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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BC817 / BC818 NPN Epitaxial Silicon Transistor Features 3 * Switching and Amplifier Applications * Suitable for AF-Driver Stages and Low Power Output Stages * Complement to BC807 / BC808 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Marking Package Packing Method BC81716MTF 8FA SOT-23 3L Tape and Reel BC81725MTF 8FB SOT-23 3L Tape and Reel BC81740MTF 8FC SOT-23 3L Tape and Reel BC81816MTF 8GA SOT-23 3L Tape and Reel BC81825MTF 8GB SOT-23 3L Tape and Reel BC81840MTF 8GC SOT-23 3L Tape and Reel Note: 1. Affix "-16,-25,-40" means hFE classification. Affix "-M" means the matte type package. Affix "-TF" means the tape and reel type packing. Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value BC817 50 BC818 30 BC817 45 BC818 25 Unit VCBO Collector-Base Voltage V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V V IC Collector Current (DC) 800 mA TJ Junction Temperature 150 C TSTG Storage Temperature -65 to +150 C (c) 2002 Fairchild Semiconductor Corporation BC817 / BC818 Rev. 1.1.0 www.fairchildsemi.com 1 BC817 / BC818 -- NPN Epitaxial Silicon Transistor November 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Value Unit Power Dissipation 310 mW Derate Above 25C 2.48 mW/C Thermal Resistance, Junction-to-Ambient 403 C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics(2) Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions BVCEO Collector-Emitter Breakdown Voltage BC817 BVCES Collector-Emitter Breakdown Voltage BC817 BVEBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 ICES Collector Cut-Off Current VCE = 25 V, VBE = 0 IEBO Emitter Cut-Off Current VEB = 4 V, IC = 0 hFE1 hFE2 BC818 BC818 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) fT Cob IC = 10 mA, IB = 0 IC = 0.1 mA, VBE = 0 Min. Typ. Max. 45 V 25 50 V 30 5 VCE = 1 V, IC = 100 mA 100 VCE = 1 V, IC = 300 mA 60 Unit V 100 nA 100 nA 630 IC = 500 mA, IB = 50 mA 0.7 V Base-Emitter On Voltage VCE = 1 V, IC = 300 mA 1.2 V Current Gain Bandwidth Product VCE = 5 V, IC = 10 mA, f = 50 MHz Output Capacitance VCB = 10 V, f = 1 MHz 100 MHz 12 pF Note: 2. Pulse test: pulse width 300 s, duty cycle 2% hFE Classification Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60 ~ 100 ~ 170 ~ (c) 2002 Fairchild Semiconductor Corporation BC817 / BC818 Rev. 1.1.0 www.fairchildsemi.com 2 BC817 / BC818 -- NPN Epitaxial Silicon Transistor Thermal Characteristics(1) BC817 / BC818 -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics 1.0 600 Vbe(on), Base-Emitter On Voltage,[V] 500 hfe, Current Gain VCE = 1V BC81725MTF Vce=1V 400 300 200 o -25 C o 25 C o o 125 C 75 C 100 0 1 10 100 0.9 0.8 25 C 0.7 0.6 0.5 0.4 0.3 1000 o 125 C o 75 C o 1 10 100 Collector Current, [mA] Collector Current, [mA] Figure 1. DC Current Gain Figure 2. Base-Emitter On Voltage 1.2 Vbe(sat), Saturation Voltage,[V] 0.4 Vce(sat), Saturation Voltage,[V] Ic=10Ib Ic=10Ib o 125 C 0.3 o 75 C o 25 C 0.2 o -25 C 0.1 0.0 10 100 1.0 25 C 0.8 o 125 C 0.6 o 75 C 0.4 10 1000 o o -25 C 100 1000 Collector Current, [mA] Collector Current, [mA] Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage PD - Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 O Temperature, [ C] Figure 5. Power Dissipation vs Ambient Temperature (c) 2002 Fairchild Semiconductor Corporation BC817 / BC818 Rev. 1.1.0 www.fairchildsemi.com 3 BC817 / BC818 -- NPN Epitaxial Silicon Transistor Physical Dimensions 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 6. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (c) 2002 Fairchild Semiconductor Corporation BC817 / BC818 Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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