Jun - 09
HERAF1603G ........ HERAF1608G
16.0 Amp. Glass Passivated Ultrafast Rectifiers
Voltage
200 to 1000 V
Current
16.0 A
VFMax. Instantaneous Forward Voltage @16.0 A
IRMaximum DC Reverse Current @ TA = 25 ºC
at Rated DC Blocking Voltage @ TA = 125 ºC
Rthj-c Typical Thermal Resistance (Note 1) 2.0 °C/W
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
@ Tc = 100 ºC
VRRM
VRMS
VDC
IF(AV)
TjOperating Temperature Range
IFSM
Peak Forward Surge Current 8.3 ms. single
Half Sine-wave Superimposed on Rated
Load (JEDEC Method)
16 A
250 A
– 65 to + 150 °C
200 800
140 560
200 800
Cj
10 µA
400 µA
HERAF
1603G
Absolute Maximum Ratings, according to IEC publication No. 134
ITO-220AC
12
400
280
400
1000
700
1000
HERAF
1605G HERAF
1607G HERAF
1608G
1.7 V
50 nS
Maximum Reverse Recovery Time From
IF =0.5 A; IR = 1 A; IRR = 0.25 A
Trr
Typical Junction Capacitance at 1MHz
and reverse voltage of 4VDC
80 nS
110 pF
Note: 1. Mounted on Heatsink Size of 50.8 mm x 76.2 mm x 6.35 mm Al-Plate.
Electrical Characteristics
600
420
600
HERAF
1606G
• Glass passivated chip junction.
• For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
MECHANICAL DATA
• Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
• High current capability
• Cases: ITO-220AC Molded plastic
• Polarity: As marked
• Mounting torque: 5 in - 1bs. Max.
• Weight: 2.24 grams
• Epoxy: UL 94V0 rate flame retardant
• High efficiency, Low VF
• High reliability
• High surge current capability
• High temperature soldering guaranteed:
260 °C/10 seconds, 6.35mm from case.
PIN 1
Case Positive
PIN 2 CASE
Tstg Storage Temperature Range – 65 to + 150 °C
HERAF
1603G HERAF
1605G HERAF
1607G HERAF
1608G
HERAF
1606G
1.0 V 1.3 V
150 pF