fy, SGS-THOMSON 7 icROELECTROMICS IRF250 ~N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE . Voss Ros(on) | Ip 0.0852 | 30A IRF250 200 V a AVALANCHE RUGGEDNESS TECHNOLOGY = 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) MOTOR CONTROL, AUDIO AMPLIFIERS INDUSTRIAL ACTUATORS DC-DG & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM (case) O G (1) OQ O s (2) ABSOLUTE MAXIMUM RATINGS Symbol oO Parameter ; Value Unit Vos Drain-source Voltage (Vas = 0} 200 Vv Voer |Drain- gate Voltage (Ras = 20 kQ) 200 v Vas Gate-source Voltage + 20 Vv Ip Drain Current (cont.) at T. = 25 C 30 A Ip Drain Current (cont.) at Te = 100 C 19 A lom(e) | Drain Current (pulsed) 120 A Prot Total Dissipation at T, = 25 C 150 w Derating Factor - 1.2 WPS Tstg |Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C () Pulse width limited by safe operatingarea ~ April 1992 1/6 147IRF250 THERMAL DATA | Rin-case [Thermal Resistance Junction-case Max 0.83 C/W Rinj-amp |Thermal Resistance Junction-ambient Max 30 Cw Rinc-s |Thermal Resistance Case-sink Typ 0.4 C/W Tr Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS | Symbol pO Parameter Max Value Unit lar Avalanche Current, Repetitive or Not-Repetitive 30 A (pulse width limited by T. max, 8 < 1%) _ 7. - 4 Eas Single Pulse Avalanche Energy 910 mJ _ _ {starting Tj = 26 C, Ip = lan. Von = 25 V) _ Ear Repetitive Avalanche Energy 15 md pulse width limited by T, max, 8 < 1%) _| lar Avalanche Current, Repetitive or Not-Repetitive 19 A (T; = 100 C, pulse width limited by T. max, & < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol | Parameter Test Conditions Min. Typ. | Max. Unit Vierjoss | Drain-source Ip = 250A Ves =0 200 Vv !Breakdown Voltage loss [Zero Gate Voltage Vos = Max Rating 250 HA Drain Current (Vas = 0) |Vps = Max Rating x 0.8 T. = 125C 1000 HA less Gate-body Leakage Ves=+20V + 100 nA Current (Vos = 0) ON (+) Symbol ! Parameter Test Conditions Min. | Typ. " Max. Unit | Vasith) Gate Threshold Voltage Vps = Ves Ip = 250 pA 2 4 Vv Rosion) |Static Drain-source On |Ves=10V Ip =16A | 0.085 Q Resistance | Ipton) _ |On State Drain Current Vps > Injen X Rosionmax Vas =10V| 30 | A DYNAMIC | Symbol Parameter ; Test Conditions Min. Typ. | Max. | Unit Gts (*) | Forward Vos > Ipton) X Rostonjmax lpn =16A 10 Ss _ 'Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 3200 pF Coss Output Capacitance 800 pF Crss Reverse Transfer 300 pF Capacitance _ - 216 * 57 $33-RomsonELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD (+) Pulsed: Pulse duration = 300 ys, duty cycle 1.5 % (#) Pulse width limited by safe operating area Safe Operating Area Ip(A} 4 0 i > 214 TID.C. OPERATION 10? Thermal Impedance G6C19070 K 1071 ;SINGLE PULSE 07? 1o3 Vps (V) 10 1074 ky SGS-THOMSON ____ - YF wicnosetromes 107 10 Symbol | Parameter \ Test Conditions Min. | Typ. | Max. : 7 nit taton} [Turn-on Time iVop =95V Ib=16A 85 | ns t | Rise Time (Re=4792 Vas=10V 80 | ns tarott) | Turn-off Delay Time (see test circuit) 140 | ns te [Fall Time | 50 | ns Qq [Total Gate Charge llp=30A Ves=10V 125 | nc :Vop = Max Rating x 0.8 | (see test circuit) ee SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. + Typ. I max. | unit Iso Source-drain Current 30 A Ispm(*) | Source-drain Current | 420 A (pulsed) a Vso (*) Forward On Voltage |isp=30A Ves=0 | 46 7 ter Reverse Recovery Isp = 30A di/dt = 100 A/us 450 | ns Time Von =30V Tj) = 150C Qr Reverse Recovery 6 | uc |Charge | 107! t, (s) 3:6 1491PF259 Deratag Curve 7170 Pica (W) 120 &0 40 0 50 100 Tease (C) Output Characteristics Ip (A) 120 80 40 0 5 10 15 20 25 30 Vog{V} Transconductance 9ts(S} 32 24 Oo 10 20 30 40 Ip(A) ve ir 4/6 150 SGS-THOMSON .______. MICROELECTRONICS Output Characteristics GC18480 Ip (A) Vog = 104 8V 40 30 20 8 Vos (v) Transfer Characteristics Ip (A) 100 80 60 40 25C T)=128C oO 2 4 6 8 Ves (} Static Drain-source On Resistance G6C18520 Rosvon) (mo) 80 75 70 65 60 QO 10 20 30 40 Ip (A)Maximum Drain Current vs Temperature Ip (A) 30 25 20 15 10 0 50 100 Te (C) Capacitance Variations C(pF) 5000 4000 3000 2000 1000 Crss 0 20 40 60 80 Vos (V) Normalized On Resistance vs Temperature Ros(on) (norm) 2.0 0.5 Ves =10V Ip =16A -50 ) 50 100 T, (%) tT] IRF250 Gate Charge vs Gate-source Voltage Ves (V) 1 Vps=160V Ip =30A 12 0 40 80 120 Qg(nc) Normalized Breakdown Voltage vs Temperature Vcer)Dss (norm) 0.9 0.8 -50 0 50 100 T; (C) Source-drain Diode Forward Characteristics Isp (A) 0 0.5 1 15 2 Vep() 5/6 SGS-THOMSON MICROELECTRONICS 151IRF250 Unciamped !nductive Load Test Circuit Unclamped Inductive Waveforms V(ar)pss 3.3 MF V3 =_ vi |_| Pw SCOS9EC 5005970 Switching Time Test Circuit Gate Charge Test Circuit 12 RL 2200 | 3.3 T.. a a we Vo . | _ Yo o-- V; =20V=Vewax 1e=CONSI Ves, Re - _ 8 tee ME O.U.T. |__| t Pw _ sc03990 IL 4-4 Pw 6/6 ky SGS-THOMSON _ \/ MICROELECTRONICS 152