BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V(BR)DSS RDS(ON) ID TA = 25C 100V 6.0 @ VGS = 10V 0.17 * * * * * * * Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1 and 2) Description and Applications Mechanical Data These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology.These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as * * * * * * * Small servo motor control Power MOSFET gate drivers Switching applications Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) * * Drain SOT23 D Gate G S Source Top View Top View Equivalent Circuit Ordering Information (Note 3) Part Number BSS123-7-F BSS123Q-13 BSS123Q-7 Notes: Qualification Commercial Automotive Automotive Case SOT23 SOT23 SOT23 Packaging 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb 2 O 3 Fire Retardants. 3. For packaging details, go to our website at http://www.diodes.com Marking Information Date Code Key Year Code Month Code K23 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D BSS123 Document number: DS30366 Rev. 16 - 2 YM K = SAT (Shanghai Assembly / Test site) C = CAT (Chengdu Assembly / Test site) 23 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) YM ADVANCE INFORMATION Product Summary C23 1 of 5 www.diodes.com March 2012 (c) Diodes Incorporated BSS123 Maximum Ratings @TA = 25C unless otherwise specified Characteristic ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Continuous Pulsed Continuous Drain Current (Note 4) VGS = 10V Symbol VDSS VGSS ID IDM Value 100 20 170 680 Unit V V Symbol PD RJA TJ, TSTG Max 300 417 -55 to +150 Unit mW C/W C mA Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C (Note 4) Operating and Storage Temperature Range Electrical Characteristics @ TA = 25C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 100 - - 0.1 10 50 V A nA nA VGS = 0V, ID = 250A VDS = 100V, VGS = 0V VDS = 20V, VGS = 0V VGS = 20V, VDS = 0V 1.4 370 0.84 2.0 6.0 10 1.3 V mS V VDS = VGS, ID = 1mA VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A VDS =10V, ID = 0.17A, f = 1.0KHz VGS = 0V, IS = 0.34A, Zero Gate Voltage Drain Current IDSS Gate-Source Leakage , Forward ON CHARACTERISTICS (Note 5) Gate Threshold Voltage IGSSF VGS(th) Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time gFS VSD 0.8 80 - Ciss Coss Crss - 29 10 2 60 15 6 pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(on) tr tD(off) tf - - 8 8 13 16 ns ns ns ns VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50 Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. BSS123 Document number: DS30366 Rev. 16 - 2 2 of 5 www.diodes.com March 2012 (c) Diodes Incorporated BSS123 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 2.4 0.6 0.5 0.4 0.3 0.2 0.1 0 1 3 4 2 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 2.0 1.6 1.2 0.8 0.1 5 0.3 0.4 0.5 0.6 0.2 ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current 2.2 1.2 VDS = VGS ID = 250A RDS(ON), NORMALIZED ON-RESISTANCE VGS(th), NORMALIZED THRESHOLD VOLTAGE 0 1.1 1 0.9 0.8 0.7 -50 25 50 0 -25 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 3 Gate Threshold Variation with Temperature VGS = 10V ID = 170m 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 25 75 100 125 150 50 0 TJ, JUNCTION TEMPERATURE (C) Fig. 4 On-Resistance Variation with Temperature 50 40 C, CAPACITANCE (pF) ADVANCE INFORMATION 0.7 30 Ciss 20 Coss 10 Crss 0 0 20 5 15 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance BSS123 Document number: DS30366 Rev. 16 - 2 25 3 of 5 www.diodes.com March 2012 (c) Diodes Incorporated BSS123 Package Outline Dimensions ADVANCE INFORMATION A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D F J L G Suggested Pad Layout Y Z C X BSS123 Document number: DS30366 Rev. 16 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 4 of 5 www.diodes.com March 2012 (c) Diodes Incorporated BSS123 ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2012, Diodes Incorporated www.diodes.com BSS123 Document number: DS30366 Rev. 16 - 2 5 of 5 www.diodes.com March 2012 (c) Diodes Incorporated