MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS9013 Features * * * * * * SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: J3 NPN Silicon Plastic-Encapsulate Transistor SOT-23 A Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 40 --- Vdc 25 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc D OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO C Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, IE =0) Collector Cutoff Current (VCE=20Vdc, IB =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) hFE(2) VCE(sat) VBE(sat) VEB DC Current Gain (IC=50mAdc, V CE=1.0Vdc) DC Current Gain (IC=500mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base- Emitter Voltage (IE =100mAdc) E H G K 120 350 --- 40 --- --- --- 0.6 Vdc --- 1.2 Vdc --- 1.4 Vdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 150 --- MHz .035 .900 CLASSIFICATION OF HFE (1) L 120-200 NOTE .031 .800 .079 2.000 Rank Range MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 Suggested Solder Pad Layout SMALL-SIGNAL CHARACTERISTICS fT J DIMENSIONS ON CHARACTERISTICS hFE(1) F B H 200-350 inches mm .037 .950 .037 .950 www.mccsemi.com Revision: 2 2003/04/30