~ Numerical Index 2N1869 -2N1983 al> MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS sje = = z z= GS | ce) REPLACE | PAGE Po |S] Ty | Vee | Vee | = Ire @ Ie Versan @ Ie 2) | We 1/5 | ment | numer | USE & 5 2 el h |B) 2ls =\a @ 25C | B} C | (volts) | (volts) |S | (min) (max) 5] (volts) = 3 s\s 2N1869 thru Thyristors, see Table on Page 1-154 2N1885 2N1886 S]N HPA 20W |] C 4175 60 60 0 20 80 0.54 1.0A 2,0M | T 2N1889 S| N | 2N3498 8-232 | RFA 800M | A | 200 100 80 R ]| 40 | 120 150M 150M 30 E 50M |T 2N1890 S| WN | 2N3499 8-232] RFA 800M | A | 200 100 80 R }100 | 300 150M 150M 50 E 60M | T 2N1891 GIN BMS 150M | A 85 25 15 0 25 100M 100M 5.0M |B 2N1892 G| P MSS 150M | A 85 30 15 0 40 | 200 10M 10M 30 E 5.0M |B 2N1893 S| N ] 2N3498 8-232] RFA 800M | A | 200 120 | 100 R 40 | 120 150M 150M 30 E 50M | T 2N1893A |S] N | 2N3498 8-232 | HPA 0.8W ] A | 200 140 80 0 40} 120] 0.154 0.154 30 E 100M | T 2N1894 S]N LPA 200 60 60 R 12 60 1.0A 1.04 2N1895 S|N LPA 200 80 80 R 12 60 1.0A 1.0A 2N1896 S|N LPA 200 60 60 |R | 45 | 135 1.0A 1.0A 25M | T 2N1897 S|N LPA 200 80 80 JR | 45} 135 L.OA 1.0A 25M | T 2N1898 S|N LPA 200 100 | 100 R 45 4135 1, 0A 0A 25M |T 2N1899 S/N PHS 125w }c | 150 140 50 0 10 30 10A 1QA 30M | T 2N1900 SN HPA 125wW | c | 150 140 30 Qo 18. LOA 1QA 50M | T 2N1L901L S|N PHS 125W | C | 150 140 5 0 20 60 LOA 10A 50M | T 2N1902 S|N PHS 125W | Cc | 150 140 50 0 10 30 LOA 1.0 10A 50M | T 2N1903 S|N HPA 125W 1C | 150 140 50 Oo }8.0 LOA 2.0 10A 50M | T 2N1904 S|N PHS 125W }C | 150 140 50 oO 20 60 LOA 1.0 LOA 50M} T 2N1905 G] P } 2N2832 7-91 LPA 30W } Cc | 100 100 50 0 50 | 150 1.0A 1.0 5.0A 30 ]E 2N1906 G | P } 2N2832 7-91 LPA 30W | c | 100 130 60 0 75 1 250 1.0A 5.0 5.0A SO YE 2N1907 G{P | 2N2832 7-91 HPA 60W | Cc } 100 100 40 0 1.0 I5A 10M | T 2N1907A |G|P HPA 60w | 100 40 30 1170 10A 0.7 10A 2.0/8 2NL908 G|P | 2N2833 7-921 HPA 60w 1c {100 130 50 0 1.0 154 10M |)T 2NLOO8A | G | P HPA 60W | C 130 50 0 30 1170 104A 0.7 10A 42.0 E 2N1909 thru Thyristors, see Table on Page 1-154 2N1916 2N1917 $|P CHP |0.25W | A [175 25 18.0 0 25 E 16M |T 2N1918 S{P CHP ,0,.25W |A |175 25 18.0 0 25 E 10M {T 2N1919 S|P CHP [0.25W [A |175 40 18 Q 0.003 1.0M |B 2N1920 SP CHP | 0.25W | A |175 40 18 Go 0.004 1.OM |B 2N1921. s|P CHP | 0.25W |A | 175 50 50 0 0,005 1.0M |B 2N1922 S| P CHP |0.25W |A |175 80 80 0 0.005 1.0M |B 2N1923 SYN AFA 750M ]A | 150 85 85 0 14.0 390 7.0 20M 28 E 2N1924 G]P 6-37 AFA 225M |A {100 60 | 40 R 34 65 20M 0.11 20M 30 E 1,0M |B 2N1925 G]P 6-37 AFA 225M [A $100 60 40 R 53 90 20M 0.1L 20M | 44 E 1.3M [B aNtoss GIP 6-37 AFA 225M |A | 100 60 40 R 72 1121 20M 0.11 20M 60 E 1.5M |B thru Thyristors, see Table on Page 1-154 2N1935 2N1936 SIN LPA 150W |C |175 125 60 oO 17.0 50 10A 0.75 10A 15 E 4.0M |T 2N1937 S|N LPA 150W |c |175 125 80 0 17.0 50 LOA 0.75 10A 15 E 4.0M |T 2N1940 G]P HPA 3.5W [Cc | 100 30 15 0 [5.0 40M 1.8 200M 2N1941 SIN AFA O.6W [A [175 45 30 R {| 30 [150 10M 1.5 5.0M | 40 E 60M |T 2N1942 GIP MSS O.2w fA 85 20 10 0 20 60 Q.2A 5.0M |B 2N1943 S|N AFA 800M |A | 200 60 60 0 30 90 200M 5.0 200M 12 E 2N1944 S|N MSS O.6W [A 175 20 20 R {150 |450 1.0M 100 E 60M | T 2N1945 SiN MSS 0.6W [A 1175 30 30 R ]150 | 450 1L.OM 100 E 60M {T 2N1946 S|N MSS O.6W [A 1175 40 40 R [150 |450 1.0M 100 E 60M |T 2N1947 S|N MSS 0.6W A |175 20 20 R 4500 | 800 O.1A 100 E 60M |T 2N1948 S|N MSS 0.6W [A |175 30 30 R [500 | 800 O.LA 100 E 60M |T 2N1949 S|N MSS 0.6W |A [175 40 } 40 R {500 | 800 O.1A 100 E 60M |T 2N1950 SIN MSS 0.6W JA [175 20 20 R {250 | 500 O.1A 75 E 60M /T 2N1951 S|N MSS O.6W FA 1175 30 30 R |250 | 500 O.1A 75 EB 60M {T 2N1952 S|N MSS O.6W }A 4175 49 ) 40 R {250 | 500 O.1A 75 \E 60M |T 2N1953 S|N AFA 0.6W [A 1175 20 20 Ss 15 {150 10M 28 E 40M |T 2N1954 GP | 2N651 6-20 MSS 200M |A | 100 60 20 0 30 [120 20M 0.3 20M 2N1955 G | P {| 2N1190 6-28 | MSS 200M |A {100 60 18 0 50 | 200 20M }0.175 20M 2N1956 G|P | 2N651 6-20 | MSS 200M |A |100 60 16 0 30 1120 20M [0.175 20M 2N1957 G | P | 2N1187 6-28 MSS 200M |A |100 60 14 0 30 120 20M |0.175 20M 2N1958 S |{N | 2N2537 8-151 | HSS 600M {A ]175 60 40 R 20 60 150M 0.45 150M 100M |T 2N1958A |S | N | 2N2537 8-151 | HSS 600M |A 1175 60 40 R 20 60 150M 0.45 150M LOOM |T 2N1959 S|N 8-100 | HSS 600M |A {175 60 40 R 4Q |120 150M 0.45 150M |1.0 E 2N1959A |S | N | 2N2537 8-15] | HSS 600M |A |175 60 40 R 40 1120 150M 0.45 150M 100M 2N1960 GIP HSS 150M }A |100 15 15 25 10M 0.16 10M 2N1961 G|P HSS 150M ]A [100 12 12 Ss 20 10M 0.20 10M 2N1962 S | N | 2N834 8-54 HSS 400M |A [175 40 20 R 20 60 10M 0.25 10M 200M |T 2N1963 S |N | 2N834 8-54 HSS 400M |A [175 30 15 R 25 10M 0.16 10M 200M |T 2N1964 S 1] N | 2N2539 8-15 RSS 400M |A |175 60 40 R 20 60 150M 0.45 150M 100M |T 2N1965 S LN | 2N2539 8-15 HSS O.4W ;A 1175 60 40 R 49 [120 [0.15A 0.45 [0.154 100M |[T 2N1966 GP SPP |0.12W }A 75 35 15 R 2N1967 GP SPP |0.12W JA 75 35 15 R 2N1968 G|P SFP |0.1L2W [A 75 35 18 R 2N1969 G|P MSS 150M |A 85 30 15 0 50 }200 200* 10M |B 2N1970 GIP 7-74 LPA 150W |C {100 100 50 B 17 40 5.0A 1.0 124 5.0K |E 2N1971 G | P |2N2140 7-78 LPA 100 80 | 40 0 25 60 O.5A 0.9 3,0A 15K |E 2N1972 S |N [2N2219 8-108 | RFA 600M {A |175 60 30 R {110 | 350 50M 2.0 50M 40 E 50M |T 2N1973 S |N | 2N2219 8-108 | AFA 800M |A |200 100 80 R 75 10M 1.2 50M 76 E 60M {T 2N1974 S |N | 2N3498 8-232 | AFA 800M |A |200 100 80 R 35 10M 1.2 50M 36 EB 50M 1T 2N1975 S |N | 2N3498 8-232 | AFA 800M |A }200 L100 80 R 15 LOM 1.2 50M 18 E 40M |T 2N1978 SIN HPA 30W |}C |200 60 40 R 20 500M 1.5 1.04 40M |T 2N1980 GIP 7-74 LPA 170W |c 1100 50 30 Q 50 [100 5.0A 0.5 5.0A 3.0K |E 2N1981 GIP 7-74 LPA 170W |Cc |100 70 40 0 50 | 100 5.04 0.5 5.04 3.0K {E 2N1982 G iP 7-74 LPA 170W jc |100 90 50 0 50 |100 5.04 0.5 5.04 3.0K JE 2N1983 S |N | 2N2218 7-808 | AFA 600M FA |150 50 25 0 70 E 40M |T 1-123Germanium Milliwatt Transistors - GERMANIUM MILLIWATT TRANSISTORS This line of low-frequency, low-power transistors consists of a wide selection of highly reliable germanium PNP devices designed for general] purpose switching, amplifier, and control applications. The line is generally characterized by devices having a power rating to 225 mW, a maximum operating temperature range from -65C to +100C, anda typical cutoff frequency (Eo) to 8 MHz. QUICK SELECTION GUIDE FOR AMPLIFIER / OSCILLATOR AND SWITCHING APPLICATIONS TO 20 KILOCYCLES The following transistors merit first consideration within the specified gain- voltage groups. All of the specified devices have collector power dissipation ratings (P,) of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3 Germanium Milliwatt Transistors NUMERICAL-ALPHABETICAL LISTING (continued) MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY and Vcer Nee @ Vee & Ic fap Hi-Rel Tyoe Pp Ts |Veso] (R= 10k)| Ic - typ Type yp mw | C |volts] volts | mA | min max | volts | mA | MHz 2N1193 200 | 100] 40] 25 200 | 100 250 6 1) 2.5 2N1194 200 | 100 | 40] 25 200 | 190 500 6 ee) 2N1408 150 | 100] 50] 50@ 200 10 1 1@ 2N1413 225 | 100] 35] 25 500 23 65 1 20 |0.8@ 2N1415 225 | 100! | 25 500 53 1 20 |1.3@ 2N1705 200 | 100] 18] 12 400 70 hge | 150 6 1 |45 2N1706 200 | 100) 25] 18 400 50 hfe |150 5 10 | 35 2N1707 200 | 100] 30] 25 400 30 hge | 150 5 10 | 35 2N1924 225 | 100| ]| 40 500 34 65 1 20 | 1.0@ 2N1925 225 | 100| | 40 500 53 90 1 20 | 1.30 2N1926 225 | 100| ]| 40 500 72 121 1 20 |1.5@ 2N2042 200 | 100 | 105 | 55 200 20 50 0. 35 5 | 0.5 2N2042A 2N2043 200 | 100 | 105] 55 200 40 100 0. 35 5 | 0.75G) }2N2043A 2N2i71 225 | 100 | 50| 25 400 | 110 250 1.0] 20 | 7.5 2N3427 200 | 100] 45] 30 500 | 100 350 1 }100 | 6.0 2N3428 200 | 100} 45] 30 500 | 150 400 1 {100 | 8&0 MA112 175 s5 | 15] 200 30 hy, | 70 6 1 MA113 175 85} 15} 200 50 hye | 125 6 1 = MA114 175 85} 15; 200 | 100 h- [250 6 1 ~ MA115 175 65 | 15} 200 30 hp. [125 6 1 - MAIL1I6 175 85, is{ 200 Oh, 1250 6 1 = MA1I7 175 85 | i5| 200 30 hy. [250 6 1 - MA286 175 85 | 10/ 200 14hp | 40 6 1 - MA287 175 85 | 10] 200 30 hy. |250 6 1 _ MA288 175 85] 10; 200 | 180h. | 6 1 MA681 200 | 1001 60] 60 500 30 = 1 10 | 0.756 MA882 200 | 100] 60] 60 500 40 _ 1 10 | 1.0 MA883 200 | 100} 6a! 60@ 500 15 1 10 | 1.256) MA884 200 100 | 60} 60@ 500 | 125 _ 1 10 1.75@ MA885 200 | 100! 50] 50@ 500 15h, | 40 6 1 | 0.75@ MAE86 300 | 100 | 50; 50@ 500 30h, | 70 6 1 | 0.756 MA887 200 | 100] 50! 50@ 500 50 hye 120 6 1 | 1.25 MA888 200 | 100} 50] 50@ 500 | 100 hie 225 6 1105 @ MA889 200 | 100] 50} 50@ 500 | 190h,- |400 6 1 _ MAg09 150 | 100 | 751 35@ 2.00 20 | . 35 5 MAS10 150 | 100| 90] 45@ 200 20 . 35 5 MA1702 | 200 | 100] 45] 30 500 | 200 1 {100 | 7.0 min MA1703 | 200 | 100 | 25] 25 500 | 100 350 1 [100 | 3.0 min MA1704 | 200 | 100] 25] 25 500 | 150 400 1 |100 | 5.0 min MA1705 | 200 | 100] 25] 25 500 | 200 i |100 | 6.0 min MA1706 {200 | 100] 15] 15 500 | 100 350 1 [100 | 3.0 min MA1707 } 200 | 100} 15] 15 500 | 150 400 1 }|100 } 4.0 min MaAi708 | 200 | 100 | 15| 15 500 | 200 1. {100 | 5.0 min @HiRel @le @le @BVces Minimum @Vceo @ Ree = 1K 6-5 WiioirrewiiiWiWii WV 9 $ ivr'V WW OlLo\\ DC6D$DWiww WMWUXWGermanium Milliwatt Transistors 2N1924 thru 2nN1926 Vos = 60 V hee - to 72 (min) fa, - to 1.5 MHz (min) PNP germanium transistors for general purpose, low- frequency applications. Characteristics curves similar to 2N524-2N527 series. CASE 31 (TO-5) Base connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Base Voltage Vos 60 Vdc Collector-Emitter Voltage Voro 40 Vde Emitter-Base Voltage Vier 25 Vdc Collector Current la 500 mAdc Junction and Storage Temperature Ty & Tete ~65 to +100 C Power Dissipation at 25C Free Air Py 225 mW ELECTRICAL CHARACTERISTICS (tc = 25C unless otherwise noted) Characteristics Symbol | Min | Max Unit Collector Cutoff Current I - 10 pAde Vewn = -45 Vde, I, = 0 CBO CB > E Emitter Cutoff Current I ~ 10 pAdc Ven = -25 Vdc, 1, = 0 EBO EB ~~ & *e > Collector-Base Voltage Vopo 60 - Vdc Iq = 200 pAdc, I, = 0 Collector-Emitter Voltage Vorx 50 - Vde In = 50 pAdc, Var = +1,5 Vdc, Ror = Collector-Emitter Voltage VoER 40 - Vde Ia = 0.6 mAdc, Ror =10K Punch-Thru Voltage Vep =1Vdc, VTVM Z 2 1 Megohm) Vot 50 - Vde 6-37Germanium Milliwatt Transistors - 2N1924 thru 2N1926 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristics Symbol} Min | Max | Unit DC Current Gain hep In = 20 mAdc, Vor = -1 Vde 2N1924 34 65 - 2N1925 53 90 2N1926 72 121 DC Current Gain her Ia = 100 mAdc, Vor = -1 Vde 2N1924 30 - - 2N1925 Al - 2N 1926 65 - Collector-Emitter Saturation Voltage Vor (SAT) I, = 1,33 mAdc, In = 20 mAdc 2N1924 50 110 mVdc ln = 1,0 mAdc, I, = 20 mAdc 2N1925 55 110 I, = 0.67 mAdc, I, = 20 mAde 2N1926 60 110 Base Input Voltage Ver Vor = -1 Vde, In = 20 mAdc 2N1924 200 300 mVdc 2N1925 190 2:90 2N1926 180 2180 Output Capacitance; Input AC Open Circuit Cop ~ 30 pF Yop = -5 Vdc, I, = 1mAdc, f = 1 MHz Frequency Cutoff fob Yop = -5 Vdc, Ib = 1 mAdc 2N1924 1.0} - MHz 2N1925 13 | - 2N 1926 15) - Small-Signal Short-Circuit Forward-Transfer Current Ratio hee Vor = -5 Vdc, I, = 1 mAdc, f = 1 kHz 21924 30 64 - 2N1925 44 88 2N1926 60 120 Small-Signal Open Circuit Output Admittance h,, e Vor = -5 Vde, Ik = 1 mAdc,f = 1 kHz 2N1924 15 60 umho 2N1925 20 65 2N1926 25 10 Small-Signal Open-Circuit Reverse-Transfer Voltage Ratio he Vor = -5 Vdc, I = 1mAdc, f = 1 kHz -4 2N1924 2 8 X10 2N1925 3 9 2N1926 4 10 Small-Signal Short-Circuit Input Impedance he, Vor = -5 Vdc, I = 1 mAdc, f = 1 kHz 2N1924 700 2200 ohms 2N1925 1200 3200 2N1926 1500 4200 6-38