01/99 B-3
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: 2N3821 2N3822 Process NJ32
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 – 0.1 nA VGS = – 30V, VDS = ØV
– 0.1 – 0.1 µA VGS = – 30V, VDS = ØV TA= 150°C
– 0.5 – 2 V VDS = 15V, ID= 50 µA
Gate Source Voltage VGS – 1 – 4 V VDS = 15V, ID= 200 µA
VV
DS = 15V, ID= 400 µA
Gate Source Cutoff Voltage VGS(OFF) – 4 – 6 V VDS = 15V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 0.5 2.5 2 10 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) nA VDS = 15V, VGS = – 8V
µA VDS = 15V, VGS = – 8V TA= 150°C
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) VGS = ØV, ID= ØV f = 1 kHz
Common Source gfs 1500 4500 3000 6500 µS VDS = 15V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source | Yfs | 1500 3000 µS VDS = 15V, VGS = ØV f = 100 MHz
Forward Transmittance
Common Source Output Conductance gos 10 20 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 66pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 22pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit ¯eN200 200 nV/Hz VDS = 15V, VGS = ØV f = 10 Hz
Input Noise Voltage
Noise Figure NF 5 5 dB VDS = 15V, VGS = ØV f = 10 Hz
RG= 1M
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Databook.fxp 1/13/99 2:09 PM Page B-3