50C02SS
No.7519-1/4
Applications
•Low-frequency Amplifer, high-speed switching,
small motor drive, muting circuit.
Features
•Large current capacitance.
•Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA].
•Ultrasmall package facilitates miniaturization in end
products.
•Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 5V
Collector Current IC400 mA
Collector Current (Pulse) ICP 800 mA
Collector Dissipation PCMounted on a glass-epoxy board (20✕30✕1.6mm) 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=40V, IE=0 100 nA
Emitter Cutoff Current IEBO VEB=4V, IC=0 100 nA
DC Current Gain hFE VCE=2V, IC=10mA 300 800
Gain-Bandwidth Product fTVCE=10V, IC=50mA 500 MHz
Marking : YN Continued on next page.
NPN Epitaxial Planar Silicon Transistor
Ordering number : ENN7519
50C02SS
52703 TS IM T A-100152
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2159A
[50C02SS]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
0.6
0.25
0.2
0.070.07
1.4
0.45
1
3
2
0.3 0.3
1.4
0.8
0.1
1
3
2
Top View
Side View
Side View
Bottom View
50C02SS
No.7519-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Output Capacitance Cob VCB=10V, f=1MHz 2.8 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA 50 100 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA 0.9 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=05V
T urn-ON T ime ton See specified Test Circuit. 30 ns
Storage T ime tstg See specified Test Circuit. 340 ns
Fall T ime tfSee specified Test Circuit. 55 ns
Switching Time Test Circuit
VRRB
VCC=25VVBE= --5V
++
50Ω
INPUT
OUTPUT
RL
220µF 470µF
PW=20µsIB1
D.C.≤1% IB2
IC=20IB1= --20IB2=200mA
hFE -- IC
IT05108
IC -- VCE
IT05106
IC -- VBE
IT05107
Collector-to-Emitter Voltage, VCE -- mV
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
1.0 10 100 1000
3257 3257 3257
1000
100
10
2
3
5
7
2
3
5
7
0
0
350
400
300
200
250
500
450
200
150
100
50
0
200
300
600
500
400
100
500 1000
800 900100 300 400 600 700 0 0.2 0.4 0.6 0.8 1.21.0
Ta=75°C
--25°C
25°C
VCE=2V
VCE=2V
IB=0
200µA
600µA
1mA
2mA
3mA
5mA
7mA
8mA
30mA
20mA 15mA
10mA
Ta=75°C
25°C
--25°C
IT05411
1.0 23 5 10 100
72357 1000
23 57
2
5
7
5
7
3
2
100
3
10
--25°C
25°C
Ta=75°C
IC / IB=10
VCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
50C02SS
No.7519-3/4
fT -- IC
IT05113
Cob -- VCB
IT05112
VCE(sat) -- IC
IT05110
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- mA
Collector Current, IC -- mA
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Gain-Bandwidth Product, fT -- MHz
0
020 40 60 80 100 120
200
150
100
50
250
140 160
PC -- Ta
IT05114
Collector Dissipation, PC -- mW
Ambient Temperature, Ta -- °C
IT05111
VBE(sat) -- IC
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
1.0 53
100
1000
7
5
3
2
1000100
27 5327 5327
10
2735 2 735
10 100
1.0
10
1.0
7
5
3
2
1.0 23 5357
10
272357
100 1000
10
1.0
0.1
7
5
3
2
7
5
3
2
75°C
Ta= --25°C
25°C
IC / IB=20
f=1MHz
VCE=10V
IT05110
1000
2
3
100
7
5
2
3
7
5
101.0 23 510 100
723 5
723 5
7
1000
IC / IB=50
--25°C
25°C
Ta=75°C
VCE(sat) -- IC
IT05109
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
1.0 23 5 10 100
72357 1000
23 57
2
5
7
3
2
100
3
10
--25°C
25°C
Ta=75°C
IC / IB=20
Base Current, IB -- mA
Ron -- IB
ON Resistance, Ron -- Ω
f=1MHz
0.1
0.1
IT06092
7
5
3
2
10
7
5
3
2
7
5
3
2
1.0
100
32 57 32 57
1.0 10
OUT
IN 1kΩ
1kΩ
IB
Mounted on a glass-epoxy board(20✕30✕1.6mm)
50C02SS
No.7519-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2003. Specifications and information herein are subject
to change without notice.
PS
