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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11A1M Rev. 1.1
May 2017
H11A1M
6-Pin General Purpose Phototransistor Optocoupler
Features
• Minimum Current Transfer Ratio, 50 % at IF = 10 mA,
VCE = 10 V
• Safety and Regulatory Approvals:
– UL1577, 4,170 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
Description
The general purpose optocoupler consists of a gallium
arsenide infrared emitting diode driving a silicon photo-
transistor in a standard plastic six-pin dual-in-line
package.
Schematic Package Outlines
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
2
1
3NC
5
6
4
Figure 2. Package Outlines
Figure 1. Schematic
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11A1M Rev. 1.1 2
H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only withi n the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test wi th tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over-Voltage 6000 Vpeak
External Creepage 7mm
External Clearance 7mm
External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm
DTI Distance Through Insulation (Insulation Thickness) 0.5 mm
TSCase Temperature(1) 175 °C
IS,INPUT Input Current(1) 350 mA
PS,OUTPUT Output Power(1) 800 mW
RIO Insulation Resistance at TS, VIO = 500 V(1) > 109
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11A1M Rev. 1.1 3
H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exp osure to stresses above the reco mmended op erating conditions may affe ct device reliabil ity.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwi se specified.
Symbol Parameter Value Unit
TOTAL DEVICE
TSTG Storage Temperature -40 to +125 °C
TOPR Operating Temperature -40 to +100 °C
TJJunction Temperature -40 to +125 ºC
TSOL Lead Solder Temperature 260 for 10 seconds °C
PDTotal Device Power Dissipation @ TA = 25°C 270 mW
Derate Above 25°C 2.94 mW/°C
EMITTER
IFDC/Average Forward Input Current 60 mA
VRReverse Input Voltage 6 V
IF(pk) Forward Curren t – Peak (3 00 µs, 2% Duty Cycle) 3 A
PDLED Power Dissi pation @ TA = 25°C 120 mW
Derate Above 25°C 1.41 mW/°C
DETECTOR
VCEO Collector-to-Emitter Voltage 30 V
VCBO Collector-to-Base Voltage 70 V
VECO Emitter-to-Collector Voltage 7 V
PDDetector Power Dissipation @ TA = 25°C 150 mW
Derate Above 25°C 1.76 mW/°C
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11A1M Rev. 1.1 4
H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristic s
Transfer Characteristics
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
VFInput Forward Voltage IF = 10 mA 1.18 1.50 V
IRReverse Leakage Current VR = 6.0 V 0.001 10 µA
DETECTOR
BVCEO Collector-to-Emitter Breakdown Voltage IC = 1.0 mA, IF = 0 30 100 V
BVCBO Collector-to-Base Breakdown Voltage IC = 100 µA, IF = 0 70 120 V
BVECO Emitter-to-Collector Breakdown Voltage IE = 100 µA, IF = 0 7 10 V
ICEO Collector-to-Emitter Dark Current VCE = 10 V, IF = 0 1 50 nA
ICBO Collector-to-Base Dark Current VCB = 10 V 20 nA
CCE Capacitance VCE = 0 V, f = 1 MHz 8 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
DC CHARACTERISTICS
CTR Current Transfer Ratio,Collector-to-
Emitter IF = 10 mA, VCE = 10 V 50 %
VCE(SAT) Collector-to-Emitter Saturation Voltage IC = 0.5 mA, IF = 10 mA 0.4 V
AC CHARACTERISTICS
TON Non-Saturated Turn-on Time IF = 10 mA , VCC = 10 V,
RL = 100 (Figure 13) 2µs
TOFF Turn-off Time IF = 10 mA , VCC = 10 V,
RL = 100 (Figure 13) 2µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS
CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VI-O = ±500 VDC,
TA = 25°C 1011
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11A1M Rev. 1.1 5
H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
Typical Performance Curves
Figure 4. Normalized CTR vs. Forward Current
6 8 10 12 14
I
F
- FORWARD CURRENT (mA)
024 618102
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0 V
TA = 25°C
Normalized to
IF = 10 mA
Figure 5. Normalized CTR vs. Ambient Temperature
-200 204060
T
A
- AMBIENT TEMPERATURE (°C)
-60 -40 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5 mA
IF = 10 mA
IF = 20 mA
Normalized to
IF = 10 mA
TA = 25°C
10
I
F
- LED FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
Figure 3. LED Forward Voltage vs. Forward Current
1 100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = -55°C
TA = 100°C
Figure 7. CTR vs. RBE (Saturated)
100
R
BE
- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20 mA
IF = 10 mA
IF = 5 mA
VCE= 0.3 V
Figure 6. CTR vs. RBE (Unsaturated)
100
R
BE
- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5.0 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
0.01 10
0.001
0.01
0.1
1
10
100
I
F
= 5 mA
I
F
= 20 mA
I
F
= 10 mA
Figure 8. Collector-Emitter Saturation Voltage
vs. Collector Current
0.1 1
I
C
- COLLECTOR CURRENT (mA)
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
F
= 2.5 mA
T
A
= 25˚C
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11A1M Rev. 1.1 6
H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
Typical Performance Curves (Continued)
Switching Time Test Circuit and Waveforms
Figure 13. Switching Time Test Circuit and Waveforms
NORMALIZED ton - (ton(R
BE
) / ton(open))
RBE - BASE RESISTANCE (kΩ)
Figure 10. Normalized ton vs. RBE
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10 V
IC = 2 mA
RL = 100 Ω
SWITCHING SPEED - (μs)
Figure 9. Switching Speed vs. Load Resistor
110
R - LOAD RESISTOR (kΩ)
0.1 100
0.1
1
10
100
1000
Toff
IF = 10 mA
VCC = 10 V
TA = 25°C
Tr
Ton
Tf
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10 V
IC = 2 mA
RL = 100 Ω
NORMALIZED toff - (toff(R
BE
) / toff(open))
10 100 1000 10000 100000
RBE - BASE RESISTANCE (kΩ)
Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature
40 60
TA - AMBIENT TEMPERATURE
(°C)
0 20 80 100
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
10000
V
CE
= 10 V
T
A
= 25°
C
OUTPUT PULSE
INPUT PULSE
trtf
INPUT
IF RL
RBE
VCC = 10 V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce IC = 2 mA
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11A1M Rev. 1.1 7
H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
Reflow Profile
Figure 14. Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>24°C = 42 s
Time above
183°C = 90 s
360
1.822°C/s Ramp-up rate
33 s
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11A1M Rev. 1.1 8
H11A1M — 6-Pin General Purpose Phototransistor Optocoupler
Ordering Information
Marking Information
Figure 15. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
H11A1M DIP 6-Pin Tub e (50 Units)
H11A1SM SMT 6-Pin (Lead Bend) Tub e (50 Units)
H11A1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
H11A1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Uni ts)
H11A1SVM SMT 6-Pi n (Lead Bend), DIN EN/IEC60747-5-5 Option Tub e (50 Units)
H11A1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
H11A1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 One-Digit Year Code, e.g., “6”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
H11A1
V X YY Q
1
2
6
43 5
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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