1N5913B~1N5940B Zener diode Features 1. High reliability 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25 Parameter Test Conditions Type Symbol Value Unit PV 1.5 W Z-current IZ PV/VZ mA Junction temperature Tj 150 Tstg -65~+175 Tamb50 Power dissipation Storage temperature range Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Electrical Characteristics Tj=25 Parameter Forward voltage Test Conditions Type IF=200mA Symbol VF Min Typ Max Unit 1.5 V Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 1/5 1N5913B~1N5940B VZnom1) IZT for rzjT rzjK at IZK IR at VR V mA mA A V 1N5913B 3.3 113.6 <10 <500 1 <50 1 1N5914B 3.6 104.2 <9 <500 1 <35.5 1 1N5915B 3.9 96.1 <7.5 <500 1 <12.5 1 1N5916B 4.3 87.2 <6 <500 1 <2.5 1 1N5917B 4.7 79.8 <5 <500 1 <2.5 1.5 1N5918B 5.1 73.5 <4 <350 1 <2.5 2 1N5919B 5.6 66.9 <2 <250 1 <2.5 3 1N5920B 6.2 60.5 <2 <200 1 <2.5 4 1N5921B 6.8 55.1 <2.5 <200 1 <2.5 5.2 1N5922B 7.5 50 <3 <400 0. 5 <2.5 6 1N5923B 8.2 45.7 <3.5 <400 0. 5 <2.5 6.5 1N5924B 9.1 41.2 <4 <500 0. 5 <2.5 7 1N5925B 10 37.5 <4.5 <500 0.25 <2.5 8 1N5926B 11 34,1 <5.5 <550 0.25 <0.5 8.4 1N5927B 12 31.2 <6.5 <550 0.25 <0.5 9.1 1N5928B 13 28.8 <7 <550 0.25 <0.5 9.9 1N5929B 15 25 <9 <600 0.25 <0.5 11.4 1N5930B 16 23.4 <10 <600 0.25 <0.5 12.2 1N5931B 18 20.8 <12 <650 0.25 <0.5 13.7 1N5932B 20 18.7 <14 <650 0.25 <0.5 15.2 1N5933B 22 17 <17.5 <650 0.25 <0.5 16.7 1N5934B 24 15.6 <19 <700 0.25 <0.5 18.2 1N5935B 27 13.9 <23 <700 0.25 <0.5 20.6 1N5936B 30 12.5 <26 <750 0.25 <0.5 22.8 1N5937B 33 11.4 <33 <800 0.25 <0.5 25.1 1N5938B 36 10.4 <38 <850 0.25 <0.5 27.4 1N5939B 39 9.6 <45 <900 0.25 <0.5 29.7 1N5940B 43 8.7 <53 <950 0.25 <0.5 32.7 1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(TL)at 30, Type 9.5mm(3/8") from the diode body. Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 2/5 1N5913B~1N5940B Characteristics (Tj=25 unless otherwise specified) Symbol Parameter Vz Reverse zener voltage @ IZT IZT Reverse current ZZT Maximum zener impedance @ IZT IZK Reverse current ZZK Maximum zener impedance @ IZK IR Reverse leakage current @ VR VR Breakdown voltage IF Forward current VF Forward voltage @ IF Figure 1. Zener voltage regulator Figure 2. Steady state power derating Figure 3. Vz - 3.3 thru 10 volts Figure 4. Zener voltage - 3.3 to 12 volts Figure 5. Zener voltage - 14 to 43 volts Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 3/5 1N5913B~1N5940B Figure 6. Effect of zener voltage Figure 7. Capacitance curve Figure 8. Typical pulse rating curve Figure 9. Pulse waveform Figure 10. Pulse waveform Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 4/5 1N5913B~1N5940B Dimensions in mm Cathode identification 0.85 max. 1N 59 Cathode 26 min. 4.5 max. Anode 2.8 max. 26 min. Standard Glass Case JEDEC DO-41 Marking 1N 59 18 B Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 5/5