DATA SH EET
Product specification
Supersedes data of 1998 Jul 10 2003 Apr 11
DISCRETE SEMICONDUCTORS
BAT74S
Schottky barrier double diode
b
ook, halfpage
MBD128
2003 Apr 11 2
Philips Semiconductors Product specification
Schottky barrier double diode BAT74S
FEATURES
Low forward voltage
Guard ring protected
Small SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies are encapsulated in a SOT363 (SC-88)
small SMD plastic package.
PINNING
PIN DESCRIPTION
1 anode 1
2 not connected
3 cathode 2
4 anode 2
5 not connected
6 cathode 1
handbook, halfpage
654
123
MDB277
MSA370
123
654
Top view
Fig.1 Simplified outline (SOT363; SC-88) and
symbol.
Marking code: 74.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage 30 V
IFcontinuous forward current 200 mA
IFRM repetitive peak forward current tp1s;δ≤0.5 300 mA
IFSM non-repetitive peak forward current tp<10 ms 600 mA
Ptot total power dissipation Tamb 25 °C; see Fig.2 240 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 125 °C
Tamb operating ambient temperature 65 +125 °C
Double diode operation
VRcontinuous reverse voltage 30 V
VRcontinuous reverse voltage series connection 60 V
IFcontinuous forward current 110(1) mA
IFRM repetitive peak forward current tp1s;δ≤0.5 200 mA
2003 Apr 11 3
Philips Semiconductors Product specification
Schottky barrier double diode BAT74S
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulsed test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT363 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF= 0.1 mA 240 mV
IF= 1 mA 320 mV
IF= 10 mA 400 mV
IF= 30 mA 500 mV
IF= 100 mA 800 mV
IRreverse current VR= 25 V; note 1; see Fig.4 2 µA
trr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 ;
measured at IR=1mA
5ns
C
ddiode capacitance f = 1 MHz; VR= 1 V; see Fig.5 10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
2003 Apr 11 4
Philips Semiconductors Product specification
Schottky barrier double diode BAT74S
GRAPHICAL DATA
0
100
200
300
Ptot
(mW)
MBL889
150750 Tamb (°C)
Fig.2 Power derating curve. Fig.3 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
0102030
V (V)
R
10
3
IR
(µA)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
handbook, halfpage
0102030
0
5
10
15
VR (V)
Cd
(pF)
MSA891
2003 Apr 11 5
Philips Semiconductors Product specification
Schottky barrier double diode BAT74S
handbook, halfpage
MBL888
90%
10%
trr
Q
dI
dt
t
IF
IR
F
r
Fig.6 Reverse recovery definitions.
2003 Apr 11 6
Philips Semiconductors Product specification
Schottky barrier double diode BAT74S
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wBM
b
p
D
e
1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe
1H
E
L
p
Qywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
2003 Apr 11 7
Philips Semiconductors Product specification
Schottky barrier double diode BAT74S
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL W://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands 613514/04/pp8 Date of release: 2003 Apr 11 Document order number: 9397 750 11161