ee FAIRCHILD May 1998 Fe SEMICONDUCTOR Tu NDT3055 N-Channel Enhancement Mode Field Effect Transistor NDT3055 General Description Features These N-Channel enhancement mode power field effect # 4A, GOV. Rosy) = 0.100 2 @ Va, = 10 V. transistors are produced using Fairchild's proprietary, , ; . high cell density, DMOS technology. This very high * High density cell design for extremely low Rocio density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power oss, and resistance to transients are needed. High power and current handling capability in a widely used surface mount package. = A SOT-223 SOT-223 G SOT-223* G (J23Z) Absolute Maximum Ratings = T, = 25C unless otherwise noted Symbol | Parameter NDT3055 Units Voss Drain-Source Voltage 60 Voss Gate-Source Voltage - Continuous +20 I Maximum Drain Current - Continuous (Note 1a) 4 A - Pulsed 25 P; Maximum Power Dissipation (Note 12} 3 Ww (Note 1b) 13 (Note 1) 14 Ty Tete Operating and Storage Temperature Range -65 to 150 Cc THERMAL CHARACTERISTICS Rasa Thernal Resistance, Junction-to-Ambient (note 12) 42 CW Rare Thermal Resistance, Junction-to-Case (Note 1) 12 Cw * Order option J23Z for cropped center drain lead. 4-286 NDT3055 Rev.B Electrical Characteristics (T, = 25C unless otherwise noted) Symbol | Parameter | Conditions | Min | Typ | Max | Units OFF CHARACTERISTICS BV oss Drain-Source Breakdown Voltage Vog = OV, |= 250 PA 60 Vv ABV,,/AT, Breakdown Voltage Temp. Coefficient 1,= 250 pA, Referenced to 25C 63 mVfC loss Zero Gate Voltage Drain Current Vos = 48 V, Vgg= OV 10 pA T,=125C 100 pA lesser Gate - Body Leakage, Forward Vos = 20 V, Vig = OV 100 nA legsn Gate - Body Leakage, Reverse Veg = 720-V, Vag = 0 V -100 nA ON CHARACTERISTICS (note2) Vesey Gate Threshold Voltage Vos = Veg: Ip = 250 WA 2 3 4 Vv [t=125c | 15 | 24 | 3 Resor Static Drain-Source On-Resistance Vog = 10V, IL=4A 0.084) 0.1 Q [ T,=125C 014 | 0.18 lyon On-State Drain Current Veg = 10 V, Vo5 = 10 V 15 A Ors Forward Transconductance Vog= 15 V, =4A 6 s DYNAMIC CHARACTERISTICS C.. Input Capacitance Vps = 30 V, Veg = OV, 250 pF C,. Output Capacitance # = 1.0 MHz 100 pF Cas Reverse Transfer Capacitance 30 pF SWITCHING CHARACTERISTICS (note 2) boxon Tum - On Delay Time Vo9 = 25 V, I, =1.2A, 10 25 ns t Tum - On Rise Time Vos = 10V, Pocy = 50 02 18 | 50 ns too Tum - Off Delay Time 37 65 ns t Tum - Off Fall Time 30 60 ns Q, Total Gate Charge Vog = 40 V, 1, =4A, 9 15 nc Q, Gate-Source Charge Ves = 10V 23 nc Qn Gate-Drain Charge 26 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current 25 A Veo Drain-Source Diode Forward Voltage Veg = OV, I= 2.5A (ote 2) 0.85 1.2 Vv Notes: 1. R,,.iS the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R.,...is guaranteed by design while R,,, is determined by the user's board design. Typical R,, using the board layouts shown below on FR-4 PCB in a still air environment: a. 42CAV when mounted on a 1 in pad ot b. 95CAN when mounted ona 0.066 in L . 110GW when mounted on a 6.00123, 202 Cu. pad of 20z Cu. in? pad of 20z Cu. iM ob q t | Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0% 4-287 NDT3055. Rev.B SSOELGN NDT3055 Typical Electrical Characteristics tp, DRAIN CURRENT (A) Ip, DRAIN-SOURCE CURRENT (A) R pgiony, NORMALIZED DRAIN-SOURCE ON-RESISTANCE a Vag =10V 0 1 2 3 4 5 Vpg . DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics . y Ip=4a Vgg =10 a 08 a 0.4 ! -50 25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. reel 7 Y= 58 25C [ff 125C Yr Vog = 10V @o | | | | nN ZZ 2 4 6 8 Vgg: GATE TO SOURCE VOLTAGE (Vj Figure 5. Transfer Characteristics. R DS(ON}: NORMALIZED DRAIN-SOQURCE ON-RESISTANCE 0 4 8 12 16 20 Ip, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. a4 = | Ip =2A x eS w 0.3 . w Zz a c 2 3 0.2 Ty = 125C + & Zz 0.1 g Tas 25C x } i Nag . GATE TO SOURCE VOLTAGE (V} Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Ig, REVERSE DRAIN CURRENT (A) Jt + [I ft | [FI KY 0 02 04 0.6 08 1 12 Vgp. BODY DIODE FORWARD VOLTAGE (V} Figure 6. Body Diode Forward Voltage Variation with Current and Temperature. 4-288 NDT3055 Rev.B Typical Electrical Characteristics (continued) g SSOELGN a 2 S iS) 3 a CAPACITANCE (pF) 8 Vas . GATE-SOURCE VOLTAGE (V) 50 f=1MHz 20 Vgg = OV 10 Qg, GATE CHARGE (nC) 0.1 0.3 1 4 10 30 60 Vpg, DRAIN TO SOURCE VOLTAGE (V) Figure 7, Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 80); pooper remo 706, | SINGLE PULSE z S | Ra =110C/wW 5 60 ; | 4 Zz w > 1 x = Cc oO zZ ser @ | Iii, a Veg = 10V : | 2 SINGLE PULSE =-E= 20 Reya= 110 C/W > Ta = 26C ol 02 05 1 2 5 10 30 60 100 boot oo1.-~SCti ti 100 300 Vog. DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. ys - 2 0s D=05 we 2 & o2 5 g on Ryall =r) * Rosa 3 Ayia = 110C we 0.05 -, a - - az i gE | aL 0.02 ~~ 0.025 ae | zE 00 = = = ~ Y eo! 9 wi = = 2 & 0.005 2 24 Ty Ta =P Raya 0.002 IDuty Cycle, D = hi tol| 0.001 da 0.0001 0.001 0.01 04 1 40 100 300 t,, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design 4-289 NDT3055 Rev.B