BSS123
Document number: DS30366 Rev. 16 - 2 1 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS123
ADVANCE INFORMATION
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) ID
TA = 25°C
100V 6.0 @ VGS = 10V 0.17
Description and Applications
These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance.These products are particularly suited for low voltage,
low current applications such as
• Small servo motor control
• Power MOSFET gate drivers
• Switching applications
Features and Benefits
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• High Drain-Source Voltage Rating
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 1 and 2)
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Part Number Qualification Case Packaging
BSS123-7-F Commercial SOT23 3,000 / Tape & Reel
BSS123Q-13 Automotive SOT23 10,000 / Tape & Reel
BSS123Q-7 Automotive SOT23 3,000 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb 2 O 3 Fire Retardants.
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Equivalent Circuit Top View
Top View
SOT23
D
GS
Source
Gate
Drain
K = SAT (Shanghai Assembly / Test site)
C = CAT (Chengdu Assembly / Test site)
23 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month
(
ex: 9 = Se
p
tember
)
K23
YM
C23
YM
BSS123
Document number: DS30366 Rev. 16 - 2 2 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS123
ADVANCE INFORMATION
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage Continuous VGSS ±20 V
Continuous Drain Current (Note 4) VGS = 10V Continuous ID 170 mA
Pulsed IDM 680
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Max Unit
Power Dissipation (Note 4) PD 300 mW
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) RJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 100 - - V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS - - 0.1 μA VDS = 100V, VGS = 0V
- - 10 nA
VDS = 20V, VGS = 0V
Gate-Source Leakage , Forward IGSSF - - 50 nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
0.8 1.4 2.0 V VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance RDS (ON) - - 6.0 Ω VGS = 10V, ID = 0.17A
- - 10 VGS = 4.5V, ID = 0.17A
Forward Transfer Admittance gFS 80 370 - mS
VDS =10V, ID = 0.17A, f = 1.0KHz
Diode Forward Voltage VSD - 0.84 1.3 V VGS = 0V, IS = 0.34A,
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss - 29 60 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss - 10 15
Reverse Transfer Capacitance Crss - 2 6
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
on
)
- - 8 ns
VGS = 10V, VDD = 30V,
ID = 0.28A, RGEN = 50
Turn-On Rise Time t
r
- - 8 ns
Turn-Off Delay Time tD
(
off
)
- - 13 ns
Turn-Off Fall Time tf - - 16 ns
Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
BSS123
Document number: DS30366 Rev. 16 - 2 3 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS123
ADVANCE INFORMATION
0
0.2
0.7
0134
5
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
V , DRAIN-SOURCE VOLT AGE (V)
Fig. 1 On-Region Characteristics
DS
2
0.6
0.5
0.1
0.3
0.4
0.8
1.2
1.6
0.1 0.2
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESIST A NCE
DS(ON)
I , DRAIN-SOURCE CURRENT (A)
Fig . 2 On- R esistance Variation with Gate Volt age
and Drain -Source C ur r ent
D
2.0
2.4
0.3 0.4 0.5 0.6
0.7
0.8
0.9
-50 075 100 125 150
V N
O
R
MALIZED
T
H
R
ES
H
O
LD V
O
L
T
A
G
E
GS(th),
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
J
1
1.1
1.2
-25 25 50
V =
I = 250µA
DS
D
V
GS
0.4
0.8
1.2
-50 0 75 100 125 150
R
N
O
R
MALIZED
O
N
-
R
ESIS
T
A
N
C
E
DS(ON),
T , JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
J
1.6
1.8
2.2
-25 25 50
0.6
1
1.4
2
V = 10V
I = 170m
GS
D
0
50
05 15
20 25
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
DS
10
40
30
10
20
C
iss
C
oss
C
rss
BSS123
Document number: DS30366 Rev. 16 - 2 4 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS123
ADVANCE INFORMATION
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
BSS123
Document number: DS30366 Rev. 16 - 2 5 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS123
ADVANCE INFORMATION
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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