SGL160N60UFDTU - FAIRCHILD SEMICONDUCTOR

IGBT

SGL160N60UFD

Ultraf ast IGBT

General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UFD series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

Features

• High speed switching

• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A

• High input impedance

• CO-PAK , IGB T with FRD: trr = 75nS (typ.)

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteris ti cs

Symbol Description SGL160N60UFD Units

VCES Collector-Emitter Voltage 600 V

VGES Gate-Emitter Voltage ± 20 V

ICCollector Current @ TC = 25°C 160 A

Collector Current @ TC = 100°C80 A

ICM (1) Pulsed Collector Current 300 A

IFDiode Continuous Forward Current @ TC =100°C25 A

IFM Diode Maximum Forward Current 280 A

PDM a x i m u m P o w e r D issi p a t i o n @ T C = 25°C 250 W

Maximum Power Dissipation @ TC = 100°C 100 W

TJ Operating Junction Temperature -55 to +150 °C

Tstg Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds 300 °C

Symbol Parameter Typ. Max. Units

RθJC(IGBT) Thermal Resistance, Juncti on-to-Case -- 0.5 °C/W

RθJC(DIOD E) Thermal Resistance, Junction-to- Case -- 0.83 °C/W

RθJA Thermal Resistance, Junction-to- Am bient -- 25 °C/W

Applications

AC & DC motor controls, general purpose inverters, robotics , servo controls, and power supplies.

TO-264

GCE

SGL160N60UFD Rev. B1

SGL160N60UFD

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Electrical Characteristics of DIODE TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

∆BVCES/

∆TJ

Temperature Coefficient of Breakdown

Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA

IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA

On Characteri st ics

VGE(th) G -E Th reshold Voltage IC = 80mA, VCE = VGE 3.5 4.5 6.5 V

VCE(sat) Collector to Emitter

Saturation V oltage IC = 80A, VGE = 15V -- 2.1 2.6 V

IC = 160A, VGE = 15V -- 2.6 -- V

Dynamic Characteristics

Cies Input Capacitance VCE = 30V, VGE = 0V,

f = 1M H z

-- 5000 -- pF

Coes Output Capacitance -- 600 -- pF

Cres Reverse Transfer Capacitance -- 200 -- pF

Switching Characteristics

td(on) Turn- On Delay Time

VCC = 300 V, IC = 80A,

RG = 3.9Ω, VGE=15V

Inductive Load, TC = 25°C

-- 40 -- ns

trRise Time -- 101 -- ns

td(off) Turn-Off D e l a y Time -- 90 130 n s

tfFall Time -- 75 150 ns

Eon Turn-On Switching Loss -- 2500 -- uJ

Eoff Turn- Off Sw it ching Loss -- 1760 -- uJ

Ets Total Switching Loss -- 4260 5000 uJ

td(on) Turn- On Delay Time

VCC = 300 V, IC = 80A,

RG = 3.9Ω, VGE = 15V

Inductive Load, TC = 125°C

-- 45 -- ns

trRise Time -- 105 -- ns

td(off) Turn-Off D e l a y Time -- 140 200 n s

tfFall Time -- 122 250 ns

Eon Turn-On Switching Loss -- 2785 -- uJ

Eoff Turn- Off Sw it ching Loss -- 3100 -- uJ

Ets Total Switching Loss -- 5885 -- uJ

QgTotal Gate Charge VCE = 300 V, IC = 80A,

VGE = 15V

-- 345 520 nC

Qge Gate-Emitter Charge -- 60 100 nC

Qgc Gate-Collector Charge -- 95 150 nC

LeInternal Emitter Inductance Measured 5mm from PKG -- 18 -- nH

Symbol Parameter Test Conditions Min. Typ. Max. Units

VFM Diode Forward V oltage IF = 25A TC = 25°C-- 1.4 1.7 V

TC = 100°C-- 1.3 --

trr Diode Reverse Recovery Time

IF = 25A,

di/ dt = 200 A/us

TC = 25°C-- 50 95 ns

TC = 100°C-- 105 --

Irr Diode Peak Reverse Recovery

Current TC = 25°C-- 4.5 10 A

TC = 100°C-- 8.5 --

Qrr Diode Reverse Recovery Charge TC = 25°C-- 112 375 nC

TC = 100°C-- 420 --

SGL160N60UFD Rev. B1

SGL160N60UFD

0 4 8 121620

20 Common Emitter

TC = 25℃

160A

80A

IC = 40A

Collector - Emitter V olta ge, V

CE [V]

Gate - Emi tter Voltag e , VGE [V ]

0306090120150

160A

80A

IC = 40A

Common Emit t er

VGE = 15V

Coll ec tor - Emi t ter Volt age , V

CE [V]

Case Te mperature, TC [℃]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

Characteristics

Fig 3. Satur ation Voltage vs. C as e

Temperature at Variant Current Level Fig 4. Load Curren t vs . Freq uency

Fig 7. Satur atio n Vo ltage vs. VGE

02468

100

200

300

400

500 20V

12V

15V

VGE = 10V

Common Emitter

TC = 25℃

Collector Current, I

C [A ]

Collector - Emitter Voltage, VCE [V]

0.5 1 10

120

160

200

240 Common Emitter

VGE = 15V

TC = 25℃

TC = 125℃

Col l e c t o r Curren t , I

C [A]

Collector - Emitter Voltage, VCE [V]

100

120

0.1 1 10 100 1000

Duty c ycle : 50%

TC = 100℃

Powe r D iss ip a tion = 130 W

VCC = 300V

Load Current : peak of square wave

Frequency [KHz]

Load Current [A]

0 4 8 12 16 20

20 Common Emitter

TC = 125℃

160A

80A

IC = 40A

Collector - Emitter Voltage, V

CE [V]

Gate - Emitter Voltage, VGE [V]

Fig 6. Satur ation Voltage vs. VGE

SGL160N60UFD Rev. B1

SGL160N60UFD

20 40 60 80 100 120 140 160

100

1000

Toff

Com m on Em itter

VCC = 30 0V, V GE = ±15V

RG = 3.9Ω

TC = 25℃

TC = 125℃

Switching Time [ns]

Collector Current, IC [A]

20 40 60 80 100 120 140 160

100

500

Ton

Common Emitter

VCC = 300V, VGE = ±15V

RG = 3.9Ω

TC = 25℃

TC = 125℃

Switching Time [ns]

Collector Current, IC [A]

11080

100

1000

2000

Toff

Common Emitter

VCC = 300V, VGE = ±15V

IC = 80A

TC = 25℃

TC = 125℃

Switching Time [ns]

Gate Re sist ance , RG [Ω]

11080

100

1000 Common Emitter

VCC = 300V, VGE = ±15V

IC = 80A

TC = 25℃

TC = 125℃ Ton

Switching Time [ns]

Gate Resistance, RG [Ω]

Fig 7. Capaci tanc e C harac t eristics Fi g 8. Turn-On Ch ar acterist ic s vs .

Gate Resistance

Fig 9. Turn-Off Ch ar acteristics vs.

Gate Resistance Fig 10. Swit chin g Lo ss vs. Gate R esi st ance

Fig 11. Tur n-O n Cha rac te ristics vs.

Collector Current Fig 12. T urn-Off Characteristics vs.

Collector Current

11030

1000

2000

3000

4000

5000

6000

7000

8000

Cres

Coes

Cies

Common Emitter

VGE = 0V, f = 1MHz

TC = 25℃

Capaci t ance [pF]

Collector - Emitter Voltage, VCE [V]

11080

1000

10000

Eoff

Eon

Eoff

Com m o n Em it te r

VCC = 300V, VGE = ±15V

IC = 80A

TC = 25℃

TC = 125℃

Switching Loss [uJ]

Gate Resistance, RG [Ω]

SGL160N60UFD Rev. B1

SGL160N60UFD

Fig 14. Gate Charge Characteristics

Fig 15. SOA Characteristic Fig 16. Turn-Off SOA Characteristics

Fig 13. Switching Loss vs. Collector Current

0 50 100 150 200 250 300 350

300 V

200 V

VCC = 10 0 V

Com m on Em itter

RL = 37.5 Ω

TC = 25℃

Gate - Emitter Voltage, V

GE [ V ]

Gate Charge, Qg [ nC ]

0.3 1 10 100 1000

0.1

100

1000

Single Nonrepetitive

Pulse TC = 25℃

Curves must be derated

linearly with increase

in temperature

50us

100us

1㎳

DC O perat ion

IC MAX. (Con ti nuous)

IC MAX. (Pul s e d)

Collector Current, I

C [A]

Collector-Emitter Voltage, VCE [V ]

1 10 100 1000

100

500

Safe Operating Area

VGE=20 V , TC=100oC

Collecto r Current, I

C [A]

Collector-Emitter Voltage, VCE [V]

10-5 10-4 10-3 10-2 10-1 100101

1E-3

0.01

0.1

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

Therm al Respon se [Zth jc]

Rectangu lar Pulse Duration [sec]

Pdm

Duty factor D = t1 / t2

Peak Tj = Pdm

Zthjc + T

20 40 60 80 100 120 140 160

100

1000

10000

20000

Eon

Eoff

Common Emitter

VCC = 300V, VGE = ±15V

RG = 3.9Ω

TC = 2 5 ℃

TC = 125℃

Switching Loss [uJ]

Collector Current, IC [A]

Fig 17. Tra nsien t The rma l Imped anc e of IGBT

SGL160N60UFD Rev. B1

SGL160N60UFD

100 1000

100

120 VR = 200 V

IF = 25A

TC = 25℃

TC = 100℃

Reverce Recovery Time, t

rr [ns]

di/dt [A/us]

Fig 19. Reverse Recovery Current

Fig 18. Forward Characteristics

Fig 20. Stored Charg e Fig 21. Reverse Recovery Time

100

0123

TC = 25 ℃

TC = 100 ℃

Forward Voltage Drop, VF [V]

Forward Current, I

F [A]

100 1000

100 VR = 200V

IF = 25A

TC = 25℃

TC = 100℃

Reverse Recovery Current, I

rr [A]

di/dt [A/us]

100 1000

200

400

600

800

1000 VR = 200V

IF = 25A

TC = 25℃

TC = 100℃

Stored Recovery Char ge, Q

rr [nC]

di/dt [A /u s]

SGL160N60UFD

Package Dimension

5.45TYP

[5.45

±0.30

]5.45TYP

[5.45

±0.30

]

4.90

±0.20

20.00

±0.20

(8.30) (8.30) (1.00)

(0.50)

(2.00)

(7.00)

(R1.00)

(R2.00)

ø3.30

±0.20

(7.00)

(1.50)

(1.50) (1.50)

2.50

±0.20

3.00

±0.20

2.80

±0.30

1.00

+0.25

–0.10

0.60

+0.25

–0.10

1.50

±0.20

6.00

±0.20

20.00

±0.20

20.00

±0.50

5.00

±0.20

3.50

±0.20

2.50

±0.10

(9.00)

(2.00)

(1.50)

(0.15)

(2.80) (4.00)

(11.00)

T O-264

Dimensions in Millimeters

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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