APTM50AM24SG
APTM50AM24SG
–
Rev 2 July, 2006
www.microsemi.com 1
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6
OUT
S1
G2
S2
G1
Q2
0/VBUS
VBUS
Q1
OUT
VBUS
S1
G1 0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Ma
x
ratings Unit
VDSS Drain - Source Breakdown Voltage 500 V
Tc = 25°C 150
ID Continuo us Drain Current Tc = 80°C 110
IDM Pulsed Drain current 600
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 28 mΩ
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 24 A
EAR Repetitive Avalanche Energy 30
EAS Single Pulse Avalanche Energy 1300 mJ
VDSS = 500V
RDSon = 24mΩ typ @ Tj = 25°C
ID = 150A @ Tc = 25°C
Applicatio
n
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstandi ng perfor mance at hi gh freque nc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
P
hase leg
Series & parallel diodes
M
OSFET Power Module
APTM50AM24SG
APTM50AM24SG
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Rev 2 July, 2006
www.microsemi.com 2
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6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C 500 µA
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V Tj = 125°C 3
mA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 75A 24 28
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 6mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±500 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 19.6
Coss Output Capacitance 4.2
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.3
nF
Qg Total gate Charge 434
Qgs Gate – Source Charge 120
Qgd Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 150A 216
nC
Td(on) Tur n-o n Delay Ti me 10
Tr Rise Time 17
Td(off) Turn-off Delay Time 50
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 150A
RG = 0.8Ω 41
ns
Eon Turn-on Switching Energy 1.9
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 150A, RG = 0.8Ω 1.5
mJ
Eon Turn-on Switching Energy 3.3
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 150A, RG = 0.8Ω 1.7 mJ
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Repetitive Reverse Voltage 200 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 600 µA
IF DC Forward Current Tc = 85°C 120 A
IF = 120A 1.1 1.15
IF = 240A 1.4 VF Diode Forward Voltage
IF = 120A Tj = 125°C 0.9
V
Tj = 25°C 31
trr Reverse Recovery Time
Tj = 125°C 60
ns
Tj = 25°C 120
Qrr Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/µs
Tj = 125°C 500 nC
APTM50AM24SG
APTM50AM24SG
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Rev 2 July, 2006
www.microsemi.com 3
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6
Parallel diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Repetitive Reverse Voltage 600 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 600 µA
IF DC Forward Current Tc = 70°C 120 A
IF = 120A 1.6 1.8
IF = 240A 1.9 VF Diode Forward Voltage
IF = 120A Tj = 125°C 1.4
V
Tj = 25°C 130
trr Reverse Recovery Time Tj = 125°C 170 ns
Tj = 25°C 440
Qrr Reverse Recovery Charge
IF = 120A
VR = 400V
di/dt = 400A/µs Tj = 125°C 1840 nC
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.10
RthJC Junction to Case Thermal Resistance Diodes 0.46 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM50AM24SG
APTM50AM24SG
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Rev 2 July, 2006
www.microsemi.com 4
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6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
120
240
360
480
600
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=10&15V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
60
120
180
240
300
360
420
480
012345678
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0 60 120 180 240 300 360
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 75A
0
40
80
120
160
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM50AM24SG
APTM50AM24SG
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Rev 2 July, 2006
www.microsemi.com 5
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0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID=75A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
limited b
y
R
on
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=100V
VDS =250V
VDS=400V
0
2
4
6
8
10
12
14
0 100 200 300 400 500 600
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=150A
TJ=25°C
APTM50AM24SG
APTM50AM24SG
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Rev 2 July, 2006
www.microsemi.com 6
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6
Delay Times vs Current
td(on)
td(off)
0
10
20
30
40
50
60
30 80 130 180 230 280
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS =333V
RG=0.8Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
30 80 130 180 230 280
ID, Drain Current (A)
tr and tf (ns)
VDS=333V
RG=0.8Ω
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
100
200
300
400
500
600
30 60 90 120 150
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Curren
t
VDS=333V
D=50%
RG=0.8Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
10000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
7
30 80 130 180 230 280
ID, Drain Current (A)
Switching Energy (mJ)
VDS=333V
RG=0.8Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
2
4
6
8
0123456789
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=333V
ID=150A
TJ=125°C
L=100µH
M icrose mi re se rve s the right to cha nge , without notice , the s pe cificatio ns and info rma tion co nta ine d he rein
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