KST-9019-000 1
STS9018
NPN Silicon Transistor
Description
• High frequency low noise amplifier application
• VHF band amplifier application
Features
• Low noise figure : NF = 4dB(Max.) at f=100MHz
• High tr ansition frequency fT = 800MHz(Typ.)
Ordering Information
Type NO. Marking Package Code
STS9018 STS9018 TO-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Emitter
2. Bas e
3. Collector
14.0±0.40
KST-9019-000 2
Absolute maximum ratings Ta=25°
°°
°C
Characteristic Symbol Ratings Unit
Collec tor - Base voltage VCBO 40 V
Collector - Emitter voltage VCEO 30 V
Emitter- Base voltage VEBO 4V
Collec tor c urrent IC20 mA
Emitter current IE-20 mA
Collec tor dis sipation PC625 mW
Junction temperature Tj150 °C
Storage temperature ran ge Tstg -55~150 °C
Electrical Characteristics Ta=25°
°°
°C
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector cut-off current ICBO VCB=40V, IE=0 - - 0.1 µA
Emitter c ut-off c urrent IEBO VEB=4V, IC=0 - - 0.1 µA
DC current gain hFE*VCE=5V, IC=1mA 54 - 198 -
Tran sistor frequency fTVCE=10V, IE=-8mA 500 800 - MHz
Noise figure NF - - 4
Power gain GPE V
CB
=6V,I
E
=-1mA, f=100MHz 15 - - dB
* : hFE rank / F : 54~80, G : 70~108, H : 97~146, I : 132~198.
STS9018
KST-9019-000 3
STS9018
Electrical Characteristic Curves
Fig. 4 fT-IE
Fig. 2 IC-VCE
Fig. 3 hFE-IC
Fig. 5 Cob-VCB, Cib-VEB Fig. 6 Yie-IC
Fig. 1 PC –Ta
KST-9019-000 4
Electrical Characteristic Curves
Fig. 9 IC - Yre
STS9018
Fig. 8 IC-Yfe
Fig. 7 IC-Yoe
