G5SBA20, G5SBA60 & G5SBA80
Vishay General Semiconductor
Document Number: 88608
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, switching mode
power supply, adapter, audio equipment, and home
appliances applications.
MECHANICAL DATA
Case: GBU
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes the cathode end
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
PRIMARY CHARACTERISTICS
IF(AV) 6.0 A
VRRM 200 V, 600 V, 800 V
IFSM 150 A
IR 5 µA
VF1.05 V
TJ max. 150 °C
Case Style GBU
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL G5SBA20 G5SBA60 G5SBA80 UNIT
Maximum repetive peak reverse voltage VRRM 200 600 800 V
Maximum RMS reverse voltage VRWM 140 420 560 V
Maximum DC blocking voltage VDC 200 600 800 V
Maximum average forward rectified
output current at
TC = 100 °C (1)
TA = 25 °C (2) IF(AV)
6.0
2.8 A
Peak forward surge current single sine-wave
superimposed on rated load IFSM 150 A
Rating for fusing (t < 8.3 ms) I2t93A
2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
G5SBA20, G5SBA60 & G5SBA80
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88608
Revision: 15-Dec-08
2
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL G5SBA20 G5SBA60 G5SBA80 UNIT
Maximum instantaneous forward voltage per diode 3.0 A VF1.05 V
Maximum DC reverse current at rated DC blocking
voltage per diode
TJ = 25 °C
TJ = 125 °C IR
5.0
300 µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL G5SBA20 G5SBA60 G5SBA80 UNIT
Typical thermal resistance RθJA (2)
RθJC (1)
22
3.4 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
G5SBA60-E3/45 3.565 45 20 Tube
G5SBA60-E3/51 3.565 51 250 Paper tray
Figure 1. Derating Curve Output Rectified Current
050 100 150
0
2.0
4.0
6.0
8.0
Average Forward Output Current (A)
Temperature (°C)
Heatsink Mounting, T
C
P.C.B. Mounting, T
A
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
50
100
150
TJ = TJ Max.
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
G5SBA20, G5SBA60 & G5SBA80
Vishay General Semiconductor
Document Number: 88608
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4 0.6 0.81.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TJ = 125 °C
TJ = 25 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance
0.1 110 100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01 0.1 110 100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Type GBU
Polarity shown on front side of case, positive lead by beveled corner
0.125 (3.2) x 45°
Chamfer
0.085 (2.16)
0.065 (1.65)
0.020 R (TYP.)
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.075
(1.9) R
.
0.080(2.03)
0.060 (1.52)
0.050 (1.27)
0.040 (1.02)
0.080 (2.03)
0.065 (1.65) 0.210 (5.33)
0.190 (4.83)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.085 (2.16)
0.075 (1.90)
0.026 (0.66)
0.020 (0.51)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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