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DATA SH EET
Product data sheet
Supersedes data of 2003 Nov 28 2004 Dec 06
DISCRETE SEMICONDUCTORS
PBSS4330X
30 V, 3 A
NPN low VCEsat (BISS) transistor
db
ook, halfpage
M3D109
2004 Dec 06 2
NXP Semiconductors Product data sheet
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
FEATURES
SOT89 (SC-62) package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements.
APPLICATIONS
Power management
DC/DC converters
Supply line switching
Battery charger
LCD backlighting.
Peripheral drivers
Driver in low supply voltag e ap plic ations
(e.g. lamps and LEDs)
Inductive load dr iver (e.g. relays , bu zzers
and motors).
DESCRIPTION
NPN low V CEsat transistor in a SOT89 plastic package.
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE(1)
PBSS4330X *1R
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 30 V
ICcollector current (DC) 3 A
ICM peak collector current 5 A
RCEsat equivalent on-resistance 100 mΩ
PIN DESCRIPTION
1emitter
2collector
3base
321
sym04
2
1
2
3
Fig.1 Simplified outline (SOT89 ) and symbo l .
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PBSS4330X SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads SOT89
2004 Dec 06 3
NXP Semiconductors Pr oduct data shee t
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Notes
1. Device mounted o n a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted o n a FR 4 printed-circuit board; single-sided copper; tin- p l ate d ; moun tin g pa d for colle ctor 1 cm2.
3. Device mounted o n a FR 4 printed-circuit board; single-sided copper; tin- p l ate d ; moun tin g pa d for colle ctor 6 cm2.
4. Device mounted on a c eramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 50 V
VCEO collector-emitter voltage open base 30 V
VEBO emitter-base voltage open collector 6 V
ICcollector current (DC) note 4 3 A
ICM peak collector current limited by Tj(max) 5 A
IBbase current (DC) 0.5 A
Ptot total power dissipation Tamb 25 °C
note 1 550 mW
note 2 1 W
note 3 1.4 W
note 4 1.6 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb ambient temperature 65 +150 °C
2004 Dec 06 4
NXP Semiconductors Pr oduct data shee t
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
handbook, halfpage
0 40 80 160
Ptot
(W) (1)
(2)
(3)
2
0
1.6
120
1.2
0.8
0.4
MLE372
Tamb (°C)
(4)
Fig.2 Power derating curves.
(1) Ceramic PCB; 7 cm2 mounting pad for collector.
(2) FR4 PCB; 6 cm2 copper mounting pad for collector.
(3) FR4 PCB; 1 cm2 copper mounting pad for collector.
(4) Stand ard footpr int.
2004 Dec 06 5
NXP Semiconductors Pr oduct data shee t
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
THERMAL CHARACTE RISTICS
Notes
1. Device mounted o n a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted o n a FR 4 printed-circuit board; single-sided copper; tin- p l ate d ; moun tin g pa d for colle ctor 1 cm2.
3. Device mounted o n a FR 4 printed-circuit board; single-sided copper; tin- p l ate d ; moun tin g pa d for colle ctor 6 cm2.
4. Device mounted on a c eramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air
note 1 225 K/W
note 2 125 K/W
note 3 90 K/W
note 4 80 K/W
Rth(j-s) thermal resistance from junction to soldering point 16 K/W
006aaa243
10
1
102
103
Zth(j-a)
(K/W)
101
10510102
104102
101tp (s)
103103
1
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
Fig.3 Transient thermal impeda nc e as a function of pulse time; typical values.
Mounted on FR4 printed -circuit bo ard; standard footprint.
2004 Dec 06 6
NXP Semiconductors Pr oduct data shee t
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
006aaa244
10
1
102
103
Zth(j-a)
(K/W)
101
10510102
104102
101tp (s)
103103
1
duty cycle =
1.00
0.75
0.50
0.20
0.05
0.02
0.01
0
0.33
0.10
Fig.4 Transient thermal impeda nc e as a function of pulse time; typical values.
Mounted on F R4 printed-circuit board; mounting pad for collector 1 cm 2.
006aaa245
10
1
102
103
Zth(j-a)
(K/W)
101
10510102
104102
101tp (s)
103103
1
duty cycle =
1.00
0.75
0.50
0.20
0.05
0.02
0.01
0
0.33
0.10
Fig.5 Transient thermal impeda nc e as a function of pulse time; typical values.
Mounted on F R4 printed-circuit board; mounting pad for collector 6 cm 2.
2004 Dec 06 7
NXP Semiconductors Pr oduct data shee t
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 30 V; IE = 0 A −−100 nA
VCB = 30 V; IE = 0 A; Tj = 150 °C−−50 μA
ICES collector-emitter cut-off current VCE = 30 V; VBE = 0 V −−100 nA
IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 A −−100 nA
hFE DC current gain VCE = 2 V
IC = 0.1 A 300
IC = 0.5 A 300
IC = 1 A; note 1 270 700
IC = 2 A; note 1 230
IC = 3 A; note 1 180
VCEsat collector-emitter saturation
voltage IC = 0.5 A; IB = 50 mA −−60 mV
IC = 1 A; IB = 50 mA −−110 mV
IC = 2 A; IB = 100 mA −−220 mV
IC = 3 A; IB = 300 mA; note 1 −−300 mV
RCEsat equivalent on-resistance IC = 3 A; IB = 300 mA; note 1 80 100 mΩ
VBEsat base-emitt er saturation voltage IC = 2 A; IB = 100 mA −−1.1 V
IC = 3 A; IB = 300 mA; note 1 −−1.2 V
VBEon base-emitter turn-on voltage VCE = 2 V; IC = 1 A 1.0 −−V
fTtransition frequen c y IC = 100 mA; VCE = 5 V; f = 100 MHz 100 −−MHz
Cccollector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz −−30 pF
2004 Dec 06 8
NXP Semiconductors Pr oduct data shee t
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
handbook, halfpage
0
800
200
400
600
MRC321
10111010
2103104
hFE
IC (mA)
(1)
(3)
(2)
Fig.6 DC current gain as a fu nction of collector
current; ty pical values.
VCE = 2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1.2
0.4
0.8
MRC322
10111010
2103104
VBE
(V)
IC (mA)
(1)
(3)
(2)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
VCE = 2 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
1
101
102
103
MRC323
10111010
2104
103
VCEsat
(V)
IC (mA)
(1)
(2)
(3)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
1
101
102
103
MRC324
10111010
2104
103
VCEsat
(V)
IC (mA)
(1)
(2)
(3)
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
2004 Dec 06 9
NXP Semiconductors Pr oduct data shee t
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
handbook, halfpage
0.2
1.2
0.8
1.0
MRC325
10111010
2103104
0.6
0.4
VBEsat
(V)
IC (mA)
(2)
(3)
(1)
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
0 2.0
5
0
1
2
3
4
0.4 0.8 1.2 1.6
MRC326
VCE (V)
IC
(A)
(1)
(2)
(3)
(4)
(5)
(8)
(9)
(10)
(6)
(7)
Fig.11 Co llector current as a function of
collector-emitter voltage; typical values.
Tamb = 25 °C.
(1) IB = 25.0 mA.
(2) IB = 22.5 mA.
(3) IB = 20.0 mA.
(4) IB = 17.5 mA.
(5) IB = 15.0 mA.
(6) IB = 12.5 mA.
(7) IB = 10.0 mA.
(8) IB = 7.5 mA.
(9) IB = 5.0 mA.
(10) IB = 2.5 mA.
handbook, halfpage
102
10
1
101
102
MRC327
101110 10
3104
102
RCEsat
(Ω)
IC (mA)
(1) (2)
(3)
Fig.12 Equ i valent on-resist ance as a function of
collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = 55 °C.
handbook, halfpage MRC328
10111010
2103104
101
102
1
10
102
103
RCEsat
(Ω)
IC (mA)
(1)
(2)
(3)
Fig.13 Equ i valent on-resist ance as a function of
collector current; typical values.
(1) IC/IB = 10. (2) IC/IB = 5. (3) IC/IB = 1.
Tamb = 25 °C.
2004 Dec 06 10
NXP Semiconductors Pr oduct data shee t
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 04-08-03
06-03-16
wM
e1
e
EHE
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
9
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
2004 Dec 06 11
NXP Semiconductors Pr oduct data shee t
30 V, 3 A
NPN low VCEsat (BISS) transistor PBSS4330X
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Printed in The Netherlands R75/03/pp12 Date of release: 2004 Dec 06 Document orde r number: 9397 750 13882