IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES HIGH PERFORMANCE CMOS BUFFER IDT54/74FCT827A/B/C FEATURES: DESCRIPTION: - - The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology. - - - - - - - - - - - Faster than AMD's Am29827 series Equivalent to AMD's Am29827 bipolar buffers in pinout/function, speed and output drive over full temperature and voltage supply extremes IDT54/74FCT827A equivalent to FASTTM IDT54/74FCT827B 35% faster than FAST IDT54/74FCT827C 45% faster than FAST IOL = 48mA (commercial), and 32mA (military) Clamp diodes on all inputs for ringing suppression CMOS power levels (1mW typ. static) TTL input and output level compatible CMOS output level compatible Substantially lower input current levels than AMD's bipolar Am29800 series (5 A max.) Military product compliant to MIL-STD-883, Class B Available in the following packages: * Commercial: SOIC * Military: CERDIP, LCC, CERPACK The IDT54/74FCT827 10-bit bus drivers provide high-performance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables for maximum control flexibility. All of the IDT54/74FCT800 high-performance interface family are designed for high-capacitance load drive capability, while providing lowcapacitance bus loading at both inputs and outputs. All inputs have clamp diodes and all outputs are designed for low-capacitance bus loading in highimpedance state. FUNCTIONAL BLOCK DIAGRAM Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 MILITARY AND COMMERCIAL TEMPERATURE RANGES OE 1 OE 2 JULY 2000 1 c 1999 Integrated Device Technology, Inc. DSC-4612/2 IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES 23 Y0 D1 3 22 Y1 D2 4 21 Y2 D3 5 20 Y3 D4 6 19 Y4 D5 7 18 D6 8 D7 9 5 D3 3 2 6 24 Y3 D4 7 23 Y4 NC 8 22 NC Y5 D5 9 21 Y5 17 Y6 D6 10 20 Y6 16 Y7 D7 11 19 Y7 L28-1 14 Y9 GND 12 13 OE 2 Military -0.5 to +7 CAPACITANCE (TA = +25OC, f = 1.0MHz) Commercial -0.5 to +7 0 to +70 -55 to +125 C -55 to +125 -65 to +135 C TSTG Temperature Under Bias Storage Temperature -55 to +125 -65 to +150 C PT Power Dissipation 0.5 0.5 W IOUT DC Output Current 120 120 mA TBIAS 18 LCC TOP VIEW Rating Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Operating Temperature -0.5 to VCC 17 Y8 11 16 Y9 D9 15 OE 2 Y8 14 NC 15 13 GND 10 D8 D8 ABSOLUTE MAXIMUM RATINGS(1) TA 26 Y2 CERDIP/ SOIC/ CERPACK TOP VIEW VTERM(3) 27 25 12 Symbol VTERM(2) 28 1 D9 D24-1 SO24-2 E24-1 4 D2 Y1 2 Y0 D0 INDEX V CC V CC NC 24 D0 1 D1 OE 1 OE 1 PIN CONFIGURATION -0.5 to VCC Unit V V Symbol CIN Parameter(1) Input Capacitance Conditions VIN = 0V Typ. 6 Max. 10 Unit pF COUT Output Capacitance VOUT = 0V 8 12 pF 8-link NOTE: 1. This parameter is measured at characterization but not tested. LOGIC SYMBOL 8-link NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +.5V unless otherwise noted. D 0-9 2. Input and VCC terminals only. 3. Outputs and I/O terminals only. OE 1 OE 2 2 10 10 Y 0-9 IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES FUNCTION TABLE(1) PIN DESCRIPTION Name OEI DI I Description When both are LOW, the outputs are enabled. When either one or both are HIGH, the outputs are High Z. 10-bit data input. YI O 10-bit data output. I/O I Inputs Output OE1 OE2 DI YI Function L L H X L L X H L H X X L H Z Z Transparent Three-State NOTE: 1. H = HIGH L = LOW X = Don't Care Z = High-Impedance DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC-0.2V Commercial: TA = 0C to +70C, VCC = 5.0V 5%; Military: TA = -55C to +125C, VCC = 5.0V 10% Symbol VIH Parameter Input HIGH Level Test Conditions(1) Guaranteed Logic HIGH Level VIL Input LOW Level Guaranteed Logic LOW Level IIH Input HIGH Current VCC = Max. IIL IOZH VI = VCC Input LOW Current Off State (High Impedance) VCC = Max. Output Current IOZL Min. 2 Typ.(2) -- Max. -- Unit V -- -- 0.8 V -- -- 5 A VI = 2.7V -- -- 5(4) VI = 0.5V -- -- -5(4) VI = GND -- -- -5 VO = VCC -- -- 10 VO = 2.7V -- -- 10(4) VO = 0.5V -- -- -10(4) VO = GND -- -- -10 A VIK Clamp Diode Voltage VCC = Min., IN = -18mA -- -0.7 -1.2 V IOS Short Circuit Current VCC = Max.(3), VO = GND -75 -120 -- mA VOH Output HIGH Voltage VCC = 3V, VIN = VLC or VHC, IOH = -32 A VHC VCC -- V VCC = Min. IOH = -300 A VHC VCC -- VIN = VIH or VIL IOH = -15mA MIL. 2.4 4.3 -- IOH = -24mA COM'L. 2.4 4.3 -- VCC = 3V, VIN = VLC or VHC, IOL = 300 A -- GND VLC VCC = Min. IOL = 300 A -- GND VLC(4) VIN = VIH or VIL IOL = 32mA MIL. -- 0.3 0.5 IOL = 48mA COM'L. -- 0.3 0.5 VOL Output LOW Voltage NOTES: 1. For conditions shown as max. or min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient and maximum loading. 3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second. 4. This parameter is guaranteed but not tested. 3 V IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES POWER SUPPLY CHARACTERISTICS VLC = 0.2V; VHC = VCC - 0.2V Symbol ICC Parameter Quiescent Power Supply Current ICCD Quiescent Power Supply Current TTL Inputs HIGH Dynamic Power Supply Current(4) IC Total Power Supply Current(6) ICC Test Conditions(1) VCC = Max. VIN VHC; VIN VLC VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OE1 = OE2 = GND One Input Toggling 50% Duty Cycle VCC = Max. Outputs Open fi = 10MHz 50% Duty Cycle OE1 = OE2 = GND One Bit Toggling VCC = Max. Outputs Open fi = 2.5MHz 50% Duty Cycle OE1 = OE2 = GND Eight Bits Toggling Min. Typ.(2) Max. Unit -- 0.2 1.5 mA -- 0.5 2 mA VIN VHC VIN VLC -- 0.15 0.25 mA/ MHz VIN VHC VIN VLC (FCT) VIN = 3.4V VIN = GND -- 1.7 4 mA -- 2 5 VIN VHC VIN VLC (FCT) VIN = 3.4V VIN = GND -- 3.2 6.5(5) -- 5.2 14.5(5) NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient. 3. Per TTL driven input (VIN = 3.4V); all other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fCP/2 + fiNi) ICC = Quiescent Current ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices) fi = Input Frequency Ni = Number of Inputs at fi All currents are in milliamps and all frequencies are in megahertz. 4 IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES SWITCHING CHARACTERISTICS IDT54/74FCT827A Com'l. Parameter tPLH tPHL tPZH tPZL tPHZ tPLZ Description Propagation Delay DI to YI Output Enable Time OEI to YI Output Disable Time OEI to YI Conditions(1) CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 5pF(3) RL = 500 CL = 50pF RL = 500 (2) Min. IDT54/74FCT827B Mil. (2) Max. Min. Com'l. (2) Max. Min. IDT54/74FCT827C Mil. (2) Max. Min. Com'l. (2) Max. Min. Mil. (2) Max. Min. Max. Unit ns 1.5 8 1.5 9 1.5 5 1.5 6.5 1.5 4.4 1.5 5 1.5 15 1.5 17 1.5 13 1.5 14 1.5 10 1.5 11 1.5 12 1.5 13 1.5 8 1.5 9 1.5 7 1.5 8 1.5 23 1.5 25 1.5 15 1.5 16 1.5 14 1.5 15 1.5 9 1.5 9 1.5 6 1.5 7 1.5 5.7 1.5 6.7 1.5 10 1.5 10 1.5 7 1.5 8 1.5 6 1.5 7 NOTES: 1. See test circuit and waveforms. 2. Minimum limits are guaranteed but not tested on Propagation Delays. 3. These parameters are guaranteed but not tested. 5 ns ns IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES TEST CIRCUITS AND WAVEFORMS SWITCH POSITION TEST CIRCUITS FOR ALL OUTPUTS V CC Test 7.0V Switch Open Drain 500 Disable Low V OUT V IN Pulse Generator D.U.T. All Other Tests 50pF R Closed Enable Low T C Open 8-link 500 DEFINITIONS: CL = Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator. L O ctal lin k PULSE WIDTH SET-UP, HOLD, AND RELEASE TIMES 3V 1.5V 0V 3V 1.5V 0V DATA INPUT tH t SU TIM ING INPUT ASYNCHRONOUS C ONTROL PRES ET CLEAR ETC. SYNCHRO NOUS CONTRO L PRES ET CLEAR CLOCK ENABLE ETC. t REM t SU LO W -HIGH-LOW PULSE 1.5V tW 3V 1.5V 0V HIGH-LOW -HIGH PULSE 1.5V 3V 1.5V 0V tH O ctal lin k O ctal lin k PROPAGATION DELAY ENABLE AND DISABLE TIMES ENAB LE SAM E PHASE INPUT TRANSITION t PLH t PH L OUTPUT t PLH OPPOSITE P HASE INPUT TRANSITION t PH L 3V 1.5V 0V DISA BLE 3V CO NTROL INPUT 1.5V t PZL V OH 1.5V V OL OUTPUT NO RM A LLY LO W 3V 1.5V 0V SW ITCH CLOSE D O ctal lin k SW ITCH OPEN 3.5V 3.5V 1.5V 0.3V t PZH OUTPUT NO RM A LLY HIGH 0V t PLZ V OL t PHZ 0.3V V OH 1.5V 0V 0V O ctal lin k NOTES: 1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH. 2. Pulse Generator for All Pulses: Rate 1.0MHz; Zo 50; tF 2.5ns; tR 2.5ns. 6 IDT54/74FCT827A/B/C HIGH PERFORMANCE CMOS BUFFER MILITARY AND COMMERCIAL TEMPERATURE RANGES ORDERING INFORMATION IDT XX Temp. Range FCT XXXX XX X Device Type Package Process Blank B Com mercial MIL-STD-883, Class B SO Com mercial Options Small Outline IC (SO24-2) D E L Military Options CERDIP (D24-1) CERPACK (E24-1) Leadless Chip Carrier (L28-2) 827A 827B 827C High Performance CM OS Buffer, 10-Bit 54 74 - 55C to +125C 0C to +70C CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com* *To search for sales office near you, please click the sales button found on our home page or dial the 800# above and press 2. The IDT logo is a registered trademark of Integrated Device Technology, Inc. 7