Product data
Supersedes data of 1997 Sep 29
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03
INTEGRATED CIRCUITS
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2
2001 Aug 03 853-0949 26836
DESCRIPTION
The 5532 is a dual high-performance low noise operational amplifier.
Compared to most of the standard operational amplifiers, such as
the 1458, it shows better noise performance, improved output drive
capability and considerably higher small-signal and power
bandwidths.
This makes the device especially suitable for application in
high-quality and professional audio equipment, instrumentation and
control circuits, and telephone channel amplifiers. The op amp is
internally compensated for gains equal to one. If very low noise is of
prime importance, it is recommended that the 5532A version be
used because it has guaranteed noise voltage specifications.
FEATURES
•Small-signal bandwidth: 10 MHz
•Output drive capability: 600 Ω, 10 VRMS
•Input noise voltage: 5 nV/√Hz (typical)
•DC voltage gain: 50000
•AC voltage gain: 2200 at 10 kHz
•Power bandwidth: 140 kHz
•Slew rate: 9 V/µs
•Large supply voltage range: ±3 to ±20 V
•Compensated for unity gain
PIN CONFIGURATIONS
N, D8 Packages
D Package1
NOTE:
1. SOL and non-standard pinout.
7
6
54
3
2
1
B
A
V+
OUTPUT B
INVERTING INPUT B
NON-INVERTING INPUT B
OUTPUT A
INVERTING INPUT A
NON-INVERTING INPUT A
V-
TOP VIEW
–INA
+INA
NC
–VCC
NC
NC
+INB
–INB
NC
NC
NC
OUTA
1
2
3
4
5
6
7
89
10
11
12
13
14
16
15
+VCC
OUTB
NC
NC
TOP VIEW
SL00332
8
Figure 1. Pin Configurations
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Small Outline Package (SO) 0 °C to 70 °C NE5532AD8 SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 °C to 70 °C NE5532AN SOT97-1
16-Pin Plastic Small Outline Large (SOL) Package 0 °C to 70 °C NE5532D SOT162-1
8-Pin Small Outline Package (SO) 0 °C to 70 °C NE5532D8 SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 °C to 70 °C NE5532N SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) –40 °C to +85 °C SA5532N SOT97-1
8-Pin Small Outline Package (SO) –55 °C to +125 °C SE5532AD8 SOT96-1
16-Pin Plastic Dual In-Line Package (DIP) –55 °C to +125 °C SE5532N SOT38-4
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 3
EQUIVALENT SCHEMATIC (EACH AMPLIFIER)
+
_
SL00333
Figure 2. Equivalent Schematic (Each Amplifier)
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
VSSupply voltage ±22 V
VIN Input voltage ±VSUPPLY V
VDIFF Differential input voltage1±0.5 V
Tamb Operating temperature range
NE5532/A 0 to 70 °C
SA5532 –40 to +85 °C
SE5532/A –55 to +125 °C
Tstg Storage temperature –65 to +150 °C
TjJunction temperature 150 °C
PDMaximum power dissipation,
Tamb = 25 °C (still-air)2
8 D8 package 780 mW
8 N package 1200 mW
16 D package 1200 mW
Tsld Lead soldering temperature (10 sec max) 230 °C
NOTES:
1. Diodes protect the inputs against over-voltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6V. Maximum current should be limited to ±10 mA.
2. Thermal resistances of the above packages are as follows:
N package at 100 °C/W
D package at 105 °C/W
D8 package at 160 °C/W
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 4
DC ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; VS = ±15 V, unless otherwise specified. 1, 2, 3
SYMBOL
PARAMETER
TEST CONDITIONS
SE5532/A NE5532/A, SA5532
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max Min Typ Max
UNIT
VOS Offset voltage 0.5 2 0.5 4 mV
Over temperature 3 5 mV
∆VOS/∆T 5 5 µV/°C
IOS Offset current 100 10 150 nA
Over temperature 200 200 nA
∆IOS/∆T 200 200 pA/°C
IBInput current 200 400 200 800 nA
Over temperature 700 1000 nA
∆IB/∆T 5 5 nA/°C
8 10.5 8 16 mA
ICC Supply current Over temperature 13 mA
VCM Common-mode input range ±12 ±13 ±12 ±13 V
CMRR Common-mode rejection ratio 80 100 70 100 dB
PSRR Power supply rejection ratio 10 50 10 100 µV/V
RL ≥2 kΩ; VO = ±10 V 50 100 25 100 V/mV
AVOL
Large
-
signal voltage gain
Over temperature 25 15 V/mV
AVOL
Large-signal
voltage
gain
RL ≥ 600 Ω; VO = ±10 V 40 50 15 50 V/mV
Over temperature 20 10 V/mV
RL ≥ 600 Ω±12 ±13 ±12 ±13
Over temperature ±10 ±12 ±10 ±12
VOUT
Out
p
ut swing
RL ≥ 600 Ω; VS = ±18 V ±15 ±16 ±15 ±16
V
VOUT
Out ut
swing
Over temperature ±12 ±14 ±12 ±14
V
RL ≥ 2 kΩ±13 ±13.5 ±13 ±13.5
Over temperature ±12 ±12.5 ±10 ±12.5
RIN Input resistance 30 300 30 300 kΩ
ISC Output short circuit current 10 38 60 10 38 60 mA
NOTES:
1. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6 V. Maximum current should be limited to ±10 mA.
2. For operation at elevated temperature, derate packages based on the package thermal resistance.
3. Output may be shorted to ground at VS = ±15 V, Tamb = 25 °C. Temperature and/or supply voltages must be limited to ensure dissipation
rating is not exceeded.
AC ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; VS = ±15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SE5532/A, SA5532
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max
UNIT
ROUT Output resistance AV = 30 dB Closed-loop
f = 10 kHz, RL = 600 Ω0.3 Ω
Voltage-follower
Overshoot VIN = 100 mVP-P 10 %
CL = 100 pF; RL = 600 Ω
AVGain f = 10 kHz 2.2 V/mV
GBW Gain bandwidth product CL = 100 pF; RL = 600 Ω10 MHz
SR Slew rate 9 V/µs
VOUT = ±10 V 140 kHz
Power bandwidth VOUT = ±14 V; RL = 600 Ω, 100 kHz
VCC=±18V
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 5
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; VS = ±15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SE5532 NE/SA/SE5532A
UNIT
SYMBOL
PARAMETER
TEST
CONDITIONS
Min Typ Max Min Typ Max
UNIT
VNOISE Input noise voltage fO = 30 Hz 8 8 12 nV/√Hz
fO = 1 kHz 5 5 6 nV/√Hz
INOISE Input noise current fO = 30 Hz 2.7 2.7 pA/√Hz
fO = 1 kHz 0.7 0.7 pA/√Hz
Channel separation f = 1 kHz; RS = 5 kΩ110 110 dB
TYPICAL PERFORMANCE CHARACTERISTICS
GAIN (dB)
GAIN (dB)
TYPICAL VALUES
10 102103104105106107
120
80
40
0
-40
f (Hz)
TYPICAL VALUES
80
60
40
20
0
-55 -25 0 25 50 75 100 +125 -55 -25 0 25 50 75 100 +125
1,4
1,2
0,8
0,4
0
30
20
10
001020
Tamb (oC)
TYP
IO
(mA) II
(mA) VIN (V)
Vp; –VN (V)
Open-Loop Frequency
Response
Output Short-Circuit Current Input Bias Current Input Commom-Mode
Voltage Range
TYPICAL VALUES
60
40
20
0
-20103104105106107108
f (Hz)
RF = 10 kΩ; RE = 100 Ω
RF = 9 kΩ; RE = 1 kΩ
RF = 1 kΩ; RE = ∞
Closed-Loop Frequency
Response
VS = ±15 V
TYPICAL VALUES
102103104105106107
40
30
20
10
0
f (Hz)
(V)
Vo(p-p)
Large-Signal Frequency
Response
(nVń
Hz
Ǹ)
IO = 0
010 20
0
2
4
610–2
10
1
10–1
10–2 10 102103104
f (Hz)
TYP
TYP
IP
IN
(mA)
Vp; –VN (V)
Supply Current Input Noise Voltage Density
Tamb (oC)
SL00334
VS = ±15 V VS = ±15 V
Figure 3. Typical Performance Characteristics
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 6
TEST CIRCUITS
Closed-Loop Frequency Response Voltage-Follower
+
–
5532 (1/2)
100 pF
RS
VIRE
RF
800 Ω
25 Ω
+
–
5532
VIN VOUT
100 pF 600 Ω
V+
V–
SL00335
1 kΩ
Figure 4. Test Circuits
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 7
DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 8
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 9
SO16: plastic small outline package; 16 leads; body width 7.5 mm SOT162-1
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 10
DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 11
NOTES
Philips Semiconductors Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03 12
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may af fect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Contact information
For additional information please visit
http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Koninklijke Philips Electronics N.V. 2002
All rights reserved. Printed in U.S.A.
Date of release: 03-02
Document order number: 9397 750 09563
Data sheet status[1]
Objective data
Preliminary data
Product data
Product
status[2]
Development
Qualification
Production
Definitions
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
