© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 200 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ200 V
VGSM Transient ± 30 V
ID25 TC= 25°C48 A
IDM TC= 25°C, Pulse Width Limited by TJM 130 A
IATC= 25°C5 A
EAS TC= 25°C 500 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 175°C 3 V/ns
PDTC= 25°C 250 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
FCMounting Force (TO-263) 10..65/2.2..14.6 Nm/lb.in
MdMounting Torque (TO-220 & TO-3P) 1.13/10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TrenchTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXTA48N20T
IXTP48N20T
IXTQ48N20T
VDSS = 200V
ID25 = 48A
RDS(on) ≤≤
≤≤
≤ 50mΩΩ
ΩΩ
Ω
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 200 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS = 0V 5 μA
TJ = 150°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 40 50 mΩ
DS99948A(02/10)
Features
zHigh Current Handling Capability
zAvalanche Rated
zFast Intrinsic Rectifier
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
GDS
TO-220AB (IXTP)
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-3P (IXTQ)
D
G
SD (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA48N20T IXTP48N20T
IXTQ48N20T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 26 44 S
Ciss 3090 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 350 pF
Crss 40 pF
td(on) 20 ns
tr 26 ns
td(off) 46 ns
tf 28 ns
Qg(on) 60 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 nC
Qgd 13 nC
RthJC 0.50 °C/W
RthCS TO-220 0.50 °C/W
RthCS TO-3P 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 48 A
ISM Repetitive, Pulse Width Limited by TJM 192 A
VSD IF = 48A, VGS = 0V, Note 1 1.2 V
trr 130 ns
IRM 8.5 A
QRM 550 nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω(External)
IF = 0.5 • ID25, VGS = 0V
-di/dt = 100A/μs
VR = 0.5 • VDSS
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA48N20T IXTP48N20T
IXTQ48N20T
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
02468101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 150ºC
0
5
10
15
20
25
30
35
40
45
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 24A Valu e vs.
Junction Tem perature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 48A
I
D
= 24A
Fig. 5. R
DS(on)
Normalized to I
D
= 24A Valu e vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 102030405060708090100110
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. Maximu m Dr ai n C urr en t vs.
Case Temperatu r e
0
5
10
15
20
25
30
35
40
45
50
55
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA48N20T IXTP48N20T
IXTQ48N20T
Fi g . 7. I n p u t Admittance
0
10
20
30
40
50
60
70
80
90
100
3.54.04.55.05.56.06.57.0
V
GS
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
150ºC
Fig. 8. T ransconductance
0
10
20
30
40
50
60
70
0 10203040506070
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fi g . 9. F o r ward Vo l tage D r o p of I n tr i nsi c D i o de
0
20
40
60
80
100
120
140
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fi g . 10. Gate Ch ar g e
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50 55 60
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
=100V
I
D
= 24A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f = 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximum Tr an sien t Ther mal I mp edan ce
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_48N20T(4W)02-12-10-A
IXTA48N20T IXTP48N20T
IXTQ48N20T
Fi g . 14. Resisti ve Tur n-o n R ise Time
vs. Drain Current
6
10
14
18
22
26
30
34
10 15 20 25 30 35 40 45 50
ID - Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 5 , V
GS
= 15V
V
DS
= 100V
Fi g . 15. R esi sti ve Tur n -o n Swi tch i n g Ti mes
vs. Gate Resistance
10
12
14
16
18
20
22
4 6 8 101214161820
RG - Ohms
t
r
- Nanoseconds
16
17
18
19
20
21
22
t d
(
on
)
- Nanoseconds
t
r
td(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 100V
I
D
= 48A
I
D
= 24A
Fi g . 16. Res ist ive Tu rn -o f f Swi tchin g Ti mes
vs. Ju n cti o n Temp er atu r e
18
20
22
24
26
28
30
32
34
36
38
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
- Nanoseconds
42
44
46
48
50
52
54
56
58
60
62
t d
(
off
)
- Nanoseconds
t
f
td(off)
- - - -
R
G
= 5, V
GS
= 15V
V
DS
= 100V
I
D
= 24A
I
D
= 48A
Fi g . 17. R esisti ve Turn-o ff Swi tchin g Times
vs. D r ain Cu r r ent
18
20
22
24
26
28
30
32
10 15 20 25 30 35 40 45 50
ID - Amperes
t
f
- Nanoseconds
40
44
48
52
56
60
64
68
t d
(
off
)
- Nanoseconds
t
f
td(off)
- - - -
R
G
= 5, V
GS
= 15V
V
DS
= 100V
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
Fi g . 13. Re sist ive Tur n -o n R i se Ti me
vs. Junction Temperature
8
12
16
20
24
28
32
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5 , V
GS
= 15V
V
DS
= 100V
I
D
= 48A
I
D
= 24A
Fi g. 18. Resi sti ve Turn- o ff Swi t ch i ng Times
vs. Gate R esi stan ce
18
26
34
42
50
58
66
4 6 8 101214161820
RG - Ohms
t
f
- Nanoseconds
40
60
80
100
120
140
160
t d
(
off
)
- Nanoseconds
t
f
td(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 100V
I
D
= 48A
I
D
= 24A
