BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection of wavelengths less than 700nm. The devices have low junction capacitance and thus are capable of fast switching speeds. SUITABLE APPLICATIONS Filtered options !R remote-control for television, hi-fi systems, slide projectors, model cars, trains, etc., garage door, domestic appliances, automobile security. Perfectly matched to GaAs IRED emission. Clear options General purpose light sensing, street lighting. INFRA-RED PIN DIODE PHOTO DETECTORS CHARACTERISTICS at 25C Photo @D | kand Voc lp at Vp Ver Ap/A0.5 Cj ton/tot Device [Sensitive|Package E, =tmWicm? E,=0 [lp =100pA Va=3V | Va=10V Type | Area | Ref. A4=950nm f=1MHz | R, =1kQ Vp_=5V E,=0 rom? pA |mV} nA Vv Vv nm pF ns BPW41D] 7.25 | Fig. 6 [+65|(>25)45|350/2(<30)/ 10 | >32 925/ 25(<40); 50 820 to 1040 BPw41 | 7.25 | Fig. 7 |+65}(>25)45/350)2(<30)| 10 | >32 925/ 25(<40}) 50 820 to 1040 BPW50 5.0. | Fig. 7 |+65|(>20)32|350) 2(<20)| 10 | >32 925/ 20(<30)) 50 820 to 1040 PIN DIODE PHOTO DETECTORS IN CLEAR PLASTIC PACKAGE CHARACTERISTICS at 25C Photo I, and Voc Ip at Va Ver Ap/A0.5 Cj ton/tor Device |Sensitive Package E,=1000lux* Ey=0 = {lg=100pA Va=3V | Va=10V Type Area Ref. VR=5V f=1MHz | Ry =1k2 Ey =0 mm? pA mV] nA Vv ve nm pF nS BPW41C| 7.25 | Fig. 7 |+65)(>50)82)350|2(<30)| 10 | >32 850/ 25(< 40) 50 600 to 1020 BPWS5OC; 5.0 Fig. 7 |65|(>35)56/350]2(<20)| 10 | >32 850/ 20(< 30) 50 600 to 1020 The illumination source is Standard Illuminant A (an unfiltered tungsten filament lamp at 2856K colour temperature). 10-7 SEMICONDUCTOR DICE PHOTOTRANSISTORS/PHOTODARLINGTON Ice at I, at Spectral sensitivity Dice Description Vceo |Vcaol|Veso! Vce= 10V | Vce = 10V range Geometry type v ivlvlosowA | parte nam ZM100 | Photodarlington | 35 35 | 10 1.0 35-160 400-1100 G30 ZM110 | Phototransistor | 35 35) 5 0.025 2-10 400-1100 G31 ZM210 | Phototransistor 35 35 5 0.010 7-35 400-1100 G32 PIN PHOTODIODES pat | 1, at E,= ImWicm? | Spectral sensitivity Dice Description Ver | Va=10V | Va=5V A4=950nm range Geometry type Vv nA pA nm BPW41 | 7.25mm? PIN Photodiode 32 | 2(<30) (>25) 45 400-1100 G33 BPWS50 | 5mm? PIN Photodiode 32 | 2(<20) {>20) 32 400-1100 G34 ZPA200 | 1mm? PIN Photodiode 32 | 1{<10) (>4)7 400-1100 G35 11-12