PESD5V0V1BSF-315 - NXP - Datasheet.Directory

1. Product profile

1.1 General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in

a SOD962 leadless ultra small Surface-Mounted Device (SMD) pa ckage designed to

protect one signal line from the damage caused by ESD and other transients.

1.2 Features and benefits

Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen

and antimony (Dark Green compliant)

Bidirectional ESD protection of one line

Very low diode capacitance Cd=3.5pF

ESD protection up to ±15 kV according to IEC 61000-4-2

Ultra small SMD package

Symmetrical breakdown voltage

1.3 Applications

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and periph erals

1.4 Quick reference data

[1] This parameter is guaranteed by design.

PESD5V0V1BSF

Ultra low profile bidirectional very low capacitance

ESD protection diode

Rev. 2 — 17 February 2011 Product data sheet

Table 1. Quick reference data

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage −5- 5 V

Cddiode capacitance f = 1 MHz; VR=0V [1] 2.53.54.5pF

Product data sheet Rev. 2 — 17 February 2011 2 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5;

see Figure 1.

[2] Measured from pin 1 to pin 2.

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode (diode 1)

2 cathode (diode 2)

Transparent

top view

sym045

Table 3. Ordering information

Type number Package

Name Description Version

PESD5V0V1BSF - leadless ultra small package; 2 terminals;

body 0.6 ×0.3 ×0.3 mm SOD962

Table 4. Marking codes

Type number Marking code

PESD5V0V1BSF V

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PPP peak pulse power tp=8/20μs[1][2] -8W

IPP peak pulse current tp=8/20μs[1][2] -1A

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Product data sheet Rev. 2 — 17 February 2011 3 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

[1] Measured from pin 1 to pin 2.

[2] Device stressed with ten non-repetitive ESD pulses; see Figure 2.

Table 6. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

VESD electrostatic

discharge voltage IEC 61000-4-2

(contact discharge) [1][2] -15kV

IEC 61000-4-2

(air discharge) -15kV

MIL-STD-883

(human body model) -15kV

Table 7. ESD standards compliance

Standard Conditions

IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Fig 1. 8/20 μs pulse wave fo r m ac c or ding to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa63

100 %

90 %

30 ns

60 ns

10 %

= 0.7 ns to 1 ns

Product data sheet Rev. 2 — 17 February 2011 4 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

6. Characteristics

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5;

see Figure 1.

[2] Measured from pin 1 to pin 2.

[3] Breakdown voltage is always symmetrical within the characterized range, which means no difference in

breakdown voltage from pin 1 to pin 2 and vice versa.

[4] This parameter is guaranteed by design.

[5] Calculated from S-parameter values.

[6] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;

ANS/IESD STM5.1-2008.

Table 8. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff

voltage −5- 5 V

IRM reverse leakage

current VRWM = 5 V - 1 100 nA

VCL clamping voltage IPP =0.5A [1][2] --11.5V

IPP =1A [1][2] - - 12.8 V

VBR breakdown voltage IR=1mA [3] 6- 10V

IR=−1mA [3] −10 - −6V

Cddiode capacitance f = 1 MHz [4]

VR= 0 V 2.5 3.5 4.5 pF

VR= 2.5 V - 2.7 3.5 pF

VR= 5 V - 2.5 3.2 pF

LSseries inductance [5] -0.05-nH

Rdyn dynamic resistance [6] -2.5-Ω

Product data sheet Rev. 2 — 17 February 2011 5 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

f=1MHz; T

amb =25°C

Fig 3. Diode capacitance as a function of reverse

voltage; typical values Fig 4. V-I characteristics for a bidirectional

ESD protection diode

VR (V)

0.0 5.04.02.0 3.01.0

018aaa036

2.0

1.0

3.0

4.0

(pF)

0.0

006aaa67

−VCL −VBR −VRWM

VCL

VBR

VRWM

−IRM

IRM

−IR

−IPP

IPP

−+

Fig 5. ESD clamping test setup

50 Ω

PESD5V0x1BSF

450 Ω

RG 223/U

50 Ω coax

ESD TESTER 4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω018aaa03

Product data sheet Rev. 2 — 17 February 2011 6 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

f=1MHz; T

amb =25°Cf=1MHz; T

amb =25°C

Fig 6. Clamped +1 kV ESD pulse waveform

(IEC 61000-4-2 ne twork) Fig 7. Clamped −1 kV ESD pulse waveform

(IEC 61000-4-2 ne twork)

f=1MHz; T

amb =25°Cf=1MHz; T

amb =25°C

Fig 8. Clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 ne twork) Fig 9. Clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 ne twork)

t (ns)

−50 30023090 16020

018aaa038

VCL

(V)

−5

t (ns)

−50 30023090 16020

018aaa039

−10

−5

−15

VCL

(V)

−20

t (ns)

−50 30023090 16020

018aaa040

VCL

(V)

−10

t (ns)

−50 30023090 16020

018aaa041

−50

−30

−70

−10

VCL

(V)

−90

Product data sheet Rev. 2 — 17 February 2011 7 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

7. Application information

The PESD5V0V1BSF is designed for the protection of one data or signal line from the

damage caused by ESD and/or other surge pulses. The device may be used on lines

where the signal polarities are both, positive and negative with respect to ground.

It provides protection against surges with up to 8 W per line.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD and Electrical Fast

Transient (EFT). The following guidelines are recommended:

1. Place the device as clos e to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Avoid running protected conductors in parallel with unprotected conductors.

4. Minimize all Printed-Circuit Board (PCB) conductive loops including power an d

ground loops.

5. Minimize the length of the transient return path to ground.

6. Avoid using shared transient return paths to a common ground point.

7. Ground planes should b e used whenever possible. For multilayer PCBs, use ground

vias.

Fig 10. Applicati on di agram

018aaa048

PESD5V0V1BSF

GND

line to be protected

Product data sheet Rev. 2 — 17 February 2011 8 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

8. Package outline

Fig 11. Package outline PESD5V0V1BSF (SOD962)

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOD962

sod962_po

10-11-03

10-11-11

Unit

max

nom

min

0.32

0.28

0.0076 0.325

0.275

0.625

0.575

0.4

0.15

0.13

A(1)

Dimensions

Note

1. Dimension A is including coating foil thickness.

2. The marking bar indicates the cathode.

eadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD96

A1b

0.25

0.23

DEe

0 0.5 mm

scale

(2)

Product data sheet Rev. 2 — 17 February 2011 9 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

10. Soldering

Based on results of board mount testing, NXP Semiconductors requ ires the following

soldering guidelines:

1. Soldering footp rint as indicated in Figure 12: solder paste has to cover the whole

solder land area.

2. Non-solder mask defined (copper-defined) solder lands.

3. Minimum stenc il thick ness of 100 μm.

4. Paste type 4 or smaller sphere size.

5. Pick and placement accuracy of ±50 μm.

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

9000

PESD5V0V1BSF SOD962 2 mm pitch, 8 mm tape and reel -315

Reflow soldering is the required soldering method.

Fig 12. Required reflow soldering footprint PESD5V0V1BSF (SOD962)

ootprint information for reflow soldering of leadless ultra small package; 2 terminals SOD96

sod962_fr

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

R0.025 (8×)

0.12

(2×)

0.2

(2×)

0.22

(2×)

0.4

0.85

0.4

Product data sheet Rev. 2 — 17 February 2011 10 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD5V0V1BSF v.2 20110217 Product data sheet - PESD5V0V1BSF v.1

Modifications: •Section 1.2 “Features and benefits”: updated

•Table 1 and Table 8: VRWM and Cd values updated.

•Table 6 “ESD maximum ratings”: updated.

•Table 8: VBR updated.

•Figure 12: title amended.

PESD5V0V1BSF v.1 20101112 Preliminary data sheet - -

Product data sheet Rev. 2 — 17 February 2011 11 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

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use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, the

full data sheet shall pre va il.

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data sheet shall define the specification of the product as agreed between

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Notwithstanding any damages that customer might incur for any reason

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therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

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representation or warranty that such applications will be suitable for the

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Customers are responsible for the design and ope ration of their applications

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accepts no liability for any assistance with applications or customer product

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Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 17 February 2011 12 of 13

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

Quick reference data — The Quick reference dat a is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PESD5V0V1BSF

Bidirectional very low capacitance ESD protection diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 17 February 2011

Document identifier: PESD5V0V1BSF

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 7

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Packing information . . . . . . . . . . . . . . . . . . . . . 9

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13