StrongIRFET IRF7946PbF DirectFET(R) Power MOSFET Applications l l l l l l l l l Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS RDS(on) typ. max. ID (Silicon Limited) 40V 1.1m 1.4m 198A ID (Package Limited) 90A G Benefits l l D S Base part number Package Type IRF7946TRPbF DirectFET MX Standard Pack Form Quantity Tape and Reel 4800 6.0 Complete Part Number IRF7946TRPbF 200 ID = 90A Limited By Package 4.0 T J = 125C 2.0 150 100 50 T J = 25C 0.0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 DirectFET ISOMETRIC MX ID, Drain Current (A) l S D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability RoHS Compliant Containing no Lead, no Bromide and no Halogen RDS(on), Drain-to -Source On Resistance (m ) l c www.irf.com (c) 2014 International Rectifier 0 25 50 75 100 125 150 T C , Case Temperature (C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback May 30, 2014 IRF7946PbF Absolute Maximum Ratings Symbol Parameter Max. c c ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 198 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 125 d Pulsed Drain Current Maximum Power Dissipation VGS TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range 96 W Linear Derating Factor 0.77 Gate-to-Source Voltage 20 W/C V Avalanche Characteristics e EAS (Thermally limited) Single Pulse Avalanche Energy EAS (tested) IAR Single Pulse Avalanche Energy Tested Value Avalanche Current EAR Repetitive Avalanche Energy d Thermal Resistance Symbol l d RJA RJC RJA-PCB C 85 163 mJ See Fig. 14, 15, 22a, 22b A mJ Parameter n Junction-to-Ambient p Junction-to-Ambient o Junction-to-Case qk Junction-to-Ambient RJA A 793 IDM PD @TC = 25C RJA Units Junction-to-PCB Mounted Typ. Max. --- 55 12.5 --- 20 --- --- 1.3 1.0 --- Units C/W Static @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS V(BR)DSS/TJ RDS(on) Symbol Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 40 --- --- VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance 2.2 --- --- --- --- --- --- 0.03 1.1 1.7 3.0 --- --- --- --- 0.67 --- --- 1.4 --- 3.9 1.0 150 100 -100 --- RG Parameter Notes: Mounted on minimum footprint full size board with metalized V V/C m m V A nA Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 90A VGS = 6.0V, ID = 72A VDS = VGS, ID = 150A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V g g d TC measured with thermocouple mounted to top (Drain) of part. back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink. Mounted on minimum Surface mounted on 1 in. square Cu (still air). 2 Mounted to a PCB with small clip heatsink (still air) www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback footprint full size board with metalized back and with small clip heatsink (still air) May 30, 2014 IRF7946PbF Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) Min. Typ. 91 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 141 36 44 97 20 49 54 41 6852 1046 735 1307 1465 Max. Units Min. Typ. Max. Units --- --- 96 --- --- 793 --- --- --- --- --- --- --- 0.75 1.6 49 50 74 73 2.6 1.2 --- --- --- --- --- --- --- 212 --- --- --- --- --- --- --- --- --- --- --- --- S nC Conditions VDS = 10V, ID = 90A ID = 90A VDS =20V VGS = 10V ID = 90A, VDS =0V, VGS = 10V VDD = 20V ID = 30A R G = 2.7 VGS = 10V VGS = 0V VDS = 25V = 1.0 MHz VGS = 0V, VDS = 0V to 32V VGS = 0V, VDS = 0V to 32V g ns pF g i h Diode Characteristics Symbol IS Parameter VSD dv/dt trr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ISM d f Notes: Calculated continuous current based on maximum allowable junction temperature. Package limit is 90A. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.021mH RG = 50, IAS = 90A, VGS =10V. ISD 90A, di/dt 1135A/s, VDD V(BR)DSS, TJ 150C. c Conditions A MOSFET symbol showing the G A integral reverse p-n junction diode. V TJ = 25C, IS = 90A, VGS = 0V V/ns TJ = 175C, IS = 90A, VDS = 40V ns TJ = 25C VR = 34V, TJ = 125C IF = 90A di/dt = 100A/s nC TJ = 25C TJ = 125C A TJ = 25C D S g g Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. This value determined from sample failure population, starting T J = 25C, L= 0.021mH, RG = 50, IAS = 90A, VGS =10V. 3 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 30, 2014 IRF7946PbF 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V BOTTOM 100 4.5V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 10 1 0.1 1 10 100 0.1 Fig 3. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 4. Typical Output Characteristics 1000 100 TJ = 150C T J = 25C 10 VDS = 10V 60s PULSE WIDTH 1.0 ID = 90A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 8 -60 -40 -20 0 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd 10000 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Ciss Coss Crss 1000 100 ID= 90A 12.0 VDS= 32V VDS= 20V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) www.irf.com (c) 2014 International Rectifier 20 40 60 80 100 120 140 160 180 QG, Total Gate Charge (nC) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback May 30, 2014 IRF7946PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150C 100 T J = 25C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 Limited by Package 10 DC Tc = 25C Tj = 150C Single Pulse 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 1.4 48 Id = 1.0mA 47 VDS= 0V to 32V 1.2 46 1.0 45 Energy (J) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 10msec 1 VGS = 0V 1.0 100sec 1msec 100 44 43 0.8 0.6 0.4 42 0.2 41 0.0 40 -60 -40 -20 0 0 20 40 60 80 100 120 140 160 T J , Temperature ( C ) 10 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m) 5 Fig 12. Typical COSS Stored Energy 10.0 8.0 VGS = 5.5V VGS = 6.0V 6.0 VGS =10V VGS = 7.0V VGS = 8.0V 4.0 2.0 0.0 0 200 400 600 800 1000 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 30, 2014 IRF7946PbF Thermal Response ( Z thJC ) C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125C and Tstart =25C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 125C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 90 80 EAR , Avalanche Energy (mJ) Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 90A 70 60 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 30, 2014 IRF7946PbF 16 IF = 54A V R = 34V 14 3.5 TJ = 25C TJ = 125C 12 3.0 2.5 IRRM (A) VGS(th) , Gate threshold Voltage (V) 4.0 ID = 150A ID = 1.0mA 2.0 ID = 1.0A 10 8 6 4 1.5 2 0 1.0 -75 -50 -25 0 25 50 0 75 100 125 150 200 600 800 1000 Fig. 18 - Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 16 350 IF = 90A V R = 34V 14 TJ = 25C TJ = 125C 12 10 QRR (nC) IRRM (A) 400 diF /dt (A/s) T J , Temperature ( C ) 8 6 300 IF = 54A V R = 34V 250 TJ = 25C TJ = 125C 200 150 4 100 2 0 50 0 200 400 600 800 1000 0 200 diF /dt (A/s) 400 600 800 1000 diF /dt (A/s) Fig. 20 - Typical Stored Charge vs. dif/dt Fig. 19 - Typical Recovery Current vs. dif/dt 400 IF = 90A V R = 34V 350 TJ = 25C TJ = 125C QRR (nC) 300 250 200 150 100 50 0 200 400 600 800 1000 diF /dt (A/s) Fig. 21 - Typical Stored Charge vs. dif/dt 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 30, 2014 IRF7946PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG 20V VGS + V - DD IAS A 0.01 tp I AS Fig 22a. Unclamped Inductive Test Circuit RD VDS Fig 22b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 23a. Switching Time Test Circuit tr t d(off) Fig 23b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V tf .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 24a. Gate Charge Test Circuit 8 www.irf.com (c) 2014 International Rectifier Qgs1 Qgs2 Qgd Qgodr Fig 24b. Gate Charge Waveform Submit Datasheet Feedback May 30, 2014 IRF7946PbF DirectFET(R) Board Footprint, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G=GATE D=DRAIN S=SOURCE D D S G S D D Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 30, 2014 IRF7946PbF DirectFET(R) Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE MIN MAX 6.25 6.35 A 4.80 5.05 B 3.85 3.95 C 0.35 0.45 D 0.68 0.72 E 0.68 0.72 F G 1.38 1.42 H 0.80 0.84 0.38 0.42 J 0.88 1.02 K 2.28 2.42 L M 0.59 0.70 R 0.03 0.08 0.08 0.17 P IMPERIAL MAX MIN 0.246 0.250 0.189 0.199 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.054 0.056 0.031 0.033 0.015 0.017 0.035 0.040 0.090 0.095 0.023 0.028 0.001 0.003 0.003 0.007 Dimensions are shown in millimeters (inches) DirectFET(R) Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 30, 2014 IRF7946PbF DirectFET(R) Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel. quantity is 4800 parts. (ordered as IRF7946PBF). REEL DIMENSIONS STANDARD OPTION(QTY 4800) METRIC IMPERIAL MIN CODE MAX MAX MIN 12.992 A N.C 330.0 N.C 0.795 B N.C 20.2 N.C 0.504 C 0.520 12.8 13.2 0.059 D 1.5 N.C N.C 3.937 E 100.0 N.C N.C N.C F 0.724 N.C 18.4 G 0.488 0.567 12.4 14.4 H 0.469 0.606 11.9 15.4 NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 0.319 8.10 7.90 0.154 0.161 3.90 4.10 11.90 12.30 0.469 0.484 0.215 0.219 5.55 5.45 0.201 0.209 5.10 5.30 0.256 0.264 6.70 6.50 0.059 1.50 N.C N.C 0.059 0.063 1.50 1.60 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 30, 2014 IRF7946PbF Qualification information Consumer Qualification level (per JEDEC JESD47F Moisture Sensitivity Level guidelines) MS L1 DFET 1.5 (per JE DE C J-S TD-020D ) Yes RoHS compliant Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Revision History Date 5/7/2014 5/30/2014 Comment * Updated data sheet based on corporate template. * Updated Qual level from "MSL3" to "MSL1" on page12. * Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264). * Remove IRF7946TR1PBF quantity= 1000 from ordering table on page1. * Remove continuous drain current package limt=90A from Absolute Maximum table-on page2 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback May 30, 2014