SEMI C ONDUG TOR TOPAZ SEMICONDUCTOR OSE D ; REEEEED OOOLOOb 1 Zs Boze $D210,$D244,SD212, $D243,SD214,SD215 N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION TO-206AF (TO-72) Package] SD210DE $D211DE $0212DE 8D213DE $D214DE 8D215DE Shorting Rings SD210DE/R | SD2ZT1DE/R | SD212DE/R | SD21i3DE/R | SO214DEIR | SD215DE/R Sorted Chips in Carrlers SD210CHP | SD211CHP | SD212CHP | SD2Z13CHP | SD214CHP | SD21SCHP FEATURES APPLICATIONS Hi High Input to Output Isolation 120dB typical H +30V Switch DriversSD210, SD211 @ Low feedthrough and feedback transients @ +10V Analog Switches $D214, $D215 @ Low Inter-electrode Capacitances @ +5V Analog SwitchesS$D212, SD213 ABSOLUTE MAXIMUM RATINGS (Ta = +25C unless otherwise noted) PARAMETER $D210 SD2i1 SD212 S$D213 $D214 SO2i5 UNIT Breakdown Voltages Vps +30 +30 410 +10 Vso +10 +10 +10 +10 Vos +30 +30 0- #15 +18 Vsp 415 475 #15 4-18 Ves #40 -15 +40 = -15 +25 +26 Ves +40 -03 +40 -0.3 +25 +25 Veo +40 ~30 +40 -15 +25 +26 SCHEMATIC DIAGRAM Bod (%) y Gate Case. B (1) Source Body Internally cannected to Case. Diode protection on $D211/SD213/SD215 only. +20 +20 +25 +26 +40 +20 +20 +25 +25 26 +30 -0.3 +30 25 +30 Vde Vde Vde Vde Vde Vde Vde Vde Vde Vde Ip Continuous Drain Current ............ 0.0 e cee eee 50mA Py Power Dissipation (at or below Tg = +25C)......... 1.2W Linear Derating Factor ....... 0... cece ence eee 12mWIPG Pp Power Dissipation (at or below Ta = +25C)....... 300mW Linear Derating Factor ......... ccc se ser eneee 3.0OmMWi C Tj; Operating Junction Temperature Range .... 65 to +126C Ts Storage Temperature Range ...,......000 66 to +176C PACKAGE DIMENSIONS (TO-72) TO-206AF (See Package 3) CHIP CONFIGURATION PAD 1Source 2Drain 3Gate 4~ Diode For $D211/213/215CHP bond Gate and Diode to common point. Body is backside contact. Dimensions: .022 .025 x .013 inches 3-50 0-88-6 TOPAZ SEMICONDUCTOR OSE D Q sossean Oo0100? 3 i - TBS'AS . TFA Z $D210, $D214, $D242, SEMICONDUCTOR $D213, SD214, SD245 ELECTRICAL CHARACTERISTICS (Ta = +25C unless otherwise noted) $D210, $D211 $D212, $D213 SD2t4, SD215 TEST # PARAMETER UNIT CONDITIONS MIN | TYP | MAX | MIN | TYP | MAX | MIN | TYP | MAX 1 30 | 35 Vo lip = 1A |_| Drain-Source Vas = Ves = 0 2 BYps Breakdown Voltage | 10 | 25 10 | 25 20 | 25 Vv Ip = 10nA Ves = Ves = -5V | Source-Drain Ig = 10nA 3 BYsp Breakdown Voltage | 10 10 20 Vs | Yao = Vep = -5V Drain-Substrate {fp = 10nNA, Veg = 0 4 BVps" Breakdown Voltage | 15 16 25 V_ | Source OPEN Source-Substrate Ig = 10nA, Veg = 0 5 BVsp Breakdown Voltage | 15 15 25 Vv | Drain OPEN 6 10 19 MA |Vps=10V Vag = Veg i Drain-Source = -5V 7/2 ID (ot OFF Current 10 | nA | Vpg = 20V | Fe = 8 5 10 10 nA Vsp =10V Veo = Veo I Source-Drain = 9 Is (otf OFF Current 10 nA | Vgp = 20V | 10 | D210 0.1 nA 11 | $0212 0.1 nA_| Vag = +40V | 12 | Gate-Body } SD214 0.1 nA Vos = Ysa | 13 | ops Leakage | SD211 10 BA = 14 Current $0213 10 BA | Vop = 26V 15 | $0215 10 | nA [Vgg=30V mm Gate Threshold Vos = Ves: 16 Ves (th) Voltage 05 | 4.0 | 20 | 04 20 | 041] 10 | 20 Vip = 1pA,Vsgp =0 7 Drain-Source 50 | 70 50 | 70 50 | 70 | ohms | Veg = 5V Ip = imA ris} [ps cor) ON Resistance 30 | 45 30 | 45 30 | 45 [| ohms [Vgg=10V |Vsg=0 Vos = 10V, Common-Source Ip = 20mMA 19 Ofs Forward Transcond. | 10 | 12 10 | 12 10 | 12 mmhos| f = 1KHz,Vsg = 0 | Gate Node 20 C(gs + gd+gb) Capacitance 24 | 36 24 |) 35 24 | 35 pF Drain Node Vog = 10V 21 2 C(gd + db) Capacitance 13 4 46 4.3 1 15 13 1 15 pF ris Source Node Vas = Vas = -15V 22 3 (gs + sb) Capacitance 35 | 4.0 3.5 | 4.0 35 | 4.0 pF am Reverse Transfer f = 1MHz 23 (dq) Capacitance 0.3 | 05 03 | 05 0.3 | 05 pF 24 taton) Tum ON Delay Time 07 | 10 07 | 1.0 0.7 | 1.0 J Vpp = 5V, V, =10V 25| |t, Rise Time 08 | 1.0 os | 10 08 | 10 | nSec Glon) | R= 6802, Rg=512 26 toff Turn OFF Time 10 10 10 3-51 TOPAZ SEMICONDUCTOR OSE Dd BJ sosseen oo0100a 5 i TOIFAZ SEMICONDUCTOR SWITCHING TIMES TEST CIRCUIT INPUT PULSE t, <0.5 nSEC PULSE WIDTH 100 nSEC VgO SAMPLING OSCILLOSCOPE t, < 0.36 nSEC Rig > 1MQ Cjq <2.0 DF oJ OSCILLOSCOPE = $D210, $0241, $D242 $D2413, $D214, $D245 7 -3525 TEST WAVEFORMS : Veton) Vin 0 Yoo eo Vout =0V 10% TYPICAL PERFORMANCE CHARACTERISTICS (T, = +25C unless otherwise specified) DRAIN-SOURCE ON RESISTANCE GATE-SOURCE VOLTAGE Ips 1mA, PULSE 80ySEC % 88 8 20 Tas tpg-DRAIN-SOURCE ON RESISTANCE(chms) 3 to 0 20 40 60 80 10 12 4 16 Vag-GATE-SOURCE VOLTAGE-(VOLTS} GATE-SOURCE THRESHOLD VOLTAGE vs z SOURCE-BODY VOLTAGE a 3 a0 1 Vps* Vas g Ip= 1-008 g 3 > Q 20 Ll = = g 2 10 2 3 # 4 to a) 25 50 76 10 y Vgp~SOURCE-BODY VOLTAGEVOLTS) Ip(ony-ON DRAIN CURRENT(mA) ON DRAIN CURRENT GATE-SOURCE VOLTAGE Vogt 10V, PULSE TEST 1% DUTY CYCLE lpg Taz +128C 0.1 0 10 20 30 40 60 60 7.0 Vgs~GATE-SOURCE VOLTAGE-(VOLTS) FORWARD TRANSCONDUCTANCE %,~ FORWARD TRANSCONDUCTANCE(mmho} ao 80 12 16 YsS ON DRAIN CURRENT Vgp= 0 SPs PULSE TEST eOuSEG OUTY 20 24 ip-DRAIN CURRENT(mA} 7a 32 3-52