fA MOSPEC PLASTIC MEDIUM- POWER SILICON TRANSISTORS ...designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage- Veeqsus) = 40 V (Min) - 2N6666 = 60 V (Min) - 2N6667 = 80 V (Min) - 2N6668 * Collector-Emitter Saturation Voltage VoE(saty = 2.0 V (Max.) @ I, = 3.0 A - 2N6666 = 2.0 V (Max.) @ I, = 5.0 A - 2N6667, 2N6668 * DC Current Gain hFE = 3000(Typ) @ |, = 4.0A * Complementary to 2N6386, 2N6387, 2N6388 MAXIMUM RATINGS BASE COLLECTOR 9 PNP 2N6666 2N6667 2N6668 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS Tc , TEMPERATURE(C) Characteristic Symbol | 2N6666 | 2N6667 | 2N6668 | Unit Collector-Emitter Voltage Veeo 40 60 80 V COilector-Base Voltage Veso 40 60 80 Vv yy Emitter-Base Voltage Vero 5.0 Vv Collector Current-Continuous le 8.0 10 10 A TO-220 -Peak lom 15 15 15 t B Base Current Ip 0.25 A y Pe 7 Pomp 4 Total Power Dissipation @T,= 25C Py 65 Ww A Derate above 25C 0.52 wc Litas | errs J Operating and Storage Junction Ty .Tst C D Temperature Range - 65 to +150 th A . L THERMAL CHARACTERISTICS F mele Characteristic Symbol Max Unit PIN 1.BASE 2.COLLECTOR Thermal Resistance Junction to Case Roejc 1.92 CAV 4s. COLLEGTOR(CASE) MILLIMETERS DIM FIGURE -1 POWER DERATING MIN | MAX 80 A 14.68 15.31 #70 B 9.78 10.42 E Cc 5.01 | 652 $ 60 D 13,06 | 14.62 z E 3.57 4.07 Q 50 F 2.42 3.66 & 40 G 1.12 1.36 a H 0.72 0.96 G 30 I 4.22 4.98 20 J 114 | 1.38 & K 220 | 297 210 L 0.33 | 055 * 0 M 2.48 | 298 0 2 50 75 100 125 150 oO 3.70 3.902N6666, 2N6667,2N6668 PNP (erence ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) VeEo(sus) Vv (Ig = 200 mA, Ip = 0) 2N6666 40 2N6667 60 2N6668 80 Collector Cutoff Current lee mA (Voge = 40 V, 1, = 0) 2N6666 1.0 ( Veg = 60 V, I, = 0) 2N6667 1.0 ( Veg = 80 V, |, = 0) 2N6668 1.0 Collector Cutoff Current loex mA (Veg = 40 V, Veeiory = 1-5 V ) 2N6666 0.3 ( Veg = 60 V, Vector = 1-5 V ) 2N6667 0.3 ( Veg = 80 V, Veron = 1-5 V) 2N6668 0.3 ( Veg = 40 V, Vegion = 1-5 V, Te = 125C) 2N6666 3.0 ( Veg = 60 V, Viegion = 1-5 V, Te = 125C) 2N6667 3.0 ( Veg = 80 V, Veeiom = 1-5 V, Te. = 125C) 2N6668 3.0 Emitter Cutoff Current leno mA (Veg = 5.0 V,I,= 0 ) 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (1, =3.0A, VQ. =3.0V) 2N6666 1000 20000 (I, =5.0A, Veg =3.0V) 2N6667, 2N6668 1000 20000 (I, =8.0A,V,=3.0V) 2N6666 100 (I, = 10A, Veg = 3.0 V) 2N6667, 2N6668 100 Collector-Emitter Saturation Voltage Voetsat) Vv (1, =3.0A, |, =6 mA) 2N6666 2.0 (1, = 5.0A, I, = 10 mA) 2N6667, 2N6668 2.0 (i, = 8.0A, |, = 80 mA) 2N6666 3.0 (I, = 10A, |, = 100 mA) 2N6667, 2N6668 3.0 Base-Emitter On Voltage Visg(on) Vv (1, =3.0A, Veg = 3.0 V) 2N6666 2.8 (1, =5.0A, V4, =3.0V) 2N6667, 2N6668 2.8 (|, =8.0A, Vo, =3.0V) 2N6666 45 (1, = 10A, Vg = 3.0 V) 2N6667, 2N66638 45 DYNAMIC CHARACTERISTICS Small-Signal Current Gain hee (Io = 1.0 A, Veg = 5.0 V, f = 1.0 KHz) 1000 Output Capacitance Cob pF (Veg = 10V,I, = 0, f = 1.0 MHZ ) 200 (1) Pulse Test: Pulse width = 300p s , Duty Cycle = 2.0%2N6666, 2N6667, 2N6668 PNP 2 DC CURRENT GAIN COLLECTOR SATURATION REGION o qi g Ty=25C g x z < o Oo > iva 5 fi 3 5 o 8 8 a 55C 8 ; 2 0.1 02 03 #405 o7 10 20 30 50 70 10 03 08 O07 10 20 #30 50 70 10 20 30 ic , COLLECTOR CURRENT (AMP) fs, BASE CURRENT (mA) ON" VOLTAGES SWITCHING TIME Vee=20V lofa=250 las = lao Tye25C $ 3 a Veseveat) @le/la=250 2 rs BE(sat) B F g ~~ > Ver@ Vc_e=3.0V Veejsety @ lolp=250 od 02 03 0.5 1.0 20 3.0 5.9 10 o41G3 02 03 05 O07 10 20 3.0 50 70 10 Ic , COLLECTOR CURRENT (AMP) le , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate |c-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typiq=150 C;T is variable depending on conditions. second breakdown Bonding Wire Limit pulse limits are valid for duty cycles to 10% provided rere Lined Limit Typist 50C,At high case temperatures, thermal limita - at T.=25C (Singe Puse) = tion will reduce the power that can be handied to values less than the limitations imposed by second breakdown. Ie, COLLECTOR CURRENT (Amp) 1.0 2.0 40 60 10 20 40 60 80 100 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)