$GYDQFHG 3RZHU 026)(7 IRFP254A FEATURES BVDSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS(on) = 0.14 Lower Input Capacitance Improved Gate Charge ID = 25 A Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V TO-3P Low RDS(ON): 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Drain-to-Source Voltage Value Units 250 V Continuous Drain Current (TC=25C) 25 Continuous Drain Current (TC=100C) 15.9 A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (2) 781 mJ A (1) A 100 IAR Avalanche Current (1) 25 EAR Repetitive Avalanche Energy (1) 22.1 mJ dv/dt Peak Diode Recovery dv/dt (2) 4.8 V/ns Total Power Dissipation (TC=25C) 221 W Linear Derating Factor 1.79 W/C PD TJ , TSTG TL Operating Junction and - 55 to +150 Storage Temperature Range C Maximum Lead Temp. for Soldering 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RJC Junction-to-Case -- 0.56 RCS Case-to-Sink 0.24 -- RJA Junction-to-Ambient -- 40 Units C/W Rev. B (c)1999 Fairchild Semiconductor Corporation 1&+$11(/ 32:(5 026)(7 IRFP254A Electrical Characteristics (TC=25C unless otherwise specified) Characteristic Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage 250 -- -- BV/TJ Breakdown Voltage Temp. Coeff. -- 0.27 -- VGS(th) IGSS IDSS RDS(on) Gate Threshold Voltage 2.0 -- 4.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- -- 100 -- -- 0.14 -- gfs Forward Transconductance -- 17.45 Ciss Input Capacitance -- 2300 3000 Coss Output Capacitance -- 345 400 Crss Reverse Transfer Capacitance -- 155 180 td(on) Turn-On Delay Time -- 21 60 Rise Time -- 20 60 Turn-Off Delay Time -- 86 190 Fall Time -- 40 100 Qg Total Gate Charge -- 88 114 Qgs Gate-Source Charge -- 16 -- Qgd Gate-Drain ( Miller ) Charge -- 35.6 -- tr td(off) tf V Test Condition VGS=0V,ID=250A V/C ID=250A V nA A Symbol pF See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=250V VDS=200V,TC=125C VGS=10V,ID=12.5A (4) VDS=40V,ID=12.5A (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=125V,ID=25A, ns RG=5.3 See Fig 13 (4) (5) VDS=200V,VGS=10V, nC ID=25A See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- 25 ISM Pulsed-Source Current (1) -- -- 100 VSD Diode Forward Voltage (4) -- -- 1.5 V TJ=25C,IS=25A,VGS=0V trr Reverse Recovery Time -- 255 -- ns TJ=25C,IF=25A Qrr Reverse Recovery Charge -- 2.3 -- C diF/dt=100A/s A Integral reverse pn-diode in the MOSFET (4) Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=2mH, IAS=25A, VDD=50V, RG=27, Starting TJ =25C (3) ISD 25A, di/dt 300A/s, VDD BV DSS , Starting TJ =25C (4) Pulse Test: Pulse Width = 250s, Duty Cycle 2% (5) Essentially Independent of Operating Temperature Rev. B (c)1999 Fairchild Semiconductor Corporation 1&+$11(/ 32:(5 026)(7 IRFP254A Fig 1. Output Characteristics Fig 2. Transfer Characteristics 102 102 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 101 100 ID , Drain Current [A] ID , Drain Current [A] Top : @ Notes : 1. 250 s Pulse Test 2. TC = 25 oC 101 150 oC 100 @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 s Pulse Test 25 oC - 55 oC -1 10-1 100 10 101 2 4 Fig 3. On-Resistance vs. Drain Current 102 IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 0.25 0.20 VGS = 10 V 0.15 0.10 VGS = 20 V 0.05 @ Note : TJ = 25 oC 0.00 0 20 40 60 80 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Fig 4. Source-Drain Diode Forward Voltage 101 100 25 oC 10-1 0.2 100 @ Notes : 1. VGS = 0 V 2. 250 s Pulse Test 150 oC 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 4000 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd C iss 2000 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C oss 1000 C rss 00 10 1 10 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Capacitance [pF] 3000 VDS = 50 V 10 VDS = 125 V VDS = 200 V 5 @ Notes : ID = 25.0 A 0 0 20 40 60 QG , Total Gate Charge [nC] 80 100 1&+$11(/ 32:(5 026)(7 IRFP254A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 3.0 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -75 @ Notes : 1. VGS = 0 V 2. ID = 250 A -50 -25 0 25 50 75 100 125 150 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 2. ID = 12.5 A 0.5 0.0 -75 175 -50 -25 o 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] TJ , Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 30 ID , Drain Current [A] 102 10 s 100 s 1 ms 10 ms 101 DC 100 @ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 10-1 0 10 25 20 15 10 5 101 0 25 102 50 75 100 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response D=0.5 10- 1 @ Notes : 1. Z J C (t)=0.56 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) 0.2 0.1 0.05 Z JC(t) , ID , Drain Current [A] Operation in This Area is Limited by R DS(on) PDM 0.02 0.01 t1 single pulse t2 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 t1 , Square Wave Pulse Duration 100 [sec] 101 125 150 1&+$11(/ 32:(5 026)(7 IRFP254A Fig 12. Gate Charge Test Circuit & Waveform Current Regulator VGS Same Type as DUT 50k Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time 1&+$11(/ 32:(5 026)(7 IRFP254A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD dv/dt controlled by RG IS controlled by Duty Factor D Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.