KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K
Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of
this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh
operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to
realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal
computer and portable machines.
• Part Identification
- KM416C1004C/C-L (5V, 4K Ref.)
- KM416C1204C/C-L (5V, 1K Ref.)
- KM416V1004C/C-L (3.3V, 4K Ref.)
- KM416V1204C/C-L (3.3V, 1K Ref.)
• Extended Data Out Mode operation
(Fast Page Mode with Extended Data Out)
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
Control
Clocks VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0-A11
(A0 - A9)*1
A0 - A7
(A0 - A9)*1
Memory Array
1,048,576 x16
Cells
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
• Refresh Cycles
Part
NO. VCC Refresh
cycle Refresh period
Normal L-ver
C1004C 5V 4K 64ms 128ms
V1004C 3.3V
C1204C 5V 1K 16ms
V1204C 3.3V
• Performance Range
Speed tRAC tCAC tRC tHPC Remark
-45 45ns 13ns 69ns 16ns 5V/3.3V
-5 50ns 15ns 84ns 20ns 5V/3.3V
-6 60ns 17ns 104ns 25ns 5V/3.3V
• Active Power Dissipation
Speed 3.3V 5V
4K 1K 4K 1K
-45 - - 550 825
-5 324 504 495 770
-6 288 468 440 715
Unit : mW
Sense Amps & I/O
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ8
to
DQ15
OE
Note) *1 : 1K Refresh
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
N.C
N.C
N.C
W
RAS
*A11(N.C)
*A10(N.C)
A0
A1
A2
A3
VCC
VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
N.C
N.C
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
PIN CONFIGURATION (Top Views)
Pin Name Pin Function
A0 - A11 Address Inputs (4K Product)
A0 - A9 Address Inputs (1K Product)
DQ0 - 15 Data In/Out
VSS Ground
RAS Row Address Strobe
UCAS Upper Column Address Strobe
LCAS Lower Column Address Strobe
WRead/Write Input
OE Data Output Enable
VCC Power(+5V)
Power(+3.3V)
N.C No Connection
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
N.C
N.C
W
RAS
*A11(N.C)
*A10(N.C)
A0
A1
A2
A3
VCC
VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
N.C
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
*A10 and A11 are N.C for KM416C/V1204C(5V/3.3V, 1K Ref. product)
J : 400mil 42 SOJ
T : 400mil 50(44) TSOP II
•KM416C/V10(2)04CJ •KM416C/V10(2)04CT
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter Symbol Rating Units
3.3V 5V
Voltage on any pin relative to VSS VIN,VOUT -0.5 to +4.6 -1.0 to +7.0 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 -1.0 to +7.0 V
Storage Temperature Tstg -55 to +150 -55 to +150 °C
Power Dissipation PD1 1 W
Short Circuit Output Current IOS 50 50 mA
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS
Parameter Symbol 3.3V 5V Units
Min Typ Max Min Typ Max
Supply Voltage VCC 3.0 3.3 3.6 4.5 5.0 5.5 V
Ground VSS 0 0 0 0 0 0 V
Input High Voltage VIH 2.0 -VCC+0.3*1 2.4 -VCC+1.0*1 V
Input Low Voltage VIL -0.3*2 -0.8 -1.0*2 -0.8 V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Max Parameter Symbol Min Max Units
3.3V
Input Leakage Current (Any input 0≤VIN≤VIN+0.3V,
all other input pins not under test=0 Volt) II(L) -5 5uA
Output Leakage Current
(Data out is disabled, 0V≤VOUT≤VCC)IO(L) -5 5uA
Output High Voltage Level(IOH=-2mA) VOH 2.4 -V
Output Low Voltage Level(IOL=2mA) VOL -0.4 V
5V
Input Leakage Current (Any input 0≤VIN≤VIN+0.5V,
all other input pins not under test=0 Volt) II(L) -5 5uA
Output Leakage Current
(Data out is disabled, 0V≤VOUT≤VCC)IO(L) -5 5uA
Output High Voltage Level(IOH=-5mA) VOH 2.4 -V
Output Low Voltage Level(IOL=4.2mA) VOL -0.4 V
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one Hyper page mode cycle time, tHPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Hyper Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Don′t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver)
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
Symbol Power Speed Max Units
KM416V1004C KM416V1204C KM416C1004C KM416C1204C
ICC1 Don′t care -45
-5
-6
100
90
80
150
140
130
100
90
80
150
140
130
mA
mA
mA
ICC2 Normal
LDon′t care 1
11
12
12
1mA
mA
ICC3 Don′t care -45
-5
-6
100
90
80
150
140
130
100
90
80
150
140
130
mA
mA
mA
ICC4 Don′t care -45
-5
-6
110
100
90
110
100
90
110
100
90
110
100
90
mA
mA
mA
ICC5 Normal
LDon′t care 0.5
200 0.5
200 1
200 1
200 mA
uA
ICC6 Don′t care -45
-5
-6
100
90
80
150
140
130
110
90
80
150
140
130
mA
mA
mA
ICC7 LDon′t care 300 200 350 250 uA
ICCS LDon′t care 150 150 200 200 uA
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)
Parameter Symbol Min Max Units
Input capacitance [A0 ~ A11] CIN1 -5pF
Input capacitance [RAS, UCAS, LCAS, W, OE]CIN2 -7pF
Output capacitance [DQ0 - DQ15] CDQ -7pF
Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Parameter Symbol -45 -5 -6 Units Notes
Min Max Min Max Min Max
Random read or write cycle time tRC 79 84 104 ns
Read-modify-write cycle time tRWC 105 115 140 ns
Access time from RAS tRAC 45 50 60 ns 3,4,10
Access time from CAS tCAC 14 15 17 ns 3,4,5
Access time from column address tAA 23 25 30 ns 3,10
CAS to output in Low-Z tCLZ 3 3 3 ns 3
Output buffer turn-off delay from CAS tCEZ 3 13 3 13 3 15 ns 6,19
OE to output in Low-Z tOLZ 3 3 3 ns 3
Transition time (rise and fall) tT2 50 2 50 2 50 ns 2
RAS precharge time tRP 30 30 40 ns
RAS pulse width tRAS 45 10K 50 10K 60 10K ns
RAS hold time tRSH 13 13 17 ns
CAS hold time tCSH 36 40 50 ns
CAS pulse width tCAS 710K 810K 10 10K ns 18
RAS to CAS delay time tRCD 19 31 20 35 20 43 ns 4
RAS to column address delay time tRAD 14 22 15 25 15 30 ns 10
CAS to RAS precharge time tCRP 5 5 5 ns
Row address set-up time tASR 0 0 0 ns
Row address hold time tRAH 910 10 ns
Column address set-up time tASC 0 0 0 ns 11
Column address hold time tCAH 7 8 10 ns 11
Column address to RAS lead time tRAL 23 25 30 ns
Read command set-up time tRCS 0 0 0 ns
Read command hold time referenced to CAS tRCH 0 0 0 ns 8
Read command hold time referenced to RAS tRRH 0 0 0 ns 8
Write command hold time tWCH 810 10 ns
Write command pulse width tWP 810 10 ns
Write command to RAS lead time tRWL 10 13 15 ns
Write command to CAS lead time tCWL 7 8 10 ns 14
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
AC CHARACTERISTICS (Continued)
Parameter Symbol -45 -5 -6 Units Notes
Min Max Min Max Min Max
Data set-up time tDS 0 0 0 ns 9,17
Data hold time tDH 7 8 10 ns 9,17
Refresh period (1K, Normal) tREF 16 16 16 ms
Refresh period (4K, Normal) tREF 64 64 64 ms
Refresh period (L-ver) tREF 128 128 128 ms
Write command set-up time tWCS 0 0 0 ns 7
CAS to W delay time tCWD 28 32 36 ns 7,13
RAS to W delay time tRWD 59 67 79 ns 7
Column address W delay time tAWD 37 42 49 ns 7
CAS precharge to W delay time tCPWD 39 47 54 ns 7
CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 5 ns 15
CAS hold time (CAS -before-RAS refresh) tCHR 10 10 10 ns 16
RAS to CAS precharge time tRPC 5 5 5 ns
Access time from CAS precharge tCPA 25 28 35 ns 3
Hyper Page mode cycle time tHPC 18 20 25 ns 18
Hyper Page read-modify-write cycle time tHPRWC 39 47 56 ns 18
CAS precharge time (Hyper Page cycle) tCP 7 8 10 ns 12
RAS pulse width (Hyper Page cycle) tRASP 45 200K 50 200K 60 200K ns
RAS hold time from CAS precharge tRHCP 27 30 35 ns
OE access time tOEA 13 13 15 ns 3
OE to data delay tOED 10 13 15 ns
Output buffer turn off delay time from OE tOEZ 3 13 3 13 3 15 ns 6
OE command hold time tOEH 10 13 15 ns
Output data hold time tDOH 4 5 5 ns
Output buffer turn off delay from RAS tREZ 3 13 3 13 3 15 ns 6,19
Output buffer turn off delay from WtWEZ 3 13 3 13 3 15 ns 6
W to data delay tWED 15 15 15 ns
OE to CAS hold time tOCH 5 5 5 ns
CAS hold time to OE tCHO 5 5 5 ns
OE precharge time tOEP 5 5 5 ns
W pulse width (Hyper Page Cycle) tWPE 5 5 5 ns
RAS pulse width (C-B-R self refresh) tRASS 100 100 100 us 20,21,22
RAS precharge time (C-B-R self refresh) tRPS 79 90 110 ns 20,21,22
CAS hold time (C-B-R self refresh) tCHS -50 -50 -50 ns 20,21,22
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
NOTES
An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles
before proper device operation is achieved.
Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are reference levels for measuring timing of input signals.
Transition times are measured between VIH(min) and VIL(max) and are assumed to be 2ns for all inputs.
Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF.
Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only.
If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
Assumes that tRCD≥tRCD(max).
This parameter defines the time at which the output achieves the open circuit condition and is not referenced to Voh or Vol.
tWCS, tRWD, tCWD, tAWD and tCPWD are non restrictive operating parameters. They are included in the data sheet as electrical
characteristics only. If tWCS≥tWCS(min), the cycle is an early write cycle and the data output will remain high impedance for the
duration of the cycle. If tCWD≥tCWD(min), tRWD≥tRWD(min), tAWD≥tAWD(min) and tCPWD≥tCPWD(min), then the cycle is a read-
modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions
is satisfied, the condition of the data out is indeterminate.
Either tRCH or tRRH must be satisfied for a read cycle.
These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in OE controlled write cycle
and read-modify-write cycles.
Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only.
If tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA.
KM416C/V10(2)04C/C-L Truth Table
RAS LCAS UCAS WOE DQ0 - DQ7 DQ8-DQ15 STATE
HX X X X Hi-Z Hi-Z Standby
LH H X X Hi-Z Hi-Z Refresh
L L H H LDQ-OUT Hi-Z Byte Read
LHLHLHi-Z DQ-OUT Byte Read
L L L HLDQ-OUT DQ-OUT Word Read
L L HLHDQ-IN -Byte Write
LHL L H-DQ-IN Byte Write
L L L L HDQ-IN DQ-IN Word Write
L L L H H Hi-Z Hi-Z -
8.
6.
5.
10.
9.
3.
2.
1.
4.
7.
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tASC, tCAH are referenced to the earlier CAS falling edge.
tCP is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle.
tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.
tCWL is specified from W falling edge to the earlier CAS rising edge.
tCSR is referenced to the earlier CAS falling edge before RAS transition low.
tCHR is referenced to the later CAS rising edge after RAS transition low.
tCSR tCHR
RAS
LCAS
UCAS
22.
13.
19.
12.
11.
tDS, tDH is independently specified for lower byte DQ(0-7), upper byte DQ(8-15)
tASC≥6ns, assume tT=2.0ns.
If RAS goes to high before CAS high going, the open circuit condition of the output is achieved by CAS high going.
If CAS goes to high before RAS high going, the open circuit condition of the output is achieved by RAS high going.
If tRASS≥100us, then RAS precharge time must use tRPS instead of tRP.
For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/1024(1K) cycles of burst refresh must be executed
within 64ms/16ms before and after self refresh, in order to meet refresh specification.
For distributed CAS-before-RAS with 15.6us interval, CAS-before-RAS refresh should be executed with in 15.6us immediately
before and after self refresh in order to meet refresh specification.
18.
16.
15.
14.
21.
20.
17.
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tCRP
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
VOH -
VOL -
DQ0 ~ DQ7
COLUMN
ADDRESS
ROW
ADDRESS
tRAS tRC
tCRP
tRP
tCSH tRSHtRCD tCAS
tRAL
tASR tRAH tASC tCAH
tCRP
tAA
tOEA
tCAC
tCLZ
tRAC
OPEN
tCEZ
tRCH
Don′t care
Undefined
LCAS VIH -
VIL -
tCRP
tCSH tRSHtRCD tCAS
tRAD
tRRH
VOH -
VOL -
DQ8 ~ DQ15 tCAC
tCLZ
tRAC
OPEN DATA-OUT
DATA-OUT
tCEZ
tOEZ
tOEZ
tRCS
WORD READ CYCLE
tOLZ
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
NOTE : DIN = OPEN
LOWER BYTE READ CYCLE
RAS VIH -
VIL -
LCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
VOH -
VOL -
DQ0 ~ DQ7
COLUMN
ADDRESS
ROW
ADDRESS
tRAS tRC tRP
tCSH tRSHtRCD tCAS
tRAL
tRAD
tASR tRAH tASC tCAH
tCRP
tAA
tOEA
tCAC
tCLZ
tRAC
OPEN DATA-OUT
tOEZ
tCEZ
tRRH tRCH
Don′t care
Undefined
tCRP tRPC
UCAS VIH -
VIL -
OPEN
VOH -
VOL -
DQ8 ~ DQ15
tRCS
tOLZ
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
NOTE : DIN = OPEN
UPPER BYTE READ CYCLE
RAS VIH -
VIL -
LCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
VOH -
VOL -
DQ0 ~ DQ7
COLUMN
ADDRESS
ROW
ADDRESS
tRAS tRC
tCRP
tRP
tCSH tRSHtRCD tCAS
tRAL
tRAD
tASR tRAH tASC tCAH
tCRP
tAA
tOEA
tCAC
tCLZ
tRAC
OPEN DATA-OUT
tOEZ
tCEZ
tRRH tRCH
Don′t care
Undefined
UCAS VIH -
VIL -
OPEN
VOH -
VOL -
DQ8 ~ DQ15
tCRP tRPC
tRCS
tOLZ
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDRESS
tRAS tRC
tCRP
tRP
tCSH tRSHtRCD tCAS
tRAL
tRAD
tASR tRAH tASC tCAH
tCRP
Don′t care
WORD WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
Undefined
LCAS VIH -
VIL -
tWCS
VIH -
VIL -
DQ0 ~ DQ7 tDS
VIH -
VIL -
DQ8 ~ DQ15
tCRP
tCSH tRSHtRCD tCAS
tCRP
tWCH
tWP
tDH
DATA-IN
tDS tDH
DATA-IN
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tCRP
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDRESS
tRAS tRC tRP
tRAL
tRAD
tASR tRAH tASC tCAH
Don′t care
LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
Undefined
LCAS VIH -
VIL -
tWCS
VIH -
VIL -
DQ0 ~ DQ7 tDS
VIH -
VIL -
DQ8 ~ DQ15
tCRP
tCSH tRSHtRCD tCAS
tWCH
tWP
tDH
DATA-IN
tCRP
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDRESS
tRAS tRC
tCRP
tRP
tCSH tRSHtRCD tCAS
tRAL
tRAD
tASR tRAH tASC tCAH
tCRP
Don′t care
UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
Undefined
LCAS VIH -
VIL -
tWCS
VIH -
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
tWCH
tWP
tDS tDH
DATA-IN
tCRP
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
ROW
ADDRESS
tRAS tRC
tCRP
tRP
tCSH tRSHtRCD tCAS
tRAL
tRAD
tASR tRAH tASC
tCRP
Don′t care
WORD WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
Undefined
LCAS VIH -
VIL -
VIH -
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
tCRP
tRSHtRCD tCAS
tCRP
tRWL
tWP
tCWL
tDH
tDH
DATA-IN
COLUMN
ADDRESS
tOEH
tOED
tDS
tDS
DATA-IN
tCSH
tCAH
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDRESS
tRAS tRC tRP
tRAL
tRAD
tASR tRAH tASC tCAH
Don′t care
LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
Undefined
LCAS VIH -
VIL -
tRWL
VIH -
VIL -
DQ0 ~ DQ7 tDS
VIH -
VIL -
DQ8 ~ DQ15
tCRP
tCSH tRSHtRCD tCAS
tCRP
tWP
tCWL
tDH
DATA-IN
tCRP tRPC
tOEH
tOED
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDRESS
tRAS tRC
tCRP
tRP
tCSH tRSHtRCD tCAS
tRAL
tRAD
tASR tRAH tASC tCAH
tCRP
Don′t care
UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
Undefined
LCAS VIH -
VIL -
VIH -
VIL -
VIH -
VIL -
tCRP
tRWL
tWP
tCWL
tDS tDH
DATA-IN
tOEH
tOED
DQ0 ~ DQ7
DQ8 ~ DQ15
tCRP
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tRWL
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR.
tRAS tRWC tRP
tRSH
tRCD
tCAS
tCSH
tRAD
tASR tRAH tASC tCAH
tCRP
Don′t care
WORD READ - MODIFY - WRITE CYCLE
Undefined
LCAS VIH -
VIL -
VI/OH -
VI/OL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
DQ8 ~ DQ15
tWP
tCWL
tDS tDH
tRSH
tRCD
tCAS
tCRP
tAWD
tCWD
tOEA
tRWD
tOED
tOEZ
tRAC tAA
tOEZ
tRAC tAA tDS
tOED tDH
VALID
DATA-OUT VALID
DATA-IN
VALID
DATA-OUT VALID
DATA-IN
tCAC
tCLZ
tCAC
tCLZ
tOLZ
tOLZ
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tRWL
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR.
tRAS tRWC tRP
tCSH
tRAD
tASR tRAH tASC tCAH
tCRP
Don′t care
LOWER-BYTE READ - MODIFY - WRITE CYCLE
Undefined
LCAS VIH -
VIL -
VI/OH -
VI/OL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
tWP
tCWL
tDS tDH
tRSHtRCD
tCAS
tCRP
tAWD tCWD
tOEA
tRWD
tOED
tOEZ
tRAC tAA
VALID
DATA-OUT VALID
DATA-IN
tRPC
tCAC
tCLZ
OPEN
tOLZ
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tRWL
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR
tRAS tRWC tRP
tRSHtRCD
tCAS
tCSH
tRAD
tASR tRAH tASC tCAH
tCRP
Don′t care
UPPER-BYTE READ - MODIFY - WRITE CYCLE
Undefined
LCAS VIH -
VIL -
VOH -
VOL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
DQ8 ~ DQ15
tWP
tCWL
tAWD tCWD
tOEA
tRWD
tOEZtRAC tAA tDS
tOED tDH
VALID
DATA-OUT VALID
DATA-IN
tCRP tRPC
tCAC
tCLZ
OPEN
tOLZ
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tASC
tOLZ
tCLZ
tOLZ
tCLZ
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR
tRASP tRP
tRCD
tCRP
Don′t care
HYPER PAGE MODE WORD READ CYCLE
Undefined
LCAS VIH -
VIL -
VOH -
VOL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
COLUMN
ADDRESS
tCAS tCAS tCAS tCAS
tCP tCP tCP
tREZ
tHPC tHPC tHPC tRHCPtCSH
tRCD
tCRP
tCAS tCAS tCAS tCAS
tCP tCP tCP
tRAD
tRCS
tOEA
tRCH
tRRH
COLUMN
ADDRESS COLUMN
ADDR
tOEZ
tOEP
tCHO
tAA
tCPA
tAA
tCAC
VALID
DATA-OUT
tOEP
tOEZtRAC
tCAC tDOH
VALID
DATA-OUT VALID
DATA-OUT
tOCH
tCPA
tAA tCAC tCAC
tCPA
tOEZ
VALID
DATA-OUT VALID
DATA-OUT
VALID
DATA-OUT
tOEP
tOEZ
tRAC
tCAC
VALID
DATA-OUT VALID
DATA-OUT
tOEZ
VALID
DATA-OUT VALID
DATA-OUT
tDOH
tOEA
tASR tRAH tASC tCAH tASC tCAH tCAH tCAHtASC
tRAL
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tOEA
tOLZ
tCLZ
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR
tRASP tRP
tCRP
Don′t care
HYPER PAGE MODE LOWER BYTE READ CYCLE
Undefined
LCAS VIH -
VIL -
VOH -
VOL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
COLUMN
ADDRESS
tREZ
tRHCPtCSH
tRCD tCAS tCAS tCAS tCAS
tCP tCP tCP
tRAD
tRCS tRCH
tRRH
COLUMN
ADDRESS COLUMN
ADDR
tOEZ
tOEP
tCHO
tCPA
tCAC
VALID
DATA-OUT
tOEP
tOEZ
tRAC
tCAC tDOH
VALID
DATA-OUT VALID
DATA-OUT
tOCH
tCPA tCAC tCAC
tCPA
tOEZ
VALID
DATA-OUT VALID
DATA-OUT
OPEN
¡ó
tRPC
tASR tRAH tASC tCAH tASC tCAH tCAH tASC tCAHtASC
tAA
tHPC tHPC tHPC
tAA
tAA
tAA
tOEA
tRAL
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR.
tRASP tRP
tRCD
tASR
tCRP
Don′t care
HYPER PAGE MODE UPPER BYTE READ CYCLE
Undefined
LCAS VIH -
VIL -
VOH -
VOL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
COLUMN
ADDRESS
tCAS tCAS tCAS tCAS
tCP tCP tCP
tREZ
tHPC tHPC tHPC tRHCPtCSH
tCRP
tRAH tASC tCAH tCAH tCAH tASC tCAH
tRCS
tOEA
tRCH
tRRH
COLUMN
ADDRESS COLUMN
ADDR.
tOEZ
tOEP
tCHO
tCPA
tCAC
VALID
DATA-OUT
tOEP
tOEZ
tRAC
tCAC
tOLZ
tCLZ
tDOH
VALID
DATA-OUT VALID
DATA-OUT
tOCH
tCPA tCAC tCAC
tCPA
tOEZ
VALID
DATA-OUT VALID
DATA-OUT
OPEN
¡ó
tASC
tRPC
tRPC
tRAD tASC
tAAtAA
tAA
tOEA
tRAL
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR
tRASP tRP
tRCD
tASR
tCRP
Don′t care
HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE )
Undefined
LCAS VIH -
VIL -
VIH -
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
tCRP
tHPC
tRHCP
tRAD
tRAH tCAH tCAH tASC tCAHtASC
VALID
DATA-IN
tDS
¡ó
COLUMN
ADDRESS COLUMN
ADDRESS
tCAS
tCP tCAS
tCP tCAS
tRSH
¡ó
tRCD
tCRP tHPC tHPC
tCAS
tCP tCAS
tCP tCAS
tRSH
¡ó
tCSH
tASC
¡ó
¡ó
tWP
tWCS tWCH
tWP
tWCS tWCH
tWP
tWCS tWCH
¡ó
¡ó
¡ó
VALID
DATA-IN VALID
DATA-IN
¡ó
¡ó
tDH tDS tDH tDS tDH
VALID
DATA-IN VALID
DATA-IN VALID
DATA-IN
¡ó
¡ó
tDH tDH tDHtDStDStDS
NOTE : DOUT = OPEN
tHPC
tRAL
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR
tRASP tRP
tASR
tCRP
Don′t care
HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE )
Undefined
LCAS VIH -
VIL -
VIH -
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
tRPC
tRHCP
tRAD
tRAH tCAH tCAH tASC tCAH
tASC
VALID
DATA-IN
tDS
¡ó
COLUMN
ADDRESS COLUMN
ADDRESS
tRCD
tCRP tHPC tHPC
tCAS tCP tCAS tCP tCAS
tRSH
¡ó
tCSH
tASC ¡ó
¡ó
tWP
tWCS tWCH
tWP
tWCS tWCH
tWP
tWCS tWCH
¡ó
¡ó
¡ó
VALID
DATA-IN VALID
DATA-IN
¡ó
¡ó
tDH tDS tDH tDS tDH
NOTE : DOUT = OPEN
tRAL
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tWCS
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR
tRASP tRP
tASR
tCRP
Don′t care
HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE )
Undefined
LCAS VIH -
VIL -
VIH -
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
tRPC
tRHCP
tRAD
tRAH tCAH tCAH tASC tCAHtASC
VALID
DATA-IN
tDS
¡ó
COLUMN
ADDRESS COLUMN
ADDRESS
tRCD
tCRP tHPC tHPC
tCAS tCP tCAS tCP tCAS
tRSH
¡ó
tCSH
tASC
¡ó
¡ó
tWP
tWCH
tWP
tWCS tWCH
tWP
tWCS tWCH
¡ó
¡ó
¡ó
VALID
DATA-IN VALID
DATA-IN
¡ó
¡ó
tDH tDS tDH tDS tDH
NOTE : DOUT = OPEN
¡ó
¡ó
tRAL
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
VI/OH -
VI/OL -
DQ0 ~ DQ7
ROW
ADDR
tCSH tRASP tRP
tASR
Don′t care
HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE
Undefined
tRCD tCP
tRAD
tCAH
tWP
tDH
COL.
ADDR COL.
ADDR
tCAS tCAS
tCRP
tASC tCAH tRAL
tRCS tCWL
tCWD
tAWD
tRWD
tWP
tCWD
tAWD
tCWL
tAA
tRAC
tOEA
tCLZ
tCAC
tOEZ
tCPWD
tOED
tASC
tCLZ
tOEA
tCACtAA tDH
tOED
LCAS VIH -
VIL -
tRCD tCP
tCAS tCAS
tCRP
tCRP
tCRP
VI/OH -
VI/OL -
DQ8 ~ DQ15
VALID
DATA-OUT
tDH
tAA
tRAC
tCLZ
tCAC
VALID
DATA-IN VALID
DATA-OUT VALID
DATA-IN
tCLZ
tCACtAA tDH
tOEZ
tOED
tDS
tDS
tDS
tOED
tOEZ
tOEZ
VALID
DATA-OUT VALID
DATA-IN VALID
DATA-OUT VALID
DATA-IN
tDS
tHPRWC
tRSH
tRWL
tRCS
tRAH
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tASC
RAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
VI/OH -
VI/OL -
DQ0 ~ DQ7
ROW
ADDR
tCSH tRASP tRP
tASR
Don′t care
HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE
Undefined
tRAD
tCAH
tWP
tDH
COL.
ADDR COL.
ADDR
tASC tCAH tRAL
tRCS tCWL
tCWD
tAWD
tRWD
tWP
tCWD
tAWD
tCWL
tAA
tRAC
tOEA
tCLZ
tCAC
tOEZ
tCPWD
tOED
tCLZ
tOEA
tCAC tAA tDH
tOED
tRWL
tRCD tCP
tCAS tCAS
tCRP
tCRP
tCRP
VI/OH -
VI/OL -
DQ8 ~ DQ15
tDS tOEZ
VALID
DATA-OUT VALID
DATA-IN VALID
DATA-OUT VALID
DATA-IN
tDS
tRPC
tRSH
OPEN
LCAS VIH -
VIL -
UCAS VIH -
VIL -
tHPRWC
tRCS
tOLZ tOLZ
tRAH
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tASC
tCRP
RAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
VI/OH -
VI/OL -
DQ0 ~ DQ7
ROW
ADDR
tCSH tRASP tRP
tASR
Don′t care
HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE
Undefined
tRAD
tCAH
tWP
tDH
COL.
ADDR COL.
ADDR
tCAH tRAL
tRCS tCWL
tCWD
tAWD
tRWD
tWP
tCWD
tAWD
tCWL
tAA
tRAC
tOEA
tCLZ
tCAC
tOEZ
tCPWD
tOED
tCLZ
tOEA
tCAC
tAA tDH
tOED
tRWL
tRCD tCP
tCAS tCAS
tCRP
tCRP
VI/OH -
VI/OL -
DQ8 ~ DQ15 tDS tOEZ
VALID
DATA-OUT VALID
DATA-IN VALID
DATA-OUT VALID
DATA-IN
tDS
tRPC
tRSH
OPEN
LCAS VIH -
VIL -
UCAS VIH -
VIL -
tHPRWC
tASC
tRCS
tRAH
tOLZ tOLZ
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
HYPER PAGE READ AND WRITE MIXED CYCLE
RAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
COLUMN
ADDRESS
ROW
ADDR
tRASP tRP
Don′t care
Undefined
VI/OH -
VI/OL -
DQ0 ~ DQ7
tWEZ
tCP
tHPC tHPC tHPC
tRCD
tRAH
tASC tCAH tCAH tCAH tASC tCAH
tRCHtRCS tRCS tRCH
tASC
COLUMN
ADDRESS COL.
ADDR
VALID
DATA-OUT
tREZtAA
tWCS
VALID
DATA-OUT VALID
DATA-OUT VALID
DATA-IN
tRAC
COL.
ADDR
tCAS
tASR
tCAStCAS tCAS
tASC
tCP
tRCH tWCH
tWPE
tCLZ
tCPA tWED
tAA tWEZ tDS
tDH
tCAC
tOEA
tCP
tHPC tHPC
tCAS tCAS
tCAS tCAS
tCP
VI/OH -
VI/OL -
DQ8 ~ DQ15
tWEZ
VALID
DATA-OUT
tREZ
tAA
VALID
DATA-OUT VALID
DATA-OUT VALID
DATA-IN
tRAC
tAA tWEZ tDS
tDH
tCAC
tOEA
LCAS VIH -
VIL -
UCAS VIH -
VIL -
tCP
tHPC
tCP
READ(tCAC)READ(tCPA)WRITE READ(tAA)
tRAD
tRHCP
tRAL
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tCRP
OPEN
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL - ROW
ADDR
tRC tRP
tASR
tCRP
RAS - ONLY REFRESH CYCLE
LCAS VIH -
VIL -
tRAS
tRAH
NOTE : W, OE , DIN = Don′t care
DOUT = OPEN
tRPC
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE, A = Don′t care
RAS VIH -
VIL -
UCAS VIH -
VIL -
tRC tRP
LCAS VIH -
VIL -
tRAS
tRPC
tCP
tRPC
tCSR tCHR
tCP tCSR tCHR
tCEZ
OPEN
VOH -
VOL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
Don′t care
tRP
Undefined
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tOEZ
DATA-IN
DATA-OUT
tRP
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
ROW
ADDRESS
tRAS
tRC
tCHR
tRCD tRSH
tRAD
tASR tRAH tASC
tCRP
Don′t care
HIDDEN REFRESH CYCLE ( READ )
Undefined
LCAS VIH -
VIL -
VOH -
VOL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
tRSHtRCD
tCRP
tWRH
COLUMN
ADDRESS
tOEA
tRAS
tRC
tCHR
tCAH
tRCS
tAA
tRAC
tCLZ tCAC
DATA-OUT
tCEZ
OPEN
OPEN
tRP
tREZ
tWEZ
tOLZ
tRAL
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
tWCS
tRP
RAS VIH -
VIL -
UCAS VIH -
VIL -
AVIH -
VIL -
WVIH -
VIL -
OE VIH -
VIL -
ROW
ADDRESS
tRAS
tRC
tCHRtRCD tRSH
tRAD
tASR tRAH tASC
tCRP
Don′t care
HIDDEN REFRESH CYCLE ( WRITE )
Undefined
LCAS VIH -
VIL -
VIH -
VIL -
DQ0 ~ DQ7
VIH -
VIL -
DQ8 ~ DQ15
tRSHtRCD
tCRP
tWRH
COLUMN
ADDRESS
tRAS
tRC
tCHR
tCAH
tWRP
tDS
NOTE : DOUT = OPEN
tWP tWCH
DATA-IN
tDH
tDS
DATA-IN
tDH
tRP
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
OPEN
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE , A = Don′t care
RAS VIH -
VIL -
UCAS VIH -
VIL -
tRPS
LCAS VIH -
VIL -
tRASS
tRPC
tCP
tRPC
tCSR
tCEZ
OPEN
VOH -
VOL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
tCHS
tCP tCSR tCHS
tRP
Don′t care
Undefined
KM416C1004C, KM416C1204C CMOS DRAMKM416V1004C, KM416V1204C
42 SOJ 400mil
0.400 (10.16)
0.435 (11.06)
0.445 (11.30)
1.080 (27.43)
1.070 (27.19)
MAX
1.091 (27.71)
MAX
0.148 (3.76)
0.032 (0.81)
0.026 (0.66)
0.021 (0.53)
0.015 (0.38)
0.027 (0.69)
0.012 (0.30)
0.006 (0.15)
0.360 (9.15)
0.380 (9.65)
MIN
#42
#1
0.0375 (0.95) 0.050 (1.27)
Units : Inches (millimeters)
50(44) TSOP(II) 400mil Units : Inches (millimeters)
MAX
0.047 (1.20)
MIN
0.002 (0.05)
0.018 (0.45)
0.010 (0.25)
0.0315 (0.80)0.034 (0.875)
0.821 (20.85)
0.829 (21.05)
0.841 (21.35)
MAX
0.010 (0.25)
0.004 (0.10)
0.400 (10.16)
0.471 (11.96)
0.455 (11.56)
0~8
0.030 (0.75)
0.018 (0.45)
TYP
0.010 (0.25)
O
PACKAGE DIMENSION
