TYPICAL POWER OUTPUT vs POWER INPUT TYPICAL POWER OUTPUT vs FREQUENCY a _* Vee =28V Collector efficiency - Power output - Watts Q 0 02 os 05 Power input - Watts Frequency - MHz FIGURE 1 FIGURE 2 TYPICAL POWER OUTPUT vs SUPPLY VOLTAGE TYPICAL hie vs FREQUENCY 4 f 2175 MHz Fin = 220 mw FJ tt a Imaginary hie - & 0 % 20 3B 50 00 200 500 7000. Collector - Emitter supply vottage Frequency - MHz FIGURE 3 FIGURE 4 TEXAS INSTRUMENTS 2-307 2N3553 SILICON NPN VHF POWER TRANSISTOR ABSOLUTE MAXIMUM AREA OF OPERATION SAFE AREA OF OPERATION Tcagg = 25 C THERMAL DERATING 10 4.25 os 1.00 \ 02 5 \ 2075 2 SOs 3 wy E NN 5 $050 5005 & 2 & 028 N ocz 001 5 20 40 400 -50 50 100 150 z Collector - emitter voltage Temperature ~ C FIGURE 5 FIGURE 6 To establish the absolute maximum area of operation for this device it is necessary to apply deratings both for case temperature and voltage, proceed as follows: (1) Establish mean device dissipation and heat sink dimensions to determine the device working case temperature. (2) Read off the Power Derating Factor from Fig. 2 (3) Multiply either voltage or current rating given by Fig. 1 by the Power Derating Factor. This gives the volt-amp. (i.e. power) rating under the given conditions. NOTE: Where the device is subjected to power pulses of shorter duration than the thermal time constant, operation is safe at peak power levels greater than the DC safe area of operation. (In particular under class B or C RF operation, when power pulse widths are a small fraction of the thermal time constant, dissipation is limited only by the maxirnurm thermal resistance. TYPICAL PULSED |hel vs COLLECTOR CURRENT TYPICAL Copo vs COLLECTOR-BASE VOLTAGE 8 15 Vee = ce = SV f = MHz 6 \ 10 N 4 oe ene z 8 2 3 g _ = os de -z 2 0 0 8 05 0.10 0.15 0.20 025 030 0 10 20 30 40 50 60 Collector Current - Amps. Collector - base valtage FIGURE 7 FIGURE 8 TEXAS INSTRUMENTS Ti cannot assume any responsibility for any orcuits shown 2-308 or represent that they are free from patent infringement TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIM, IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBL Typ f Vcc Pin Pout BUcBO BUcEO Gehause type MHz package 2N 3137 T 250 20 0,1 0,4 40 20 TO-39 50 50 2 15 105 60 TO-60 2N 3309 250 25 0,4 2 50 30 TO-39 2N 3375 400 28 1 3 65 40 TO-60 2N 3553 175 28 0,25 2,5 60 40 TO-39 2N 3632 175 28 3,5 13,5 65 40 TO-60 2N 3733 400 28 4,0 10,0 65 40 TO-60 2N 3866 400 28 0,1 1,0 55 30 TO-39 2N 3924 175 13,6 1 4 36 18 TO-39 2N 3926 175 13,6 2 7 36 18 TO-60 2N 3927 175 13,6 4 12 36 18 TO-60 2N 4040 400 28 3 8 60 40 TO-117 2N 4041 400 28 1 3,3 60 40 JO-117 2N 4127 175 25 2,5 13,5 60 40 TO-117 2N 4128 175 25 6 24 60 40 , TO-117 2N 4427 175 12 0,1 1,0 40 20 TO-39 2N 4428 500 28 0,075 0,75 55 35 TO-39 2N 4429 1000 28 0,3 1,0 55 35 TO-117 2N 4430 1000 28 0,795 2,5 55 40 TO-129 2N 4431 1000 28 1,57 5,0 55 40 TO-129 2N 4440 400 28 1,7 5 65 40 TO-60 2N 4933 70 24 3,5 20 70 35 TO-60CE 2N 5016 400 28 5 15 65 30 TO-60CE 2N 5026 50 28 2,5 25 90 50 TO-60CE 2N 5070 30 28 25PEP 65 30 TO-60CE 2N 5071 70 28 3 24 65 30 TO-60CE 2N 5090 400 28 0,2 1,2 55 30 TO-60 2N 5102 136 24 6 15 90 50 TO-60CE 2N 5109 CATV 40 20 TO-39 2N 5179 CATV 20 12 TO-72 2N 5687 50 12,5 0,1 1,5 40 20 TO-39 2N 5688 50 12,5 0,25 5 40 20 TO-117 2N 5689 50 12,5 1,0 10 60 40 TO-117 2N 5690 50 12,5 2,5 25 50 30 TO-128 2N 5691 50 12,5 6,3 40 50 30 DIA-4L 2N 5697 470 12,5 0,05 0,25 40 18 TO-39 2N 5698 470 12,5 0,25 1,0 40 18 TO-131 2N 5699 470 12,5 1,0 3,5 40 18 TO-129 2N 5702 175 12,5 0,38 1,5 36 18 TO-39 2N 5703 175 12,5 0,475 3,0 36 18 TO-117 2N 5704 175 12,5 3,75 12,0 36 18 TO-117 2N 5705 175 12,5 10 25 36 18 TO-128 2N 5707 28 28 20PEP 70 50 TO-128 2N 5708 28 28 40PEP 70 50 TO-128 2N 5709 28 28 80PEP 70 50 DIA-4L 2N 5710 150 12,5 0,024 0,3 40 20 TO-39 2N 5711 150 12,5 0,15 1,5 60 36 TO-117 2N 5712 150 12,5 1,25 5,0 60 40 TO-117 TEXAS INSTRUMENTS 3-13