1090MP 90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 250 Watts Peak Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 65 Volts 3.5 Volts 6.5 Amps Peak - 65 to +150 oC + 200oC ELECTRICAL CHARACTERISTICS @ 25C SYMBOL CHARACTERISTICS POUT PIN PG Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance c VSWR1 TEST CONDITIONS F= 1025-1150 MHz Vcc = 50 Volts PW = 10 sec, DF = 1% MIN TYP MAX UNITS 90 W W dB % 14 8.08 8.5 40 F = 1090 MHz 20:1 FUNCTIONAL CHARACTERISTICS @ 25C BVebo Emitter to Base Breakdown BVces Collector to Emitter Breakdown Hfe DC Current Gain Cob Output Capacitance Thermal Resistance jc1 Note 1: At rated pulse conditions Ie = 1 mA Ic = 10mA Vce = 5V, Ic = 500 mA Vcb = 50 V, f = 1 MHz 3.5 65 15 V V 120 12 0.6 pF C/W o Rev B: Dec 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.