PRODUCT CATALOG MACON 0211-25. N-CHANNEL ENHANCEMENT MOS FET | GOOV 6 OA { 20 ABSOLUTE MAXIMUM RATINGS a . % . . PARAMETER SYMBOL UNITS SDF EN6GO JAA Drain-source Volt.(t) VDSS 600 Vde Drain-Gate Voltage : - : SDFENGO JAB | [Restsesie"2i}8e [voor [soo ae 1Gate-Source Voltage ( , FEATURES ~ a Conf inuous ves | 220 Vde . Crain peensn! Continuous ID 6.0 Ade @ RUGGED PACKAGE 7 Drain Current Pulsed(3) 1DM 24 A @ HI-REL CONSTRUCTION Total Power Dissipation PD 100 W @ CERAMIC EYELETS Power Dissipation 0.83 W/C @ LEAD BENDING OPTIONS Derating > 25C : @ COPPER CORED 52 ALLOY PINS Operating & Storage Temp. | TU/Tsig -55 TO +150 c ,@ LOW IR LOSSES Thermal Resistance Rihde 1.2 C/W -|@ LOW THERMAL RESISTANCE Max .Lead temperature TL 300 C @ OPTIONAL MIL-S~-19500 SCREENING : ELECTRICAL CHARACTERISTICS Te =25c ees oe tER ep SCHEMATIC PARAMETER |SYMBOL| TEST CONDITIONS [MIN] TYP |MAx JuNITS () [TERMINAL CONNECTIONS] |Braln-source | Wvier)oss \oooeo WA soo} - | - | Vv G H Gate Threshold iTGATE TT DRAIN Voltage VGS(TH)|VDS=VGS ID=250 NA -(2.0| - [4.5] V 2[DRAIN |[2[source | jCaie cource | icss |ves=220 v | = | = |100] na (S) [3[source [3] GATE Zero Gate VDS=MAX.RATING vGS=0[ - | [250] HA STANDARD BEND Voltage Drain | IDSS. |ypS=0.8 MAX.RATING CONF IGURAT IONS JAA {Current VGS=0 TJ=125C - | [1000] WA Static Drain- VGS=10 V Source On-Stat Oo - | - . 0 Resistance(1) &]ROS(ON) ID=3.0A 1.2 Forward Trans- vDS 2 15 V Conductance (2)| 9fS | ips=3.0A 4.5] - | - [S(0) oo Input Capacitance] CISS | - 415707) - pF S : 93 | Output Capacitance] COSS VGS=OV VDS=25 V - 1155] - pF 1 Reverse Transfer CRSS f=1.0 MHz -~|l6o| - F , Capacitance P Turn-On Delay |td(on) | ypp=300V Zo=100 - - | 35 {| ns Rise Time tr {De 30A tehing ti - | -. | 60] ns Turn-Off Delayltd(off)| ure essentially indepen: |_- | = | 90 | ns elie 33 Fall Time tf dent of operating temp.) [7 |Ts50 | ns "DD" U 1 Total Gate Charge 2 3 : (Gate-Source Plus| Qg - - |80 | nc aie VDS-0.8 MAX-RATING | , ate-Source . =0. : (CUSTOM BEND OPTIONS AVAILABLE ) | Charge Qgs te sha aa CEPT -|}- 42 nc "STANDARD BEND {Gate-Drain | loperating temperature). CONFIGURATIONS JAB gititler") | Gad ~ | ~ | 30] ne SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc=25C ({MLESS_OTHERT PARAMETER SYMBOL TEST CONDITIONS MIN. TYP .JMAX .JUNITS connec Current ig |Modified MOSFET - | - [4.0] A (Body Diode) symbol showing the . integral: reverse Pulse Source P-N junction recti- current (Body ISM |fier (See schematic)| - | - | 16] A Diode Forward IF=6.0A VGS=0V - Voltage (2) | VSD Itea+d5c - 1.5] V -|Tc=+25 C R - Recovery Time | tre | 1F=6.0A - |600 ns (CUSTOM BEND OPTIONS AVAILABLE) di/dt=100A/ NS - Pulse test: Pulse Width <300uS, Duty Cycle <2%. : .Repetitive Rating: Pulse Width Limited By Max.Junction Temperature, 2} TJ = 25C to 150C. 3 A32