IRFP254A
BVDSS = 250 V
RDS(on) = 0.14Ω
ID = 25 A
250
25
15.9
100
±30
781
25
22.1
4.8
221
1.79
- 55 to +150
300
0.56
--
40
--
0.24
--
♦ Avalanche Rugged Technol ogy
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V
♦ Low RDS(ON): 0. 1 08Ω (Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
RθJC
RθCS
RθJA
°C/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
Absolute Maximum Ratings
Drain- to-Source Vol tage
Conti nuous Drain Current (TC=25°C)
Conti nuous Drain Current (TC=100°C)
Drain Current-Pulsed (1)
Gate-t o-Source Volta ge
Singl e Pulsed Aval anche Energy (2)
Avalanche Current (1)
Repetitive Aval anche Energy (1)
Peak Diode Recovery dv/dt (2)
Total Power Dissipati on (TC=25°C)
Linear Derating Fact or
Operating Junction and
Storage Temperature Range
Maxim um Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic Value UnitsSymbol
IDM
VGS
EAS
IAR
EAR
dv/dt
ID
PD
TJ , TSTG
TL
A
V
mJ
A
mJ
V/ns
W
W/°C
A
°C
VDSS V
TO-3P
1.Gate 2. Drain 3. Source
3
2
1
©1 999 Fa irchild Semic ond ucto r Corporation
Rev. B
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specifi ed)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forwar d
Gate-Source Leakage , Revers e
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
Static Drai n-Source
On-State Resistance
Forward Transcond uctance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
BVDSS
∆BV/∆TJ
VGS(th)
RDS(on)
IGSS
IDSS
V
V/°C
V
nA
µA
Ω
Ω
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
VGS=0V,ID=250µA
ID=250µA
See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=250V
VDS=200V,TC=125°C
VGS=10V,ID=12. 5A (4)
VDS=40V,ID=12.5A (4)
VDD=125V,ID=25A,
RG=5.3Ω
See Fig 13
(4) (5)
VDS=200V,VGS=10V,
ID=25A
See Fig 6 & Fig 12
(4) (5)
Drain- to-Sou rce Leakage Current
VGS=0V,VDS=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Sou rce Current (1)
Diode Forwar d Volta ge (4)
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
--
--
--
--
--
A
V
ns
µC
Integral rev erse pn-diode
in the MOSFET
TJ=25°C,IS=25A,VGS=0V
TJ=25°C,IF=25A
diF/dt=100A/µs (4)
IRFP254A
250
--
2.0
--
--
--
--
--
0.27
--
--
--
--
--
345
155
21
20
86
40
88
16
35.6
--
--
4.0
100
-100
10
100
0.14
--
3000
400
180
60
60
190
100
114
--
--
17.45
2300
--
--
--
255
2.3
25
100
1.5
--
--
Notes;
(1) Repetitive Rating: Pulse Widt h Limited by Max imum Juncti on Temper ature
(2) L=2mH, IAS=25A, VDD=50V, RG=27Ω, Starti ng TJ =25°C
(3) ISD ≤ 25A, di/dt ≤ 300A/µs, VDD ≤ BVDSS , Sta rti ng TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essential ly Independent of O perating T emperature
©1 999 Fa irchild Semic ond ucto r Corporation
Rev. B
IRFP254A
10-1 100101
100
101
102
@ Notes :
1. 250
µs Pulse Test
2. TC = 25 oC
VGS
Top : 1 5 V
1 0 V
8 .0 V
7.0 V
6 .0 V
5.5 V
5.0 V
Bottom : 4.5 V
ID
, Drain Current [A]
V
DS , Drain-Source Voltage [V] 246810
10-1
100
101
102
25
oC
150 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
3. 250 µs Pulse Test
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
020406080100
0.00
0.05
0.10
0.15
0.20
0.25
@ Note : TJ = 25 oC
V
GS = 20 V
V
GS = 10 V
RDS(on) , [ Ω]
Drain-Source On-Resistance
I
D
, Drain Current [A] 0.20.40.60.81.01.21.41.61.8
10-1
100
101
102
150 oC25
oC
@ Notes :
1. VGS = 0 V
2. 250
µ
s Pulse Test
IDR , Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
100101
0
1000
2000
3000
4000C
iss= Cgs+ Cgd ( C
ds= shorted
)
C
oss= Cds+ Cgd
C
rss= Cgd
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
C rss
C oss
C iss
Capacitance [pF]
VDS , Drain-Source Voltage [V] 0 20406080100
0
5
10
V
DS = 200 V
V
DS = 125 V
V
DS = 50 V
@ Notes : ID = 25.0 A
VGS , Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drai n Current
IRFP254A
-75 -50 -25 0 25 50 75 100 125 150 175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
TJ
, Junction Temperature [o
C] -75-50-25 0 25 50 75 100125150175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. VGS = 10 V
2. ID = 12.5 A
RDS(on) , (Normalized)
Drain-Source On-Resistance
TJ
, Junction Temperature [o
C]
100101102
10-1
100
101
10210 µs
DC
100
µs
1 ms
10 ms
@ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
Operation in This Area
is Limited by R DS(on)
ID , Drain Current [A]
VDS , Drain-Source Voltage [V] 25 50 75 100125150
0
5
10
15
20
25
30
ID , Drain Current [A]
T
c
, Case Temperature [o
C]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. ZθJC(t)=0.56 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM*ZθJC(t)
ZθJC
(t) , Thermal Response
t1 , Square Wave Pulse Durat ion [sec]
1&+$11(/
32:(5 026)(7
Fig 7. Br eakdown Volt age vs. Te mperature Fig 8. O n-Resistance vs. Temperature
Fig 11. Thermal Re sponse
Fig 10. Ma x. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area
PDM
t1t2
IRFP254A
1&+$11(/
32:(5 026)(7
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Ci rcu it & Waveforms
Fig 14. Unclamped Inductive Switching Test Ci rcuit & Waveforms
EAS =L
L IAS2
----
2
1--------------------
BVDSS -- VDD
BVDSS
Vin
Vout
10%
90%
td(on) tr
t on t off
td(off) tf
Charge
VGS
10V
Qg
Qgs Qgd
Vary t
p
to obtain
required peak ID
10V
VDD
C
LL
VDS
ID
RG
t p
DUT
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
VDD
( 0.5 rated VDS )
10V
Vout
Vin
RL
DUT
RG
3mA
VGS
Current Sa mpling (IG)
Resistor Current Sa mpling (ID)
Resistor
DUT
VDS
300nF
50kΩ
200nF
12V
Same Type
as DUT
Current Regulator
R1R2
IRFP254A
1&+$11(/
32:(5 026)(7
Fig 15. Peak Diode Recove ry dv/ dt Test Circui t & Waveform s
DUT
VDS
+
--
L
I S
Driver
VGS
RGSame Type
as DUT
VGS dv/dt contr olled by RG
IS control led by Duty Fa ctor D
VDD
10V
VGS
( Driver )
I S
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Vf
IFM , Bo dy D iode Forw ard Current
Body Diode Reverse Current
IRM
Body Diode R ecovery dv/dt
di/dt
D = Gate P ul se Width
Gate Pulse Period
--------------------------
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.