DS30026 Rev. C-5 1 of 3 2N7002-01
www.diodes.com ã Diodes Incorporated
2N7002-01
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·Low On-Resistance: RDS(ON)
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS £ 1.0MWVDGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
ID
115
73
800
mA
Total Power Dissipation (Note 1)
Derating above TA = 25°CPd200
1.60 mW
mW/°C
Thermal Resistance, Junction to Ambient RqJA 625 K/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
·Case: SOT-23, Molded Plastic
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking: K7A
·Weight: 0.008 grams (approx.)
Mechanical Data
A
E
JL
M
BC
H
G
D
K
TOP VIEW
D
SG
SOT-23
Dim Min Max
A0.37 0.51
B1.19 1.40
C2.10 2.50
D0.89 1.05
E0.45 0.61
G1.78 2.05
H2.65 3.05
J0.013 0.15
K0.89 1.10
L0.45 0.61
M0.076 0.178
All Dimensions in mm
DS30026 Rev. C-5 2 of 3 2N7002-01
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 60 70 ¾VVGS = 0V, ID = 10mA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°CIDSS ¾¾
1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 1.0 ¾2.0 V VDS =V
GS, ID =-250mA
Static Drain-Source On-Resistance @ Tj = 25°C
@T
j = 125°CRDS (ON) ¾3.2
4.4
7.5
13.5 WVGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID(ON) ¾1.0 0.5 A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ¾¾mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾11 25 pF
Reverse Transfer Capacitance Crss ¾2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾7.0 20 ns VDD = 30V, ID= 0.2A,
RL = 150W,V
GEN = 10V,
RGEN = 25W
Turn-Off Delay Time tD(OFF) ¾11 20 ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS30026 Rev. C-5 3 of 3 2N7002-01
www.diodes.com
0
0.2
0.4
0.6
0.8
1
.
0
01 2 345
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 1 On-Re
g
ion Characteristics
V=10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
5.5V
5.0V
0
1
2
3
4
5
00.2
R,N
O
RMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
I , DRAIN CURRENT (A)
D
Fig. 2 On-Resistance vs Drain Current
V = 5.0V
GS
T=25°C
j
V = 10V
GS
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R,N
O
RMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
T , JUNCTION TEMPERATURE (°C)
j
Fig. 3 On-Resistance vs Junction Temperature
V = 10V, I = 0.5A
GS D
V = 5.0V, I = 0.05A
GS D
0
V , GATE TO SOURCE VOLTAGE (V)
GS
Fig. 4 On-Resistance vs. Gate-Source Voltage
I=50mA
D
I = 500mA
D
1
2
3
4
5
6
0 2 4 6 8 1012141618
R,N
O
RMALIZED
DS(ON)
DRAIN-SOURCE ON-RESISTANCE