APT40GF120JRD APT40GF120JRD 1200V Fast IGBT E E * Low Tail Current * Ultra Low Leakage Current * Low Forward Voltage Drop * RBSOA and SCSOA Rated 27 2 T- C G The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. 60A SO "UL Recognized" ISOTOP (R) * High Freq. Switching to 20KHz C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT40GF120JRD VCES Collector-Emitter Voltage 1200 VCGR Collector-Gate Voltage (RGE = 20K) 1200 VGE Gate-Emitter Voltage 20 IC1 Continuous Collector Current @ TC = 25C 60 IC2 Continuous Collector Current @ TC = 60C 40 1 ICM Pulsed Collector Current ILM RBSOA Clamped Inductive Load Current @ Rg = 11 TC = 90C 100 PD Total Power Dissipation 390 TJ,TSTG TL @ TC = 25C UNIT Volts Amps 150 Watts -55 to 150 Operating and Storage Junction Temperature Range C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN TYP MAX VGE(TH) Gate Threshold Voltage 4.5 5.5 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) 2.9 3.4 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) 3.5 4.1 VCE(ON) ICES I GES (VCE = VGE, I C = 700A, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) 0.5 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) 5.0 Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts mA nA 052-6256 Rev B 7-2002 Symbol APT40GF120JRD DYNAMIC CHARACTERISTICS Symbol Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller") Charge tr td(off) tf td(on) tr td(off) tf MAX Turn-on Delay Time MIN 3450 4200 330 470 f = 1 MHz 230 350 Gate Charge VGE = 15V 325 490 35 40 I C = I C2 195 300 Resistive Switching (25C) 47 94 VGE = 15V 178 360 320 480 190 380 45 90 102 210 440 880 102 210 Capacitance VGE = 0V VCE = 25V 3 Qg td(on) TYP Test Conditions VCC = 0.5VCES Rise Time VCC = 0.5VCES Turn-off Delay Time I C = I C2 Fall Time RG = 10 Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V Fall Time I C = I C2 Eon Turn-on Switching Energy R G = 10 6.4 13 Eoff Turn-off Switching Energy TJ = +150C 5.6 12 Ets Total Switching Losses 12.0 25 46 100 115 230 390 790 td(on) tr td(off) tf Turn-on Delay Time Rise Time Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES Turn-off Delay Time VGE = 15V I C = I C2 Fall Time R G = 10 100 210 Ets Total Switching Losses TJ = +25C 10.8 22 gfe Forward Transconductance VCE = 20V, I C = I C2 8 UNIT pF nC ns ns mJ ns mJ S THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJA 052-6256 Rev B 7-2002 WT Torque Characteristic MIN TYP MAX Junction to Case (IGBT) 0.32 Junction to Case (FRED) 0.66 C/W 40 Junction to Ambient Package Weight UNIT 1.03 oz 29.2 gm 10 lb*in 1.1 N*m Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 IC = IC2, RGE = 25, L = 68H, Tj = 25C 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 11V 60 40 10V 20 9V 8V IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) VGE=17, 15 & 13V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25C) 11V 60 10V 40 9V 20 8V 7V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150C) 120 250sec. Pulse Test VGE = 15V T C=-55C 60 TC=+25C TC=+150C 40 20 IC, COLLECTOR CURRENT (AMPERES) 80 IC, COLLECTOR CURRENT (AMPERES) VGE=17, 15 & 13V 0 0 0 10,000 f = 1MHz 5,000 C ies 1,000 C oes 500 C res 100 .01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage OPERATION LIMITED BY VCE (SAT) 100s 10 1ms TC =+25C TJ =+150C SINGLE PULSE 1 10ms 1 10 100 1200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V C, CAPACITANCE (pF) APT40GF120JRD 80 80 20 IC = IC2 TJ = +25C 16 VCE =240V 12 VCE =600V 8 4 0 0 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage D=0.5 0.1 0.05 0.2 0.1 0.05 Note: 0.02 0.01 0.005 SINGLE PULSE 0.001 10-5 10-4 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 052-6256 Rev B 7-2002 0.01 PDM ZJC, THERMAL IMPEDANCE (C/W) .32 APT40GF120JRD 80 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 5.0 4.0 IC1 I C2 2.0 0.5 IC2 1.5 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 10, Breakdown Voltage vs Junction Temperature 25 40 VCC = 0.66 VCES VGE = +15V TJ = +25C IC = IC2 30 E off 20 E on 10 0 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 0 8 SWITCHING ENERGY LOSSES (mJ) 50 TOTAL SWITCHING ENERGY LOSSES (mJ) 20 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9, Maximum Collector Current vs Case Temperature SWITCHING ENERGY LOSSES (mJ) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 1 40 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 1.1 60 IC1 IC2 1 0.5 IC2 VCC = 0.66 VCES VGE = +15V RG = 10 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature VCC = 0.66 VCES VGE = +15V TJ = +125C RG = 10 6 4 E off 2 E on 0 0 10 20 30 40 50 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current IC, COLLECTOR CURRENT (AMPERES) 052-6256 Rev B 7-2002 50 For Both: Duty Cycle = 50% TJ = +125C Tsink = +90C Gate drive as specified Power dissapation = 110W ILOAD = IRMS of fundamental 10 1 .1 0.1 1.0 10 F, FREQUENCY (kHz) Figure 14,Typical Load Current vs Frequency 100 1000 APT40GF120JRD VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Et s = E on + E off A A 90% VC B 10% B t d (on) t d(off) IC VC IC 100uH 90% D.U.T. VCE (SAT) tr VC A D.U.T. DRIVER* 10% IC RG V CLAMP 90% 10% tf E on E off t=2us Figure 15, Switching Loss Test Circuit and Waveforms 2 VCE(off) VGE(on) V CC 90% .5 VCES RL = I C2 2 D.U.T. 10% 1 From Gate Drive Circuitry VCE(on) VGE(off) t d (on) tr t d(off) RG 1 tf Figure 16, Resistive Switching Time Test Circuit and Waveforms MAXIMUM RATINGS (FRED) Symbol All Ratings: TC = 25C unless otherwise specified. APT40GF120JRD Characteristic IFAV Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) 60 IFRMS RMS Forward Current 115 Non-Repetive Forward Surge Current (TJ = 45C, 8.3 ms) 540 IFSM UNIT Amps STATIC ELECTRICAL CHARACTERISTICS (FRED) Characteristic / Test Conditions MIN TYP Maximum Forward Voltage IF = 120A IF = 60A, TJ = 150C UNIT 2.5 IF = 60A VF MAX 2.7 Volts 2.0 052-6256 Rev B 7-2002 Symbol APT40GF120JRD DYNAMIC CHARACTERISTICS (FRED) Symbol Characteristic MIN TYP MAX 70 85 trr1 Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C trr2 Reverse Recovery Time TJ = 25C 70 trr3 IF = 60A, diF /dt = -480A/s, VR = 650V TJ = 100C 130 tfr1 Forward Recovery Time TJ = 25C 170 tfr2 IF = 60A, diF /dt = 480A/s, VR = 650V TJ = 100C 170 IRRM1 Reverse Recovery Current TJ = 25C 18 30 IRRM2 IF = 60A, diF /dt = -480A/s, VR = 650V TJ = 100C 29 40 Qrr1 Recovery Charge TJ = 25C 630 Qrr2 IF = 60A, diF /dt = -480A/s, VR = 650V TJ = 100C 1820 Vfr1 Forward Recovery Voltage TJ = 25C 12 Vfr2 IF = 60A, diF /dt = 480A/s, VR = 650V TJ = 100C 12 Rate of Fall of Recovery Current TJ = 25C 900 IF = 60A, diF /dt = -480A/s, VR =650V TJ = 100C 600 dIM/dt UNIT ns Amps nC Volts A/s Vr D.U.T. trr/Qrr Waveform 30H PEARSON 411 CURRENT TRANSFORMER +15v diF /dt Adjust 0v -15v Figure 17, Diode Reverse Recovery Test Circuit and Waveforms 1 IF - Forward Conduction Current 2 diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. 3 IRRM - Peak Reverse Recovery Current. 4 trr - Reverse Recovery Time Measured from Point of IF Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 1 4 6 052-6256 Rev B 7-2002 Zero 5 3 0.5 IRRM 0.75 IRRM 2 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Figure 18, Diode Reverse Recovery Waveform and Definitions Qrr = 1/2 (trr . IRRM) APT40GF120JRD 200 TJ = 25C 120 TJ = 150C TJ = 100C TJ = -55C 80 40 0 TJ = 100C VR = 650V 4000 120A 3000 60A 2000 1000 30A 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 3, Reverse Recovery Charge vs Current Slew Rate 2.0 TJ = 100C VR = 650V 120A 45 60A 30A 30 15 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 4, Reverse Recovery Current vs Current Slew Rate 1.6 Qrr 0.8 1500 tfr, FORWARD RECOVERY TIME (nano-SECONDS) trr, REVERSE RECOVERY TIME (nano-SECONDS) 60A 30A 180 120 60 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 6, Reverse Recovery Time vs Current Slew Rate Qrr -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5, Dynamic Parameters vs Junction Temperature TJ = 100C VR = 650V 120A I RRM t rr 0.4 0.0 300 240 t rr 1.2 1250 -50 30 TJ = 100C VR = 650V I F = 60A 1000 25 20 Vfr 750 15 500 10 250 t fr 5 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) IRRM, REVERSE RECOVERY CURRENT (AMPERES) 0 1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 2, Forward Voltage Drop vs Forward Current 60 Kf, DYNAMIC PARAMETERS (NORMALIZED) IF, FORWARD CURRENT (AMPERES) 160 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 5000 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate 0 1000 500 100 50 0.01 0.05 0.1 0.5 1 5 10 VR, REVERSE VOLTAGE (VOLTS) Figure 8, Junction Capacitance vs Reverse Voltage 50 100 200 052-6256 Rev B 7-2002 CJ, JUNCTION CAPACITANCE (pico-FARADS) 2000 APT40GF120JRD SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) r = 4.0 (.157) (2 places) 052-6256 Rev B 7-2002 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter/Anode 30.1 (1.185) 30.3 (1.193) Collector/Cathode * Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Gate Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058