PD - 97210A IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * * * * * * * * * * Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 S short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 48A, TC = 100C tSC 5s, TJ(max) = 175C G VCE(on) typ. = 1.65V E n-channel Benefits C * High Efficiency in a wide range of applications * Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses * Rugged transient Performance for increased reliability * Excellent Current sharing in parallel operation * Low EMI E C G TO-247AC G Gate C Collector E Emitter Absolute Maximum Ratings Max. Units VCES Collector-to-Emitter Voltage Parameter 600 V IC @ TC = 25C Continuous Collector Current 96 IC @ TC = 100C Continuous Collector Current 48 ICM ILM Pulse Collector Current Clamped Inductive Load Current IF @ TC = 25C Diode Continous Forward Current IF @ TC = 100C IFM Diode Continous Forward Current Diode Maximum Forward Current VGE Continuous Gate-to-Emitter Voltage 20 Transient Gate-to-Emitter Voltage 30 PD @ TC = 25C Maximum Power Dissipation 330 PD @ TC = 100C Maximum Power Dissipation 170 TJ Operating Junction and TSTG Storage Temperature Range 144 c 192 A 96 48 e 192 V W -55 to +175 C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf*in (1.1 N*m) Thermal Resistance Min. Typ. Max. Units RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) Parameter --- --- 0.45 C/W RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) --- --- 0.92 RCS Thermal Resistance, Case-to-Sink (flat, greased surface) --- 0.24 --- RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) --- --- 40 1 www.irf.com 04/01/11 IRGP4063DPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage Min. Typ. 600 -- Max. Units -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.30 -- -- 1.65 2.14 VCE(on) Collector-to-Emitter Saturation Voltage -- 2.0 -- -- 2.05 -- VGE(th) Gate Threshold Voltage 4.0 -- 6.5 VGE(th)/TJ Threshold Voltage temp. coefficient -- -21 -- gfe ICES Forward Transconductance -- 32 -- Collector-to-Emitter Leakage Current -- 1.0 150 -- 450 1000 -- 1.95 2.91 -- 1.45 -- -- -- 100 VFM IGES Diode Forward Voltage Drop Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 150A Ref.Fig f CT6 V/C VGE = 0V, IC = 1mA (25C-175C) IC = 48A, VGE = 15V, TJ = 25C V CT6 5,6,7 IC = 48A, VGE = 15V, TJ = 150C 9,10,11 IC = 48A, VGE = 15V, TJ = 175C V VCE = VGE, IC = 1.4mA 9, 10, mV/C VCE = VGE, IC = 1.0mA (25C - 175C) S VCE = 50V, IC = 48A, PW = 80s A VGE = 0V, VCE = 600V V IF = 48A 11, 12 VGE = 0V, VCE = 600V, TJ = 175C 8 IF = 48A, TJ = 175C nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Qg Total Gate Charge (turn-on) Parameter -- 95 Max. Units 140 Qge Gate-to-Emitter Charge (turn-on) -- 28 42 Qgc Gate-to-Collector Charge (turn-on) -- 35 53 Eon Turn-On Switching Loss -- 625 1141 Eoff Turn-Off Switching Loss -- 1275 1481 Etotal Total Switching Loss -- 1900 2622 td(on) Turn-On delay time -- 60 78 tr Rise time -- 40 56 Conditions Ref.Fig IC = 48A nC 24 VGE = 15V CT1 VCC = 400V IC = 48A, VCC = 400V, VGE = 15V J CT4 RG = 10, L = 200H, LS = 150nH, TJ = 25C Energy losses include tail & diode reverse recovery IC = 48A, VCC = 400V, VGE = 15V ns CT4 RG = 10, L = 200H, LS = 150nH, TJ = 25C td(off) Turn-Off delay time -- 145 176 tf Fall time -- 35 46 Eon Turn-On Switching Loss -- 1625 -- Eoff Turn-Off Switching Loss -- 1585 -- Etotal Total Switching Loss -- 3210 -- Energy losses include tail & diode reverse recovery td(on) Turn-On delay time -- 55 -- IC = 48A, VCC = 400V, VGE = 15V tr Rise time -- 45 -- td(off) Turn-Off delay time -- 165 -- tf Fall time -- 45 -- Cies Input Capacitance -- 3025 -- Coes Output Capacitance -- 245 -- VCC = 30V Cres Reverse Transfer Capacitance -- 90 -- f = 1.0Mhz TJ = 175C, IC = 192A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 SCSOA Short Circuit Safe Operating Area 5 IC = 48A, VCC = 400V, VGE=15V J ns RG=10, L=200H, LS=150nH, TJ = 175C f 13, 15 CT4 WF1, WF2 14, 16 RG = 10, L = 200H, LS = 150nH CT4 TJ = 175C WF1 WF2 pF VGE = 0V 23 Rg = 10, VGE = +15V to 0V -- -- s VCC = 400V, Vp =600V 22, CT3 Rg = 10, VGE = +15V to 0V Erec trr Reverse Recovery Energy of the Diode Irr WF4 -- J TJ = 175C 115 -- ns VCC = 400V, IF = 48A 40 -- A VGE = 15V, Rg = 10, L =200H, Ls = 150nH -- 845 Diode Reverse Recovery Time -- Peak Reverse Recovery Current -- 17, 18, 19 20, 21 WF3 Notes: VCC = 80% (VCES), VGE = 20V, L = 200H, RG = 10. This is only applied to TO-247AC package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com IRGP4063DPbF 100 350 90 300 80 250 70 200 Ptot (W) IC (A) 60 50 40 150 30 100 20 50 10 0 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 T C (C) T C (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 10sec 100 IC (A) IC (A) 100sec 1msec 10 10 DC 1 Tc = 25C Tj = 175C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25C, TJ 175C; VGE =15V 200 180 180 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 160 100 80 120 100 80 60 60 40 40 20 20 0 0 0 2 4 6 VCE (V) 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s www.irf.com VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 140 ICE (A) 140 ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175C; VGE =15V 200 160 1000 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s 3 IRGP4063DPbF 200 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 180 160 160 140 120 -40c 25C 175C 120 IF (A) ICE (A) 140 180 100 100 80 80 60 60 40 40 20 20 0 0 0 2 4 6 8 10 0.0 1.0 2.0 Fig. 8 - Typ. Diode Forward Characteristics tp = 80s 20 20 18 18 16 16 14 14 ICE = 24A ICE = 48A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175C; tp = 80s 10 ICE = 96A 8 12 ICE = 24A ICE = 48A 10 ICE = 96A 8 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 18 180 16 160 14 140 ICE = 24A ICE = 48A ICE = 96A 8 ICE (A) VCE (V) 200 10 20 Fig. 10 - Typical VCE vs. VGE TJ = 25C 20 12 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40C T J = 25C T J = 175C 120 100 80 6 60 4 40 2 20 0 0 5 10 15 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175C 4 4.0 VF (V) VCE (V) 12 3.0 20 0 5 10 15 VGE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s www.irf.com IRGP4063DPbF 6000 1000 5000 Swiching Time (ns) EOFF Energy (J) 4000 EON 3000 2000 tdOFF 100 tdON tF tR 1000 0 10 0 50 100 150 0 20 40 60 80 100 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V 5000 1000 4500 tdOFF EOFF Swiching Time (ns) Energy (J) 4000 EON 3500 3000 2500 tR tdON 100 tF 2000 1500 1000 10 0 25 50 75 100 125 0 25 Fig. 15 - Typ. Energy Loss vs. RG TJ = 175C; L = 200H; VCE = 400V, ICE = 48A; VGE = 15V 100 125 Fig. 16 - Typ. Switching Time vs. RG TJ = 175C; L = 200H; VCE = 400V, ICE = 48A; VGE = 15V 45 45 40 40 RG = 10 35 35 30 RG = 22 25 20 IRR (A) IRR (A) 75 RG () Rg () RG = 47 15 RG = 100 10 30 25 20 15 5 0 10 0 20 40 60 80 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175C www.irf.com 50 100 0 25 50 75 100 125 RG () Fig. 18 - Typ. Diode IRR vs. RG TJ = 175C 5 IRGP4063DPbF 45 4000 40 3500 96A 3000 QRR (nC) IRR (A) 35 30 25 2500 100 22 47 2000 20 10 48A 24A 1500 15 1000 10 0 200 400 600 800 0 1000 500 diF /dt (A/s) 1500 Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175C 18 400 RG = 10 16 350 RG = 22 14 300 12 250 10 200 8 150 6 100 900 800 1000 diF /dt (A/s) 500 400 RG = 47 300 RG = 100 200 100 0 50 4 0 20 40 60 80 100 8 10 12 IF (A) 16 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25C 10000 16 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 14 VGE (V) Fig. 21 - Typ. Diode ERR vs. IF TJ = 175C 1000 Coes 100 Cres 10 V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 0 0 20 40 60 80 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 Current (A) Energy (J) 600 Time (s) 700 100 0 25 50 75 100 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 48A; L = 600H www.irf.com IRGP4063DPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 J R1 R1 J 1 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 2 1 R3 R3 3 2 C 3 Ri (C/W) i (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 Ci= i/Ri Ci i/Ri 0.020330 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 J SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 R1 R1 J 1 1 R2 R2 2 R3 R3 3 2 Ci= i/Ri Ci i/Ri C 3 Ri (C/W) i (sec) 0.2774 0.000908 0.3896 0.2540 0.003869 0.030195 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGP4063DPbF L L DUT 0 VCC 80 V + - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 DUT Rg 22K C sense VCC G force DUT 0.0075F E sense E force Fig.C.T.5 - Resistive Load Circuit 8 Fig.C.T.6 - BVCES Filter Circuit www.irf.com 140 700 140 600 120 600 120 500 100 500 400 80 400 60 90% ICE 200 40 tr TEST CURRENT 300 20 5% ICE 0 EOFF Loss -100 -0.40 0.10 0.60 200 40 100 0 -20 1.10 0 -100 6.20 6.40 600 600 500 500 40 QRR 30 VCE (V) 10 0 10% Peak IRR Peak IRR ICE VCE 400 tRR 20 IRR (A) 6.80 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.4 50 400 300 300 200 200 100 100 0 -30 -0.05 0.05 0.15 0.25 time (S) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175C using Fig. CT.4 www.irf.com 6.60 -20 7.00 Time (s) 60 -40 -0.15 20 EON Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4 -20 5% V CE 10% test current Time(s) -10 60 ICE (A) 0 80 90% test 5% V CE 100 100 ICE (A) tf 300 VCE (V) 700 I CE (A) VCE (V) IRGP4063DPbF 0 -100 -5.00 0.00 5.00 -100 10.00 time (S) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25C using Fig. CT.3 9 IRGP4063DPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6,6$1,5)3( :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 ,5)3( + $66(0%/< /27&2'( '$7(&2'( <($5 :((. /,1(+ TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/11 10 www.irf.com