BZD27C3V6P to BZD27C200P
Document Number 85810
Rev. 2.0, 23-Mar-10
Vishay Semiconductors
www.vishay.com
1
17249
For technical support, please contact: DiodesSSP@vishay.com
Zener Diodes with Surge Current Specification
Features
• Sillicon planar zener diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s
at terminals
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: DO-219AB (SMF)
Weight: approx. 15 mg
Packaging codes/options:
GS18/10 k per 13 " reel (8 mm tape), 10 k/box
GS08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Notes
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
2) TJ = 25 °C prior to surge
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Note
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Parameter Test condition Symbol Value Unit
Power dissipation
TL = 80 °C Ptot 2.3 W
TA = 25 °C Ptot 0.8 1) W
Non-repetitive peak pulse power
dissipation
100 µs square pulse 2) PZSM 300 W
10/1000 μs waveform (BZD27-C7V5P to BZD27-C100P) 2) PRSM 150 W
10/1000 μs waveform (BZD27-C110P to BZD27-C200P) 2) PRSM 100 W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air 1) RthJA 180 K/W
Thermal resistance junction to lead RthJL 30 K/W
Maximum junction temperature Tj150 °C
Storage temperature range TS- 55 to + 150 °C
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Document Number 85810
Rev. 2.0, 23-Mar-10
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
For technical support, please contact: DiodesSSP@vishay.com
Electrical Characteristics
Maximum VF = 1.2 V, at IF = 0.2 A (TJ = 25 °C, unless otherwise specified)
Note
1) Pulse test: tp ≤ 5 ms
Partnumber Marking
code
Working voltage 1) Differential
resistance
Temperature
coefficient
Te s t
current
Reverse current at
reverse voltage
VZ at IZT rdif at IZαZ at IZIZT IRVR
VΩ%/°C mA μA V
min. max. typ. max. min. max. max.
BZD27C3V6P D0 3.4 3.8 4 8 - 0.14 - 0.04 100 100 1
BZD27C3V9P D1 3.7 4.1 4 8 - 0.14 - 0.04 100 50 1
BZD27C4V3P D2 4 4.6 4 7 - 0.12 - 0.02 100 25 1
BZD27C4V7P D3 4.4 5 3 7 - 0.1 0 100 10 1
BZD27C5V1P D4 4.8 5.4 3 6 - 0.08 0.02 100 5 1
BZD27C5V6P D5 5.2 6 2 4 - 0.04 0.04 100 10 2
BZD27C6V2P D6 5.8 6.6 2 3 - 0.01 0.06 100 5 2
BZD27C6V8P D7 6.4 7.2 1 3 0 0.07 100 10 3
BZD27C7V5P D8 7 7.9 1 2 0 0.07 100 50 3
BZD27C8V2P D9 7.7 8.7 1 2 0.03 0.08 100 10 3
BZD27C9V1P E0 8.5 9.6 2 4 0.03 0.08 50 10 5
BZD27C10P E1 9.4 10.6 2 4 0.05 0.09 50 7 7.5
BZD27C11P E2 10.4 11.6 4 7 0.05 0.1 50 4 8.2
BZD27C12P E3 11.4 12.7 4 7 0.05 0.1 50 3 9.1
BZD27C13P E4 12.4 14.1 5 10 0.05 0.1 50 2 10
BZD27C15P E5 13.8 15.6 5 10 0.05 0.1 50 1 11
BZD27C16P E6 15.3 17.1 6 15 0.06 0.11 25 1 12
BZD27C18P E7 16.8 19.1 6 15 0.06 0.11 25 1 13
BZD27C20P E8 18.8 21.2 6 15 0.06 0.11 25 1 15
BZD27C22P E9 20.8 23.3 6 15 0.06 0.11 25 1 16
BZD27C24P F0 22.8 25.6 7 15 0.06 0.11 25 1 18
BZD27C27P F1 25.1 28.9 7 15 0.06 0.11 25 1 20
BZD27C30P F228328150.060.1125122
BZD27C33P F331358150.060.1125124
BZD27C36P F4343821400.060.1110 1 27
BZD27C39P F5374121400.060.1110 1 30
BZD27C43P F6404624450.070.1210 1 33
BZD27C47P F7445024450.070.1210 1 36
BZD27C51P F8485425600.070.1210 1 39
BZD27C56P F9526025600.070.1210 1 43
BZD27C62P G0586625800.080.1310 1 47
BZD27C68P G1647225800.080.1310 1 51
BZD27C75P G2 70 79 30 100 0.08 0.13 10 1 56
BZD27C82P G3 77 87 30 100 0.08 0.13 10 1 62
BZD27C91P G4 85 96 60 200 0.08 0.13 5 1 68
BZD27C100P G5 94 106 60 200 0.09 0.13 5 1 75
BZD27C110P G6 104 116 80 250 0.09 0.13 5 1 82
BZD27C120P G7 114 127 80 250 0.09 0.13 5 1 91
BZD27C130P G8 124 141 110 300 0.09 0.13 5 1 100
BZD27C150P G9 138 156 130 300 0.09 0.13 5 1 110
BZD27C160P H0 153 171 150 350 0.09 0.13 5 1 120
BZD27C180P H1 168 191 180 400 0.09 0.13 5 1 130
BZD27C200P H2 188 212 200 500 0.09 0.13 5 1 150
BZD27C3V6P to BZD27C200P
Document Number 85810
Rev. 2.0, 23-Mar-10
Vishay Semiconductors
www.vishay.com
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For technical support, please contact: DiodesSSP@vishay.com
Electrical Characteristics
Maximum VF = 1.2 V, at IF = 0.2 A (TJ = 25 °C, unless otherwise specified)
Note
1) Non-repetitive peak reverse current in accordance with "IEC 60-1, section 8" (10/1000 ms pulse); see fig. 5
Part number
Rev.
breakdown
voltage
Test current Temperature coefficient Clamping voltage Reverse current at
stand-off voltage
V(BR)R at
Itest
Itest αZ at Itest VCat IRSM 1) IRat VWM
VmA %/°C V A μA V
min. min. max. max . max.
BZD27C7V5P 7 100 0 0.07 11.3 13.3 1500 6.2
BZD27C8V2P 7.7 100 0.03 0.08 12.3 12.2 1200 6.8
BZD27C9V1P 8.5 50 0.03 0.08 13.3 11.3 100 7.5
BZD27C10P 9.4 50 0.05 0.09 14.8 10.1 20 8.2
BZD27C11P 10.4 50 0.05 0.1 15.7 9.6 5 9.1
BZD27C12P 11.4 50 0.05 0.1 17 8.8 5 10
BZD27C13P 12.4 50 0.05 0.1 18.9 7.9 5 11
BZD27C15P 13.8 50 0.05 0.1 20.9 7.2 5 12
BZD27C16P 15.3 25 0.06 0.11 22.9 6.6 5 13
BZD27C18P 16.8 25 0.06 0.11 25.6 5.9 5 15
BZD27C20P 18.8 25 0.06 0.11 28.4 5.3 5 16
BZD27C22P 20.8 25 0.06 0.11 31 4.8 5 18
BZD27C24P 22.8 25 0.06 0.11 33.8 4.4 5 20
BZD27C27P 25.1 25 0.06 0.11 38.1 3.9 5 22
BZD27C30P 28 25 0.06 0.11 42.2 3.6 5 24
BZD27C33P 31 25 0.06 0.11 46.2 3.2 5 27
BZD27C36P 34 10 0.06 0.11 50.1 3 5 30
BZD27C39P 37 10 0.06 0.11 54.1 2.8 5 33
BZD27C43P 40 10 0.07 0.12 60.7 2.5 5 36
BZD27C47P 44 10 0.07 0.12 65.5 2.3 5 39
BZD27C51P 48 10 0.07 0.12 70.8 2.1 5 43
BZD27C56P 52 10 0.07 0.12 78.6 1.9 5 47
BZD27C62P 58 10 0.08 0.13 86.5 1.7 5 51
BZD27C68P 64 10 0.08 0.13 94.4 1.6 5 56
BZD27C75P 70 10 0.08 0.13 103.5 1.5 5 62
BZD27C82P 77 10 0.08 0.13 114 1.3 5 68
BZD27C91P 85 5 0.09 0.13 126 1.2 5 75
BZD27C100P 94 5 0.09 0.13 139 1.1 5 82
BZD27C110P 104 5 0.09 0.13 139 0.72 5 91
BZD27C120P 114 5 0.09 0.13 152 0.65 5 100
BZD27C130P 124 5 0.09 0.13 169 0.59 5 110
BZD27C150P 138 5 0.09 0.13 187 0.53 5 120
BZD27C160P 153 5 0.09 0.13 205 0.48 5 130
BZD27C180P 168 5 0.09 0.13 229 0.43 5 150
BZD27C200P 188 5 0.09 0.13 254 0.39 5 160
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Document Number 85810
Rev. 2.0, 23-Mar-10
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
For technical support, please contact: DiodesSSP@vishay.com
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 3. Power Dissipation vs. Ambient Temperature
0.1
1
10
0.6 0.81.0 1.2 1.4 1.6
17411
IF - Forward Current (A)
VF - Forward Voltage (V)
Max. VF
Ty p. VF
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
CD - Typ. Junction Capacitance (pF)
VR - Reverse Voltage (V)
C5V1P C6V8PC12P
C27P C51P
C200P
C18P
0
1.0
0.5
1.5
2.5
2.0
3.0
0 25 50 75 100 125 150
17413
Ptot - Power Dissipation (W)
Tamb - Ambient Temperature (°C)
Ambient temperature
Tie point temperature
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
0
40
20
120
140
60
100
80
160
0 50 100 150 200
17414
P
RSM
- Max. Pulse Power Dissipation (W)
V
Znom
- Zener Voltage (V)
17415
t
IRSM
(%)
100
90
50
10
t1
t1 = 10 µs
t2 = 1000 µs
t2
BZD27C3V6P to BZD27C200P
Document Number 85810
Rev. 2.0, 23-Mar-10
Vishay Semiconductors
www.vishay.com
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For technical support, please contact: DiodesSSP@vishay.com
Package Dimensions in millimeters (inches): DO219-AB (SMF)
Foot print recommendation:
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
1.4 (0.055)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.85 (0.033)
0.35 (0.014)
1.2 (0.047)
0.8 (0.031)
1.9 (0.075)
1.7 (0.067)
1.08 (0.043)
0.88 (0.035)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
0 (0.000)
5
5
Created - Date: 15. February 2005
17247
Detail Z
enlarged
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Document Number 85810
Rev. 2.0, 23-Mar-10
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
For technical support, please contact: DiodesSSP@vishay.com
Blistertape for SMF Dimensions in millimeters
18513
PS
Document-No.: S8-V-3717.02-001 (3)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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