1N4148WT 1N4148WT Surface Mount Small Signal Diodes Kleinsignal-Dioden fur die Oberflachenmontage Version 2012-05-03 0.05 0.7 0.13 1.2 Power dissipation - Verlustleistung 150 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 75 V Plastic case - Kunststoffgehause ~ SOD-523 0.05 1.5 0.35 0.8 Weight approx. - Gewicht ca. Dimensions - Mae [mm] 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 1N4148WT Power dissipation - Verlustleistung Ptot 150 mW 1) Max. average forward current - Dauergrenzstrom (dc) IFAV 125 mA 1) Repetitive peak forward current - Periodischer Spitzenstrom IFRM 250 mA 1) IFSM IFSM 2 A 1) 1A Repetitive peak reverse voltage - Periodische Spitzensperrspannung VRRM 75 V Non repetitive peak reverse voltage - Stospitzensperrspannung VRSM 100 V 2) Tj TS -65...+150C -65...+150C Non repetitive peak forward surge current Stostrom-Grenzwert tp 1 s tp 100ms Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Forward voltage Durchlass-Spannung IF IF IF IF = = = = Leakage current - Sperrstrom VR = 20 V VR = 75 V IR IR < 25 nA < 1 A Leakage current - Sperrstrom, Tj = 125C VR = 25 V VR = 75 V IR IR < 30 A < 50 A Max. junction capacitance - Max. Sperrschichtkapazitat VR = 0 V, f = 1 MHz CT 2 pF Reverse recovery time - Sperrverzug IF = 10 mA uber/through IR = 10 mA bis/to IR = 1 mA trr < 4 ns Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft 1 2 1 mA 10 mA 50 mA 150 mA VF RthA < 0.715 V < 0.855 V < 1.000 V <1.250V < 833 K/W 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 1N4148WT 1 120 [%] [A] 100 10-1 80 Tj = 125C -2 10 60 40 Tj = 25C -3 10 20 IF Ptot 0 -4 0 TA 50 100 150 [C] 10 1 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp.1) 2 http://www.diotec.com/ 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) (c) Diotec Semiconductor AG