TO-202AB
Typ e 1
TO-92
Typ e 70
DO-214AA
Surfac e Mount
DO-15X
Axial Lead
Do not us e mount ing tab
or ce nter lead,
elec trica lly conn ected
Teccor Electronics 9-1 SIDAC
(972) 580-7777
SIDAC
(95 - 330 Volts)
9
General Description
The Sidac is a silicon bila teral voltage tr iggered swit ch with
gre ater power-h andling capabil ities than standard diacs. U pon
application of a voltag e exceedi ng the Sidac breakover volta ge
point, the Sidac switches on through a negative resistance region
to a low on-state voltage. C onduction will continue unti l the cur-
ren t is interrupte d or drops belo w the m ini mum hold ing current of
the device.
Tecc or offers the complete voltage range (95- 330) over three di f-
ferent packages:
• TO-92 (95-280 volts)
• Axial lead DO-15X (95-280 volts)
• Surface Mount DO-214AA (95-280 volts)
• TO-202AB (190-330 volts)
Teccor’s Sidacs feature glass passivated jun cti ons to ensu re a
rugged and dependable devic e capable o f withstanding harsh
environments.
Va riat ions of de vices covered in t his data s heet ar e avail able for
custom design a pplications. P lease consult the factory for more
information.
Applications
• High voltage lamp ignitors
• Natural gas ignitors
• Gas oil ignitors
• High voltage power supplies
• Xenon ignitors
• Over voltage prot ector
• Pulse generator s
• Fluorescent lighting ignitors
• HID l ighting ignitors
Features
• AC cir cuit oriented
• Glass-passivated junctions
• High surge current capability
Electrical Specifications
SIDAC 9-2 Teccor Electronics
(972) 580-7777
General Notes
• All measurements are made at 60Hz with a resistive load at an
am bient temperature of +25°C unless other wise specif ied.
• Storage temperature ra nge (TS) is -65°C to +150°C.
•The case (T
C) or lead (TL) tempera ture is meas ured as shown on
the dimensional outline drawings. See “Package Dimensions” sec-
tion of this catalog.
• Junction temperature ran ge (TJ) is -40°C to +125°C.
• Lead solder t emperature i s a maximum of +230°C fo r 1 0 seconds
maximum; ≥ 1/16" (1.59mm) from case.
Electrical Specification Notes
(1) See Figure 9.6 for VBO change vs junction temperature.
(2) See Figure 9.7 for IBO vs junction temperature.
(3) See Figure 9.2 for IH vs case temperature.
(4) See Figure 9.14 for test circuit.
(5) S ee Figu re 9.1 for more than one f ull cycle ra ting.
(6) RθJA for TO-202 Type 23 and Type 41 is 70°C/watt.
(7) TC ≤ 90°C for TO-92 Sidac and TC ≤ 105°C for TO-202 Sidacs.
TL ≤ 100°C for DO-15X and TL ≤ 90°C f or DO-2 1 4AA.
(8) S ee Figu re 9.15 for clarification of Sidac operation.
(9) F or best Sidac operation, the load impeda nce should be near or
less than switching resistance.
(10) Teccor's new, improved series of sidacs is designed to ensure
good commutation at higher switching frequencies as required in ignitor
circuits for high intensity discharge (HID) lighting. A typical circuit
for a metal halide lamp ignitor is shown in the schematic, Figure
9.3 . Wit h p rop er co mpon ent s el ec tion t his c ircu i t wi l l p rod uce thr e e
pulses for ignition of Osram lamp types such as HQI-T70W, HQI-
T150W, and HQI-T250W w hich require a minimum of three pulses
at 4k V ma gn itud e an d >1 µs duration each at a minimum repetition
rate of 3.3kHz.
Type
Part No. IT(RMS) VDRM VBO IDRM IBO
TO-92
E Package DO-15X
G Package TO-202AB
F Package DO-214AA
S Package
On-State
RMS Current
TJ≤125°C
50/60Hz
Sine Wave
(7) (8)
Amps
Repetitive
Peak
Off-State
Voltage
Volts
Breakover Voltage
50/60Hz Sine Wave
(1)
Volts
Repetitive
Peak
Off-State
Current
50/60Hz
Sine Wave
V=VDRM
µAmps
Breakover
Current
50/60Hz
Sine Wave
µAmps
See “Package Dimensions” section for variations. MAX MIN MIN MAX MAX MAX
K1050E70 K1050G K1050S 1.0 ±90 95 113 510
K1100E70 K1100G K1100S 1.0 ±90 104 118 510
K1200E70 K1200G K1200S 1.0 ±90 110 125 510
K1300E70 K1300G K1300S 1.0 ±90 120 138 510
K1400E70 K1400G K1400S 1.0 ±90 130 146 510
K1500E70 K1500G K1500S 1.0 ±90 140 170 510
K2000E70 K2000G K2000F1 K2000S 1.0 ±180 190 215 510
K2200E70 K2200G K2200F1 K2200S 1.0 ±180 205 230 510
K2400E70 K2400G K2400F1 K2400S 1.0 ±190 220 250 510
K2401F1 1.0 (10) ±190 220 250 510
K2500E70 K2500G K2500F1 K2500S 1.0 ±190 240 280 510
K3000F1 1.0 ±190 270 330 510
SIDAC
Teccor Electronics 9-3 SIDAC
(972) 580-7777
V-I Characteristics Figure 9.1 Peak Surge Current vs Surge Current Duration
IHVTM ITSM RSdVq/dt dv/dt di/dt
Dynamic
Holding Current
50/60Hz
Sine Wave
R = 100Ω
(3 ) (4 )
mAmps
Peak
On-State
Voltage
IT = 1 Amp
Volts
Max
Peak One
Cycle Surge
Current
50/60Hz Sine Wave
(Non-Repetitive)
(5)
Amps
Switching
Resistance
50/60Hz Sine Wave
(9)
kΩ
Critical
Rate-of-Rise
of Turn-off
Voltage at
8kHz
Volts/µSec
Critical
Rate-of-Rise
of Off-State
Voltage at
Rated VDRM
TJ ≤ 100°C
Volts/µSec
Critical
Rate-of-Rise
of On-State
Current
Amps/µSecPackage 60Hz 50Hz
TYP MAX E G F S MIN MIN MIN TYP
60 150 1.5 1.5 1.5 20 16.7 0.1 20 1500 150
60 150 1.5 1.5 1.5 20 16.7 0.1 20 1500 150
60 150 1.5 1.5 1.5 20 16.7 0.1 20 1500 150
60 150 1.5 1.5 1.5 20 16.7 0.1 20 1500 150
60 150 1.5 1.5 1.5 20 16.7 0.1 20 1500 150
60 150 1.5 1.5 1.5 20 16.7 0.1 20 1500 150
60 150 1.5 1.5 3.0 1.5 20 16.7 0.1 20 1500 150
60 150 1.5 1.5 3.0 1.5 20 16.7 0.1 20 1500 150
60 150 1.5 1.5 3.0 1.5 20 16.7 0.1 20 1500 150
60 150 3.0 20 16.7 2.0 42 1500 150
60 150 1.5 1.5 3.0 1.5 20 16.7 0.1 20 1500 150
60 150 3.0 20 16.7 0.1 20 1500 150
RSVBO VS
–()
ISIBO
–()
--------------------------------=
THERMAL RESISTANCE (STEADY STATE)
RθJC [RθJA] °C/W (TYPICAL)
EGF (6)S
35 [95] 18 [75] 7 [45] 30 [85]
1.0 10 100 1000
1.0
2.0
4.0
6.0
8.0
10
20
40
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum Rated
Value at Specified Junction Temperature
BLOCKING CAPABILITY MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL
OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED VALUE.
Sur
g
e Current Duration - Full C
y
cles
Peak Surge (Non-Repetitive)
On-State Current [I(TSM)] - Amps
100
Electrical Specifications
SIDAC 9-4 Teccor Electronics
(972) 580-7777
Figure 9.2 Normalized DC Holding Current vs Case/Lead Temperature
Figure 9.3 Typical Metal Halide Ignitor Circuit
Figure 9.4 Repetitive Peak On-State Current (I TRM) vs Pulse Width at
Various Frequencies
Figure 9.5 Max imum Allowable A mbient Temperature vs On-State
Current
Figure 9.6 Norm alized VBO Change vs Junction Tem perature
Figure 9.7 Normalized Repetitive Peak B reakover Current vs Junction
Temperature
0
.5
1.0
2.0
1.5
-15-40 +25 +65 +105 +125
Case Temperature (TC) -
˚
C
IH
IH(TC=25
˚
C)
Ratio of
BALLAST
K2401F1
220V/240V
50/60Hz
Typical Metal Halide Ignitor Circuit
METAL
HALIDE
LAMP
H.V.
STEP-UP
TRANSFORMER
5.6K - 8.2K
5W
5 - 6µH
0.1 - 0.15 µF
0.22 - 0.33 µF
di/dt Limit Line
0.6
0.8
4
2
4
6
8
10
20
40
60
80
100
200
400
600
2 x 10-3
68
1 x 10-2
2468
1 x 10-1
24681
1
Pulse base width (to) - mSec.
Repetitive Peak On-State Current (ITRM) - Amps
VBO Firing
Current
Waveform
Non-Repeated
Repetition Frequency f=5 Hz
f=10 Hz
f=100 Hz
f=1 kHz
f=5 kHz
f=10 kHz
f=20 kHz
TJ=125ºC Max
to
ITRM
l/f
Non-RepeatedNon-Repeated
0 0.2 0.4 0.6 0.8 1.0
20
40
60
80
100
120
140
25
RMS On-State Current [IT(RMS)] - Amps
Maximum Allowable Ambient Temperature (TA) - ˚C
CURRENT WAVEFORM: Sinusoidal - 60 Hz
LOAD: Resistive or Inductive
FREE AIR RATING
TO-202 TYPE 1
TO-92 and DO-214
TO-202 TYPE 23 & 41
-12
-20 0 +20 +40 +60 +80 +100 +120
-10
-8
-6
-4
-2
0
+2
+4
-40
+25
Junction Temperature (TJ) - ˚C
Percentage of VBO Change - %
+140
20 30 40 50 60 8070 90 100 110 120
1
2
3
4
5
6
7
8
9
Junction Temperature (TJ) -
˚
C
Repetitive Peak Breakover
Current (IBO) Multiplier
V=VBO
130
SIDAC
Teccor Electronics 9-5 SIDAC
(972) 580-7777
Figure 9.8 On-State Current vs On-State Vo ltage (Typical)
Figure 9.9 Power Dissipation (Typical) vs On-State C u rrent
Figure 9.10 Comparison of Sidac vs SCR
Figure 9.11 Ignitor Circuit (Low Voltage Input)
Figure 9.12 Typical High Pressure Sodium Lamp Firing Circ uit
Figure 9.13 Xenon Lamp Flashing Circuit
00.8 1.21.0 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
0
1
2
3
4
5
6
7
8
9
Positive or Negative Instantaneous On-State Voltage (vT) - Volts
Positive or Negative Instantaneous
On-State Current (iT) - Amps
TL =25˚C
TO-202 "F" Package
TO-92, DO-214AA & DO-15X
"E", "S" and "G" Packages
0.2 0.4 0.6 0.8 1.0
0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: See Figure 9.15
0.4
0.8
1.2
1.6
0.2
0.6
1.0
1.4
1.8
2.0
2.2
RMS On-State Current [IT(RMS)] - Amps
Average On-State Power Dissipation
[PD(AV)] - Watts
TO-202 "F" Package
"E", "S" & "G" Packages
TO-92, DO-214AA & DO-15X
100-250
VAC
60 Hz
100-250
VAC
60 Hz
SCR SIDAC
4.7 µF
100V
10 µF
50V
24 VAC
60 Hz
4.7 µF
100V
½ W K1200E
SIDAC
200V
H.V.
IGNITOR
1.2 µF
4.7 kΩ
- +
- +
+
-
SIDAC
120 VAC
60 Hz 16 mH
3.3 KΩ
0.47µF
400V
BALLAST
SIDAC
220 VAC
60 Hz
7.5 KΩ
0.22µF
BALLAST
LAMP
120 VAC 220 VAC
LAMP
- +
+
-
XENON LAMP
K2200F1
10 µF
2w
120VAC
60Hz
10 µF
450V 4KV
.01µF
400V
20 MΩ
SIDAC
200-
400V
100Ω
250V
TRIGGER
TRANSFORMER
20:1
Electrical Specifications
SIDAC 9-6 Teccor Electronics
(972) 580-7777
Figure 9.14 Dynamic Holding Current Tes t Circuit f or Sidacs Figure 9.15 Basic Sidac Circuit
Figure 9.16 Relax ation oscillator Using a Sidac
Figure 9.17 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Sw itching Requirements
100-250
VAC
60 Hz
SCOPE
PUSH
TO
TEST S1 SWITCH TO TEST IN
EACH DIRECTION
100 Ω
1%
DEVICE
UNDER
TEST
S1
SCOPE INDICATIONS
TRACE STOPS
IH
IPK
LOAD
100-250
VAC
60 Hz IH
VBO VBO
VBO
120-145
˚
CONDUCTION
ANGLE
IH
IH
LOAD CURRENT
VDC(IN) ≥ VB0 VC
ILRL
R
SIDAC
(a) Circuit
Rmax ≤VIN - VBO
IBO
Rmin ≥VIN - VTM
IH
(
MIN
)
(b) Waveforms
VBO
VC
IL
t
t
C
VCE MONITOR
100 mH
IC MONITOR
+
-
RS = 0.1 Ω
TEST CIRCUIT
VBB1 =10 V
+
-
VBB2 =0
RBB2 =
100Ω
RBB1 =
150Ω
2N6127
(or equivalent)
50Ω
50Ω
INPUT
(See Note B)
TIP-47
VCC = 20 V
VOLTAGE AND CURRENT WAVEFORMS
INPUT
VOLTAGE 0 V
5 V
0.63 A
0
SIDAC VBO
10 V
VCE(sat)
tw ≈ 3 ms
(See Note A)
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
100 mS
tw
NOTE A: Input pulse width is increased until ICM = 0.63A.
NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destro
y
ed.
