DOWER [MOS [= IRF252,253 FIELD EFFECT POWER TRANSISTOR 200, 160 VOLTS RDS(ON) = 0.12 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power s supplies, inverters, converters and solenoid/relay drivers. CASE STYLE TO-204AE (TO-3) Also, the extended safe operating area with good linear DIMENSIONS ARE IN INCHES AND (MILLIMETERS) transfer characteristics makes it well suited for many linear Osan 4 = 388(0.09) MAX applications such as audio amplifiers and servo motors. wae bow med SEATING PLANE Features + __t ete vee tae 0,063(1.60} . mee .426(10,82) MIN. Polysilicon gate Improved stability and reliability soiree) OE e No secondary breakdown Excellent ruggedness aKa gersii7.18 . . L 0.650(16.51} Ultra-fast switching Independent of temperature + Voltage controlled High transconductance CASE TEMP, Teel 1 . . . POINT 1.873(39.96) e Low input capacitance Reduced drive requirement 2018.00)~ : | i] x e Excellent thermal stability Ease of paralleling DRAIN [92250572] DRAIN 0.182(4.08) pia, 0,208(5.21) (CASE) 0,15(3.84) 2 rlOLES 0.440(11.18) 0.420( 10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF252 IRF253 UNITS Drain-Source Voltage Vpss 200 150 Volts Drain-Gate Voltage, Res = IMO. Vpar 200 150 Volts Continuous Drain Current @ Tco= 25C Ip 25 25 A To = 100C 16 16 A Pulsed Drain Current lpm 100 100 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ To = 25C Pp 150 150 Watts Derate Above 25C 1.2 1.2 WC Operating and Storage Junction Temperature Range Ty, Tsta ~-55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 0.83 0.83 C/W Thermal Resistance, Junction to Ambient Rea 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 147 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF252 BVpss 200 ~ Volts (V@g = OV, Ip = 250 uA) IRF253 150 _ Zero Gate Voltage Drain Current loss (Vps = Max Rating, Vag = OV, To = 25C) _ _ 250 HA _ (Vpg = Max Rating, 0.8, Vag = OV, To = 125C) - _ 1000 OVaee eoovy 8 Current loss _ _ +100 nA on characteristics* | Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vps = Vas; Ip = 250 wA) On-State Drain Current _ _ (Vag = 10V, Vpg = 10V) ID(ON) 25 A Static Drain-Source On-State Resistance _ (Vgg = 10V, Ip = 16A) Rps(on) 0.10 0.12 Ohms Forward Transconductance (Vpg = 10V, Ip = 16A) Ofs 7.2 10 _ mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 2800 3000 pF Output Capacitance Vps = 25V | Coss _ 520 1200 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 120 500 pF switching characteristics* Turn-on Delay Time Vps = 90V td(on) _ 20 ns Rise Time Ip = 16A, Veg = 15V tr _ _ ns Turn-off Delay Time ReGen = 500, Res = 12.50 ta(off) _ 90 _ ns Fall Time (Res (EQuiv.) = 100) tf _ 65 ns source-drain diode ratings and characteristics* Continuous Source Current Is 25 A Pulsed Source Current Ism _ _ 100 A Diode Forward Voltage Vsp _ 12 1.8 Volts (To = 25C, Vag = OV, Ig = 25A) Reverse Recovery Time try _ 345 _ ns (Is = 30A, dls/dt = 100A/us, To = 125C) Qrr _ 45 uC *Pulse Test: Pulse width <= 300 us, duty cycle = 2% 800 400 200 a. Ws a = 80 = <= 60 t r-4 ws f 3 z 4 = OPERATION IN THIS AREA. 9 MAY BE LIMITED BY Rosin) a SINGLE PU Te225C RF252 6 810 Vog- DRAIN--SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 2 4 20 40 60 80100 200 400 600 1000 2.4 CONDITIONS: Rps(on CONDITIONS: tp = 16 A, Vgg = 10V 2.2 2.0 Vgg(TH) CONDITIONS: Ip = 250nA, Vg = Vag 1.8 1.6 1.4 1.2 1.0 0.8 0.6 Rosion) AND Vest) NORMALIZED 0.4 0.2 0 0 40 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion; AND Vastu) VS. TEMP. 40 120 148 160.