Jun - 09
HERAF1603G ........ HERAF1608G
16.0 Amp. Glass Passivated Ultrafast Rectifiers
Voltage
200 to 1000 V
Current
16.0 A
VFMax. Instantaneous Forward Voltage @16.0 A
IRMaximum DC Reverse Current @ TA = 25 ºC
at Rated DC Blocking Voltage @ TA = 125 ºC
Rthj-c Typical Thermal Resistance (Note 1) 2.0 °C/W
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
@ Tc = 100 ºC
VRRM
VRMS
VDC
IF(AV)
TjOperating Temperature Range
IFSM
Peak Forward Surge Current 8.3 ms. single
Half Sine-wave Superimposed on Rated
Load (JEDEC Method)
16 A
250 A
– 65 to + 150 °C
200 800
140 560
200 800
Cj
10 µA
400 µA
HERAF
1603G
Absolute Maximum Ratings, according to IEC publication No. 134
ITO-220AC
12
400
280
400
1000
700
1000
HERAF
1605G HERAF
1607G HERAF
1608G
1.7 V
50 nS
Maximum Reverse Recovery Time From
IF =0.5 A; IR = 1 A; IRR = 0.25 A
Trr
Typical Junction Capacitance at 1MHz
and reverse voltage of 4VDC
80 nS
110 pF
Note: 1. Mounted on Heatsink Size of 50.8 mm x 76.2 mm x 6.35 mm Al-Plate.
Electrical Characteristics
600
420
600
HERAF
1606G
Glass passivated chip junction.
• For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
MECHANICAL DATA
• Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
High current capability
Cases: ITO-220AC Molded plastic
• Polarity: As marked
• Mounting torque: 5 in - 1bs. Max.
• Weight: 2.24 grams
• Epoxy: UL 94V0 rate flame retardant
High efficiency, Low VF
High reliability
High surge current capability
• High temperature soldering guaranteed:
260 °C/10 seconds, 6.35mm from case.
PIN 1
Case Positive
PIN 2 CASE
Tstg Storage Temperature Range – 65 to + 150 °C
HERAF
1603G HERAF
1605G HERAF
1607G HERAF
1608G
HERAF
1606G
1.0 V 1.3 V
150 pF
Jun - 09
HERAF16G
0.01
IF, instantaneous forward current (A)
10
VF, forward voltage (V)
0.4 0.8 1.2
TYPICAL FORWARD CHARACTERISTICS
100
100
MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
250
0101
I
FSM
, peak forward surge current (A)
300
05001
Cj, junction capacitance (pF)
Percent of rated peak reverse voltage (%)
IR, Instantaneous reverse current (µA)
0
1
0.1
1000
0.6 1.0
TYPICAL REVERSE CHARACTERISTICS
PER LEG
20 40 60 80
Number of cycles at 60 Hz
TYPICAL JUNCTION CAPACITANCE
10
VR, reverse voltage (V)
100
140
50
0
IF(AV), average forward current (A)
100
20
015050 1.4 1.6
250
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
NON INDUCTIVE
50W
PULSE
GENERATOR
(NOTE 2)
SET TIME BASE FOR
5/ 10ns/ cm
1cm
trr
+0.5A
0
-0.25A
-1.0A
1W
NON
INDUCTIVE
DUT
OSCILLOSCOPE
(NOTE 1)
NON INDUCTIVE
10
W
(+)
50Vdc
(approx)
(-) (+)
(-)
NOTES: 1. Rise Time = 7ns max. Input Impedance =
1 megohm 22 pf
2. Rise Time = 10 ns max. Sourse Impedance =
50 ohms
12
0.1
1.8
200
50
2 10 100
200
150
2 5 20 50
120100
8
16
4
10
0.03
3
30
100
150
100
1000
50
3
5 20 200
MAXIMUM FORWARD CURRENT DERATING
CURVE
TC, case temperature (°C)
Rating And Characteristic Curves
HERAF1603G-HERAF1605G
HERAF1606G-HERAF1608G
Tj = 25 °C
8.3ms Single Half Sine Wawe
JEDEC Method
HERAF1603G
HERAF1605G
HERAF1
6
06G-HERAF1
6
08G
Tj = 125 °C
Tj = 25 °C
Tj = 25 °C
Pulse Width=300 µs
1% Duty Cycle
Tj = 25 °C
HERAF16G
Jun - 09
PACKAGE MECHANICAL DATA ITO-220AC
21
B
A
L7
C
D
L2
L3
L4
DIA E
F2
L5
L6
F1
F
G1 G1
DIMENSIONS
Milimeters
Nominal
Min.
REF.
A
B
C
E
F1
F2
L2
L3
L4
L5
L6
D
F
L7
G1
DIA
-
-
4.40
2.50
9.90
1.10
13.20
14.80
2.55
3.70
3.00
0.50
0.50
6.30
2.40
3.00
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.55
-
4.70
2.80
13.80
15.50
2.85
4.10
3.16
Max.
0.76
1.40
1.60
1.80
10.30
0.90
6.90
2.70
3.40